SSM3H137TU,LF

SSM3H137TU MOSFETs Silicon N-Channel MOS SSM3H137TU 1. Applications • Relay Drivers 2. Features (1) AEC-Q101 (Rev. D) qualified. (Note 1) (2) 4.0-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 295 mΩ (max) (@VGS = 4.0 V, ID = 0.5 A) RDS(ON) = 280 mΩ (max) (@VGS = 4.5 V, ID = 1.0 A) RDS(ON) = 240 mΩ (max) (@VGS = 10 V, ID = 1.0 A) Note 1: For detail information, Please contact to our sales. 3. Packaging and Pin Assignment 1: Gate 2: Source 3: Drain UFM Start of commercial production ©2016 Toshiba Corporation 1 2016-03 2016-03-25 Rev.1.0 SSM3H137TU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit V Drain-source voltage VDSS 34 Gate-source voltage VGSS ±20 Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation (t = 1 s) (Note 1) ID 2 (Note 1), (Note 2) IDP 6 (Note 3) PD (Note 3) Channel temperature Single-pulse avalanche energy (Note 4) A 800 mW 1000 Tch 150  EAS 3.5 mJ Avalanche current IAR 2.0 A Storage temperature Tstg -55 to 150  Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Pulse width (PW) ≤ 10 µs, duty ≤ 1% Note 3: Device mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm ,Cu pad: 645 mm2) Note 4: VDD = 25 V, Starting Tch = 25 , L = 0.5 mH Note: Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. The channel-to-ambient thermal resistance, Rth(ch-a), and the drain power dissipation, PD, vary according to the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. ©2016 Toshiba Corporation 2 2016-03-25 Rev.1.0 SSM3H137TU 5. Electrical Characteristics 5.1. Static Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Drain-source breakdown voltage Test Condition V(BR)DSS ID = 1 mA, VGS = 0 V Min Typ. Max Unit 34  37 V µA Drain cut-off current IDSS VDS = 30.4 V, VGS = 0V   10 Gate leakage current IGSS VGS = ±16 V, VDS = 0V   ±10 Vth VDS = 10 V, ID = 1 mA Gate threshold voltage (Note 1) Drain-source on-resistance (Note 2) Forward transfer admittance (Note 2) 0.7  1.7 V RDS(ON) VGS = 4.0 V, ID = 0.5 A  230 295 mΩ VGS = 4.5 V, ID = 1.0 A  220 280 VGS = 10 V, ID = 1.0 A  200 240 VDS = 10 V, ID = 0.5 A  2.2  |Yfs| S Note 1: Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for this device). Then, for normal switching operation, VGS(ON) must be higher than Vth, and VGS(OFF) must be lower than Vth. This relationship can be expressed as: VGS(OFF) < Vth < VGS(ON). Take this into consideration when using the device. Note 2: Pulse measurement. 5.2. Dynamic Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Switching time (turn-on time) ton Switching time (turn-off time) toff Test Condition VDS = 10 V, VGS = 0 V, f = 1 MHz VDD = 20 V, ID = 0.5 A, VGS = 0 to 4.5 V, RG = 10 Ω Duty ≤ 1%, VIN: tr, tf < 5 ns, Common source, See Chapter 5.3. Min Typ. Max Unit  119  pF  8   40   320   800  ns 5.3. Switching Time Test Circuit Fig. 5.3.1 Switching Time Test Circuit Fig. 5.3.2 Input Waveform/Output Waveform 5.4. Gate Charge Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Total gate charge (gate-source plus gate-drain) Symbol Qg Gate-source charge 1 Qgs1 Gate-drain charge Qgd ©2016 Toshiba Corporation Test Condition VDD = 20 V, ID = 1.0 A, VGS = 10 V 3 Min Typ. Max Unit  3.0  nC  0.8   0.4  2016-03-25 Rev.1.0 SSM3H137TU 5.5. Source-Drain Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Diode forward voltage Symbol (Note 1) VDSF Test Condition ID = -2.0 A, VGS = 0 V Min Typ. Max Unit  -0.82 -1.2 V Note 1: Pulse measurement. 6. Marking Fig. 6.1 Marking ©2016 Toshiba Corporation 4 2016-03-25 Rev.1.0 SSM3H137TU 7. Characteristics Curves (Note) Fig. 7.1 ID - VDS Fig. 7.2 ID - VGS Fig. 7.3 RDS(ON) - VGS Fig. 7.4 RDS(ON) - ID Fig. 7.5 RDS(ON) - Ta Fig. 7.6 Vth - Ta ©2016 Toshiba Corporation 5 2016-03-25 Rev.1.0 SSM3H137TU Fig. 7.7 |Yfs| - ID Fig. 7.8 IDR - VDS Fig. 7.9 C - VDS Fig. 7.10 Dynamic Input Characteristics Fig. 7.11 rth - tw (MOSFET) Fig. 7.12 Safe Operating Area ©2016 Toshiba Corporation 6 2016-03-25 Rev.1.0 SSM3H137TU Fig. 7.13 rth - tw (Zener) Note: Fig. 7.14 PZSM - t The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. ©2016 Toshiba Corporation 7 2016-03-25 Rev.1.0 SSM3H137TU Package Dimensions Unit: mm Weight: 6.6 mg (typ.) Package Name(s) Nickname: UFM ©2016 Toshiba Corporation 8 2016-03-25 Rev.1.0 SSM3H137TU RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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