SSM3J377R,LF

SSM3J377R MOSFETs Silicon P-Channel MOS (U-MOS�) SSM3J377R 1. Applications • Power Management Switches 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.5-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 240 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 168 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 123 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 93 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Configuration 1. Gate 2. Source 3. Drain SOT-23F 4. Orderable part number Orderable part number SSM3J377R,LF AEC-Q101 Note � SSM3J377R,LXGF YES SSM3J377R,LXHF YES General Use (Note 1) Unintended Use (Note 1) Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. ©2017-2021 Toshiba Electronic Devices & Storage Corporation 1 2021-01-15 Rev.2.0 SSM3J377R 5. Absolute Maximum Ratings (Note) (Unless otherwise specified, T a = 25�) Characteristics Symbol Rating Unit V Drain-source voltage VDSS -20 Gate-source voltage VGSS -8/+6 Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation (t = 10 s) (Note 1) ID -3.9 (Note 1,2) IDP -7.8 (Note 3) PD 1 W (Note 3) PD 2 W � Channel temperature Tch 150 Storage temperature Tstg -55 to 150 A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150�. Note 2: Pulse width (PW) ≤ 10 ms, duty ≤ 1% Note 3: Device mounted on a FR4 board.(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm2) Note: Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. The channel-to-ambient thermal resistance, Rth(ch-a), and the power dissipation, PD, vary according to the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. ©2017-2021 Toshiba Electronic Devices & Storage Corporation 2 2021-01-15 Rev.2.0 SSM3J377R 6. Electrical Characteristics 6.1. Static Characteristics (T a = 25� unless otherwise specified) Characteristics Symbol Gate leakage current Drain cut-off current Test Condition IGSS VGS = -8/+6 V, VDS = 0 V IDSS VDS = -20 V, VGS = 0 V Typ. Max Unit � � ±1 µA � � -1 -20 � � (Note 1) V(BR)DSX ID = -1 mA, VGS = 5 V -15 � � (Note 2) -0.3 � -1.0 RDS(ON) ID = -1.5 A, VGS = -4.5 V � 78.5 93 ID = -1.0 A, VGS = -2.5 V � 97.5 123 ID = -0.5 A, VGS = -1.8 V � 120 168 ID = -0.25 A, VGS = -1.5 V � 141 240 VDS = -3 V, ID = -1.0 A 2.8 5.6 � Drain-source breakdown voltage V(BR)DSS ID = -1 mA, VGS = 0 V Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance (Note 3) Forward transfer admittance Min (Note 3) Vth |Yfs| VDS = -3 V, ID = -1 mA V mΩ S Note 1: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode. Note 2: Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (-1 mA for this device). Then, for normal switching operation, VGS(ON) must be higher than Vth, and VGS(OFF) must be lower than Vth. This relationship can be expressed as: VGS(OFF) < Vth < VGS(ON). Take this into consideration when using the device. Note 3: Pulse measurement. 6.2. Dynamic Characteristics (T a = 25� unless otherwise specified) Characteristics Symbol Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Switching time (turn-on time) ton Switching time (turn-off time) toff Test Condition VDS = -10 V, VGS = 0 V, f = 1 MHz VDD = -10 V, ID = -0.5 A VGS = 0 to -2.5 V, RG = 4.7 Ω, Duty ≤ 1%, Input: tr, tf < 5 ns Common source, See Chapter 5.3 Min Typ. Max Unit � 290 � pF � 32 � � 44 � � 12.0 � � 46.2 � ns 6.3. Switching Time Test Circuit Fig. 6.3.1 Test Circuit of Switching Time ©2017-2021 Toshiba Electronic Devices & Storage Corporation Fig. 6.3.2 3 Input Waveform/Output Waveform 2021-01-15 Rev.2.0 SSM3J377R 6.4. Gate Charge Characteristics (T a = 25� unless otherwise specified) Characteristics Symbol Total gate charge (gate-source plus gate-drain) Qg Gate-source charge 1 Qgs1 Gate-drain charge Qgd Test Condition VDD = -10 V, VGS = -4.5 V, ID = -3.9 A Min Typ. Max Unit � 4.6 � nC � 3.4 � � 1.2 � 6.5. Source-Drain Characteristics (T a = 25� unless otherwise specified) Characteristics Diode forward voltage Symbol (Note 1) VDSF Test Condition ID = 3.9 A, VGS = 0 V Min Typ. Max Unit � 0.97 1.2 V Note 1: Pulse measurement. 7. Marking Fig. 7.1 ©2017-2021 Toshiba Electronic Devices & Storage Corporation 4 Marking 2021-01-15 Rev.2.0 SSM3J377R 8. Characteristics Curves (Note) Fig. 8.1 Fig. 8.3 Fig. 8.5 I D - V DS Fig. 8.2 R DS(ON) - V GS Fig. 8.4 R DS(ON) - T a ©2017-2021 Toshiba Electronic Devices & Storage Corporation I D - V GS R DS(ON) - I D Fig. 8.6 5 V th - T a 2021-01-15 Rev.2.0 SSM3J377R Fig. 8.11 Fig. 8.7 |Y fs | - I D Fig. 8.9 C - V DS Fig. 8.8 Fig. 8.10 Dynamic Input/Output Characteristics ©2017-2021 Toshiba Electronic Devices & Storage Corporation I DR - V DS 6 Fig. 8.12 t - ID r th - t w 2021-01-15 Rev.2.0 SSM3J377R Fig. 8.13 Note: PD - Ta The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. ©2017-2021 Toshiba Electronic Devices & Storage Corporation 7 2021-01-15 Rev.2.0 SSM3J377R Package Dimensions Unit: mm Weight: 0.011 g (typ.) Package Name(s) TOSHIBA: 2-3Z1S Nickname: SOT-23F ©2017-2021 Toshiba Electronic Devices & Storage Corporation 8 2021-01-15 Rev.2.0 SSM3J377R RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". Hardware, software and systems described in this document are collectively referred to as "Product". • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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