SSM6J08FU

SSM6J08FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) SSM6J08FU Power Management Switch DC-DC Converter • • • Small Package Low on Resistance : Ron = 0.18 Ω (max) (@VGS = −4 V) : Ron = 0.26 Ω (max) (@VGS = −2.5 V) Low Gate Threshold Voltage Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) Tch Tstg Rating −20 ±12 −1.3 −2.6 300 150 −55~150 Unit V V A mW °C °C Note: JEDEC ― Using continuously under heavy loads (e.g. the application of JEITA ― high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the TOSHIBA 2-2J1D reliability significantly even if the operating conditions (i.e. Weight: 6.8 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm × 6) Fig: 1. Note 2: The pulse width limited by max channel temperature. Marking Equivalent Circuit Fig 1: 25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm2 × 6 6 5 4 6 5 4 0.4 mm 0.8 mm KDD 1 2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2007-11-01 SSM6J08FU Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain-Source breakdown voltage Drain Cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS V (BR) DSX IDSS Vth ⏐Yfs⏐ Test Condition VGS = ±12 V, VDS = 0 ID = −1 mA, VGS = 0 ID = −1 mA, VGS = 12 V VDS = −20 V, VGS = 0 VDS = −3 V, ID = −0.1 mA VDS = −3 V, ID = −0.65 A ID = −0.65 A, VGS = −4 V Drain-Source ON resistance RDS (ON) ID = −0.65 A, VGS = −2.5 V ID = −0.65 A, VGS = −2.0 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Ciss Crss Coss ton toff (Note 3) (Note 3) (Note 3) (Note 3) Min ⎯ −20 −8 ⎯ −0.5 1.3 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 2.7 140 200 260 370 73 116 33 47 Max ±1 ⎯ ⎯ −1 −1.1 ⎯ 180 260 460 ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF ns ns mΩ Unit μA V μA V S VDS = −10 V, VGS = 0, f = 1 MHz VDS = −10 V, VGS = 0, f = 1 MHz VDS = −10 V, VGS = 0, f = 1 MHz VDD = −10 V, ID = −0.65 A, VGS = 0~−2.5 V, RG = 4.7 Ω Note 3: Pulse test Switching Time Test Circuit (a) Test circuit 0 −2.5 V 10 μs VDD = −10 V RG = 4.7 Ω < D.U. = 1% VIN: tr, tf < 5 ns COMMON SOURCE Ta = 25°C ID IN RG VDD −2.5 V OUT (b) VIN 0V 10% 90% (c) VOUT VDS (ON) 90% 10% tr ton tf toff VDD Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = −100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (relationship can be established as follows: VGS (off) < Vth < VGS (on)) Please take this into consideration for using the device. 2 2007-11-01 SSM6J08FU ID – VDS −3.0 −10 −2.5 −4.0 −2.5 Common Source Ta = 25°C −1000 −10000 Common Source VDS = −3 V ID – VGS Drain current ID (mA) (A) 100°C −100 Ta = 25°C −10 −2.0 −2.0 −1.8 Drain current ID −1.5 −1.0 −1.6 VGS = −1.4 V −1 −25°C −0.5 −0.1 0 0 −0.5 −1.0 −1.5 −2.0 −0.01 0 −0.5 −1.0 −1.5 −2.0 −2.5 Drain-Source voltage VDS (V) Gate-Source voltage VGS (V) RDS (ON) – ID 1.0 Common Source Ta = 25°C 0.8 0.8 1.0 RDS (ON) – VGS Common Source ID = −0.65 A Ta = 25°C Drain-Source on resistance RDS (ON) (Ω) Drain-Source on resistance RDS (ON) (Ω) −3.0 0.6 VGS = −2 V 0.4 −2.5 0.2 −4 0 0 −0.5 −1.0 −1.5 −2.0 −2.5 0.6 0.4 0.2 0 0 −2 −4 −6 −8 −10 −12 Drain current ID (A) Gate-Source voltage VGS (V) |Yfs| – ID RDS (ON) – Ta 0.5 Common Source 0.4 VGS = −2 V ID = −0.65 A 10 Drain-Source on resistance RDS (ON) (Ω) Forward transfer admittance |Yfs| (S) 1 0.3 −2.5 0.2 −4 0.1 0.1 Common Source VDS = −3 V Ta = 25°C 0 −25 0 25 50 75 100 125 150 0.01 −0.01 −0.1 −1 −10 Ambient temperature Ta (°C) Drain current ID (A) 3 2007-11-01 SSM6J08FU Vth – Ta −1.0 Common Source 600 C – VDS Common Source 500 VGS = 0 f = 1 MHz Ta = 25°C 400 Ciss Vth (V) −0.8 VDS = −3 V ID = −0.1 mA Gate threshold voltage Capacitance C −0.6 (pF) −0.4 300 200 Coss 100 Crss −0.2 0 −25 0 25 50 75 100 125 150 0 0 −4 −8 −12 −16 −20 Ambient temperature Ta (°C) Drain-Source voltage VDS (V) t – ID 1000 −2.0 Common Source VGS = 0 −1.5 Ta = 25°C IDR – VDS Drain reverse current IDR (A) D IDR S Switching time t (ns) 100 toff tf ton 10 tr Common Source VDD = −10 V VGS = 0~−2.5 V Ta = 25°C 1 −0.01 RG = 4.7 Ω −0.1 −1 −10 G −1.0 −0.5 0 0 0.5 1 Drain-Source voltage VDS (V) Drain current ID (A) Safe operating area Dynamic Input Characteristic −10 Common Source −10 V ID max (pulsed) ID max (continuous) −1 −10 Mounted on FR4 board (25.4 mm × 25.4 mm ×1.6 t 2 Cu pad: 0.32 mm × 6) Fig: 1 10 ms* 100 ms* VGS (V) VDD = −16 V Gate-Source voltage −6 Drain current ID (A) −8 ID = −1.3 A Ta = 25°C DC operation Ta = 25°C −0.1 *: Single nonrepetitive Pulse Ta = 25°C Curves must be derated linearly with increase in temperature. −0.01 −0.1 −1 −10 −4 −2 0 0 VDSS max −100 2 4 6 8 Total gate charge Qg (nC) Drain-Source voltage VDS (V) 4 2007-11-01 SSM6J08FU rth – tw 1000 Transient thermal impedance rth (°C /W) 100 10 Single pulse Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t, 2 Cu pad: 0.32 mm × 6) Fig: 1 1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) PD – Ta 350 Mounted on FR4 board Drain power dissipation PD (mW) 300 250 200 150 100 50 0 0 (25.4 mm × 25.4 mm × 1.6 t, 2 Cu pad: 0.32 mm × 6) Fig: 1 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 5 2007-11-01 SSM6J08FU RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-11-01