TB6674PG,C,8

TB6674PG/FG/FAG TOSHIBA BiCD Integrated Circuit Silicon Monolithic TB6674PG, TB6674FG, TB6674FAG Stepping Motor Driver IC TB6674PG, TB6674FG, and TB6674FAG are stepping motor driver ICs with MOS output transistors. The ICs can control two-phase stepping motor forward and reverse by bipolar driving. They have a power-saving circuit and a standby circuit. TB6674PG Features z They are similar substituting products of TA7774PG, TA7774FG, and TA7774FAG. Both products have same packages and same pin assignments. z One-chip two-phase bipolar stepping motor driver (including two bridge drivers) TB6674FG z Power saving operation is available. z Standby operation is available. Current consumption ≤ 20 μA (typ.) z Built-in punch-through current restriction circuit for system reliability and noise suppression. z TTL-compatible inputs INA, INB, PS, and Vs2B terminals z ON resistance PS = L : 2.9 Ω (Typ.) TB6674FAG PS = H: 7.9 Ω (Typ.) z High driving ability. : IO (START) 350 mA (MAX.) : VS1 ENABLE : IO (HOLD) 100 mA (MAX.) : VS2 ENABLE : IO (START) 100 mA (MAX.) : VS1 ENABLE : IO (HOLD) 50 mA (MAX.) : VS2 ENABLE z Typical PKG DIP16 pin, HSOP16 pin, SSOP16 pin z GND terminal = HEAT SINK z Process :BiCD0.6 (30 V) Weight DIP16-P-300-2.54A: 1.11 g (typ.) HSOP16-P-300-1.00: 0.50 g (typ.) SSOP16-P-225-1.00A: 0.14 g (typ.) z Over current shutdown circuit (ISD). z Thermal shutdown circuit (TSD). z Undervoltage lockout circuit (UVLO). z Pull-down resistance for input terminal (250 kΩ). The following conditions apply to solderability: About solderability, following conditions were confirmed (1)Use of Sn-37Pb solder Bath (2)Use of Sn-3.0Ag-0.5Cu solder Bath ·solder bath temperature: 230℃ ·solder bath temperature: 245℃ ·dipping time: 5 seconds ·dipping time: 5 seconds ·the number of times: once ·use of R-Type flux ·the number of times: once ·use of R-type flux 1 Ver.3 2010-07-07 TB6674PG/FG/FAG Block Diagram Bridge driver Bridge driver TB6674PG/FAG / TB6674FG Note: TB6674FG: Terminals 2, 7, 12, and 13 are NC. TB6674FG: The heat fin is connected to GND. Pin Description Pin No. Symbol Functional Description 1 / (1) VS2 A 2 / (3) VCC Power voltage supply terminal for control 3 / (4) IN A A-ch forward rotation / reverse rotation signal input terminal, Truth Table 1 4 / (F) GND GND terminal 5 / (F) GND GND terminal 6 / (5) IN B B-ch forward rotation / reverse rotation signal input terminal, Truth Table 1 7 / (6) PS 8 / (8) VS2 B Standby signal input terminal, Truth Table 2 9 / (9) VS1 B High-voltage power supply terminal 10 / (10) φB Output B 11 / (11) ΦB Output B 12 / (F) GND GND terminal 13 / (F) GND GND terminal 14 / (14) ΦA Output Α 15 / (15) φA Output A 16 / (16) VS1 A Low-voltage power supply terminal Power saving signal input terminal High-voltage power supply terminal. Pin No. of ( ) :TB6674FG 2 Ver.3 2010-07-07 TB6674PG/FG/FAG Truth Table 1. Input Output PS IN φ Φ L L L H ENABLE VS1 L H H L ENABLE VS1 H L L H ENABLE VS2 (Power saving) H H H L ENABLE VS2 (Power saving) Truth Table 2. VS2B L POWER H OFF (Standby mode) OPERATION Note: Apply 5 V to VS2A as a supply terminal. Input terminal (INA, INB, PS, and Vs2B) Vcc 250 kΩ 15 kΩ The diagram is partly-provided and omitted or simplified for explanatory purposes. 3 Ver.3 2010-07-07 TB6674PG/FG/FAG Absolute Maximum Ratings (Ta = 25°C) Characteristic Supply voltage TB6674PG TB6674FG Output current TB6674FAG Input voltage Symbol Rating VCC 6.0 VS1 24.0 VS2 Up to VCC IO (PEAK) ±400 IO (START) ±350 IO (HOLD) ±100 IO (PEAK) ±200 IO (START) ±100 IO (HOLD) ±50 VIN Up to VCC TB6674FG V mA V 1.4 (Note 1) TB6674PG Power dissipation Unit 2.7 (Note 2) PD W 0.9 (Note 3) 1.4 (Note 4) TB6674FAG 0.78 (Note 5) Operating temperature Topr －30 to 75 °C Storage temperature Tstg －55 to 150 °C Note 1: IC only Note 2: This value is obtained if mounting is on a 50 mm × 50 mm × 0.8 mm PCB, 60 % or more of which is occupied by copper. Note 3: IC only Note 4: This value is obtained if mounting is on a 60 mm × 30 mm × 1.6 mm PCB, 50 % or more of which is occupied by copper. Note 5: This value is obtained if mounting is on a 50 mm × 50 mm × 1.6 mm PCB, 40 % or more of which is occupied by copper. Operating Conditions (Ta = 25°C) Characteristic Supply voltage TB6674PG Output current TB6674FG TB6674FAG Symbol Min. Typ. Max. VCC 4.5 － 5.5 VS1 8.0 － 22.0 VS2A 2.7 － 5.5 IO － － ±350 Unit V mA IO － － ±100 Input voltage VIN 0 － VCC V Maximum frequency of input pulse fIN － － 25 kHz Minimum resolution of input pulse tw 20 － － μs Value of ON resistance tends to increase when the difference between Vs1 and Vs2A becomes 5 V or less. 4 Ver.3 2010-07-07 TB6674PG/FG/FAG Electrical Characteristics (Unless otherwise specified, Ta = 25°C, VCC = 5 V, VS1 = 12 V, and VS2A = 5 V) Characteristic Symbol Test Cir− cuit ICC1 Supply current ICC2 1 ICC3 High Typ. Max PS: H, VS2B: H ― 3 5 PS: L, VS2B: H ― 3 5 VS2B: L ― 1 20 2.0 ― Vcc －0.2 ― 0.8 ⎯ 90 ⎯ mV INA, INB, PS, Vs2B VIN = 5.0 V Built in pull-down resistance. 5 20 38 μA VIN = 0 V ⎯ ⎯ 1 μA ― Low Input hysteresis voltage* VIN L VINhys IIN (H) Input current 1 1 TB6674PG TB6674FG TB6674FAG Diode forward voltage Delay time Thermal shutdown circuit* hysteresis * Ron 1H 2 PS: L, VS2B: H IOUT = 400 mA ― 2 5 Ron 2H 3 PS: H, VS2B: H IOUT = 100 mA ― 7 16 Ron L 2 VS2B: H IOUT = 400 mA ― 0.9 3.5 Ron 1H 2 PS: L, VS2B: H IOUT = 200 mA ― 2 5 Ron 2H 3 PS: H, VS2B: H IOUT = 50 mA ― 7 16 Ron L 2 VS2B: H IOUT = 200 mA ― 0.9 3.5 ― 1.2 2.5 ― 1.0 2.2 ― 0.5 ― ― 0.5 ― VF U Unit mA μA V INA, INB, PS, Vs2B IIN (L) TSD Min VIN H Input voltage Output ON resistance (Note) Test Condition Ω 4 IF = 350 mA, PS = L ― IN − φ TSD ― (Design target only) ― 160 ― °C TSDhys ― (Design target only) ― 20 ― °C VF L tpLH tpHL V μs * ： Toshiba does not implement testing before shipping. 5 Ver.3 2010-07-07 TB6674PG/FG/FAG Undervoltage Lockout Circuit（UVLO） The TB6674 incorporates an under voltage lockout circuit. Outputs are turned off (Hi-Z) under the conditions as follows; VCC ≤ 4.0 V (Design target) or VS1A ≤ 6.0 V (Design target) and VS1B ≤ 6.0 V (Design target) or VS2A ≤ 2.2 V (Design target) The UVLO circuit has a hysteresis and the function recovers under the conditions as follows; VCC = 4.1 V (Design target), VS1A/ VS1B = 6.5 V (Design target), VS2A = 2.3 V (Design target) Vcc voltage 4.1 V (design target only) 4.0 V (design target only) UVLO operation H UVLO internal signal L H Output pin L Normal operation OFF（Hi-Z） Vs1A, Vs1B voltage 6.5 V (design target only) 6.0 V (design target only) UVLO operation H UVLO internal signal Output pin L H L Normal operation 6 OFF（Hi-Z） Ver.3 2010-07-07 TB6674PG/FG/FAG Vs2A voltage 2.3 V (design target only) 2.2 V (design target only) UVLO operation H UVLO internal signal L H Output pin L Normal operation 7 OFF（Hi-Z） Ver.3 2010-07-07 TB6674PG/FG/FAG Over Current Protection (ISD) Circuit The IC incorporates the over current protection circuit that monitors the current flowing through each output power transistor. If a current, which is out of the detecting current, is sensed at any one of these transistors, all output transistors are turned off (Hi-Z). (However, ISD is not incorporated in upper PchDMOS when PS is high level (Vs2A is 5 V usage) because ON resistance is large. Masking time is 20 μs. The operation does not recover automatically (latch method). There are two recovery methods written below. (1) Power monitor turns on when any of the power supply decreases and reaches the specified voltage. (2) Vs2B is set low level for 20 μs or more and then set high. The operation recovers in 10 μs. Reference design target of detecting current is as follows; PS = L, VS1A (12 V) :PchDMOS = 1.1 A PS = H/PS = L in common :Lower NchDMOS = 1.4 A Please reduce the external noise to prevent malfunction for ISD. ISD detecting value Output current 0 20 μs (Design target) ISD internal signal OFF time H L 20 μs (Design target) 10 μs (Design target) Vs2B Operation recovers by one of two cases. Power monitoring: ON UVLO (Power monitor) Power monitoring: OFF Power monitoring: ON Output terminal Normal operation 8 OFF（Hi-Z） Ver.3 2010-07-07 TB6674PG/FG/FAG Thermal Shutdown Circuit (TSD) The TB6674 incorporates a thermal shutdown circuit. If the junction temperature (Tj) exceeds 160°C (design target only), all the outputs are tuned off（Hi-Z）. It recovers automatically at 140℃. It has a hysteresis width of 20℃. TSD = 160°C (design target only) < TSD operation > 160°C (typ.) Chip temperature 140°C (typ.) TSD operation Internal TSD signal H L H Output terminal L Normal operation 9 OFF（Hi-Z） Ver.3 2010-07-07 TB6674PG/FG/FAG TB6674PG,/FG/FAG Test Circuit 1. ICC1, ICC2, ICC3, IIN A, IIN B, and IPS TB6674PG/FAG / Item SW1 SW2 SW3 SW4 ICC1 b b a a ICC2 b b b a ICC3 b b ― b IIN A a ― ― a IIN B ― a ― a IPS ― ― a a TB6674FG All terminals of INA, INB, and PS should output low or be connected to the ground terminal in measuring ICC3. 10 2010-08-25 TB6674PG/FG/FAG Ron 1H1, Ron 1H2, Ron L2, and Ron L3 TB6674PG,/FG/FAG Test Circuit 2. *: Adjust RL to correspond to IL. Item VSAT 1H1 VSAT 1H2 VSAT L2 VSAT L3 SW1 SW2 SW3 SW4 a ― b ― ― a ― b c a ― a b ― ― a ― b c a ― b b ― ― a SW5 IL (mA) a 100 a 400 b 100 b 400 a b b ― b d b d a c ― b d a ― b b ― ― a ― b b a c d 11 2010-08-25 TB6674PG/FG/FAG Ron 2H1, Ron 2H2, and Ron L1 TB6674PG,/FG/FAG Test Circuit 3. *: Adjust RL to correspond to IL. Item VSAT 2H1 VSAT 2H2 VSAT L1 SW1 SW2 SW3 SW4 a ― b ― ― a ― b d a ― a b ― ― a ― b d a ― b b ― ― a ― b SW5 IL (mA) a 20 a 100 b 20 a a a a b c b c a c d 12 2010-08-25 TB6674PG/FG/FAG Test Circuit 4. VF U, and VF L Measuring Method Item SW1 SW2 TB6674PG,/FG/FAG a VF U b c e d a VF L e b c d Timing Chart (two-phase excitation) 13 2010-08-25 TB6674PG/FG/FAG Thermal Performance Characteristics TB6674PG TB6674FG Thermal resistance Thermal resistance Mounting on a PCB of 60 mm x 30 mm x1.5 mm, 50% or more of which is occupied by copper No heat sink No heat sink Power Dissipation Power Dissipation Mounting on a PCB of 50 mm x 50 mm x 0.8 mm, 60% or more of which is occupied by copper Ambient Temperature Ambient Temperature TB6674FAG Mounting on a PCB of 50 mm x 50 mm x 1.6 mm, 40% or more of which is occupied by copper Power Dissipation PD (W) Thermal resistance Rth(j-a)=160°C/W Ambient Temperature Ta (°C) Application Circuit TB6674PG/FG/FAG / TB6674PG/FAG TB6674FG TA7774PG/FG/FAG Note 1: Connect the VS2A terminal to the lower supply voltage (5 V). Note 2: Supply smoothing capacitor* should be connected between each supply terminal (Vcc, VS2A, and VS1A/B) and GND terminal. *: (Ex.): Capacitors of tens of μF and 0.1 μF which are connected in parallel. Note 3: Utmost care is necessary in the design of the output, VCC, VM, and GND lines since the IC may be destroyed 14 2010-08-25 TB6674PG/FG/FAG by short-circuiting between outputs, air contamination faults, or faults due to improper grounding, or by short-circuiting between contiguous terminals. Note 4: By our short-circuited examination of neighboring terminals, when 9 and 10 terminals or 15 and 16 terminals are short-circuited, the TB6674PG, TB6674FG, and TB6674FAG in any case might to be destroyed and cause the trouble of smoking etc. Please use an appropriate fuse to the power supply line. Note 5: Connect VS1A terminal and VS1B terminal externally. Note 6: Connect each GND terminal externally. 15 2010-08-25 TB6674PG/FG/FAG Package Dimensions Unit: mm Weight: 1.11 g (Typ.) 16 2010-08-25 TB6674PG/FG/FAG Package Dimensions Unit: mm Weight: 0.50 g (Typ.) 17 2010-08-25 TB6674PG/FG/FAG Package Dimensions Unit: mm Weight: 質量 0.14 g (Typ.) 18 2010-08-25 TB6674PG/FG/FAG Notes on Contents 1. Block Diagrams Some of the functional blocks, circuits, or constants in the block diagram may be omitted or simplified for explanatory purposes. 2. Equivalent Circuits The equivalent circuit diagrams may be simplified or some parts of them may be omitted for explanatory purposes. 3. Timing Charts Timing charts may be simplified for explanatory purposes. 4. Application Circuits The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass production design stage. Toshiba does not grant any license to any industrial property rights by providing these examples of application circuits. 5. Test Circuits Components in the test circuits are used only to obtain and confirm the device characteristics. These components and circuits are not guaranteed to prevent malfunction or failure from occurring in the application equipment. IC Usage Considerations Notes on handling of ICs [1] The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a moment. Do not exceed any of these ratings. Exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result injury by explosion or combustion. [2] Use an appropriate power supply fuse to ensure that a large current does not continuously flow in case of over current and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or load, causing a large current to continuously flow and the breakdown can lead smoke or ignition. To minimize the effects of the flow of a large current in case of breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuit location, are required. [3] If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON or the negative current resulting from the back electromotive force at power OFF. IC breakdown may cause injury, smoke or ignition. Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause injury, smoke or ignition. [4] Do not insert devices in the wrong orientation or incorrectly. Make sure that the positive and negative terminals of power supplies are connected properly. Otherwise, the current or power consumption may exceed the absolute maximum rating, and exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result injury by explosion or combustion. In addition, do not use any device that is applied the current with inserting in the wrong orientation or incorrectly even just one time. 19 2010-08-25 TB6674PG/FG/FAG Points to remember on handling of ICs (1) Heat Radiation Design In using an IC with large current flow such as power amp, regulator or driver, please design the device so that heat is appropriately radiated, not to exceed the specified junction temperature (Tj) at any time and condition. These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown. In addition, please design the device taking into considerate the effect of IC heat radiation with peripheral components. (2) Back-EMF When a motor rotates in the reverse direction, stops or slows down abruptly, a current flow back to the motor’s power supply due to the effect of back-EMF. If the current sink capability of the power supply is small, the device’s motor power supply and output terminals might be exposed to conditions beyond absolute maximum ratings. To avoid this problem, take the effect of back-EMF into consideration in system design. 20 2010-08-25 TB6674PG/FG/FAG RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. 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