XBS104V14R-G

XBS104V14R-G ETR1610-002 Schottky Barrier Diode, 1A, 40V Type ■FEATURES ■APPLICATIONS Forward Voltage : VF=0.365V (TYP.) ●Rectification Forward Current : IF(AV)=1A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage : VRM=40V Environmentally Friendly : EU RoHS Compliant, Pb Free ■PACKAGING INFORMATION ■ABSOLUTE MAXIMUM RATINGS Ta=25℃ PARAMETER SYMBOL RATINGS UNIT Repetitive Peak Reverse Voltage VRM 40 V VR 40 V IF(AV) 1 A IFSM 20 A Tj 125 ℃ Tstg -55～+150 ℃ Reverse Voltage (DC) Forward Current (Average) Non Continuous Forward Surge Current *1 Junction Temperature Storage Temperature Range *1： Non continuous high amplitude 60Hz half-sine wave. * When the IC is operated continuously under high load conditions such as high temperature, Cathode Bar high current and high voltage, it may have the case that reliability reduces drastically even if under the absolute maximum ratings. Adequate “Derating” should be taken into consideration while designing. ■MARKING RULE SOD-123A ①: 0 (Product Number) Unit : mm ②: Assembly Lot Number ■PRODUCT NAME PRODUCT NAME DEVICE ORIENTATION XBS104V14R-G SOD-123A(Halogen & Antimony free) XBS104V14R SOD-123A * The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant. * The device orientation is fixed in its embossed tape pocket. ■ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL Forward Voltage Reverse Current Inter-Terminal Capacity Reverse Recovery Time *2 *2：trr measurement circuit TEST CONDITIONS Ta=25℃ LIMITS MIN. TYP. MAX. UNIT VF1 IF=100mA - 0.23 0.315 V VF2 IF=500mA - 0.30 0.385 V VF3 IF=1A - 0.365 0.41 V IR VR=40V - 0.25 2 mA Ct VR=1V , f=1MHz - 150 - pF trr IF=IR=10mA , irr=1mA - 41 - ns Bias Pulse Generatrix Device Under test Oscilloscope 1/3 XBS104V14R-G ■TYPICAL PERFORMANCE CHARACTERISTICS (1) Forward Current vs. Forward Voltage (2) Reverse Current vs. Reverse Voltage 100 1 Reverse Current: IR (mA) Reverse Current　IR (mA) Ta=125℃ Forward Current: IFF (A) Forward Current　I (A) -25℃ 75℃ 0.1 25℃ 0.01 0.001 Ta=100℃ 10 75℃ 1 0.1 25℃ 0.01 0.001 0 0.2 0.4 0.6 0 Forward VF (V) ForwardVoltage: Voltage　V F (V) 10 20 30 40 Reverse VRR(V) (V) ReverseVoltage: Voltage　V (3) Forward Voltage vs. Operating Temperature (4) Reverse Current vs. Operating Temperature 0.6 100 0.4 IF =1A 0.2 0.5A Reverse Current: IR (μA) Reverse Current　IR (uA) Forward VF (V) ForwardVoltage: Voltage　V F (V) VR=10V 0.1A 0.0 5V 1V 10 1 0.1 0.01 0.001 -50 0 50 100 150 0 Operating Ta (℃) OperatingTemperature: Temperature　Ta (℃) 150 (6) Average Forward Current vs. Operating Temperature 2.0 Average Forward Current: IFAV (A) Average Forward Current　IFAV (A) 500 Inter-Terminal Capacity: Ct (pF) Inter-Terminal Capacity　Ct (pF) 100 Operating Ta (℃) Operating Temperature: Temperature　Ta (℃) (5) Inter-Terminal Capacity vs. Reverse Voltage 400 300 200 100 1.5 1.0 0.5 0.0 0 0 10 20 30 Reverse VR (V) ReverseVoltage: Voltage　V R (V) 2/3 50 40 0 50 100 Operating Temperature　Ta (℃) Operating Temperature: Ta (℃) 150 XBS104V14R-G 1. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date. 2. We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. 3. Please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this datasheet. 4. The products in this datasheet are not developed, designed, or approved for use with such equipment whose failure of malfunction can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. Atomic energy; aerospace; transport; combustion and associated safety equipment thereof.) 5. Please use the products listed in this datasheet within the specified ranges. Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. We assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this datasheet may be copied or reproduced without the prior permission of TOREX SEMICONDUCTOR LTD. 3/3