2SC2882
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2882
Power Amplifier Applications Voltage Amplifier Applications
• • • • Suitable for driver of 30 to 35 watts audio amplifier Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1202 Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB PC Collector power dissipation PC (Note 1) Junction temperature Storage temperature range Tj Tstg Rating 80 80 5 400 80 500 1000 150 −55 to 150
2
Unit V V V mA mA
PW-MINI
mW
JEDEC JEITA
― SC-62 2-5K1A
°C °C
TOSHIBA
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm × 0.8 t)
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2SC2882
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note 2) hFE (2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) VBE fT Cob Test Condition VCB = 80 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 IE = 2 mA, IC = 50 mA VCE = 2 V, IC = 200 mA IC = 200 mA, IB = 20 mA VCE = 2 V, IC = 5 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz Min ― ― 80 70 40 ― 0.55 ― ― Typ. ― ― ― ― ― ― ― 100 10 Max 0.1 0.1 ― 240 ― 0.4 0.8 ― ― V V MHz pF Unit µA µA V
―
Note 2: hFE(1) classification
O: 70 to 140, Y: 120 to 240
Marking
Part No. (or abbreviation code)
E
Lot No.
Characteristics indicator
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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2SC2882
IC – VCE
400 5 3 Common emitter Ta = 25°C 500 1000
hFE – IC
Common emitter VCE = 2 V
(mA)
hFE
300
2
300 Ta = 100°C 25 100 −25
Collector current IC
200 1
DC current gain
10
50 30
100
IB = 0.5 mA
0 0 0 2 4 6 8 10 1 3 10 30 100 300
Collector-emitter voltage
VCE
(V)
Collector current
IC (mA)
VCE (sat) – IC
1 Common emitter 500
IC – VBE
Common emitter VCE = 2 V 400 IC/IB = 10
Collector-emitter saturation voltage VCE (sat) (V)
0.5 0.3
Collector current IC
(mA)
300 Ta = 100°C 200 25 −25
0.1 Ta = 100°C 0.05 0.03 1 −25 25
100
3
10
30
100
300
0 0
0.2
0.4
0.6
0.8
1.0
1.2
Collector current
IC (mA)
Base-emitter voltage
VBE
(V)
Safe Operating Area
2000 1000 IC max (pulse)* 1 ms * 1.2
PC – Ta
PC (W)
10 ms * 100 ms * (1) (1) Mounted on a ceramic substrate (250 mm2 × 0.8 t) (2) No heat sink 0.8
500 IC max (continuous)
(mA)
300
1.0
Collector current IC
100 50 DC operation Ta = 25°C 30
Collector power dissipation
0.6
(2)
10 *: Single nonrepetitive pulse 5 3 Ta = 25°C Curves must be derated linearly with increase in temperature. Tested without a substrate. 1 0.5 1 3 10 30 VCEO max 100 300
0.4
0.2
0 0
20
40
60
80
100
120
140
160
Collector-emitter voltage
VCE
(V)
Ambient temperature
Ta
(°C)
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2SC2882
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
030619EAA
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
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2004-07-07
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