SSM6N36FE

SSM6N36FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N36FE ○ High-Speed Switching Applications • • 1.5-V drive Low ON-resistance: Ron = 1.52 Ω (max) (@VGS = 1.5 V) : Ron = 1.14 Ω (max) (@VGS = 1.8 V) : Ron = 0.85 Ω (max) (@VGS = 2.5 V) 1.6±0.05 1.0±0.05 0.5 0.5 1.6±0.05 1.2±0.05 Unit: mm : Ron = 0.66 Ω (max) (@VGS = 4.5 V) : Ron = 0.63 Ω (max) (@VGS = 5.0 V) 1 2 3 6 5 4 0.2±0.05 0.12±0.05 Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) 0.55±0.05 Characteristics Drain–source voltage Gate–source voltage Drain current Drain power dissipation Channel temperature Storage temperature DC Pulse Symbol VDSS VGSS ID IDP PD (Note 1) Tch Tstg Rating 20 ± 10 500 1000 150 150 −55 to 150 Unit V V mA mW °C °C 1.Source1 2.Gate1 4.Source2 5.Gate2 6.Drain1 ES6 JEDEC 3.Drain2 ― JEITA ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-2N1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating Weight: 3.0 mg (typ.) temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6) Marking 6 5 4 Equivalent Circuit (top view) 6 5 4 NX 1 2 3 1 Q1 Q2 2 3 1 2008-02-26 SSM6N36FE Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Drain-source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Symbol V (BR) DSS V (BR) DSX IDSS IGSS Vth |Yfs| Test Condition ID = 1 mA, VGS = 0 ID = 1 mA, VGS = - 10 V VDS =20 V, VGS = 0 VGS = ±10 V, VDS = 0 VDS = 3 V, ID = 1 mA VDS = 3 V, ID = 200 mA ID = 200 mA, VGS = 5.0 V ID = 200 mA, VGS = 4.5 V Drain-source ON-resistance RDS (ON) ID = 200 mA, VGS = 2.5 V ID = 100 mA, VGS = 1.8 V ID = 50 mA, VGS = 1.5 V Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate−Source Charge Gate−Drain Charge Switching time Turn-on time Turn-off time Ciss Coss Crss Qg Qgs Qgd ton toff VDSF VDS = 10V, ID = 0.5 A VGS = 4.0 V VDD = 10 V, ID = 200 mA VGS = 0 to 2.5 V, RG = 50 Ω ID = -0.5 A, VGS = 0 V (Note2) VDS = 10 V, VGS = 0, f = 1 MHz (Note2) (Note2) (Note2) (Note2) (Note2) (Note2) Min 20 12 ⎯ ⎯ 0.35 420 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 840 0.46 0.51 0.66 0.81 0.95 46 10.8 7.3 1.23 0.60 0.63 30 75 -0.88 Max ⎯ ⎯ 1 ±1 1.0 ⎯ 0.63 0.66 0.85 1.14 1.52 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ -1.2 ns V nC pF Ω Unit V μA μA V mS Drain-source forward voltage Note2: Pulse test Switching Time Test Circuit (Q1, Q2 Common) (a) Test Circuit 2.5 V 0 10 μs OUT VDD = 10 V RG = 50 Ω D.U. ≤ 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C (b) VIN 2.5 V 10% 90% IN RG 0V (c) VOUT VDD 90% 10% tr ton toff tf VDD VDS (ON) Usage Considerations Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for the SSM6N36FE). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2008-02-26 SSM6N36FE ID – VDS 1000 10 V 4.5 V 2.5 V 1.8 V 1000 ID – VGS (mA) (mA) 800 100 ID Ta = 100 °C 600 ID Drain current 1.5 V 10 Drain current 400 VGS = 1.2 V 200 Common Source Ta = 25 °C 0 0.2 0.4 0.6 0.8 1.0 1 − 25 °C 25 °C Common Source VDS = 3 V 1.0 2.0 3.0 0.1 0 0.01 0 Drain-source voltage VDS (V) Gate-source voltage VGS (V) RDS (ON) – VGS 3 ID =200 mA Common Source 3 Common Source Ta = 25°C RDS (ON) – ID Drain-source ON-resistance RDS (ON) (Ω) 2 Drain-source ON-resistance RDS (ON) (Ω) 2 25 °C 1 Ta = 100 °C − 25 °C 0 0 2 4 6 8 10 1.8 V 1 1.5 V VGS = 4.5V 2.5V 0 0 200 400 600 800 1000 Gate-source voltage VGS (V) Drain current ID (mA) RDS (ON) – Ta 1.5 1.0 Vth – Ta Common Source VDS = 3 V ID = 1 m A Drain-source ON-resistance RDS (ON) (Ω) 100 m A / 1.8 V 200 m A / 2.5 V 1.0 200 m A / 4.5 V Gate threshold voltage Vth (V) 0.5 0 −50 Common Source ID = 50 m A / VGS = 1.5 V 0.5 200 m A / 5.0 V 0 −50 0 50 100 150 0 50 100 150 Ambient temperature Ta (°C) Ambient temperature Ta (°C) 3 2008-02-26 SSM6N36FE (mS) 10000 Common Source 3000 Ta = 25°C VDS = 3 V |Yfs| – ID 1000 IDR – VDS (mA) Drain reverse current IDR 100 ⎪Yfs⎪ Forward transfer admittance 1000 25 °C 10 Ta =100 °C Common Source VGS = 0 V D 1 G −25 °C 0.1 0 S –0.5 –1.0 –1.5 IDR 300 100 30 10 1 10 100 1000 Drain current ID (mA) Drain-source voltage VDS (V) C – VDS 100 1000 toff 50 t – ID Common Source VDD = 10 V VGS = 0 to 2.5 V Ta = 25 °C RG = 4.7 Ω (ns) Ciss (pF) 30 tf C Capacitance 10 Switching time t Coss Crss Common Source Ta = 25°C f = 1 MHz VGS = 0 V 1 0.1 1 10 100 10 100 5 3 ton tr 1 10 100 1000 Drain-source voltage VDS (V) Drain current ID (mA) (mW) Dynamic Input Characteristic 10 Common Source PD* – Ta 250 Mounted on a FR4 board. (25.4 mm × 25.4 mm × 1.6 mm , Cu Pad: 0.135 mm2 × 6) (V) P D* Drain power dissipation 3 VDD = 16 V 1 2 ID = 0.5 A 8 Ta = 25°C 200 VGS Gate-source voltage 6 VDD = 10 V 4 150 100 2 150 0 0 0 -40 -20 0 20 40 60 80 100 120 140 160 Total Gate Charge Qg (nC) *: Total Rating Ambient temperature Ta (°C) 4 2008-02-26 SSM6N36FE RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. 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