2SC2884_04

2SC2884 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2884 Audio Frequency Amplifier Applications • • • • • High DC current gain: hFE = 100 to 320 Suitable for output stage of 1 watts amplifier Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SA1204 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB PC Collector power dissipation PC (Note 1) Junction temperature Storage temperature range Tj Tstg Rating 35 30 5 800 160 500 1000 150 −55 to 150 2 Unit V V V mA mA PW-MINI mW JEDEC JEITA TOSHIBA ― SC-62 2-5K1A °C °C Weight: 0.05 g (typ.) Note 1: Mounted on a ceramic substrate (250 mm × 0.8 t) 1 2004-07-07 2SC2884 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note 2) hFE (2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) VBE fT Cob Test Condition VCB = 35 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 IE = 1 V, IC = 100 mA VCE = 1 V, IC = 700 mA IC = 500 mA, IB = 20 mA VCE = 1 V, IC = 10 mA VCE = 5 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz Min ― ― 30 100 35 ― 0.5 ― ― Typ. ― ― ― ― ― ― ― 120 13 Max 0.1 0.1 ― 320 ― 0.5 0.8 ― ― V V MHz pF Unit µA µA V ― Note 2: hFE (1) classification O: 100 to 200, Y: 160 to 320 Marking Part No. (or abbreviation code) P Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 2SC2884 IC – VCE 1000 Common emitter 800 8 7 6 5 4 600 3 Ta = 25°C 500 1000 hFE – IC Common emitter VCE = 1 V Ta = 100°C 25 −25 (mA) Collector current IC DC current gain 6 7 hFE 300 100 50 30 400 2 200 IB = 1 mA 0 0 0 1 2 3 4 10 1 3 10 30 100 300 1000 Collector-emitter voltage VCE (V) Collector current IC (mA) VCE (sat) – IC 1 Common emitter 800 IC/IB = 25 IC – VBE Common emitter VCE = 1 V Collector-emitter saturation voltage VCE (sat) (V) 0.5 0.3 (mA) Collector current IC Ta = 100°C 25 −25 600 0.1 0.05 0.03 400 Ta = 100°C 25 200 −25 0.01 1 3 10 30 100 300 1000 0 0 0.4 0.8 1.2 1.6 Collector current IC (mA) Base-emitter voltage VBE (V) Safe Operating Area 3000 IC max (pulse)* 1000 IC max (continuous) 10 ms* 1 ms* 1.2 PC – Ta PC (W) (1) (1) Mounted on a ceramic substrate (250 mm2 × 0.8 t) (2) No heat sink 0.8 (mA) 500 300 100 ms* 1.0 Collector current IC 100 50 DC operation Ta = 25°C Collector power dissipation 0.6 (2) 30 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated 10 5 3 0.3 linearly with increase in temperature. Tested without a substrate. 1 3 10 30 VCEO max 100 300 0.4 0.2 0 0 20 40 60 80 100 120 140 160 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 3 2004-07-07 2SC2884 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 4 2004-07-07