SSM6L09FU_07

SSM6L09FU TOSHIBA Field Effect Transistor Silicon N/P Channel MOS Type SSM6L09FU Power Management Switch High Speed Switching Applications Unit: mm • • Small package Low on resistance Q1: Ron = 0.7 Ω (max) (@VGS = 10 V) Q2: Ron = 2.7 Ω (max) (@VGS = −10 V) Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP Rating 30 ±20 400 800 Unit V V mA Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP Rating −30 ±20 −200 −400 Unit V V mA JEDEC JEITA TOSHIBA ― ― 2-2J1C Weight: 6.8 mg (typ.) Absolute Maximum Ratings (Q1, Q2 common) (Ta = 25°C) Characteristics Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range Symbol PD (Note 1) Tch Tstg Rating 300 150 −55~150 Unit mW °C °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating, mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm × 6) Figure 1. 1 2007-11-01 SSM6L09FU Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Marking Equivalent Circuit (top view) 6 Figure 1: 25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.32 mm2 × 6 6 5 4 5 4 0.4 mm 0.8 mm 3 Test Condition VGS = ±16 V, VDS = 0 ID = 1 mA, VGS = 0 VDS = 20 V, VGS = 0 VDS = 5 V, ID = 0.1 mA VDS = 5 V, ID = 200 mA ID = 200 mA, VGS = 10 V (Note2) (Note2) (Note2) (Note2) Min ⎯ 30 ⎯ 1.1 270 ⎯ ⎯ ⎯ ⎯ VDS = 5 V, VGS = 0, f = 1 MHz ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 0.53 0.8 1.0 20 7 16 72 68 K5 1 2 3 1 Q1 Q2 2 Q1 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS IDSS Vth ⎪Yfs⎪ Max ±1 ⎯ 1 1.8 ⎯ 0.7 1.2 1.7 ⎯ ⎯ pF pF pF ns Ω Unit μA V μA V mS Drain-Source ON resistance RDS (ON) ID = 200 mA, VGS = 4 V ID = 200 mA, VGS = 3.3 V Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Ciss Crss Coss ton toff VDD = 5 V, ID = 200 mA, VGS = 0~4 V ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Note2: Pulse test Switching Time Test Circuit (Q1: Nch MOS FET) (a) Test circuit 4V 0 10 μs VDD = 5 V Duty < 1% = VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C OUT IN 50 Ω RL VDD 0V 10% (b) VIN 4V 90% (c) VOUT VDD 10% 90% tr ton tf toff VDS (ON) 2 2007-11-01 SSM6L09FU Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. Q2 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-Source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Symbol IGSS V (BR) DSS IDSS Vth ⎪Yfs⎪ Test Condition VGS = ±16 V, VDS = 0 ID = −1 mA, VGS = 0 VDS = −30 V, VGS = 0 VDS = −5 V, ID = −0.1 mA VDS = −5 V, ID = −100 mA (Note2) ID = −100 mA, VGS = −10 V (Note2) Drain-Source ON resistance RDS (ON) ID = −100 mA, VGS = −4 V (Note2) ID = −100 mA, VGS = −3.3 V(Note2) Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Ciss Crss Coss ton toff VDS = −5 V, VGS = 0, f = 1 MHz VDS = −5 V, VGS = 0, f = 1 MHz VDS = −5 V, VGS = 0, f = 1 MHz VDD = −5 V, ID = −100 mA, VGS = 0~−4 V Min ⎯ −30 ⎯ −1.1 115 ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 2.1 3.3 4.0 22 5 14 85 85 Max ±1 ⎯ −1 −1.8 ⎯ 2.7 4.2 6.0 ⎯ ⎯ pF pF pF ns Ω Unit μA V μA V mS ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Note2: Pulse test Switching Time Test Circuit (Q2: Pch MOS FET) (a) Test circuit 0 −4 V 10 μs VDD = −5 V Duty < 1% = VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C OUT IN 50 Ω RL VDD −4 V (b) VIN 0V 10% 90% (c) VOUT VDS (ON) 90% 10% tr ton tf toff VDD Precaution Vth can be expressed as voltage between gate and source when low operating current value is ID = −100 μA for this product. For normal switching operation, VGS (on) requires higher voltage than Vth and VGS (off) requires lower voltage than Vth. (Relationship can be established as follows: VGS (off) < Vth < VGS (on) ) Please take this into consideration for using the device. 3 2007-11-01 SSM6L09FU Q1 (Nch MOS FET) ID – VDS 1000 Common Source 800 10 4 Ta = 25°C 3.3 600 3.0 400 2.8 2.6 200 VGS = 2.4 V 0 0 0.5 1 1.5 2 2 1.8 Common Source Ta = 25°C RDS (ON) – ID Drain-Source on resistance RDS (ON) (Ω) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 200 400 600 800 1000 10 V VGS = 3.3 V 4V Drain current ID (mA) Drain-Source voltage VDS (V) Drain current ID (mA) ID – VGS 1000 Common Source VDS = 5 V 100 2 1.8 RDS (ON) – VGS Common Source ID = 200 mA Drain-Source on resistance RDS (ON) (Ω) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 −25°C 25°C Ta = 100°C (mA) 25°C 10 Ta = 100°C 1 −25°C Drain current ID 0.1 0.01 0 1 2 3 4 0 0 2 4 6 8 10 Gate-Source voltage VGS (V) Gate-Source voltage VGS (V) ⏐Yfs⏐ – ID RDS (ON) – Ta 2 1.8 Common Source 500 ID = 200 mA 1000 Common Source VDS = 5 V Ta = 25°C Forward transfer admittance ⏐Yfs⏐ (mS) 75 100 125 150 Drain-Source on resistance RDS (ON) (Ω) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 −25 0 25 50 10 V VGS = 3.3 V 4V 300 100 50 30 10 10 30 50 100 300 500 1000 Ambient temperature Ta (°C) Drain current ID (mA) 4 2007-11-01 SSM6L09FU Q1 (Nch MOS FET) Vth – Ta 2 1000 Common Source 1.8 IDR – VDS Common Source VGS = 0 Ta = 25°C D 600 G S 400 IDR Drain Reveres current IDR (mA) Vth (V) ID = 0.1 mA VDS = 5 V 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 −25 0 25 50 75 800 Gate threshold voltage 200 100 125 150 0 0 −0.2 −0.4 −0.6 −0.8 −1 −1.2 −1.4 Ambient temperature Ta (°C) Drain-Source voltage VDS (V) C – VDS 500 Common Source VGS = 0 V f = 1 MHz Ta = 25°C 5000 t – ID Common Source VDD = 5 V VGS = 0~4 V Ta = 25°C Switching time t (ns) Capacitance C (pF) 100 1000 toff tf 100 ton tr Ciss 10 Coss Crss 1 0.1 10 1 1 10 100 10 100 1000 Drain-Source voltage VDS (V) Drain current ID (mA) 5 2007-11-01 SSM6L09FU Q2 (Pch MOS FET) ID – VDS −500 Common Source Ta = 25°C −400 −10 −4 7 8 Common Source Ta = 25°C RDS (ON) – ID Drain-Source on resistance RDS (ON) (Ω) (mA) 6 5 4 −4 V 3 2 1 0 0 −10 V VGS = −3.3 V −3.3 −300 −3.0 −200 −2.8 −2.6 −100 VGS = −2.4 V 0 0 −0.5 −1 −1.5 −2 Drain current ID −100 −200 −300 −400 −500 Drain-Source voltage VDS (V) Drain current ID (mA) ID – VGS −1000 Common Source VDS = −5 V 7 −100 8 RDS (ON) – VGS Common Source ID = −100 mA Drain-Source on resistance RDS (ON) (Ω) (mA) 25°C −10 Ta = 100°C −1 −25°C 6 5 Ta = 100°C 4 3 2 1 25°C Drain current ID −0.1 −25°C −0.01 0 −1 −2 −3 −4 0 0 −2 −4 −6 −8 −10 Gate-Source voltage VGS (V) Gate-Source voltage VGS (V) ⏐Yfs⏐ – ID RDS (ON) – Ta 8 Common Source 500 7 ID = −100 mA 1000 Common Source VDS = −5 V Ta = 25°C Forward transfer admittance ⏐Yfs⏐ (mS) 300 Drain-Source on resistance RDS (ON) (Ω) 6 5 4 3 2 1 0 −25 VGS = −3.3 V −4 V −10 V 100 50 30 0 25 50 75 100 125 150 10 −10 −30 −50 −100 −300 −500 −1000 Ambient temperature Ta (°C) Drain current ID (mA) 6 2007-11-01 SSM6L09FU Q2 (Pch MOS FET) Vth – Ta −2 −500 Common Source −1.8 IDR – VDS Common Source VGS = 0 Ta = 25°C D −300 G S −200 IDR Drain Reveres current IDR (mA) Vth (V) ID = −0.1 mA VDS = −5 V −1.6 −1.4 −1.2 −1 −0.8 −0.6 −0.4 −0.2 0 −25 0 25 50 75 −400 Gate threshold voltage −100 100 125 150 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Ambient temperature Ta (°C) Drain-Source voltage VDS (V) C – VDS 500 Common Source VGS = 0 V f = 1 MHz Ta = 25°C 5000 t – ID Common Source VDD = −5 V VGS = 0~−4 V Ta = 25°C Switching time t (ns) Capacitance C (pF) 100 1000 toff tf 100 ton tr Ciss 10 Coss Crss 1 −0.1 10 −1 −1 −10 −100 −10 −100 −1000 Drain-Source voltage VDS (V) Drain current ID (mA) Q1, Q2 common PD* – Ta 400 Mounted on FR4 board (25.4 mm × 25.4 mm ×1.6 t 2 Cu pad: 0.32 mm × 6) Figure 1 300 Power dissipation PD* (mW) 200 100 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) *: Total rating 7 2007-11-01 SSM6L09FU RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2007-11-01