SSM5H03TU

SSM5H03TU Silicon N Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5H03TU DC-DC Converter • • Combined Nch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Unit: mm Absolute Maximum Ratings (Ta = 25°C) MOSFET Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) t = 10s Tch Rating 12 ±12 1.4 2.8 0.5 0.8 150 Unit V V A Drain power dissipation Channel temperature W °C UFV DIODE Absolute Maximum Ratings (Ta = 25°C) SCHOTTKY Characteristics Maximum (peak) reverse voltage Reverse voltage Average forward current Peak one cycle surge forward current (non-repetitive) Junction temperature Symbol VRM VR IO IFSM Tj Rating 15 12 0.5 2 (50 Hz) 125 Unit V V A A °C JEDEC JEITA TOSHIBA ⎯ ⎯ 2-2R1A Weight: 7 mg (typ.) Absolute Maximum Ratings (Ta = 25°C) MOSFET, DIODE COMMON Characteristics Storage temperature Operating temperature Symbol Tstg Topr (Note 3) Rating −55~125 −40~85 Unit °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu pad: 645 mm2) Note 2: The pulse width limited by max channel temperature. Note 3: Operating temperature limited by max channel temperature and max junction temperature. 1 2007-11-01 SSM5H03TU Marking 5 4 Equivalent Circuit 5 4 KEK 1 2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic discharge. Operators should wear anti-static clothing and use containers and other objects that are made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area. When using this device, please take heat dissipation fully into account. 2 2007-11-01 SSM5H03TU MOSFET Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain-Source breakdown voltage Drain Cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS V (BR) DSX IDSS Vth |Yfs| RDS (ON) Ciss Crss Coss ton toff Test Condition VGS = ±10 V, VDS = 0 ID = 1 mA, VGS = 0 ID = 1 mA, VGS = -8 V VDS = 12 V, VGS = 0 VDS = 5 V, ID = 0.1 mA VDS = 5 V, ID = 0.7 A ID = 0.7 A, VGS = 10 V ID = 0.7 A, VGS = 4 V (Note 4) (Note 4) (Note 4) Min ⎯ 12 4 ⎯ 1.0 0.8 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 1.6 120 210 125 40 60 16 10 Max ±1 ⎯ ⎯ 1 2.3 ⎯ 150 300 ⎯ ⎯ ⎯ ⎯ ⎯ Unit μA V μA V S mΩ pF pF pF ns VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDS = 10 V, VGS = 0, f = 1 MHz VDD = 10 V, ID = 0.7 A VGS = 0~4 V, RG = 10 Ω Note 4: Pulse measurement Switching Time Test Circuit 4V (a)Test circuit 10 μs 4V 0 ID IN RG RL OUT VDD = 10 V RG = 10 Ω Duty < 1% = VIN: tr, tf < 5 ns Common source Ta = 25°C (b) VIN 0 10% VDD 90% (c) VOUT 90% 10% tr ton toff tf VDS (ON) VDD Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration for using the device. 3 2007-11-01 SSM5H03TU Schottky Diode Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Symbol VF (1) VF (2) IR CT IF = 0.3 A IF = 0.5 A V R = 12 V VR = 0 V, f = 1 MHz Test Condition Min Typ. 0.33 0.37 ⎯ 80 Max 0.39 0.43 100 ⎯ Unit V V μA pF ⎯ ⎯ ⎯ ⎯ Precaution The schottky barrier diode of this product are having large-reverse-current-leakage characteristic compare to the other switching diodes. This current leakage and not proper operating temperature or voltage may cause thermal runaway. Please take forward and reverse loss into consideration when you design. 4 2007-11-01 SSM5H03TU MOSFET Electrical Characteristics Graph ID – VDS (MOSFET) 3 10V 2.5 3.5V 2 4.0V Common Source Ta = 25°C 1000 10000 Common Source VDS = 5 V ID – VGS (MOSFET) (mA) (A) ID 100 Drain current Drain current 1.5 VGS=3.0V 1 VGS = 2.5 V ID Ta = 85°C 10 25°C 1 −25°C 0.1 0.5 0 0 0.5 1 1.5 2 0.01 0 1 2 3 4 5 Drain-Source voltage VDS (V) Gate-Source voltage VGS (V) RDS (ON) – ID (MOSFET) 0.5 Common Source Ta = 25°C 0.8 RDS (ON) – VGS (MOSFET) Common Source Drain-Source on resistance RDS (ON) (Ω) 0.4 Drain-Source on resistance RDS (ON) (Ω) ID = 0.7 A 0.6 0.3 4V 0.4 25°C 0.2 −25°C 0.2 VGS = 10 V 0.1 Ta = 85°C 0 0 0.5 1 1.5 2 2.5 3 0 0 2 4 6 8 10 12 Drain current ID (A) Gate-Source voltage VGS (V) RDS (ON) – Ta (MOSFET) 0.4 Common Source 3 Vth – Ta (MOSFET) Common Source VDS = 5 V ID = 0.1 mA Drain-Source on resistance RDS (ON) (Ω) 0.3 VGS = 4 V Vth (V) ID = 0.7 A 2.5 2 Gate threshold voltage 0.2 1.5 10 V 0.1 1 0.5 0 −25 0 25 50 75 100 0 −25 0 25 50 75 100 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 5 2007-11-01 SSM5H03TU (S) |Yfs| – ID (MOSFET) 3 1 500 300 C – VDS (MOSFET) ⎪Yfs⎪ (pF) Ciss 100 50 30 Crss 10 5 3 Common Source Ta = 25°C f = 1 MHz VGS = 0 V 1 10 100 Coss Forward transfer admittance 0.3 0.1 0.01 Common Source 0.03 0.001 1 VDS = 5 V Ta = 25°C 10 100 1000 10000 Capacitance C Drain current ID (mA) 1 0.1 Drain-Source voltage VDS (V) Dynamic input characteristic (MOSFET) 10 1000 t – ID (MOSFET) Common Source VDD = 10 V VGS = 0∼4 V Ta = 25°C RG = 10 Ω 100 tf toff (V) 9 VGS 7 6 5 4 3 2 1 0 0 0.5 1 1.5 2 Common Source ID = 1.4 A Ta = 25°C 2.5 3 3.5 VDD = 10 V Gate-Source voltage Switching time t (ns) 10 ton tr 1 0.01 8 Total gate charge Qg (nC) 0.1 1 10 Drain current ID (A) IDR – VDS (MOSFET) 4 Common Source (A) VGS = 0 Ta = 25°C 3 D IDR S IDR Drain reverse current G 2 1 0 0 −0.2 −0.4 −0.6 −0.8 −1 −1.2 Drain-Source voltage VDS (V) 6 2007-11-01 SSM5H03TU Safe operating area (MOSFET) 3 ID max (pulse) ID max (continuous) 1 ms* (A) 1 10 ms* Drain current ID 0.3 DC operation Ta = 25°C 10 s* 0.1 Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2) 0.03 *: Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature 0.01 0.1 1 VDSS max 10 100 Drain-Source voltage VDS (V) PD – Ta (MOSFET) 1.2 (W) Mounted on FR4 board 1 t = 10 s 0.8 (25.4 mm × 25.4 mm × 1.6 t, 2 Cu Pad: 645 mm ) Drain power dissipation PD 0.6 DC 0.4 0.2 0 0 50 100 150 Ambient temperature Ta (°C) 7 2007-11-01 SSM5H03TU SBD Electrical Characteristics Graph IF – VF (SBD) 1000 10 IR – VR (SBD) (mA) (mA) 85 100 75 50 85 1 IR IF 75 Forward current Reverse current 0.1 50 10 Ta = 25°C 0.01 Ta = 25°C 0 1 0 0.001 0 Pulse measurement 3 6 9 12 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Forward voltage VF (V) Reverse voltage VR (V) CT – VR (SBD) 3000 1000 f = 1 MHz Ta = 25°C CT Capacitance (pF) 100 10 1 0.01 0.1 1 10 100 Reverse voltage VR (V) 8 2007-11-01 SSM5H03TU Transient thermal impedance Graph rth – tw (MOSFET) rth (°C/W ) 1000 Single pulse Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) Transient thermal impedance 100 10 1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) rth (°C/W) rth – tw (SBD) 1000 Transient thermal impedance 100 10 1 0.001 Single pulse Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm2) 0.01 0.1 1 10 100 1000 Pulse width tw (s) 9 2007-11-01 SSM5H03TU RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 10 2007-11-01