SSM3K15F,LF

SSM3K15F TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K15F High Speed Switching Applications Analog Switch Applications Unit: mm +0.5 2.5-0.3 2.9±0.2 : Ron = 4.0 Ω (max) (@VGS = 4 V) : Ron = 7.0 Ω (max) (@VGS = 2.5 V) +0.1 0.4-0.05 Low on resistance 1 2 3 +0.2 1.1-0.1 Symbol Rating Unit Drain-source voltage VDS 30 V Gate-source voltage VGSS ±20 V DC ID 100 Pulse IDP 200 Drain power dissipation (Ta = 25°C) PD 200 mW Channel temperature Tch 150 °C JEDEC Storage temperature Tstg −55 to 150 °C JEITA Drain current Note: 0~0.1 Characteristics 0.3 Absolute Maximum Ratings (Ta = 25°C) +0.1 0.16-0.06 • +0.25 1.5-0.15 1.9 Small package 0.95 0.95 • mA S-MINI 1.Gate 2.Source 3.Drain TO-236MOD SC-59 TOSHIBA 2-3F1F Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.012 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Equivalent Circuit 3 3 DP 1 2 1 2 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Start of commercial production 2001-02 1 2014-03-01 SSM3K15F Electrical Characteristics (Ta = 25°C) Characteristics Symbol Gate leakage current Drain-source breakdown voltage Drain cut-off current Test Condition Min Typ. Max Unit IGSS VGS = ±16 V, VDS = 0 ⎯ ⎯ ±1 μA V(BR) DSS ID = 0.1 mA, VGS = 0 30 ⎯ ⎯ V IDSS VDS = 30 V, VGS = 0 ⎯ ⎯ 1 μA Vth VDS = 3 V, ID = 0.1 mA 0.8 ⎯ 1.5 V Forward transfer admittance ⏐Yfs⏐ VDS = 3 V, ID = 10 mA 25 ⎯ ⎯ mS Drain-source ON resistance RDS (ON) ID = 10 mA, VGS = 4 V ⎯ 2.2 4.0 ID = 10 mA, VGS = 2.5 V ⎯ 4.0 7.0 Gate threshold voltage Ω Input capacitance Ciss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 7.8 ⎯ pF Reverse transfer capacitance Crss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 3.6 ⎯ pF Output capacitance Coss VDS = 3 V, VGS = 0, f = 1 MHz ⎯ 8.8 ⎯ pF VDD = 5 V, ID = 10 mA, VGS = 0 to 5 V ⎯ 50 ⎯ ⎯ 180 ⎯ Switching time Turn-on time ton Turn-off time toff ns Switching Time Test Circuit (a) Test circuit 5V (b) VIN Output 5V RL 0V 90% Input 50 Ω 0 10 μs VDD (c) VOUT VDD = 5 V D.U. ≤ 1% Input: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C 10% VDD 10% 90% VDS (ON) tr ton tf toff Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. 2 2014-03-01 SSM3K15F ID – VDS ID – VGS 250 1000 Common Source 4 Common Source Ta = 25°C 3 VDS = 3 V 100 Drain current ID (mA) Drain current ID (mA) 200 10 2.7 150 2.5 100 2.3 50 Ta = 100°C 10 −25°C 25°C 1 0.1 VGS = 2.1 V 0 0 0.5 1 1.5 Drain-Source voltage 0.01 0 2 1 VDS (V) 2 3 Gate-Source voltage RDS (ON) – ID VGS (V) RDS (ON) – VGS 10 6 Common Source Common Source ID = 10 mA 5 8 Drain-Source on resistance RDS (ON) (Ω) Drain-Source on resistance RDS (ON) (Ω) Ta = 25°C 6 VGS = 2.5 V 4 4V 2 4 Ta = 100°C 3 25°C 2 −25°C 1 0 0 40 80 120 160 0 0 200 2 Drain current ID (mA) 4 Common Source ID = 10 mA Vth (V) 1.8 6 5 VGS = 2.5 V 4 3 4V 2 1 0 −25 8 10 VGS (V) Vth – Ta 2 Gate threshold voltage Drain-Source on resistance RDS (ON) (Ω) 7 6 Gate-source voltage RDS (ON) – Ta 8 4 1.6 Common Source ID = 0.1 mA VDS = 3 V 1.4 1.2 1 0.8 0.6 0.4 0.2 0 25 50 75 100 125 0 −25 150 Ambient temperature Ta (°C) 0 25 50 75 100 125 150 Ambient temperature Ta (°C) 3 2014-03-01 SSM3K15F ⎪Yfs⎪ – ID IDR – VDS 1000 250 (mA) Drain reveres current IDR Forward transfer admittance ⏐Yfs⏐ (mS) Common Source 500 V DS = 3 V 300 Ta = 25°C 100 50 30 10 5 3 1 1 10 100 200 Common Source VGS = 0 V Ta = 25°C D 150 S 100 50 0 0 1000 IDR G −0.2 Drain current ID (mA) −0.4 −0.6 Drain-Source voltage t – ID toff 3000 tf 500 300 100 10 0.1 ton toff 1000 500 tf 300 ton 100 tr 50 30 tr 1 10 10 0.1 100 1 Drain current ID (mA) 10 PD – Ta Drain power dissipation PD (mW) (pF) 30 Capacitance C 250 Common Source VGS = 0 V f = 1 MHz Ta = 25°C 50 10 Ciss Coss 5 3 Crss 1 0.5 0.3 1 Drain-Source voltage 100 Drain current ID (mA) C – VDS 100 0.1 0.1 −1.4 Common Source VDD = 3 V VGS = 0~2.5 V Ta = 25°C 5000 Switching time t (ns) Switching time t (ns) 3000 30 −1.2 VDS (V) 10000 Common Source VDD = 5 V VGS = 0~5 V Ta = 25°C 5000 50 −1 t – ID 10000 1000 −0.8 10 200 150 100 50 0 0 100 VDS (V) 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 4 2014-03-01 SSM3K15F RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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