CRS05
TOSHIBA Schottky Barrier Diode
CRS05
○ Secondary Rectification in Switching Regulators
○ Reverse-Current Protection in Mobile Devices
•
•
•
•
•
Repetitive peak reverse voltage
Average forward current
Peak forward voltage
Repetitive peak reverse current
Unit: mm
: VRRM = 30 V
: IF (AV) = 1.0 A
: VFM = 0.45 V (max) @IFM = 1.0 A
: IRRM = 5 μA (max) @VRRM = 5 V
The use of small, thin surface-mount package is optimum way
for high-density mounting.
Nickname: S-FLATTM
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
30
V
Average forward current
IF(AV)
Non-repetitive peak forward surge current
IFSM
20 (50 Hz)
A
Junction temperature
Tj
−40 to 150
°C
Storage temperature
Tstg
−40 to 150
°C
1.0 (Note 1)
1.0 (Note 2)
A
1 ANODE
2 CATHODE
Note 1: Ta = 102°C
Device mounted on a ceramic board
JEDEC
―
board size
:50 mm × 50 mm
Soldering land size
:2 mm × 2 mm
JEITA
―
board thickness
:0.64 mm
TOSHIBA
3-2A1S
Rectangular waveform :α = 180°, VR = 15 V
Note 2: Ta = 54.7°C
Device mounted on a glass-epoxy board
Weight: 0.013 g (typ.)
board size
:50 mm × 50 mm
Soldering land size
:6 mm × 6 mm
board thickness
:1.6 mm
Rectangular waveform :α = 180°, VR = 15 V
Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Peak forward voltage
Repetitive peak reverse current
Junction capacitance
Thermal resistance
(junction to ambient)
Symbol
Test Condition
Min
Typ.
Max
―
VFM (1)
IFM = 0.1 A (pulse test)
―
0.33
VFM (2)
IFM = 0.7 A (pulse test)
―
0.40
―
VFM (3)
IFM = 1.0 A (pulse test)
―
0.42
0.45
IRRM (1)
VRRM = 5 V (pulse test)
―
2.0
5.0
IRRM (2)
VRRM = 30 V (pulse test)
―
20
200
VR = 10 V, f = 1.0 MHz
―
60
―
―
―
70
Cj
Rth (j-a)
Device mounted on a ceramic board
board size
50 mm × 50 mm
soldering land size
2 mm × 2 mm
board thickness
0.64 mm
Device mounted on a glass-epoxy board
board size
50 mm × 50 mm
soldering land size
6 mm × 6 mm
board thickness
1.6 mm
Unit
V
μA
pF
°C/W
―
―
140
Start of commercial production
1
2000-07
2019-04-01
CRS05
Marking
Abbreviation Code
Part No.
S5
CRS05
Land pattern dimensions for reference only
Unit: mm
1.2
1.2
2.8
Usage Considerations
1)
Schottky barrier diodes have reverse current characteristics compared to other diodes.
There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage.
Please take forward and reverse loss into consideration during design.
2)
The absolute maximum ratings are rated values that must not be exceeded for a moment to have you use an
element safely. Please refer to each following absolute maximum ratings on the occasion of use and design.
VRRM: VRRM has a temperature coefficient of 0.1 %/°C.
Please take this coefficient into account when designing a circuit board that will be operated in
a low-temperature environment.
IF(AV): We recommend that the current be in less than 80 % of rating and the junction temperature (Tj)
be in less than 80 % of absolute maximum rating under the worst condition.
This rating is based on the premise that the device is radiating heat enough.
Therefore, when enough heat radiation is not expected, please consider the margin to the
permission curve of Ta(max) - IF(AV) for using the device.
IFSM : This rating specifies a non-repetitive limit value.
This only applies to an abnormal operation, which seldom occurs during the lifespan of a device.
Tj
: Derate device parameters in proportion to this rating in order to ensure high reliability.
We recommend that the junction temperature (Tj) of a device be kept below 80 %.
3)
Thermal resistance (junction-to-ambient) varies with the mounting conditions of the device on the circuit board. An
appropriate thermal resistance value that should be used, must be considering the circuit board design and
soldering land size.
4)
For other design considerations, see the Toshiba website.
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2019-04-01
CRS05
I F – VF
PF (AV) – IF (AV)
Forward current IF
Average forward power dissipation
PF (AV) (W)
0.6
(A)
10
Tj = 150°C
125°C
1
25°C
75°C
0.5
DC
180°
0.4
120°
0.3
α = 60°
Rectangular
waveform
0.2
0° α
0.1
Conduction
angle: α
Pulse test
0.1
0
0.1
0.2
0.3
0.4
0.5
Forward voltage
0.6
VF
0.7
0.8
0
0
0.9
0.2
0.4
DC
120
100
180°
80
60
40
Rectangular
waveform
120°
IF(AV)
α = 60°
0° α
20
0
0
360°
Conduction angle: α
VR = 15 V
0.2
0.4
0.6
0.8
1.0
Average forward current
1.2
1.4
IF (AV)
160
Maximum allowable ambient temperature
Ta max (°C)
Maximum allowable ambient temperature
Ta max (°C)
140
140
Repetitive peak forward current IFRM
Transient thermal resistance
rth (j-a) (°C/W)
(A)
time t
(A)
α = 60°
80
60
120°
Rectangular
waveform
IF(AV)
40
20
180°
0° α
360°
Conduction angle: α
VR = 15 V
0.2
0.4
0.6
0.8
1.0
1.2
IF (AV)
1.4
1.6
(A)
Repetitive peak forward current
Device mounted on a ceramic board:
board size: 50 mm × 50 mm
Soldering land: size 2 mm × 2 mm
board thickness: 0.64 mm
1
1.6
100
Average forward current
100
0.1
1.4
DC
(A)
Device mounted on a glass-epoxy board:
board size: 50 mm × 50 mm
Soldering land size: 6 mm × 6 mm
board thickness: 1.6 mm
0.01
1.2
IF (AV)
120
rth (j-a) – t
1
0.001
1.0
Device mounted on a ceramic board:
board size: 50 mm × 50 mm
Soldering land size: 2 mm × 2 mm
board thickness: 0.64 mm
0
0
1.6
1000
100
0.8
Ta max – IF (AV)
Device mounted on a glass-epoxy board:
board size: 50 mm × 50 mm
Soldering land size: 6 mm × 6 mm
board thickness: 1.6 mm
160
0.6
Average forward current
(V)
Ta max – IF (AV)
180
360°
10
100
(s)
28
Ta = 25°C
f = 50 Hz
24
20
16
12
8
4
0
1
10
100
Number of cycles
3
2019-04-01
CRS05
I R – Tj
PR (AV) – VR
0.8
Pulse test
Average reverse power dissipation
PR (AV) (W)
Repetitive peak reverse current
IR (mA)
100
10
VR = 30 V
1
20 V
0.1
15 V
10 V
5V
0.01
0.001
0
20
40
60
80
100
Junction temperature Tj
120
140
0.7
0.6
VR
DC
0.5 Conduction angle: α
Tj = 150°C
0.4
300°
240°
0.3
0.2
180°
120°
α = 60°
0.1
0
0
160
Rectangular
waveform
0° 360°
10
20
Reverse voltage VR
(°C)
30
(V)
Cj – VR
1000
f = 1 MHz
Junction capacitance
Cj
(pF)
Ta = 25°C
100
10
1
10
Reverse voltage VR
100
(V)
4
2019-04-01
CRS05
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2019-04-01