RN2115,LF(CT

RN2114 RN2118 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2114, RN2115, RN2116, RN2117, RN2118 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Built-in bias resistors Simplified circuit design Fewer parts and simplified manufacturing process Complementary to RN1107 to RN1109 Equivalent Circuit and Bias Resistor Values Type No. R1 (k ) R2 (k ) RN2114 1 10 RN2115 2.2 10 RN2116 4.7 10 RN2117 10 4.7 RN2118 47 10 JEDEC JEITA TOSHIBA 2 2H1A Weight: 2.4mg (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol RN2114 to 2118 Junction temperature Storage temperature range 50 V VCEO 50 V 5 RN2115 6 RN2116 VEBO 7 RN2117 15 RN2118 25 RN2114 to 2118 Unit VCBO RN2114 Collector current Collector power dissipation Rating V IC 100 mA PC 100 mW Tj 150 C Tstg 55 to 150 C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1994-08 1 2014-03-01 RN2114 RN2118 Electrical Characteristics (Ta = 25 C) Characteristic Collector cut-off current Emitter cut-off current DC current gain Symbol Test Circuit Test Condition 100 nA RN2114 to 2118 ICEO VCE = 50 V, IB = 0 500 nA RN2114 VEB = 5 V, IC = 0 0.35 0.65 RN2115 VEB = 6 V, IC = 0 0.37 0.71 VEB = 7 V, IC = 0 0.36 0.68 RN2117 VEB = 15 V, IC = 0 0.78 1.46 RN2118 VEB = 25 V, IC = 0 0.33 0.63 RN2116 RN2114 to 2116 RN2118 IEBO hFE VCE = 5 V, IC = 10 mA RN2114 to 2118 IC = 5 mA, IB = 0.25 mA VCE (sat) 0.1 0.3 2.0 0.6 2.5 0.7 2.5 RN2117 1.5 3.5 RN2118 2.5 10.0 RN2114 0.3 0.9 RN2115 0.3 1.0 0.3 1.1 RN2117 0.3 3.0 RN2118 0.5 5.7 RN2116 VI (ON) VCE = 0.2 V, IC = 5 mA VI (OFF) RN2114 to 2118 fT Collector Output capacitance RN2114 to 2118 Cob VCE = 5 V, IC = 0.1 mA VCE = 10 V, IC = 5 mA 200 VCB = 10 V, IE = 0, f = 1 MHz 3.0 6.0 0.7 1.0 1.3 1.54 2.2 2.86 3.29 4.7 6.11 RN2117 7.0 10.0 13.0 RN2118 32.9 47.0 61.1 RN2114 RN2115 Resistor ratio 50 0.5 RN2116 RN2116 R1 RN2114 0.1 RN2115 0.22 RN2116 mA 30 Transition frequency Input resistor Unit VCB = 50 V, IE = 0 RN2115 Input voltage (OFF) Max ICBO RN2114 Input voltage (ON) Typ. RN2114 to 2118 RN2117 Collector-emitter saturation voltage Min R1/R2 V V V MHz pF k 0.47 RN2117 2.13 RN2118 4.7 2 2014-03-01 RN2114 RN2118 IC - VI (ON) RN2114 -100 -100 IC - VI (ON) RN2115 COMMON EMITTER VCE = -0.2 V COMMON EMITTER VCE = -0.2 V -10 -10 Ta = 100°C Ta = 100°C 25 -1 25 -1 -25 -25 -0.1 -0.1 -1 -0.1 -0.1 -10 -1 INPUT VOLTAGE VI (ON) (V) -100 RN2116 IC - VI (ON) -100 IC - VI (ON) RN2117 COMMON EMITTER VCE = -0.2 V COMMON EMITTER VCE = -0.2 V -10 -10 Ta = 100°C Ta = 100°C 25 25 -1 -1 -25 -25 -0.1 -0.1 -100 -10 INPUT VOLTAGE VI (ON) (V) -1 INPUT VOLTAGE VI (ON) (V) RN2118 -0.1 -0.1 -10 -1 -10 INPUT VOLTAGE VI (ON) (V) -100 IC - VI(ON) COMMON EMITTER VCE = -0.2 V -10 Ta = 100°C -1 25 -25 -0.1 -0.1 -1 -10 INPUT VOLTAGE VI (ON) (V) -100 3 2014-03-01 RN2114 RN2118 -10000 IC - VI (OFF) RN2114 -10000 COMMON EMITTER VCE = -5 V COMMON EMITTER VCE = -5 V -1000 -1000 25 Ta = 100°C Ta = 100°C -25 -100 -25 -10 -0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -0 -0.2 INPUT VOLTAGE VI (OFF) (V) IC - VI (OFF) RN2116 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 INPUT VOLTAGE VI (OFF) (V) -10000 RN2117 COMMON EMITTER VCE = -5 V IC - VI (OFF) COMMON EMITTER VCE = -5 V -1000 -1000 Ta = 100°C 25 Ta = 100°C -25 -100 25 -25 -100 -10 -0.2 -10000 25 -100 -10 -10000 IC - VI (OFF) RN2115 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 INPUT VOLTAGE VI (OFF) (V) -10 -0.8 -1.8 -1.2 -1.6 -2 -2.4 -2.8 INPUT VOLTAGE VI (OFF) (V) -3.2 IC - VI (OFF) RN2118 COMMON EMITTER VCE = -5 V -1000 Ta = 100°C 25 -25 -100 -10 -1 -2 -3 -4 -5 -6 INPUT VOLTAGE VI (OFF) (V) 4 2014-03-01 RN2114 RN2118 1000 hFE - IC RN2114 1000 hFE - IC RN2115 COMMON EMITTER VCE = -5 V COMMON EMITTER VCE = -5 V Ta = 100°C 100 Ta = 100°C 100 25 -25 -25 10 10 -1 -10 -100 -1 COLLECTOR CURRENT IC (mA) 1000 25 hFE - IC RN2116 -10 -100 COLLECTOR CURRENT IC (mA) 1000 hFE - IC RN2117 COMMON EMITTER VCE = -5 V COMMON EMITTER VCE = -5 V 100 Ta = 100°C Ta = 100°C 100 25 -25 10 25 -25 10 1 -1 -10 -100 -1 COLLECTOR CURRENT IC (mA) 1000 RN2118 -10 -100 COLLECTOR CURRENT IC (mA) hFE - IC COMMON EMITTER VCE = -5 V Ta = 100°C 100 25 -25 10 -1 -10 -100 COLLECTOR CURRENT IC (mA) 5 2014-03-01 RN2114 RN2118 RN2114 -1 VCE(sat) - IC -1 RN2115 COMMON EMITTER IC / IB = 20 COMMON EMITTER IC / IB = 20 Ta = 100°C Ta = 100°C -0.1 -0.1 25 -25 -25 -0.01 -10 COLLECTOR CURRENT IC (mA) RN2116 -100 -1 VCE(sat) - IC -1 -10 COLLECTOR CURRENT IC (mA) RN2117 COMMON EMITTER IC / IB = 20 -100 VCE(sat) - IC COMMON EMITTER IC / IB = 20 Ta = 100°C Ta = 100°C -0.1 -0.1 -25 25 -25 -0.01 25 -0.01 -1 -1 25 -0.01 -1 -1 VCE(sat) - IC -10 COLLECTOR CURRENT IC (mA) RN2118 -100 -1 -10 COLLECTOR CURRENT IC (mA) -100 VCE(sat) - IC COMMON EMITTER IC / IB = 20 Ta = 100°C -0.1 -25 25 -0.01 -1 -10 COLLECTOR CURRENT IC (mA) -100 6 2014-03-01 RN2114 RN2118 7 2014-03-01 RN2114 RN2118 RESTRICTIONS ON PRODUCT USE Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. 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