MP4210

MP4210 TOSHIBA Power MOS FET Module Silicon N Channel MOS Type (Four L2-π-MOSV inOne) MP4210 High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver • • • • • • • 4-V gate drivability Small package by full molding (SIP 10 pins) High drain power dissipation (4-device operation) : PT = 4 W (Ta = 25°C) Low drain-source ON resistance: RDS (ON) = 0.12 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IGSS = ±10 μA (max) (VGS = ±16 V) IDSS = 100 μA (max) (VDS = 60 V) Enhancement-mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Industrial Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse Symbol VDSS VDGR VGSS ID IDP PD PDT EAS IAR EAR EART Tch Tstg Rating 60 60 ±20 5 20 2.0 4.0 129 5 0.2 mJ 0.4 150 −55 to 150 °C °C Unit V V V A W W mJ A JEDEC JEITA TOSHIBA ― ― 2-25A1C Weight: 2.1 g (typ.) Drain power dissipation (1-device operation, Ta = 25°C) Drain power dissipation (4-device operation, Ta = 25°C) Single pulse avalanche energy (Note 1) Avalanche current 1-device operation Repetitive avalanche energy (Note 2) 4-device operation Channel temperature Storage temperature range Note 1: Condition for avalanche energy (single pulse) measurement VDD = 25 V, starting Tch = 25°C, L = 7 mH, RG = 25 Ω, IAR = 5 A Note 2: Repetitive rating; pulse width limited by maximum channel temperature Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-10-27 MP4210 Array Configuration 7 9 6 10 3 5 8 2 1 4 Thermal Characteristics Characteristics Thermal resistance from channel to ambient (4-device operation, Ta = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for t = 10 s) TL 260 °C Symbol Max Unit ΣRth (ch-a) 31.2 °C/W Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr VGS Turn-on time Switching time Fall time tf ton 10 V 0V 50 Ω Test Condition VGS = ±16 V, VDS = 0 V VDS = 60 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 4 V, ID = 2.5 A VGS = 10 V, ID = 2.5 A VDS = 10 V, ID = 2.5 A VDS = 10 V, VGS = 0 V f = 1 MHz Min ― ― 60 0.8 ― ― 3.0 ― ― ― ― VOUT ― 25 ― ns ― 55 ― Typ. ― ― ― ― 0.21 0.12 5.0 370 60 180 18 Max ±10 100 ― 2.0 0.32 0.16 ― ― ― ― ― Unit μA μA V V Ω S pF pF pF ID = 2.5 A RL = 12 Ω VDD ≈ 30 V VIN: tr, tf < 5 ns, duty ≤ 1%, tw = 10 μs ― 170 ― Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (“miller”) charge toff Qg Qgs Qgd VDD ≈ 48 V, VGS = 10 V ID = 5 A ― ― ― 12 8 4 ― ― ― nC nC nC 2 2006-10-27 MP4210 Source-Drain Diode Ratings and Characteristics (Ta = 25°C) Characteristics Continuous drain reverse current Pulse drain reverse current Diode forward voltage Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition ― ― IDR = 5 A, VGS = 0 V IDR = 5 A, VGS = 0 V dIDR/dt = 50 A/μs Min ― ― ― ― ― Typ. ― ― ― 70 0.1 Max 5 20 −1.7 ― ― Unit A A V ns μC Marking MP4210 JAPAN Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 3 2006-10-27 MP4210 ID – VDS 5 10 8 6 4 3.5 20 10 16 8 6 ID – VDS Common source Tc = 25°C 4 Drain current ID (A) 3 3 2 Common source Tc = 25°C 1 VGS = 2.5 V 0 0 Drain current ID (A) 3.3 12 4.5 8 4 3.5 4 3 VGS = 2.5 V 0 0 0.4 0.8 1.2 1.6 2.0 4 8 12 16 20 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS 10 Common source VDS = 10 V 8 2.0 VDS – VGS Common source VDS (V) Tc = 25°C 1.6 Drain current ID (A) Drain-source voltage 6 1.2 8 0.8 5 0.4 ID = 2.5 A 4 2 25 Tc = −55°C 100 0 0 2 4 6 8 10 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| – ID |Yfs| (S) 20 Common source VDS = 10 V 0.5 RDS (ON) – ID Forward transfer admittance Drain-source ON resistance RDS (ON) (Ω) 10 0.3 VGS = 4 V 10 0.1 5 3 Tc = −55°C 25 100 1 0.05 Common source Tc = 25°C 0.5 0.3 0.5 1 3 5 10 30 0.03 0.3 0.5 1 3 5 10 Drain current ID (A) Drain current ID (A) 4 2006-10-27 MP4210 RDS (ON) – Tc (Ω) 0.4 Common source 20 10 5 3 10 3 IDR – VDS Drain-source ON resistance RDS (ON) 2.5 ID = 4 A 0.2 VGS = 4 V 4 2.5, 1.3 0.1 VGS = 10 V 1.3 Drain reverse current IDR 0.3 (A) 1 0.5 0.3 Common source Tc = 25°C 0.1 0 1 VGS = 0, −1 V 0 −80 −40 0 40 80 120 160 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 Case temperature Tc (°C) Drain-source voltage VDS (V) Capacitance – VDS 3000 2.5 Vth – Tc Common source 1000 Vth (V) (pF) 2.0 VDS = 10 V ID = 1 mA 500 300 Ciss Capacitance C Gate threshold voltage 100 1.5 100 50 Common source 30 VGS = 0 V f = 1 MHz Tc = 25°C 10 0.3 0.5 0.1 Coss 1.0 Crss 0.5 1 3 5 10 30 50 Drain-source voltage VDS (V) 0 −80 −40 0 40 80 120 160 Case temperature Tc (°C) Dynamic Input/Output Characteristics 80 Common source Tc = 25°C 60 ID = 5 A 24 VDS 40 VDD = 48 V VDD = 48 V 8 16 30 IDP max Safe Operating Area VDS (V) VGS (V) 12 12 10 Drain current ID (A) 100 μs* 3 ID max 1 ms* 100 ms* 1 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. 3 10 30 100 300 10 ms* Drain-source voltage 24 20 12 VGS 4 Gate-source voltage 0.3 0 0 5 10 15 0 20 0.1 1 Total gate charge Qg (nC) Drain-source voltage VDS (V) 5 2006-10-27 MP4210 rth – tw Transient thermal resistance rth (°C/W) 300 Curves should be applied in thermal limited area. (Single nonrepetitive pulse) The figure shows thermal resistance per device versus pulse width. (3) (4) 100 (1) (2) 30 10 -No heat sinkAttached on a circuit board(1) 1-device operation (2) 2-device operation (3) 3-device operation Circuit board (4) 4-device operation 0.01 0.1 1 10 100 1000 3 1 0.5 0.001 Pulse width tw (s) PDT – Ta 8 (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation Attached on a circuit board 200 EAS – Tch (W) Avalanche energy EAS (mJ) 160 PDT 6 Total power dissipation 120 4 (4) (3) (2) Circuit board 80 2 (1) 40 0 0 40 80 120 160 200 0 25 50 75 100 125 150 Ambient temperature Ta (°C) Channel temperature Tch (°C) ΔTch – PDT 160 ΔTch (°C) (1) 120 (2) (3) (4) Channel temperature increase 15 V 80 Circuit board Attached on a circuit board 40 (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation 1 2 3 4 5 BVDSS IAR VDD VDS −15 V TEST CIRCUIT Peak IAR = 5 A, RG = 25 Ω VDD = 25 V, L = 7 mH TEST WAVE FORM ⎞ 1 2⎛ B VDSS ⎟ Ε AS = ·L·I · ⎜ ⎜B 2 − VDD ⎟ ⎝ VDSS ⎠ 0 0 Total power dissipation PDT (W) 6 2006-10-27 MP4210 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-10-27