MP6901

MP6901 TOSHIBA Power Transistor Module Silicon Epitaxial Type (Six Darlington Power Transistors in One) MP6901 High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching Industrial Applications Unit: mm • • • • Package with heat sink isolated to lead (SIP 12 pins) High collector power dissipation (6-device operation) : PT = 5 W (Ta = 25°C) High collector current: IC (DC) = ±4 A (max) High DC current gain: hFE = 2000 (min) (VCE = ±2 V, IC = ±1 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current Collector power dissipation (1-device operation) Collector power dissipation (6-device operation) Isolation voltage Junction temperature Storage temperature range Ta = 25°C PT Tc = 25°C VIsol Tj Tstg 25 1000 150 −55 to 150 V °C °C Symbol VCBO VCEO VEBO IC ICP IB PC Rating NPN 100 80 5 4 6 0.4 3.0 5.0 W PNP −100 −80 −5 −4 −6 −0.4 Unit V V V A A W JEDEC JEITA TOSHIBA ― ― 2-32B1D Weight: 6.0 g (typ.) Array Configuration R1 R2 4 7 3 10 6 9 12 2 R1 R2 1 4 8 11 R1 ≈ 4.5 kΩ, R2 ≈ 300 Ω 1 2004-07-01 MP6901 Marking MP6901 JAPAN Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Thermal Characteristics Characteristics Thermal resistance from junction to ambient (6-device operation, Ta = 25°C) Thermal resistance from junction to case (6device operation, Tc = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) TL 260 °C ΣRth (j-c) 5.0 °C/W Symbol Max Unit ΣRth (j-a) 25 °C/W Electrical Characteristics (Ta = 25°C) (NPN transistor) Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter Base-emitter Symbol ICBO ICEO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton Input Switching time 20 μ s Storage time tstg IB1 IB2 Test Condition VCB = 100 V, IE = 0 A VCE = 80 V, IB = 0 A VEB = 5 V, IC = 0 A IC = 1 mA, IE = 0 A IC = 10 mA, IB = 0 A VCE = 2 V, IC = 1 A VCE = 2 V, IC = 3 A IC = 3 mA, IB = 6 mA IC = 3 mA, IB = 6 mA VCE = 2 V, IC = 0.5 A VCB = 10 V, IE = 0 A, f = 1 MHz Output 10 Ω Min ― ― 0.5 100 80 2000 1000 ― ― ― ― ― Typ. ― ― ― ― ― ― ― ― ― 60 35 0.2 Max 20 20 2.5 ― ― ― ― 1.5 2.0 ― ― ― Unit μA μA mA V V ― Saturation voltage V MHz pF Transition frequency Collector output capacitance Turn-on time IB1 IB2 ― 1.5 ― μs VCC = 30 V ― 0.6 ― Fall time tf IB1 = −IB2 = 6 mA, duty cycle ≤ 1% 2 2004-07-01 MP6901 Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C) Characteristics Forward current Surge current Forward voltage Reverse recovery time Reverse recovery charge Symbol IFM IFSM VF trr Qrr t = 1 s, 1 shot IF = 1 A , IB = 0 A IF = 4 A, VBE = −3 V, dIF/dt = −50 A/μs Test Condition ― Min ― ― ― ― ― Typ. ― ― ― 1.0 8 Max 4 6 2.0 ― ― Unit A A V μs μC Electrical Characteristics (Ta = 25°C) (PNP transistor) Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter Base-emitter Symbol ICBO ICEO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton IB1 Input 20 μs IB2 IB1 Test Condition VCB = −100 V, IE = 0 A VCE = −80 V, IB = 0 A VEB = −5 V, IC = 0 A IC = −1 mA, IE = 0 A IC = −10 mA, IB = 0 A VCE = −2 V, IC = −1 A VCE = −2 V, IC = −3 A IC = −3 A, IB = −6 mA IC = −3 A, IB = −6 mA VCE = −2 V, IC = −0.5 A VCB = −10 V, IE = 0 A, f = 1 MHz Min ― ― −0.5 −100 −80 2000 1000 ― ― ― ― ― Typ. ― ― ― ― ― ― ― ― ― 40 60 0.15 Max −20 −20 −2.5 ― ― ― ― −1.5 −2.0 ― ― ― Unit μA μA mA V V ― Saturation voltage V MHz pF Transition frequency Collector output capacitance Turn-on time Output 10 Ω Switching time Storage time tstg ― 0.80 ― μs VCC = −30 V Fall time tf −IB1 = IB2 = 6 mA, duty cycle ≤ 1% ― 0.40 ― Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C) Characteristics Forward current Surge current Forward voltage Reverse recovery time Reverse recovery charge Symbol IFM IFSM VF trr Qrr t = 1 s, 1 shot IF = 1 A , IB = 0 A IF = 4 A, VBE = 3 V, dIF/dt = −50 A/μs Test Condition ― Min ― ― ― ― ― Typ. ― ― ― 1.0 8 Max 4 6 2.0 ― ― Unit A A V μs μC 3 2004-07-01 MP6901 (NPN transistor) IC – VCE 6 Common 5 emitter Tc = 25°C 5 1 0.5 6 Common emitter 5 VCE = 2 V IC – VBE (A) Collector current IC 3 Collector current IC 4 (A) 0.3 4 0.23 3 2 IB = 0.2 mA 2 Tc = 100°C 25 1 0 0 0 1 2 3 4 5 6 7 1 −55 0 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) hFE – IC 20000 10000 VCE = 2 V 2.4 Common emitter VCE – IB VCE (V) 2.0 5 1.6 3 1.2 1 0.8 0.3 0.4 Common emitter Tc = 25°C 0 0.1 0.3 1 3 10 30 100 300 2 4 IC = 6 A DC current gain hFE 5000 3000 Tc = 100°C 25 1000 500 300 0.05 0.1 0.3 −55 0.5 1 3 5 10 Collector current IC (A) Collector-emitter voltage Base current IB (mA) VCE (sat) – IC 10 10 Common emitter 5 3 IC/IB = 500 VBE (sat) – IC Base-emitter saturation voltage VBE (sat) (V) Common emitter 5 3 Tc = −55°C 25 1 100 IC/IB = 500 Collector-emitter saturation voltage VCE (sat) (V) 1 25 0.5 0.3 0.1 Tc = −55°C 100 0.5 0.3 0.1 0.3 0.5 1 3 5 10 0.3 0.5 1 3 5 10 Collector current IC (A) Collector current IC (A) 4 2004-07-01 MP6901 (PNP transistor) IC – VCE −6 Common −5 emitter Tc = 25°C −0.5 −0.4 −1.5 −1.0 −6 −0.7 Common emitter −5 VCE = −2 V IC – VBE (A) (A) Collector current IC −4 −3 Collector current IC −4 −3 −0.3 −2 IB = −0.2 mA −2 Tc = 100°C −1 0 −1 −2 −3 −4 −5 −6 −7 −1 25 −55 0 0 0 0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −2.8 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) hFE – IC 20000 −2.4 Common emitter 10000 VCE = −2 V VCE – IB VCE (V) −2.0 DC current gain hFE 5000 3000 Tc = 100°C 25 −55 1000 500 300 −0.05 −0.1 −0.3 −0.5 −1 −3 −5 −10 −1.6 −4 −1.2 −1 −0.8 −0.3 −0.4 −2 −3 −5 IC = −6 A Collector-emitter voltage Common emitter 0 −0.1 Tc = 25°C −0.3 −1 −3 −10 −30 −100 −300 Collector current IC (A) ) Base current IB (mA) VCE (sat) – IC −10 −10 Common emitter VBE (sat) – IC Common emitter IC/IB = 500 Collector-emitter saturation voltage VCE (sat) (V) −5 −3 IC/IB = 500 Base-emitter saturation voltage VBE (sat) (V) −5 −3 Tc = −55°C 25 −1 100 −1 25 −0.5 −0.3 −0.1 Tc = −55°C 100 −0.5 −0.3 −0.1 −0.3 −0.5 −1 −3 −5 −10 −0.3 −0.5 −1 −3 −5 −10 Collector current IC (A) Collector current IC (A) 5 2004-07-01 MP6901 Safe Operating Area (NPN Tr) 10 5 3 10 ms 1 ms 100 μs IC max (pulsed)* −10 −5 −3 Safe Operating Area (PNP Tr) IC max (pulsed)* 10 ms 1 ms 100 μs (A) (A) Collector current IC VCEO max 1 0.5 0.3 −1 −0.5 −0.3 Collector current IC 0.1 0.05 0.03 *: Single nonrepetitive pulse Tc = 25°C 0.01 0.5 Curves must be derated linearly with increase in temperature. 1 3 10 −0.1 −0.05 −0.03 *: Single nonrepetitive pulse Tc = 25°C −0.01 −0.5 Curves must be derated linearly with increase in temperature. −1 −3 −10 VCEO max 30 100 300 −30 −100 −300 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) rth – tw 300 Transient thermal resistance rth (°C/W) Curves should be applied in thermal 100 limited area. (Single nonrepetitive pulse) The figure shows thermal resistance per device versus pulse width. (3) (2) (1) 10 30 3 NPN 1 PNP -No heat sink/Attached on a circuit board(1) 1-device operation (2) 3-device operation (3) 6-device operation Circuit board 100 1000 0.3 0.001 0.01 0.1 1 10 Pulse width tw (s) ΔTj – PT Junction temperature increase ΔTj (°C) (1) 120 (2) (3) PT – Ta (1) 1-device operation (2) 3-device operation (3) 8-device operation Attached on a circuit board PT (W) 6 (3) Total power dissipation 80 4 (2) Circuit board (1) 2 40 Circuit board Attached on a circuit board (1) 1-device operation (2) 3-device operation (3) 6-device operation 0 0 2 4 6 8 10 0 0 40 80 120 160 200 Total power dissipation PT (W) Ambient temperature Ta (°C) 6 2004-07-01 MP6901 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2004-07-01