T221160A-30S

tm TE CH T221160A DRAM FEATURES 64K x 16 DYNAMIC RAM FAST PAGE MODE PIN ASSIGNMENT ( Top View ) V cc I /01 I/02 I/03 I/04 V cc I/05 I/06 I/07 I/08 NC NC WE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 V ss I/016 I/015 I/014 I/013 V ss I/012 I/011 I/010 I/09 NC CASL CASH OE NC A7 A6 A5 A4 VSS • High speed access time : 25/30/35/40 ns • Industry-standard x 16 pinouts and timing functions. • Single 5V (±10%) power supply. • All device pins are TTL- compatible. • 256-cycle refresh in 4ms. • Refresh modes: RAS only, CAS BEFORE RAS (CBR) and HIDDEN. • Conventional FAST PAGE MODE access cycle. • BYTE WRITE and BYTE READ access cycles. SO J 31 30 29 28 27 26 25 24 23 22 21 PART NUMBER EXAMPLES PART NUMBER R AS NC A0 A1 ACCESS TIME 30ns 30ns 35ns 35ns PACKAGE SOJ TSOP-II SOJ TSOP-II T221160A-30J T221160A-30S T221160A-35J T221160A-35S A2 A3 V cc V cc I /01 1 2 3 4 5 6 7 8 9 10 T S O P (II) 40 39 38 37 36 35 34 33 32 31 V ss I/01 6 I/01 5 I/01 4 I/01 3 V ss I/01 2 I/01 1 I/01 0 I/09 GENERAL DESCRIPTION The T221160A is a randomly accessed solid state memory containing 1,048,551 bits organized in a x16 configuration. The T221160A has both BYTE WRITE and WORD WRITE access cycles via two CAS pins. It offers Fast Page mode operation The T221160A CAS function and timing are I/02 I/03 I/04 V cc I/05 I/06 I/07 I/08 NC 11 12 13 14 15 16 17 18 19 20 30 29 28 27 26 25 24 23 22 21 NC CA SL CA SH OE NC A7 A6 A5 A4 V SS determined by the first CAS to transition low and by the last to transition back high. Use only one of the two CAS and leave the other staying high during WRITE will result in a BYTE WRITE. CASL transiting low in a WRITE cycle will write data into the lower byte (IO1~IO8), and CASH transiting low will write data into the upper byte (IO9~16). Taiwan Memory Technology, Inc. reserves the right P. 1 to change products or specifications without notice. NC WE RAS NC A0 A1 A2 A3 V cc Publication Date: FEB. 2002 Revision:A tm TE CH T221160A FUNCTIONAL BLOCK DIAGRAM WE CASL CASH CAS CONTROL LOGIC DATA-IN BUFFER DQ01 16 . . DQ16 N O.2 CLOCK GENERATOR DATAOUT BUFFER 8 COLUM N. ADDRESS BUFFER 8 COLUM N DECODER OE 16 A0 A1 A2 A3 A4 A5 A6 A7 8 REFRESH COUNTER REFRESH CONTROLLER 256 8 SENSE AM PLIFIERS VO GATING 256 x 16 8 ROW DECODER 8 ROW . ADDRESS BUFFERS(8) 8 256 256 x 256 x 16 M EM ORY ARRA Y RAS NO.1 CLOCK GENERATOR Vcc Vss PIN DESCRIPTIONS PIN NO. 16~19,22~25 14 28 29 13 27 2~5,6~10,31~34,36~39 1,6,20 21,35,40 11,12,15,30 SYM. A0-A7 RAS CASH CASL WE OE I/O1 - I/O16 Vcc Vss NC TYPE Input Input Input Input Input Input Address Input Row Address Strobe Column Address Strobe /Upper Byte Control Column Address Strobe /Lower Byte Control Write Enable Output Enable DESCRIPTION Input/ Output Data Input/ Output Supply Ground Power, 5V Ground No Connect Taiwan Memory Technology, Inc. reserves the right P. 2 to change products or specifications without notice. Publication Date: FEB. 2002 Revision:A tm TE CH T221160A to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. ABSOLUTE MAXIMUM RATINGS* Voltage on Any pin Relative to VSS… … -1V to 7V Operating Temperature, Ta (ambient)..0°C to +70°C Storage Temperature (plastic)….... -55°C to +150°C Power Dissipation ...............................…......... 1.0W Short Circuit Output Current...................….... 50mA *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS (0°C ≤ Ta ≤ 70°C; VCC = 5V ± 10 % unless otherwise noted) DESCRIPTION CONDITIONS Supply Voltage Supply Voltage Input High (Logic) voltage Input Low (Logic) voltage Input Leakage Current 0V ≤ VIN ≤ 7V 0V ≤ VOUT≤ 7V Output Leakage Current Output(s) disabled Output High Voltage IOH = -5 mA Output Low Voltage IOL = 4.2 mA Note: 1.All Voltages referenced to Vss SYM. Vcc Vss VIH VIL ILI ILO VOH VOL MIN 4.5 0 2.4 -1.0 -10 -10 2.4 MAX 5.5 0 Vcc+1 0.8 10 10 0.4 UNITS V V V V uA uA V V NOTES 1 1 1 Taiwan Memory Technology, Inc. reserves the right P. 3 to change products or specifications without notice. Publication Date: FEB. 2002 Revision:A tm TE CH T221160A DC CHARACTERISTICS (Ta = 0 to 70°C, Vcc = 5V ±10%, Vss = 0V) Parameter Operating Current Standby Current Icc2 Standby Current Fast Page Mode Current RAS -only refresh Current CAS Before RAS Refresh Current 4 4 4 4 Symbol -25 -30 -35 -40 Unit Test Condition RAS , CAS cycling tRC=min TTL interface, Min Max Min Max Min Max Min Max Icc1 - 170 - 150 - 130 - 120 mA mA RAS , CAS =VIH, DOUT=High-Z CMOS interface, RAS , CAS > Vcc-0.2V Icc3 Icc4 Icc5 Icc6 - 2 - 2 - 2 - 2 mA 170 170 170 150 150 150 130 130 130 RAS =VIL, CAS 120 mA cycling, t = min PC CAS =VIH, RAS 120 mA cycling, t = min RC 120 mA RAS , CAS cycling, tRC= min Note: Icc depends on output load condition when the device is selected. Icc max is specified at the output open condition, Icc is specified as an average current. CAPACITANCE (Ta =25°C, Vcc =5V, f = 1M HZ) Parameter Input Capacitance (address) Input Capacitance ( RAS , CAS , WE , OE ) Output Capacitance (data-in/out) Symbol CI1 CI2 CI/O Typ Max 5 7 10 Unit pF pF pF Taiwan Memory Technology, Inc. reserves the right P. 4 to change products or specifications without notice. Publication Date: FEB. 2002 Revision:A tm TE CH T221160A AC CHARACTERISTICS (note 1,2,3) (Ta = 0 to 70°C) AC TEST CONDITIONS: Vcc=5V ±10%, input pulse level = 0 to 3V Input rise and fall times: 2ns Output Load: 2TTL gate + CL (50pF) AC CHARACTERISTICS PARAMETER Read or Write Cycle Time Read-Modify-Write Cycle Time Fast-Page-Mode Read or Write Cycle Time Fast-Page-Mode Read-Write Cycle Time Access Time From RAS Access Time From CAS Access Time From OE Access Time From Column Address Access Time From CAS Precharge RAS Pulse Width RAS Pulse Width RAS Hold Time RAS Precharge Time CAS Pulse Width CAS Hold Time CAS Precharge Time RAS to CAS Delay Time CAS to RAS Precharge Time Row Address Setup Time Row Address Hold Time RAS to Column Address Delay Time Column Address Setup Time Column Address Hold Time Column Address Hold Time (Reference to RAS ) Column Address to RAS Lead Time Read Command Setup Time SYM tRC tRWC tPC tPCM tRAC tCAC tOAC tAA tACP tRAS -25 43 65 15 37 25 7 7 12 14 -30 55 85 20 42 30 8 8 16 18 -35 65 95 23 49 35 9 9 18 20 -40 75 105 25 52 40 10 10 20 22 UNIT Notes MIN MAX MIN MAX MIN MAX MIN MAX ns ns ns ns ns 4 ns 5 ns 13 ns 8 ns 25 10K 30 10K 35 10K 40 10K ns tRASC 25 100K 30 100K 35 100K 40 100K ns ns tRSH 7 8 9 10 tRP tCAS tCSH tCP tRCD tCRP tASR tRAH tRAD tASC tCAH tAR 15 4 21 3 10 3 0 5 8 0 4 22 12 0 0 0 3 3 15 17 10K 20 6 26 3 10 3 0 5 8 0 4 26 14 0 0 0 3 3 15 21 10K 23 8 25 ns 10K 10 10K ns ns 30 35 ns 4 5 10 3 0 5 8 0 4 30 16 0 0 0 3 3 15 25 10 5 0 5 8 0 5 34 18 0 0 0 3 3 15 29 ns 7 ns ns ns ns 8 ns ns ns ns ns 14 ns 9,14 ns 9 ns ns 10,16 13 14 16 18 tRAL tRCS Read Command Hold Time Reference to CAS tRCH Read Command Hold Time Reference to RAS tRRH CAS to Output in Low-Z Output Buffer Turn-off Delay From CAS or RAS tCLZ tOFF1 Taiwan Memory Technology, Inc. reserves the right P. 5 to change products or specifications without notice. Publication Date: FEB. 2002 Revision:A tm TE CH T221160A -25 -30 -35 -40 SYM MIN MAX MIN MAX MIN MAX MIN MAX UNIT Notes tOFF2 tWCS tWCH tWCR tWP tRWL tCWL tDS tDH tDHR tRWD tAWD tCWD tT tREF tRPC tCSR tCHR tOEH tORD 10 5 7 4 0 0 4 22 4 5 5 0 4 22 34 21 17 1.5 50 4 10 10 10 4 0 6 0 4 26 4 6 6 0 4 26 46 29 24 1.5 50 4 10 10 10 4 0 8 0 4 30 4 7 7 0 4 30 51 31 25 2.5 50 4 10 10 10 5 0 8 0 6 34 6 9 8 0 5 34 56 35 27 2.5 50 4 8 ns ns ns ns ns ns ns ns ns ns ns ns ns ns ms ns ns ns ns ns 6 6 15 11 11 11 2,3 14 16 11,14 AC CHARACTERISTICS (continued) AC CHARACTERISTICS PARAMETER Output Buffer Turn-off OE to Write Command Setup Time Write Command Hold Time Write Command Hold Time (Reference to RAS ) Write Command Pulse Width Write Command to RAS Lead Time Write Command to CAS Lead Time Data-in Setup Time Data-in Hold Time Data-in Hold Time (Reference to RAS ) RAS to WE Delay Time Column Address to WE Delay Time CAS to WE Delay Time Transition Time (rise or fall) Refresh Period (256 cycles) RAS to CAS Precharge Time CAS Setup Time (CBR REFRESH) CAS Hold Time (CBR REFRESH) OE Hold Time From WE During ReadModify-Write Cycle OE Setup Prior to RAS During Hidden Refresh Cycle 14 14 14 12 12 Taiwan Memory Technology, Inc. reserves the right P. 6 to change products or specifications without notice. Publication Date: FEB. 2002 Revision:A tm TE CH T221160A 11. tWCS, tRWD, tAWD and tCWD are restrictive operating parameters in LATE WRITE and READ-MODIFY-WRITE cycles only. If tWCS ≥ tWCS(min), the cycle is an EARLY WRITE cycle and the data output will remain an open circuit throughout the entire cycle. If tRWD ≥ tRWD(min), tAWD ≥ tAWD(min) and tCWD ≥ tCWD(min), the cycle is READ-WRITE and the data output will contain data read from the selected cell. If neither of the above conditions is met, the state of I/O (at access time and until CAS and RAS or OE go back to VIH) is indeterminate. OE held high and WE taken low after CAS goes low result in a LATE WRITE ( OE controlled) cycle. 12. These parameters are referenced to CAS leading edge in EARLY WRITE cycles and WE leading edge in LATE WRITE or READMODIFY-WRITE cycles. 13. During a READ cycle, if OE is low then taken HIGH before CAS goes high, I/O goes open, if OE is tied permanently low, a LATE WRITE or READ-MODIFY-WRITE operation is not possible. 14. WRITE command is defined as WE going low. 15. LATE WRITE and READ-MODIFY-WRITE cycles must have both tOFF2 and tOEH met ( OE high during WRITE cycle) in order to ensure that the output buffers will be open during the WRITE cycles. 16. The I/Os open during READ cycles once tOFF1 or tOFF2 occur. Notes: 1. An initial pause of 200us is required after power-up followed by eight RAS refresh cycles ( RAS only or CBR) before proper device operation is assured. The eight RAS cycle wake-ups should be repeated any time the tREF refresh requirement is exceeded. 2. VIH(2.4V) and VIL(0.8V) are reference levels for measuring timing of input signals. Transition times are measured between VIH(2.4V) and VIL(0.8V). 3. In addition to meet the transition rate specification, all input signals must transit between VIH and VIL in a monotonic manner. 4. Assume that tRCD < tRCD(max). If tRCD is greater than the maximum recommended value shown in this table, tRAC will increase by the amount that tRCD exceeds the value shown. 5. Assume that tRCD ≥ tRCD(max) . 6. Enables on-chip refresh and address counters. 7. Operation within the tRCD(max) limit ensures that tRAC(max) can be met. tRCD(max) is specified as a reference point only; if tRCD is greater than the specified tRCD(max) limit, access time is controlled by tCAC. 8. Operation within the tRAD limit ensures that tRAC(max) can be met. tRAD(max) is specified as a reference point only; if tRAD is greater than the specified tRAD(max) limit, access time is controlled by tAA. 9. Either tRCH or tRRH must be satisfied for a READ cycle. 10. tOFF1(max) defines the time at which the output achieves the open circuit condition; it is not a reference to VOH or VOL. Taiwan Memory Technology, Inc. reserves the right P. 7 to change products or specifications without notice. Publication Date: FEB. 2002 Revision:A tm TE CH READ CYCLE t T221160A RC RAS t t RP VIH RAS VIL t t t CRP t CSH RSH t t CRP t RCD RRH VIH CAS VIL t t CAS t AR t t RAD RAH ASC RAL ASR t t CAH VIH ADDR VIL WE VIH VIL ROW t COLUMN RCS t ROW RCH t t t AA NOTE1 RAC CAC CLZ VAILD DATA t OFF1 t VIOH I/O VIOL VIH OE VIL OPEN OPEN t OAC t OFF2 EARLY WRITE CYCLE tRC tRAS tRP VIH RAS VIL tCRP tRCD tCSH tRSH tCAS tCRP RAS VIH VIL t t tAR ASR RAD t RAH t t RAL CSH ASC t VIH ADDR VIL ROW COLUMN tCWL tRWL t tWCS ROW WCR tWCH tWP tDHR VIH WE VIL tDS tDH VIOH VIOL VIH OE VIL I/O VAILD DATA DON'T CARE UNDEFINED Note: tOFF1 is referenced from the rising edge of RAS or CAS , whichever occurs last. Taiwan Memory Technology, Inc. reserves the right P. 8 to change products or specifications without notice. Publication Date: FEB. 2002 Revision:A tm CAS TE CH READ WRITE CYCLE (LATE WRITE and READ-MODIFY-WRITE CYCLES) t T221160A RWC RAS t t RP VIH RAS VIL t t CSH t tRSH CRP t RCD t CAS CRP VIH VIL t tASR t AR t tASC RAD RAL tRAH tCAH VIH ADDR VIL ROW t COLUMN t ROW RWD CWD t t CWL RWL tWP RCS t tAWD VIH WE VIL t t t AA t RAC CAC DS t DH tCLZ VIOH I/O VIOL t VAILD DOUT VAILD D IN t OAC OFF2 t OEH VIH OE VIL FAST-PAGE-MODE READ CYCLE t RA SC t RP RAS V V IH IL t t CSH t t PC t t t RSH CRP t CRP t RCD CAS t CP CAS t CP t CAS CPN V CAS V IH IL t t t AR t t RAD ASC t RAL ASR t RAH CAH t ASC t CAH t ASC t CAH ADDR V V IH IL ROW COLUM N COLUM N COLUM N t ROW RRH t RCS t RCH WE V V IH IL t t t t t AA t t t AA AA t ACP CAC t RAC CAC O FF1 t V A IL D DATA ACP CAC t t O FF1 t t O FF1 CLZ CLZ V A IL D DATA OPEN V I/O V IO H OPEN CLZ V A IL D DATA IO L t OAC t O FF2 t OAC t O FF2 t OAC t O FF2 OE V V IH IL D O N 'T C A R E U N D E F IN E D Note: 1. tOFF1 is referenced from the rising edge of RAS or CAS , whichever occurs last. 2. tPC can be measured from falling edge of CAS to falling edge of CAS , or from rising edge of CAS to rising edge of CAS . Both measurements must meet the tPC specification. Taiwan Memory Technology, Inc. reserves the right P. 9 to change products or specifications without notice. Publication Date: FEB. 2002 Revision:A tm VIH RAS VIL VIH CAS VIL TE CH FAST-PAGE-MODE EARLY-WRITE CYCLE t T221160A RASC t RP t t CSH t t PC t t t t t RSH t CRP t CRP t RCD CAS, CLCH t t CP CAS, CLCH CP t CAS, CLCH CPN t tRAD t AR tRAL t ASR t RAH ASC t CAH t ASC t CAH t ASC t CAH VIH ADDR VIL ROW COLUMN t tWCS COLUMN t tWCS COLUMN t tWCS ROW CWL CWL CWL tWCH t tWCH t tWCH t WP WP WP VIH WE VIL t t WCR DHR t t RWL t DS DH t DS t DH t DS t DH VIOH I/O VIOL VIH OE VIL VALID DATA VALID DATA VALID DATA FAST-PAGE-MODE READ-WRITE CYCLE (LATE WRITE and READ-MODIFY-WRITE CYCLES) tRASC tRP RAS VIH VIL tCRP tRCD tCSH tCAS,tCLCH tCP tPCM tCAS,tCLCH tCP tRSH tCAS,tCLCH tCRP tCPN CAS VIH VIL tASR tAR tRAD tRAH tASC tCAH tASC tCAH tASC tRAL tCAH VIH ADDR VIL ROW COLUMN tRWD tRCS tAWD tCWL tWP tCWD COLUMN tCWL tAWD tWP tCWD COLUMN ROW tRWL tCWL tWP tCWD VIH WE VIL tAA tRAC tCAC tCLZ tDH tDS tACP tCAC tCLZ VAILD D OUT VAILD D IN VAILD D OUT VAILD D IN tAA tDH tDS tAA tDH tACP tCAC tCLZ VAILD D OUT VAILD D IN tDS I/O VIOH VIOL tOAC tOFF2 tOAC tOFF2 tOAC tOFF2 tOEH OE VIH VIL DON'T CARE UNDEFINED Note: tPC can be measured from falling edge to falling edge of CAS , or from rising edge to rising edge of CAS . Both measurements must meet the tPC specification. Taiwan Memory Technology, Inc. reserves the right P. 10 to change products or specifications without notice. Publication Date:FEB. 2002 Revision:A tm RAS V IH V IL CAS V IH V IL TE CH FAST-PAGE-MODE READ-EARLY-WRITE CYCLE (Pseudo READ-MODIFY-WRITE) t T221160A RASC t RP t t t CSH t t t PC t t CRP RCD CAS CP t PC CAS t CP t RSH t CAS CRP t CP t t t AR t t RAD A SC t RAL A SR t RAH CAH t A SC t CAH t A SC t CAH ADDR V IH V IL ROW COLUM N COLUM N t COLUM N ROW RCH t t RCS WCS t WCH WE V IH V IL t t t AA AA t t ACP t RAC t CAC CLZ t CAC O FF1 t t DS t DH O FF1 V A IL D D A T A IN I /O V IO H V IO L V IH V IL OPE N V A IL D D A T A (A ) V A IL D D A T A (B ) t OAC OE RAS ONLY REFRESH CYCLE (ADDR=A0-A7 ; OE , WE =DON‘T CARE) t tRAS RC tRP VIH RAS VIL tCRP tRPC CAS VIH VIL tASR tRAH VIH ADDR VIL ROW ROW tOFF I/O VOH VOL OPEN DON'T CARE UNDEFINED Note1:Do not drive data prior to tristate. Taiwan Memory Technology, Inc. reserves the right P. 11 to change products or specifications without notice. Publication Date:FEB. 2002 Revision:A tm TE CH CBR REFRESH CYCLE (A0-A7 ; OE =DON‘T CARE) t RC t T221160A RP t RAS t RP t RAS RAS VIH VIL tRPC tCPN tCSR tCHR tRPC tCSR tCHR CAS VIH VIL tOFF I/O OPEN WE VIH VIL HIDDEN REFRESH CYCLE ( WE =HIGH ; OE =LOW) (R E A D ) t t (R E F R E S H ) t t RC RP t RC t RAS RAS RP RAS V V IH IL t CRP t RCD t RSH t CHR CAS V V IH IL t t t AR t t RAD ASC t RAL ASR t RAH CAH ADDR V V IH IL ROW COLUM N t t AA NOTE1 RAC t t CAC O FF1 V I/O V t IO H O PEN CLZ V A IL D t DATA O PEN IO L OAC t O FF2 OE V V t IH IL ORD D O N 'T C A R E U N D E F IN E D Note: 1. tOFF1 is referenced from the rising edge of RAS or CAS , whichever occurs last. Taiwan Memory Technology, Inc. reserves the right P. 12 to change products or specifications without notice. Publication Date: FEB. 2002 Revision:A tm 40 TE CH T221160A PACKAGE DIMENSIONS 40-LEAD SOJ DRAM (400 mil) A 21 B 1 20 G K L I D C F Seating Plane H y E 10¢X(MAX ) J SYMBOL A B C D E F G H I J K L y DIMENSIONS IN INCHES 1.025±0.010 0.400±0.005 0.045(MAX) 0.050±0.006 0.019±0.003 0.026±0.003 0.440±0.010 0.011±0.003 0.025(MIN) 0.364±0.020 0.047±0.006 0.150(MAX) 0.004(MAX) DIMENSIONS IN MM 26.035±0.254 10.160±0.127 1.143(MAX) 1.27±0.152 0.483±0.08 0.661±0.080 11.176±0.254 0.280±0.080 0.635(MIN) 9.246±0.508 1.194±0.152 3.810(MAX) 0.102(MAX) Taiwan Memory Technology, Inc. reserves the right P. 13 to change products or specifications without notice. Publication Date: FEB. 2002 Revision:A tm TE CH T221160A PACKAGE DIMENSIONS 40-LEAD TSOP II DRAM (400 mil) D 40 21 E E1 1 20 e b A θ A2 y S E A T IN G P L A N E A1 L L1 SYMBOL A A1 A2 b e D E E1 L1 L y θ DIMENSIONS IN INCHES 0.047(max) 0.004±0.002 0.039±0.002 0.014(typ.) 0.0315(typ.) 0.725±0.004 0.463±0.008 0.400±0.004 0.031 0.020±0.004 0.004(max) 0°~5° DIMENSIONS IN MM 1.20(max) 0.10±0.05 1.00±0.05 0.35(typ.) 0.80typ.) 18.41±0.10 11.76±0.20 10.16±0.10 0.80 0.500±0.10 0.10(max) 0°~5° Taiwan Memory Technology, Inc. reserves the right P. 14 to change products or specifications without notice. Publication Date: FEB. 2002 Revision:A