2SJ567_06

2SJ567 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (π-MOSV) 2SJ567 Switching Applications Chopper Regulator, DC/DC Converter and Motor Drive Applications • • • • Low drain-source ON-resistance: RDS (ON) = 1.6 Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = −100 μA (max) (VDS = −200 V) Enhancement model: Vth = −1.5 ~ −3.5 V (VDS = −10 V, ID = −1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating −200 −200 ±20 −2.5 −10 20 97.5 −2.5 2.0 150 −55~150 Unit V V V A W mJ A mJ °C °C Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-64 2-7B1B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 6.25 125 Unit °C/W °C/W JEDEC JEITA TOSHIBA ― SC-64 2-7J1B Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = −50 V, Tch = 25°C (initial), L = −25.2 mH, IAR = −2.5 A RG = 25 Ω Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. Weight: 0.36 g (typ.) 1 2006-11-16 2SJ567 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) ⎪Yfs⎪ Ciss Crss Coss tr ton tf toff Qg Qgs Qgd 0V VGS −10 V 50 Ω ID = −1.5 A VOUT VDS = −10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = −200 V, VGS = 0 V ID = −10 mA, VGS = 0 V VDS = −10 V, ID = −1 mA VGS = −10 V, ID = −1.5 A VDS = −10 V, ID = −1.5 A Min ⎯ ⎯ −200 −1.5 ⎯ 1.0 ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ 1.6 2.0 410 40 145 20 Max ±10 −100 ⎯ −3.5 2.0 ⎯ ⎯ ⎯ pF Unit μA μA V V Ω S ⎯ ⎯ ⎯ RL = 66.7 Ω ⎯ VDD ∼ −100 V − ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns Turn-on time Switching time Fall time 45 15 ⎯ ⎯ ⎯ ⎯ ⎯ nC Turn-off time Total gate charge (Gate source plus gate-drain) Gate-source charge Gate-drain (“Miller”) charge Duty < 1%, tw = 10 μs = 85 10 6 4 VDD ∼ −160 V, VGS = −10 V, − ID = −2.5 A Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition ⎯ ⎯ IDR = −2.5 A, VGS = 0 V IDR = −2.5 A, VGS = 0 V, dIDR/dt = 100 A/μs Min ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ 135 0.81 Max −2.5 −10 2.0 ⎯ ⎯ Unit A A V ns μC Marking J567 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-16 2SJ567 ID – VDS −2.0 Common source Tc = 25°C Pulse test −15 −10 −4.6 −4 −15 −8 −6 −5 −4.8 −5 −10 −6 −8 ID – VDS Common source Tc = 25°C Pulse test −5.75 −5.5 −5.25 −5 −2 −4.8 −4.6 −4.4 −1 −4.2 VGS = −4 V −10 −20 −30 −40 −50 −1.6 Drain current ID (A) −1.2 Drain current ID (A) −5 −4.4 −4.2 VGS = −4 V −3 −0.8 −0.4 0 0 −1 −2 −3 −4 0 0 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS −10 Common source −8 VDS = −10 V Pulse test Tc = −55°C −10 VDS – VGS Common source VDS (V) −8 Tc = 25°C Pulse test Drain current ID (A) Drain-source voltage −6 25 −6 −4 100 −4 ID = −2.5 A −1.5 −2 −0.8 −2 0 0 −2 −4 −6 −8 −10 0 0 −4 −8 −12 −16 −20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) ⎪Yfs⎪ – ID 10 Common source 10 Common source Tc = 25°C Pulse test 25 100 VDS = −10 V Pulse test RDS (ON) – ID (S) Forward transfer admittance ⎪Yfs⎪ Drain-source ON-resistance RDS (ON) (Ω) Tc = −55°C VGS = −10 V −15 1 1 0.1 −0.1 −1 −10 0.1 −0.1 −1 −10 Drain current ID (A) Drain current ID (A) 3 2006-11-16 2SJ567 RDS (ON) – Tc 6 Common source VGS = −10 V Pulse test ID = −1.5 A −10 Common source Tc = 25°C Pulse test IDR – VDS Drain-source ON-resistance RDS (ON) (Ω) 4 −1.2 Drain reverse current IDR (A) −1 5 3 −1.0 2 1 −5 0 −80 −40 0 40 80 120 160 −0.1 0 0.2 −3 0.4 −1 0.6 VGS = 0 V 0.8 1 Case temperature Tc (°C) Drain-source voltage VDS (V) Capacitance – VDS 1000 Ciss 5 Vth – Tc Common source Vth (V) 4 VDS = 10 V ID = 1 m A Pulse test (pF) Gate threshold voltage 100 Coss 3 Capacitance C 2 10 Common source VGS = 0 V f = 1 MHz Tc = 25°C 1 −0.1 −1 −10 Crss 1 0 −80 −100 −40 0 40 80 120 160 Case temperature Tc (°C) Drain-source voltage VDS (V) PD – Tc 40 −160 Dynamic input/output characteristics VDS VDS = −40 V −120 −180 −80 −80 −40 VGS −4 −12 Common source ID = −2.5 A Tc = 25°C −8 Pulse test −16 Drain power dissipation PD (W) 20 10 0 0 40 80 120 160 0 0 4 8 12 16 20 Case temperature Tc (°C) Total gate charge Qg (nC) 4 2006-11-16 Gate-source voltage VGS 30 Drain-source voltage VDS (V) (V) 2SJ567 rth – tw 3 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 0.5 0.3 0.1 0.05 0.03 0.01 0.005 0.003 0.001 10 μ Duty = 0.5 0.2 0.1 0.05 0.02 Single pulse PDM t 0.01 T Duty = t/T Rth (ch-c) = 6.25°C/W 100 μ 1m 10 m 100 m 1 10 100 Pulse width tw (S) Safe operating area −30 −10 −5 −3 ID max (pulse) * 100 μs* 100 EAS – Tch Avalanche energy EAS (mJ) 80 1 ms* (A) 60 Drain current ID −1 −0.5 −0.3 −0.1 −0.05 −0.03 −0.01 −0.005 −0.1 * Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. −0.3 −1 −3 −10 −30 −100 −300 VDSS max DC operation 40 20 0 25 50 75 100 125 150 Channel temperature Tch (°C) Drain-source voltage VDS (V) 15 V −15 V BVDSS IAR VDD VDS Waveform Test circuit RG = 25 Ω VDD = −50 V, L = 25.2 mH Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 VDSS − VDD ⎠ ⎝ 5 2006-11-16 2SJ567 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-16