GT40Q321

GT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Resonance Inverter Switching Application • • • • • Fifth-generation IGBT Enhancement mode type High speed : tf = 0.41 μs (typ.) (IC = 40A) Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A) FRD included between emitter and collector Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Diode forward current Collector power dissipation Junction temperature Storage temperature range DC Pulsed @ Tc = 100°C @ Tc = 25°C @ Tc = 100°C @ Tc = 25°C Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 1200 ±25 23 42 80 10 80 68 170 150 −55 to 150 Unit V V A A A W W °C °C JEDEC JEITA TOSHIBA ― ― 2-16C1C Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance (IGBT) Thermal resistance (diode) Symbol Rth (j-c) Rth (j-c) Max 0.74 1.79 Unit °C/W °C/W Equivalent Circuit Collector Marking TOSHIBA Gate Emitter GT40Q321 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-11-01 GT40Q321 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Diode forward voltage Reverse recovery time Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF trr IF = 10 A, VGE = 0 IF = 10 A, di/dt = −20 A/μs Test Condition VGE = ±25 V, VCE = 0 VCE = 1200 V, VGE = 0 IC = 40 mA, VCE = 5 V IC = 40 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Resistive Load VCC = 600 V, IC = 40 A VGG = ±15 V, RG = 39 Ω (Note 1) Min ― ― 4.0 ― ― ― ― ― ― ― ― Typ. ― ― ― 2.8 3200 0.19 0.25 0.41 0.57 ― 0.6 Max ±500 5.0 7.0 3.6 ― ― ― 0.72 ― 2.0 ― V µs μs Unit nA mA V V pF Note 1: Switching time measurement circuit and input/output waveforms VGE 0 RG 0 VCC 0 VCE td (off) RL IC 90% 90% 10% 90% 10% tf toff 10% tr ton General Safety Precautions and Usage Considerations • • The GT40Q321 is only intended for single-transistor voltage resonant circuits in induction heating (IH) equipment. For other applications, please contact your nearest Toshiba sales office. Do not use devices under conditions in which their maximum ratings will be exceeded. A device may break down or its performance may be degraded, causing thermal runaway or explosion resulting in injury to the user. It is therefore necessary to incorporate device derating into circuit design. In all IGBT devices, maximum collector-emitter voltage (VCES) decreases when the junction temperature becomes low. It is therefore necessary to incorporate device derating into circuit design. Maximum collector current is calculated from Tj MAX.(150°C), the thermal resistance and DC forward power dissipation. However it’s limited in real application by another factor such as switching loss, limitation of the inner bonding wires and so on. • • 2 2006-11-01 GT40Q321 IC – VCE 80 VCE – VGE 10 20 15 VCE (V) Common emitter Tc = 25°C 12 Common emitter Tc = −40°C 8 (A) 60 10 Collector current IC Collector-emitter voltage 6 80 4 20 40 IC = 1 0 A 40 20 VGE = 8 V 2 0 0 1 2 3 4 5 0 0 5 10 15 20 25 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE – VGE 10 Common emitter 10 VCE – VGE Common emitter VCE (V) Tc = 25°C 8 VCE (V) Tc = 125°C 8 Collector-emitter voltage 6 80 4 40 IC = 1 0 A 20 Collector-emitter voltage 6 80 4 20 2 IC = 1 0 A 40 2 0 0 5 10 15 20 25 0 0 5 10 15 20 25 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) IC – VGE 80 Common emitter VCE = 5 V 6 Common emitter VGE = 15 V VCE (sat) – Tc Collector-emitter saturation voltage VCE (sat) (V) 5 (A) 80 60 Collector current IC 4 40 3 20 2 IC = 1 0 A 1 40 20 25 Tc = 125°C 0 0 4 −40 8 12 16 0 −60 −20 20 60 100 140 Gate-emitter voltage VGE (V) Case temperature Tc (°C) 3 2006-11-01 GT40Q321 VCE, VGE – QG 400 Common emitter RL = 7.5 Ω Tc = 25°C 20 50000 30000 C – VCE (V) VGE (V) 10000 5000 3000 1000 500 300 100 Collector-emitter volgate VCE (pF) 300 15 Cies 200 VCE = 300 V 10 Gate-emitter voltage Capacitance C 100 V 100 200 V 5 Coes 0 0 50 100 150 0 200 Common emitter 50 V GE = 0 30 f = 1 MHz Tc = 25°C 10 0.1 0.3 1 Cres 3 10 30 100 300 1000 Gate charge QG (nC) Collector-emitter voltage VCE (V) Switching time – IC 10 5 3 Common emitter VCC = 600 V RG = 39 Ω VGG = ±15 V Tc = 25°C toff tf ton tr 5 Switching time – RG Common emitter 3 VCC = 600 V IC = 4 0 A VGG = ±15 V Tc = 25°C 1 0.5 0.3 toff tf ton tr Switching time (μs) 1 0.5 0.3 Switching time (μs) 20 30 40 50 0.1 0.05 0.03 0.1 0.05 0.03 0.01 0 10 0.01 1 3 10 30 100 300 1000 Collector current IC (A) Gate resistance RG (Ω) Safe operating area 5000 3000 1000 *Single non-repetitive pulse Tc = 25°C Curves must be derated linearly with increases in temperature. 5000 3000 1000 Reverse bias SOA Tj ≤ 125°C VGG = 20 V RG = 10 Ω (A) Collector current IC 100 IC max (pulsed)* 50 30 10 5 3 1 1 DC operation 1 ms* IC max (continuous) 100 μs* 10 μs* Collector current IC 3000 10000 500 300 (A) 500 300 100 50 30 10 5 3 1 1 10 ms* 3 10 30 100 300 1000 3 10 30 100 300 1000 3000 10000 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 4 2006-11-01 GT40Q321 ICmax – Tc (A) 50 Common emitter 40 VGE = 15 V 102 rth (t) – tw Tc = 25°C Maximum DC collector current ICmax Transient thermal impedance rth (t) (°C/W) 101 Diode stage 10 0 30 IGBT stage 10−1 20 1 0 −2 10 1 0 −3 10−5 0 25 50 75 100 125 150 10−4 1 0 −3 10−2 10−1 100 101 102 Pulse width tw (s) Case temperature Tc (°C) IF – V F 80 Common collector VGE = 0 0.8 −40 25 Tc = 125°C trr, Irr – IF 8 trr 40 0.4 Irr 4 20 0.2 Common collector di/dt = −20 A/μs Tc = 25°C 0 0 2 10 0 1 2 3 4 10 20 30 40 0 50 Forward voltage VF (V) Forward current IF (A) trr, Irr – di/dt 1.0 Common collector IF = 1 0 A Tc = 25°C 20 (μs) 0.8 16 trr 0.6 trr 12 0.4 8 0.2 Irr 4 0.0 0 50 100 150 200 0 250 di/dt (A/μs) Reverse recovery current Reverse recovery time Irr (A) 5 2006-11-01 Reverse recovery current Irr 60 trr (μs) (A) 0.6 6 Forward current IF Reverse recovery time (A) GT40Q321 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-01