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2SA1736_07

2SA1736_07

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    2SA1736_07 - Power Amplifier Applications Power Switching Applications - Toshiba Semiconductor

  • 数据手册
  • 价格&库存
2SA1736_07 数据手册
2SA1736 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1736 Power Amplifier Applications Power Switching Applications • • • • • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1.5 A) High speed switching time: tstg = 0.2 μs (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC4541 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB PC Collector power dissipation PC (Note 1) Junction temperature Storage temperature range Tj Tstg Rating −60 −50 −6 −3 −0.6 500 1000 150 −55 to 150 mW Unit V V V A A PW-MINI JEDEC JEITA TOSHIBA ― SC-62 2-5K1A °C °C Weight: 0.05 g (typ.) Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 2SA1736 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton Test Condition VCB = −60 V, IE = 0 VEB = −6 V, IC = 0 IC = −10 mA, IB = 0 VCE = −2 V, IC = −100 mA VCE = −2 V, IC = −2 A IC = −1.5 A, IB = −75 mA IC = −1.5 A, IB = −75 mA VCE = −2 V, IC = −100 mA VCB = −10 V, IE = 0, f = 1 MHz Min ― ― −50 120 40 ― ― ― ― ― Typ. ― ― ― ― ― ― ― 100 32 0.1 Max −0.1 −0.1 ― 400 ― −0.5 −1.2 ― ― ― V V MHz pF Unit μA μA V IB2 IB1 IB2 OUTPUT 20 Ω Switching time Storage time tstg INPUT I B1 20 μs ― 0.2 ― μs Fall time tf −IB1 = IB2 = 75 mA, DUTY CYCLE ≤ 1% VCC = −30 V ― 0.1 ― Marking Part No. (or abbreviation code) L Lot No. D A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-09 2SA1736 IC – VCE −4 Common emitter 1000 hFE – IC Ta = 100°C 300 (A) −100 −3 DC current gain hFE Collector current IC −80 −60 −50 −40 −30 Ta = 25°C 100 25 −25 −20 −15 −10 IB = −5 mA −2 30 10 −1 3 0 0 0 −1 −2 −3 −4 −5 1 −1 −3 −10 −30 −100 Common emitter VCE = −2 V −300 −1000 −3000 Collector-emitter voltage VCE (V) Collector current IC (mA) VCE (sat) – IC −10 Common emitter −100 IC/IB = 20 VBE (sat) – IC Common emitter IC/IB = 20 Collector-emitter saturation voltage VCE (sat) (V) −1 Base-emitter saturation voltage VBE (sat) (V) −3 −30 −10 −0.3 Ta = 100°C −0.1 25 −25 −3 Ta = −25°C −1 −0.03 −0.3 25 100 −0.01 −1 −3 −10 −30 −100 −300 −1000 −3000 −0.1 −1 −3 −10 −30 −100 −300 −1000 −3000 Collector current IC (mA) Collector current IC (mA) 3 2006-11-09 2SA1736 IC – VBE −3.0 Common emitter −2.5 VCE = −2 V −3 −10 Safe Operating Area IC max (pulse)* IC max (continuous) 100 ms* t = 1 m s* 10 ms* (A) −2.0 Collector current IC (A) Ta = 100°C 25 −25 −1 −1.5 Collector current IC −1.6 −2.0 −1.0 −0.5 −0.3 **: DC operation 40 × 50 × 0.8 t **: DC operation −0.1 250 mm2 × 0.8 t DC operation Ta = 25°C −0.03 *: Single nonrepetitive pulse Ta = 25°C **: Mounted on a ceramic substrate −0.01 Curves must be derated linearly with increase in temperature −0.005 −0.1 −1 −3 −10 −0.3 0 0 −0.4 −0.8 −1.2 Base-emitter voltage VBE (V) −30 −100 Collector-emitter voltage VCE (V) PC – Ta 1.4 (1) Mounted on a ceramic PC (W) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 (1) substrate (250 mm2 × 0.8 t) (2) No heat sink Collector power dissipation (2) 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 4 2006-11-09 2SA1736 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-09
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