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TA8493AF

TA8493AF

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    TA8493AF - 3-PHASE FULL WAVE BRUSHLESS DC MOTOR DRIVER IC FOR CD-ROM DRIVES - Toshiba Semiconductor

  • 数据手册
  • 价格&库存
TA8493AF 数据手册
TA8493F/AF/BF Toshiba Bipolar Linear Integrated Circuit Multi-Chip TA8493F, TA8493AF, TA8493BF 3-Phase Full Wave Brushless DC Motor Driver IC for CD-ROM Drives These 3-phase, full-wave, brushless DC motor driver ICs have been developed for use in CD-ROM drive spindle motors. The TA8493F/ AF/ BF contain in its upper stage a discrete power transistor (P-ch-MOS) and uses direct PWM control system, which enables the IC to provide superior thermal efficiency. Furthermore, the multi-chip structure of this device facilitates dispersion of the heat generated inside the package, making it possible to suppress heat concentration. Features · · · · · · · · · Multi-chip structure (3 × 2SJ465 chips built-in) Direct PWM control system Drive system: 120°drive system (TA8493F/BF) : 180°drive system (TA8493AF) Built-in current limiter: ILIM = 0.7 A (typ.) (at RF = 0.33 Ω) Built-in reversing brake/short brake functions FG signal output (using hall element output signal) Built-in hall bias Built-in thermal shutdown circuit Package: MFP-30 Weight: 0.63 g (typ.) 1 2002-01-31 TA8493F/AF/BF Block Diagram VCC 5V La (G) 20 VCC 2 Lb (G) 1 Lc (G) 27 29 Amplifier 4 VM1 12 V Ha + - 15 14 Matrix 13 Ha + Hb 12 Hb 16 + Hc - 17 Hc VM2 3 30 28 La Lb Lc RF1 RF2 Reverse Detection TSD 6 25 GND FGO 10 HB 18 PWM Signal VC 21 Vref 22 F/F OSC Mode Select MS 26 OSC 23 Short Brake BRK 11 24 GND1 7 GND2 2SJ465 ´ 3 9 pin: N.C. Stand by 19 Cd 5 SB 8 CRF 2 2002-01-31 TA8493F/AF/BF PIN Assignment Terminal No. 1 2 3 4 5 Terminal Symbol Lb (G) La (G) La VM2 SB Function b-phase upper side power transistor (base) output terminal a-phase upper side power transistor (base) output terminal a-phase output terminal Supply voltage terminal for motor drive RUN/STOP control terminal Keep open. Keep open. Connect to the coil. Connect to VM1 externally. H: RUN, L: STOP Sets limiter current value. 6 RF1 GND2 CRF N.C. FGO BRK Hb + Hb Ha + Ha + Hc Hc Remarks Output current detection terminal Connect to RF2 externally and between this terminal and GND. ¾ Connect a capacitor between this terminal and GND. 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 GND Output current filter terminal FG amplifier output terminal Brake mode select terminal b-phase negative hall signal input terminal b-phase positive hall signal input terminal a-phase negative hall signal input terminal a-phase positive hall signal input terminal c-phase positive hall signal input terminal a-phase negative hall signal input terminal Hall element bias terminal Forward/reverse changeover gain adjustment terminal Supply voltage terminal for control circuits Control amplifier input terminal Control amplifier reference voltage input terminal Triangular wave oscillation terminal GND Outputs a signal whose frequency is determined by the CD rotation frequency. Output mode when VC > Vref Connect to hall element output terminal. Connect to hall element output terminal. Connect to hall element output terminal. Connect to hall element output terminal. Connect to hall element output terminal. Connect to hall element output terminal. Open collector output. Connect to the negative side of hall element bias line. Adjust a rotation direction changeover gain VCC (opr) = 4.5 to 5.5 V Use the control signal as input. Use the reference voltage for the control amplifier as input. Connect a capacitor between this terminal and GND. ¾ Sets limiter current value. HB Cd VCC VC Vref OSC GND1 25 RF2 MS Lc (G) Lc VM1 Lb Output current detection terminal Connect to RF1 externally and between this terminal and GND. Determines output mode. Keep open. Connect to the coil. Connect to VM2 externally. Connect to the coil. 26 27 28 29 30 Mode select terminal c-phase upper side power transistor (base) output terminal c-phase output terminal Supply voltage terminal for motor drive b-phase output terminal 3 2002-01-31 TA8493F/AF/BF Absolute Maximum Ratings (Ta = 25°C) Characteristics Power Supply Voltage Output Current Power Dissipation Junction Temperature Operating Temperature Storage Temperature Symbol VCC VM IO PD (Note1) Tj Topr Tstg 150 -20 to 75 -55 to 150 °C °C °C Rating 7 16 1.5 1.0 A W Unit V Note1: unmounted Operating Voltage Range Characteristics Power Supply Voltage Symbol VCC VM Operating Range 4.5 to 5.5 10 to 14 Unit V Electrical Characteristics (VCC = 5 V, VM = 12 V, Ta = 25°C) Characteristics Supply Voltage Input Current Hall Amp. Common Mode Input Voltage Range Input Amplitude Hall Element Bias Saturation Voltage Common Mode Input Voltage Range Input Current Control Amp. Dead Zone Voltage Width Symbol ICC1 ICC2 IINH VCMRH VH VHB VCMRC 2 IINC VDZ DVOFF (F) 2 DVOFF (R) ILIM VLIM Input Voltage (H) RUN/STOP Control Circuit Input Voltage (L) Input Current VINS (H) VINS (L) IINS (L) 1 ¾ 3 (RUN) (STOP) VINS = GND, (source current) ¾ VC = Vref = 1.65 V, (source current) Vref = 1.65 V, RF = 0.33 W (Note2) CW mode, Vref = 1.65 V, RF = 0.33 W CCW mode, Vref = 1.65 V, RF = 0.33 W RF = 0.33 W ¾ (Note2) ¾ ¾ 20 20 ¾ 0.25 3.0 GND ¾ ¾ 100 5.0 ¾ 150 150 ¾ 0.35 VCC 1.0 1 mA mA V V mV mA 2 IHB = 10 mA ¾ 2 Test Circuit 1 Test Condition Stop mode Run mode, output open VCMRH = 2.5 V, (sink current) ¾ ¾ Min ¾ ¾ ¾ 1.5 100 ¾ 0.5 Typ. 0.3 7 ¾ ¾ ¾ 1.3 ¾ Max 0.8 15 2 4.0 ¾ 2.0 4.0 mA V mVp-p V V Unit mA 50 50 700 0.3 ¾ ¾ ¾ Input Offset Voltage Current Limit Amp. Limit Current Note2: this is not tested. 4 2002-01-31 TA8493F/AF/BF Characteristics Output Resistance (upper side) Saturation Voltage (lower side) Cut-off Current (upper side) Cut-off Current (lower side) Input Voltage (H) Mode Select Circuit Symbol Test Circuit Test Condition IO = 0.6 A 4 VSAT (L) IO = 0.6 A VL = 16 V 5 IL (L) VMS (H) 6 Input Voltage (L) Input Current Hysteresis Voltage FG Amp. Output Voltage (H) Output Voltage (L) Input Voltage (H) Short Brake Circuit Triangular Oscillation Circuit Input Voltage (L) Input Current Oscillation Frequency VMS (L) IINMS VHYS VOFG (H) 7 VOFG (L) VBRK (H) VBRK (L) IINBRK fOSC ¾ ¾ 6 Sink current: 10 mA ¾ ¾ VBRK = GND, (source current) C = 560 pF Junction temperature (according to design specification) (Note2) 8 VL = 16 V CCW mode VC > Vref, BRK: L Reversing brake mode VC > Vref, BRK: L VMS = GND, (source current) ¾ Source current: 10 mA 3.0 ¾ ¾ ¾ 10 ¾ ¾ 0.4 ¾ 0.8 V Min ¾ Typ. Max Unit W RON (U) 0.5 1.0 Output Circuit IL (U) 10 mA VCC V ¾ ¾ 5 VCC - 0.5 ¾ 3.0 ¾ ¾ ¾ ¾ (Note2) ¾ ¾ 20 ¾ ¾ ¾ ¾ ¾ 39 0.5 1 45 ¾ V 0.5 VCC 0.5 1 ¾ ¾ mA kHz mA mVp-p V Thermal Shut-down Operating Temperature TSD 175 °C Note2: this is not tested. 5 2002-01-31 TA8493F/AF/BF Function Table Forward Ha H H L L L H Hb L H H H L L Hc L L L H H H La H H M L L M Lb L M H H M L Lc M L L M H H La L L M H H M Reverse Lb H M L L M H Lc M H H M L L La = -(Hc - Ha) Lb = -(Ha - Hb) Lc = -(Hb - Hc) La = (Hc - Ha) Lb = (Ha - Hb) Lc = (Hb - Hc) Timing Diagram (TA8493F/BF) Ha + Hb Hc Hall Signal - VM La Output Voltage GND + Output Current - 6 2002-01-31 TA8493F/AF/BF (TA8493AF) Ha + Hb Hc Hall Signal - VM La Output Voltage GND + Output Current - 7 2002-01-31 TA8493F/AF/BF Functional Description · This IC is a 3-phase, full wave brushless DC motor driver of the direct PWM control type. Control amp input circuit VCC VC Vref The common mode input voltage ranges for both VC and Vref are 0.5 to 4.0 V. Relation between control input and PWM ON duty is shown below, PWM ON duty is 100% when ïVref - VCï = 0.75 V (typ.) The input is provided with a dead-zone area whose voltage width is 100 mV (typ.) (%) PWM on duty 100 Dead-zone voltage width 100 mV (typ.) 0.5 Vref - 0.75 Vref VC (V) Vref + 0.75 · Mode select/short brake circuit MS BRK 8 2002-01-31 TA8493F/AF/BF When VC > Vref, one of three modes (reverse rotation, reversing brake or short brake mode) can be selected by setting the MS and BRK pins appropriately. VC < Vref BRK H MS H L Forward Forward L Forward Forward MS L H H Short brake Short brake VC > Vref BRK L Reverse Reversing brake In Short Brake mode, the upper-stage power transistor is turned on and the lower-stage power transistor is turned off. (short brake) MS: H or L, BRK: H VC Vref Forward mode Short Brake mode Forward mode (reversing brake) (1) When stopping the motor by applying a reversing brake after a short brake MS: L H BRK L VC Vref Forward mode Short Brake mode Reversing Brake mode Stopped 9 2002-01-31 TA8493F/AF/BF (2) When stopping the motor using reversing brake mode MS: L, BRK: L VC Vref Forward mode Reversing Brake mode Stopped Note3: For an explanation of the Reversing Brake mode stopping sequence, refer to the explanation of the reverse rotation detection circuit. The short brake generates less heat than the reversing brake. Therefore Toshiba recommends a combined use of the short and reversing brakes when stopping the motor. · Run/stop control circuit SB When the driver IC is standing by, all of its circuits except the FG amp and the hall amp are turned off. H: start L: standby · Hall amp circuit Ha + Ha - The common mode input voltage range for VCMRH is 1.5 to 4.0 V. 10 2002-01-31 TA8493F/AF/BF · Hall element bias circuit HB The hall element bias current is turned off when the driver IC is in standby state. Make sure that the negative hall bias line is connected to the HB pin. The remaining voltage is as follows: VHB = 1.2 V (typ.) at IHB = 10 mA Furthermore, this circuit cannot be used if FG output is necessary in standby state. When the HB terminal is not used, the negative hall bias line must be connected to GND with a resistor in between. · FG amp circuit FGO This circuit uses a hall element signal which is output to FGO after a Schmitt stage. The FG amp has a hysteresis of 20 mVp-p (typ.) and its output voltages are High level: VCC - 0.5 to VCC [V] Low level: GND to 0.5 V at IOFG = 10 mA The FG amp is active when it is in standby state. When the hall element signal is input, the FG signal is output. 11 2002-01-31 TA8493F/AF/BF · Reverse rotation detection circuit By comparing the two phases of the Hall element signal, this circuit detects a state where the phases are inverted, at which time the torque is reduced to 0. The detection accuracy is determined by the number of pulses per rotation of Hall element output. Hall Element Signal (phase b) Hall Element Signal (phase a) Vref VC Direction of Rotation Forward rotation (Note4) Reverse rotation Rotating Torque Forward torque Stopped Reverse torque Note4: Due to its inertial force, the motor does not stop immediately after the torque is reduced to 0. 12 2002-01-31 TA8493F/AF/BF · Output circuit *VCC/VM La * VCC : TA8493AF/BF VM : TA8493F La RF (upper stage) (lower stage) This circuit uses the system to chop the lower power transistors and resurrect coil current through upper stage diodes. The upper-stage power transistors consists of Pch-MOS transistors (2SJ465), which give high torque efficiency. VM (coil current) Lower Pw Tr.: ON Lower Pw Tr.: OFF fPWM = 20 k to 50 kHz RF VM VLa GND Note: Lower-stage predrivers of TA8493AF/BF are supplied by VCC to reduce the power dissipation. · Triangular wave oscillator circuit Triangular waves are generated by connecting a capacitor between the OSC pin and GND. This circuit is current output type, which makes PWM signal by comparing its output current with control amp output current. 50 ´ 10 6 [A] fOSC [Hz] = (3.0 - 0.7) [V] ´ C [F] 3.0 V 0.7 V Taking into account efficiency considerations and the effects of noise, Toshiba recommends using the IC with an oscillation frequency of 20 kHz to 50 kHz. 13 2002-01-31 TA8493F/AF/BF · Current limiter circuit The current limit value is determined by the equation below. 0.3 ~ [A] (typ.) ILIM RF + 0.1 This circuit cut off lower power transistors compulsorily when filtered VRF is more than reference voltage. (0.3 V) PWM signal cut off compulsorily is released from OFF state by next ON signal. Over current detection term Limiter Amp. Output PWM Signal (Note5) Lower Pw Tr. ON OFF ON OFF ON OFF ON Note5: Keep “H” level in this term Consider inside resistance (5 kW) when setting the capacitance value (CRF). 5 kW IM Limiter amp circuit CRF RF · Thermal shut down circuit The circuit turns off output when Tj = 175°C (typ.) (according to design specification) 14 2002-01-31 TA8493F/AF/BF External Parts Terminal No. C1 C2 C3 C4 C5 C6 R1 R2 R3 Function Power supply line oscillation prevention Power supply line noise prevention Power supply line noise prevention Filter Forward/reverse changeover gain adjustment Triangular wave oscillation Hall element bias Control amp reference voltage Output current detection Recommended Value 0.22 mF 100 pF to 1000 pF 10 mF to 33 mF 470 pF 0.01 mF 470 pF to 1000 pF ¾ ¾ 0.25 W to 0.5 W ¾ ¾ (Note8) (Note9) ¾ (Note7) Remarks ¾ (Note6) (Note6) Note6: Absorb switching noise by C2 and C3. Note7: This is used to adjust the rotation direction changeover gain. This capacitance valve and the gain are in inverse. This capacitance is to prevent from output through current. Note8: Be sure to set this bias so that the hall element output amplitude and common mode input voltage fall within the ranges specified in the table of electrical characteristic. Note9: The voltage must be set to fall within the common mode input voltage range of the control amp. 15 2002-01-31 TA8493F/AF/BF Test Circuit 1. ICC1, ICC2, VINS (H), VINS (L), IINS RF1 560 pF 1.65 V 1.65 V 5 V 0.22 mF 23 22 Vref 21 VC 20 VCC 19 Cd 0.01 mF 18 HB 30 Lb 29 VM1 28 Lc 27 26 25 24 17 Hc - 16 Hc + Lc (G) MS RF2 GND1 OSC TA8493F/AF/BF Lb (G) La (G) La 1 2 3 VM2 4 SB 5 A RF1 GND2 CRF 6 0.33 W 7 470 pF 8 N.C. FGO BRK 9 10 11 Hb - Hb + Ha - Ha + 12 13 14 15 VSB · · · · ICC1: VSB = 0.5 V ICC2: VSB = 3.0 V VINS (H), VINS (L): Judged by the gap between ICC1 and ICC2 IINS: VINS = 0 V 16 2002-01-31 TA8493F/AF/BF 2. IINH, ICMRH, VHB, IINC, VCMRC RF1 560 pF VCMRC A 5V 0.22 mF 0.01 mF V VHc A 30 Lb 29 VM1 28 Lc 27 26 25 24 23 22 Vref 21 VC 20 VCC 19 Cd 18 HB 17 Hc - 16 Hc + Lc (G) MS RF2 GND1 OSC TA8493F/AF/BF Lb (G) La (G) La 1 2 3 VM2 4 SB 5 RF1 GND2 CRF 6 0.33 W 7 470 pF 8 N.C. FGO BRK 9 10 11 Hb - Hb + Ha - Ha + 12 13 A 14 15 A IINH 5V VHb VHa · · · · · IINH: Total of a phase negative and positive input current. VHa = VHb = VHc = 2.5 V VCMRH: Measure the IINH gap between VHa = 1.5 V and VHa = 4.0 V. b and c phase are measured the same method. VHB: IHB = 10 mA VINC: Total of VC and Vref input current. At VCMRC = 1.65 V. VCMRC: Measure the IINC gap between VCMRC = 0.5 V and VCMRC = 4.0 V. 17 2002-01-31 TA8493F/AF/BF 3. DVOFF (F), DVOFF (R), VLIM 22 V 5V RF1 560 pF 1.65 V VC 5V 0.22 mF 23 22 Vref 21 VC 20 VCC 19 Cd 0.01 mF 18 HB 30 Lb 29 VM1 28 Lc 27 26 25 24 17 Hc - 16 Hc + Lc (G) MS RF2 GND1 OSC TA8493F/AF/BF Lb (G) La (G) La 1 2 3 VM2 4 22 mF SB 5 RF1 GND2 CRF 6 0.33 W 7 8 N.C. FGO BRK 9 10 11 Hb - Hb + Ha - Ha + 12 13 14 15 1000 pF 5V VCRF 2.5 V · · · DVOFF (F): Measure VRF at VC = 1.63 V/1.5 V. DVOFF (R): Measure VRF at VC = 1.67 V/1.8 V. VLIM: Switch the VCRF from 0 V to 0.4 V. Measure the VCRF at the point when output voltage level changes from low (L) to high (H) 18 2002-01-31 TA8493F/AF/BF 4. RON (U), VSAT (L) 12 V + RF1 560 pF 1.65 V 0.5 V 5V 0.22 mF 0.01 mF VHc 30 Lb 29 VM1 28 Lc 27 26 25 24 23 22 Vref 21 VC 20 VCC 19 Cd 18 HB 17 Hc - 16 Hc + Lc (G) MS RF2 GND1 OSC TA8493F/AF/BF Lb (G) La (G) La 1 2 3 VM2 4 SB 5 RF1 GND2 CRF 6 7 8 N.C. FGO BRK 9 10 11 Hb - Hb + Ha - Ha + 12 13 14 15 0.6 A 0.6 A 5V VHb + + + + VHa + 2.5 V · RON (U): Determined output function by VHa , VHb , VHc (2.45 V/2.55 V). Measure voltage value between VM and La, and change to resistance valve. b phase and c phase are measured the same method. · VSAT (L): Determined output function by VHa , VHb , VHc (2.45 V/2.55 V). Measure voltage value between La and GND. b phase and c phase are measured the same method. + + + 19 2002-01-31 TA8493F/AF/BF 5. IL (U), IL (L) 16 V A RF1 560 pF 5V 0.22 mF 23 22 Vref 21 VC 20 VCC 19 Cd 0.01 mF 18 HB 30 Lb 29 VM1 28 Lc 27 26 25 24 17 Hc - 16 Hc + Lc (G) MS RF2 GND1 OSC TA8493F/AF/BF Lb (G) La (G) La 1 2 3 VM2 4 SB 5 RF1 GND2 CRF 6 7 8 N.C. FGO BRK 9 10 11 Hb - Hb + Ha - Ha + 12 13 14 15 · · IL (U): Measure IM when La and GND are shorted. b phase and c phase are measured the same method. IL (L): Measure IM when VM and La are shorted. b phase and c phase are measured the same method. 20 2002-01-31 TA8493F/AF/BF 6. VMS (H), VMS (L), IINS, VBRK (H), VBRK (L), IINBRK 12 V VMS RF1 560 pF A 30 Lb 29 VM1 28 Lc 27 26 25 24 23 22 Vref 21 VC 20 VCC 0.22 mF 19 Cd 0.01 mF 16 4V 5V VHc 18 HB 17 Hc - 16 Hc + Lc (G) MS RF2 GND1 OSC TA8493F/AF/BF Lb (G) La (G) La 1 2 3 VM2 4 SB 5 RF1 GND2 CRF 6 0.33 W 7 8 N.C. FGO BRK 9 10 11 A Hb - Hb + Ha - Ha + 12 13 14 15 5V VSB VHb VHa 2.5 V · · · · · VMS (H): VMS = 3.0 V, VBRK = 0 V, verify that output function is reverse mode. VMS (L): VMS = 0.5 V, VBRK = 0 V, switch from foward mode to reverse mode by VHa, VHb VHc. Verify that VRF changes to zero. IMS (L): VMS = 0 V, VBRK = 0 V VBRK (H): VMS = 5 V, VBRK = 3.0 V, verify that La = Lb = Lc: H VBRK (L): VMS = 5 V, VBRK = 0.5 V, verify that output function is reverse mode. 21 2002-01-31 TA8493F/AF/BF 7. VOFG (H), VOFG (L) 5V 0.22 mF 23 22 Vref 21 VC 20 VCC 19 Cd 0.01 mF 18 HB 560 pF 30 Lb 29 VM1 28 Lc 27 26 25 24 17 Hc - 16 Hc + Lc (G) MS RF2 GND1 OSC TA8493F/AF/BF Lb (G) La (G) La 1 2 3 VM2 4 SB 5 RF1 GND2 CRF 6 7 8 N.C. FGO BRK 9 10 11 Hb - Hb + Ha - Ha + 12 13 14 15 5V 2.5 V VHb + · · VOFG (H): VHb = 2.53 V, IFGO = 10 mA (source) + VOFG (L): VHb = 2.47 V, IFGO = 10 mA (sink) + 8. VHYS 5V 0.22 mF 23 22 Vref 21 VC 20 VCC 19 Cd 0.01 mF 18 HB 560 pF 30 Lb 29 VM1 28 Lc 27 26 25 24 17 Hc - 16 Hc + Lc (G) MS RF2 GND1 OSC TA8493F/AF/BF Lb (G) La (G) La 1 2 3 VM2 4 SB 5 RF1 GND2 CRF 6 7 8 N.C. FGO BRK 9 10 V 11 Hb - Hb + Ha - Ha + 12 13 14 15 5V 2.5 V VHb + · VHYS: Switch the VHb from high (H) to low (L) and from (L) to (H). Measure the VHb at the point when FGO function changes. + + 22 2002-01-31 TA8493F/AF/BF Application Circuit VCC R1 5V C1 La (G) 20 VCC 2 Lb (G) 1 Lc (G) 27 29 Amplifier 4 VM1 C3 Matrix VM2 3 30 17 28 Reverse Detection TSD 6 25 GND La Lb Lc RF1 RF2 R3 F/F OSC Mode Select MS 26 OSC 23 C6 Short Brake BRK 11 24 GND1 7 GND2 Stand by 19 Cd C5 5 SB C2 12 V Ha Ha + 15 - 14 + Hb Hb + Hc Hc 13 12 16 R1 FGO 10 HB Contol signal R2 R2 VC Vref 18 21 22 Vref 2SJ465 ´ 3 Note10: Utmost care is necessary in the design of the output line, VCC, VM and GND line since IC may be destroyed due to short-circuit between outputs, air contamination fault, or fault by improper grounding. 23 2002-01-31 C4 PWM Signal 8 CRF TA8493F/AF/BF Package Dimensions Weight: 0.63 g (typ.) 24 2001-08-30 TA8493F/AF/BF RESTRICTIONS ON PRODUCT USE 000707EBA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The products described in this document are subject to the foreign exchange and foreign trade laws. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 25 2001-08-30
TA8493AF 价格&库存

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