74HC541D

74HC540D,74HC541D CMOS Digital Integrated Circuits Silicon Monolithic 74HC540D,74HC541D 1. Functional Description • Octal Bus Buffer 74HC540D: INVERTING, 3-STATE OUTPUTS 74HC541D: NON-INVERTING, 3-STATE OUTPUTS 2. General The 74HC540D/74HC541D are high speed CMOS OCTAL BUS BUFFERs fabricated with silicon gate C2MOS technology. They achieve the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The 74HC540D is an inverting type, and the 74HC541D is a non-inverting type. When either G1 or G2 are high, the terminal outputs are in the high-impedance state. All inputs are equipped with protection circuits against static discharge or transient excess voltage. 3. Features (1) Wide operating temperature range: Topr = -40 to 125 � (Note 1) (2) High speed: tpd = 10 ns (typ.) at VCC = 6.0 V (3) Low power dissipation: ICC = 4.0 µA (max) at Ta = 25 � (4) Balanced propagation delays: tPLH ≈ tPHL (5) Wide operating voltage range: VCC(opr) = 2.0 V to 6.0 V Note 1: Operating Range spec of Topr = -40 � to 125 � is applicable only for the products which manufactured after July 2020. 4. Packaging SOIC20 Start of commercial production 2020-07 ©2016-2020 Toshiba Electronic Devices & Storage Corporation 1 2020-11-17 Rev.3.0 74HC540D,74HC541D 5. Pin Assignment 74HC540D 74HC541D 6. Marking 74HC540D 74HC541D 7. IEC Logic Symbol 74HC540D ©2016-2020 Toshiba Electronic Devices & Storage Corporation 74HC541D 2 2020-11-17 Rev.3.0 74HC540D,74HC541D 8. Truth Table Input G1 X: Z: Yn: Yn: Input G2 Input An Output Yn Output Yn H X X Z Z X H X Z Z L L H H L L L L L H Don't care High impedance 74HC541D 74HC540D 9. Absolute Maximum Ratings (Note) Characteristics Symbol Note Rating Unit Supply voltage VCC -0.5 to 7.0 V Input voltage VIN -0.5 to VCC + 0.5 V VOUT -0.5 to VCC + 0.5 V IIK ±20 mA Output diode current IOK ±20 mA Output current IOUT ±35 mA VCC/ground current ICC Power dissipation PD Storage temperature Tstg Output voltage Input diode current (Note 1) ±75 mA 500 mW -65 to 150 � Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: PD derates linearly with -8 mW/� above 85 � 10. Operating Ranges (Note) Characteristics Symbol Test Condition Note Rating Unit Supply voltage VCC 2.0 to 6.0 V Input voltage VIN 0 to VCC V Output voltage VOUT Operating temperature Topr Input rise and fall times tr,tf 0 to VCC V -40 to 125 � VCC = 2.0 V 0 to 1000 ns VCC = 4.5 V 0 to 500 VCC = 6.0 V 0 to 400 (Note 1) Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. Note 1: Operating Range spec of Topr = -40 � to 125 � is applicable only for the products which manufactured after July 2020. ©2016-2020 Toshiba Electronic Devices & Storage Corporation 3 2020-11-17 Rev.3.0 74HC540D,74HC541D 11. Electrical Characteristics 11.1. DC Characteristics (Unless otherwise specified, T a = 25 �) Characteristics High-level input voltage Low-level input voltage High-level output voltage Low-level output voltage Symbol Test Condition VCC (V) Min Typ. Max Unit VIH � 2.0 1.50 � � V 4.5 3.15 � � 6.0 4.20 � � 2.0 � � 0.50 4.5 � � 1.35 VIL VOH VOL � VIN = VIH or VIL VIN = VIH or VIL 6.0 � � 1.80 2.0 1.9 2.0 � 4.5 4.4 4.5 � 6.0 5.9 6.0 � IOH = -6 mA 4.5 4.18 4.31 � IOH = -7.8 mA 6.0 5.68 5.80 � IOL = 20 µA 2.0 � 0.0 0.1 4.5 � 0.0 0.1 IOH = -20 µA 6.0 � 0.0 0.1 IOL = 6 mA 4.5 � 0.17 0.26 IOL = 7.8 mA V V V 6.0 � 0.18 0.26 IOZ VIN = VIH or VIL VOUT = VCC or GND 6.0 � � ±0.5 µA Input leakage current IIN VIN = VCC or GND 6.0 � � ±0.1 µA Quiescent supply current ICC VIN = VCC or GND 6.0 � � 4.0 µA 3-state output OFF-state leakage current 11.2. DC Characteristics (Unless otherwise specified, T a = -40 to 85 �) Characteristics High-level input voltage Low-level input voltage High-level output voltage Low-level output voltage 3-state output OFF-state leakage current Symbol Test Condition VCC (V) Min Max Unit VIH � 2.0 1.50 � V 4.5 3.15 � 6.0 4.20 � 2.0 � 0.50 4.5 � 1.35 6.0 � 1.80 2.0 1.9 � 4.5 4.4 � VIL VOH VOL � VIN = VIH or VIL IOH = -20 µA VIN = VIH or VIL V V 6.0 5.9 � IOH = -6 mA 4.5 4.13 � IOH = -7.8 mA 6.0 5.63 � IOL = 20 µA 2.0 � 0.1 4.5 � 0.1 6.0 � 0.1 IOL = 6 mA 4.5 � 0.33 IOL = 7.8 mA 6.0 � 0.33 ±5.0 µA V IOZ VIN = VIH or VIL VOUT = VCC or GND 6.0 � Input leakage current IIN VIN = VCC or GND 6.0 � ±1.0 µA Quiescent supply current ICC VIN = VCC or GND 6.0 � 40.0 µA ©2016-2020 Toshiba Electronic Devices & Storage Corporation 4 2020-11-17 Rev.3.0 74HC540D,74HC541D 11.3. DC Characteristics (Note) (Unless otherwise specified, T a = -40 to 125 �) Characteristics High-level input voltage Low-level input voltage High-level output voltage Low-level output voltage 3-state output OFF-state leakage current Symbol Test Condition VIH � VIL VOH VOL � VIN = VIH or VIL IOH = -20 µA VIN = VIH or VIL VCC (V) Min Max Unit 2.0 1.50 � V 4.5 3.15 � 6.0 4.20 � 2.0 � 0.50 4.5 � 1.35 6.0 � 1.80 2.0 1.9 � 4.5 4.4 � V V 6.0 5.9 � IOH = -6 mA 4.5 3.7 � IOH = -7.8 mA 6.0 5.2 � IOL = 20 µA 2.0 � 0.1 4.5 � 0.1 6.0 � 0.1 IOL = 6 mA 4.5 � 0.4 IOL = 7.8 mA 6.0 � 0.4 ±5.0 µA V IOZ VIN = VIH or VIL VOUT = VCC or GND 6.0 � Input leakage current IIN VIN = VCC or GND 6.0 � ±1.0 µA Quiescent supply current ICC VIN = VCC or GND 6.0 � 80.0 µA Note: Operating Range spec of Topr = -40 � to 125 � is applicable only for the products which manufactured after July 2020. ©2016-2020 Toshiba Electronic Devices & Storage Corporation 5 2020-11-17 Rev.3.0 74HC540D,74HC541D 11.4. AC Characteristics (Unless otherwise specified, T a = 25 �, Input: t r = t f = 6 ns) Characteristics Part Number Output transition time Symbol Note Test Condition tTLH,tTHL Propagation delay time tPLH,tPHL CL (pF) VCC (V) Min Typ. Max Unit 50 2.0 � 25 60 ns 4.5 � 7 12 6.0 � 6 10 2.0 � 36 90 4.5 � 12 18 6.0 � 10 15 2.0 � 51 130 4.5 � 17 26 6.0 � 14 22 2.0 � 45 125 4.5 � 14 25 6.0 � 12 21 2.0 � 60 165 4.5 � 19 33 6.0 � 16 28 2.0 � 40 125 4.5 � 16 25 6.0 � 14 21 50 150 Output enable time tPZL,tPZH RL = 1 kΩ 50 150 Output disable time tPLZ,tPHZ Input capacitance Output capacitance Power dissipation capacitance 74HC540D RL = 1 kΩ 50 ns ns ns CIN � � 5 10 pF COUT � � 10 � pF � � 32 � pF � 35 � CPD (Note 1) 74HC541D Note 1: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation. ICC(opr) = CPD × VCC × fIN + ICC/8 (per bit) 11.5. AC Characteristics (Unless otherwise specified, T a = -40 to 85 �, Input: t r = t f = 6 ns) Characteristics Output transition time Propagation delay time Symbol Test Condition CL (pF) VCC (V) Min Max Unit tTLH,tTHL � 50 2.0 � 75 ns 4.5 � 15 6.0 � 13 2.0 � 115 4.5 � 23 6.0 � 20 2.0 � 165 4.5 � 33 6.0 � 28 2.0 � 155 4.5 � 31 6.0 � 26 2.0 � 205 4.5 � 41 6.0 � 35 2.0 � 155 4.5 � 31 6.0 � 26 � 10 tPLH,tPHL � 50 150 Output enable time tPZL,tPZH RL = 1 kΩ 50 150 Output disable time Input capacitance tPLZ,tPHZ CIN ©2016-2020 Toshiba Electronic Devices & Storage Corporation RL = 1 kΩ 50 � 6 ns ns ns pF 2020-11-17 Rev.3.0 74HC540D,74HC541D 11.6. AC Characteristics (Note) (Unless otherwise specified, T a = -40 to 125 �, Input: t r = t f = 6 ns) Characteristics Output transition time Propagation delay time Symbol Test Condition CL (pF) VCC (V) Min Max Unit tTLH,tTHL � 50 2.0 � 85 ns 4.5 � 17 6.0 � 15 2.0 � 135 4.5 � 27 6.0 � 24 2.0 � 190 4.5 � 38 6.0 � 32 2.0 � 175 4.5 � 35 6.0 � 30 2.0 � 235 4.5 � 47 6.0 � 40 2.0 � 175 4.5 � 35 6.0 � 30 � 10 tPLH,tPHL � 50 150 Output enable time tPZL,tPZH RL = 1 kΩ 50 150 Output disable time Input capacitance Note: tPLZ,tPHZ CIN RL = 1 kΩ 50 � ns ns ns pF Operating Range spec of Topr = -40 � to 125 � is applicable only for the products which manufactured after July 2020. ©2016-2020 Toshiba Electronic Devices & Storage Corporation 7 2020-11-17 Rev.3.0 74HC540D,74HC541D Package Dimensions Unit: mm Weight: 0.51 g (typ.) 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