XP264N0301TR-G

XP264N0301TR-G ETR11049-001 N-channel MOSFET 60V, 0.3A ■APPLICATIONS ■FEATURES On-State Resistance Driving voltage Environmentally Friendly ●Switching : RDS(on)＝1.6Ω@VGS =10V : 4.5V : EU RoHS Compliant, Pb Free ■EQUIVALENT CIRCUIT ■PIN CONFIGURATION ●SOT-23(TO-236) Drain 3 1 2 Gate Source ■PRODUCT NAME PRODUCT NAME PACKAGE ORDER UNIT XP264N0301TR-G * SOT-23(TO-236) 3,000 pcs/ Reel * The “-G” suffix denotes Halogen and Antimony free as well as being fully EU RoHS compliant ■ABSOLUTE MAXIMUM RATINGS PARAMETER Ta=25℃ UNITS SYMBOL RATINGS Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current(Pulse) (*1) Channel Power Dissipation (*2) VDSS VGSS ID IDP Pd 60 ±20 0.3 0.6 0.4 V V A A W Junction Temperature Storage Temperature TJ Tstg 150 -55~150 ℃ ℃ PW≦10μs,duty cycle≦1% *(1) *(2) When implemented on a PCB defined by JESD51-7 1/6 XP264N0301TR-G ■ELECTRICAL CHARACTERISTICS Ta=25℃ PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS - V V(BR)DSS ID= 250μA, VGS= 0V 60 - Drain-Source Leakage Current IDSS VDS= 60V, VGS= 0V - - 1 μA Gate-Source Leakage Current IGSS VGS= ±20V, VDS= 0V - - ±10 μA VGS(off) ID= 250uA, VDS= VGS 1.1 1.6 2.1 V VGS= 10V, ID= 100mA - 1.1 1.6 Ω VGS= 4.5V, ID= 100mA - 1.5 2.1 Ω - 30 - pF - 5 - pF - 2.8 - pF - 9 - ns - 4 - ns - 35 - ns - 15 - ns - 0.72 - nC - 0.08 - nC - 0.24 - nC - 0.7 1.1 V Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On Resistance RDS(on) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) Rise Time Turn-off Delay Time Fall Time tr td(off) VDS= 20V, VGS= 0V f= 1MHz VDD= 10V, ID= 100mA VGS= 10V tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Diode Forward Voltage VSD VDS=20V, ID=150mA VGS=10V IS= 100mA, VGS= 0V ■NOTES ON USE 1. Please use this IC within the absolute maximum ratings. Even within the ratings, in case of high load use continuously such as high temperature, high voltage, high current and thermal stress may cause reliability degradation of the IC. 2. Torex places an importance on improving our products and their reliability. We request that users incorporate fail-safe designs and post-aging protection treatment when using Torex products in their systems. 2/6 XP264N0301TR-G ■TYPICAL PERFORMANCE CHARACTERISTICS (1) Drain Current vs. Drain-Source Voltage (2) Drain Current vs. Gate-Source Voltage 1 0.6 10V VDS=10V 4.5V Drain Current : ID (A) Drain Current: ID (A) 3.0V 0.4 VGS=2.5V 0.2 Ta=125℃ 0.1 0.01 25℃ -25℃ Ta=25℃ 0.001 0 0.0 0.5 1.0 1.5 0 2.0 1 (3) Drain-Source On Resistance vs. Gate-Source Voltage 4 (4) Drain-Source On Resistance vs. Ambient Temperature 4 Drain-Source On Resistance: RDS(on) (Ω) 5 Drain-Source On Resistance: RDS(on) (Ω) 3 Gate-Source Voltage: VGS (V) Drain-Source Voltage: VDS (V) Ta=25℃ 4 3 2 ID=100mA 1 0 0 2 4 6 8 3 VGS=4.5V 2 10V 1 ID=100mA 0 -50 10 0 50 100 150 Ambient Temperature: Ta (℃) Gate-Source Voltage: VGS (V) (5) Drain-Source On Resistance vs. Drain Current (6) Source Current vs. Diode Forward Voltage 1 5 Ta=25℃ 4 Source Current: IS (A) Drain-Source On Resistance: RDS(on) (Ω) 2 3 2 4.5V 1 Ta=125℃ 0.1 25℃ 0.01 -25℃ VGS=10V 0.001 0 0.0 0.1 0.2 0.3 0.4 Drain Current: ID (A) 0.5 0.6 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage: VSD (V) 3/6 XP264N0301TR-G ■TYPICAL PERFORMANCE CHARACTERISTICS (7) Ciss, Coss, Crss vs. Drain-Source Voltage (8) Gate-Source Voltage vs. Gate Charge 1000 10 VDS=20V, ID=150mA Gate-Source Voltage: VGS (V) Capacitance: Ciss, Coss, Crss (pF) f=1MHz, Ta=25℃ 100 Ciss 10 Coss 8 6 4 2 Ta=25℃ Crss 1 0 0 10 20 30 40 50 60 (9) Area of Safe Operation 1 Drain Current: ID (A) 100µs 1ms 0.1 DC Operation 10ms Ta=25℃ Single pulse Mounted on a FR4 board (8700mm2 x 1.6mm) 100ms 1s 0.01 0.1 4/6 1 10 Drain-Source Voltage: VDS (V) 0.2 0.4 0.6 Gate Charge: Qg (nC) Drain-Source Voltage: VDS (V) RDS(on) (VGS=10V) Limit 0.0 100 0.8 XP264N0301TR-G ■PACKAGING INFORMATION For the latest package information go to, www.torexsemi.com/technical-support/packages PACKAGE OUTLINE / LAND PATTERN SOT-23(TO-236) SOT-23(TO-236) PKG THERMAL CHARACTERISTICS JESD51-7 Board SOT-23(TO-236)PowerDissipation ■MARKING RULE ●SOT-23(TO-236) SOT-23(TO-236) ①，②，③represents product series 3 MARK ① 6 ② 4 ③ N PRODUCT SERIES XP264N0301**-G ① 1 ② ③ ④ ⑤ 2 ④，⑤ represents production lot number 01 to 09, 0A to 0Z, 11 to 9Z, A1 to A9, AA to AZ, B1 to ZZ repeated (G，I，J，O，Q，W excluded) *No character inversion used 5/6 XP264N0301TR-G 1. The product and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date. 2. The information in this datasheet is intended to illustrate the operation and characteristics of our products. We neither make warranties or representations with respect to the accuracy or completeness of the information contained in this datasheet nor grant any license to any intellectual property rights of ours or any third party concerning with the information in this datasheet. 3. Applicable export control laws and regulations should be complied and the procedures required by such laws and regulations should also be followed, when the product or any information contained in this datasheet is exported. 4. The product is neither intended nor warranted for use in equipment of systems which require extremely high levels of quality and/or reliability and/or a malfunction or failure which may cause loss of human life, bodily injury, serious property damage including but not limited to devices or equipment used in 1) nuclear facilities, 2) aerospace industry, 3) medical facilities, 4) automobile industry and other transportation industry and 5) safety devices and safety equipment to control combustions and explosions. Do not use the product for the above use unless agreed by us in writing in advance. 5. Although we make continuous efforts to improve the quality and reliability of our products; nevertheless Semiconductors are likely to fail with a certain probability. So in order to prevent personal injury and/or property damage resulting from such failure, customers are required to incorporate adequate safety measures in their designs, such as system fail safes, redundancy and fire prevention features. 6. Our products are not designed to be Radiation-resistant. 7. Please use the product listed in this datasheet within the specified ranges. 8. We assume no responsibility for damage or loss due to abnormal use. 9. All rights reserved. No part of this datasheet may be copied or reproduced unless agreed by Torex Semiconductor Ltd in writing in advance. TOREX SEMICONDUCTOR LTD. 6/6