2SC3803

2SC3803 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3803 High Frequency Amplifier Applications Video Amplifier Applications High Speed Switching Applications • • • High transition frequency: fT = 200 MHz (typ.) Low collector output capacitance: Cob = 3.5 pF (typ.) Complementary to 2SA1483 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous collector current Continuous base current Symbol VCBO VCEO VEBO IC IB PC Collector power dissipation PC (Note 1) Junction temperature Storage temperature range Tj Tstg Rating 60 45 5 200 50 500 1000 150 −55 to 150 2 Unit V V V mA mA PW-MINI JEDEC JEITA ― SC-62 2-5K1A mW °C °C TOSHIBA Weight: 0.05 g (typ.) Note 1: Mounted on a ceramic substrate (250 mm × 0.8 t) 1 2004-07-07 2SC3803 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Symbol ICBO IEBO hFE (1) DC current gain (Note 2) hFE (2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Input impedance (real part) Collector output capacitance Turn-on time VCE (sat) VBE (sat) fT Re (hie) Cob ton INPUT 680 Ω Switching time Storage time tstg 0 10 V 1 µS 500 Ω 50 Ω Test Condition VCB = 45 V, IE = 0 VEB = 5 V, IC = 0 VCE = 1 V, IC = 10 mA VCE = 3 V, IC = 200 mA IC = 100 mA, IB = 10 mA IC = 100 mA, IB = 10 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IE = −10 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz OUTPUT 200 Ω Min ― ― 40 20 ― ― 100 ― ― ― Typ. ― ― ― ― ― ― 200 ― 3.5 40 Max 0.1 0.1 240 ― 0.3 1.0 ― 120 5.0 ― V V MHz Ω pF Unit µA µA Fall time tf VBB = −3 V DUTY CYCLE ≤ 2% VCC = 12 V ― 250 ― ns ― 30 ― Note 2: hFE (1) classification R: 40 to 80, O: 70 to 140, Y: 120 to 240 Marking Part No. (or abbreviation code) V Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 2SC3803 IC – VCE hFE 200 Common emitter Ta = 25°C 1000 2.5 2.0 1.5 1.2 1.0 120 0.8 0.6 80 0.4 IB = 0.2 mA 0 1 2 3 4 5 500 300 Common emitter VCE = 3 V hFE – IC Ta = 100°C 25 −55 (mA) 160 DC current gain 100 50 30 Collector current IC 10 0.1 0.3 1 3 10 30 100 300 40 Collector current IC (mA) 0 0 Collector-emitter voltage VCE (V) Collector-emitter saturation voltage VCE (sat) (V) VCE (sat) – IC 0.5 0.3 Common emitter IC/IB = 10 0.1 0.05 0.03 25 −55 0.3 1 3 10 30 100 300 Ta = 100°C IC – VCE 200 3.0 1.5 160 1.0 120 0.7 0.5 Common emitter Ta = 100°C 0.01 0.1 Collector current IC (mA) Collector current IC (mA) Base-emitter saturation voltage VBE (sat) (V) 0.4 80 0.3 0.2 40 IB = 0.1 mA 0 0 0 1 2 3 4 5 VBE (sat) – IC 5 3 Common emitter IC/IB = 10 1 0.5 0.3 Ta = −55°C 25 100 Collector-emitter voltage VCE (V) 0.1 0.1 0.3 1 3 10 30 100 300 Collector current IC (mA) IC – VCE 200 PC – Ta 3.0 1.2 PC (W) Common emitter Ta = −55°C 2.5 2.0 (mA) 160 1.0 (1) (1) Mounted on a ceramic 2 substrate (250 mm × 0.8 t) (2) No heat sink Collector current IC 120 1.6 1.2 Collector power dissipation 0.8 0.6 (2) 80 0.8 IB = 0.4 mA 0 0.4 40 0.2 0 0 1 2 3 4 5 0 0 20 40 60 80 100 120 140 160 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 3 2004-07-07 2SC3803 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 4 2004-07-07