TBD62783APG(Z,HZW)

TBD62783APG/FG/FNG/FWG TOSHIBA BiCD Integrated Circuit Silicon Monolithic TBD62783APG, TBD62783AFG, TBD62783AFNG, TBD62783AFWG 8channel source type DMOS transistor array TBD62783A series are DMOS transistor array with 8 circuits. It has a clamp diode for switching inductive loads built-in in each output. Please be careful about thermal conditions during use. TBD62783APG Features 8 circuits built-in • High voltage • High current • : VOUT = 50 V (MAX) : IOUT = -500 mA (MAX for each channel) • Input voltage(output on) : 2.0 V (MIN) • Input voltage(output off) : 0.6 V (MAX) • Package : PG type P-DIP18-300-2.54-001 P-DIP18-300-2.54-001 TBD62783AFG FG type SOP18-P-375-1.27 FNG type SSOP18-P-225-0.65 FWG type P-SOP18-0812-1.27-001 TBD62783AFNG Pin connection (top view) TBD62783AFWG Pin connection may be simplified for explanatory purpose. P-SOP18-0812-1.27-001 Weight P-DIP18-300-2.54-001 SOP18-P-375-1.27 SSOP18-P-225-0.65 P-SOP18-0812-1.27-001 1 © 2016 TOSHIBA Corporation : 1.3g (Typ.) : 0.41g (Typ.) : 0.09g (Typ.) : 0.48g (Typ.) 2016-05-11 TBD62783APG/FG/FNG/FWG Pin explanations Pin No. Pin name Function 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 I1 I2 I3 I4 I5 I6 I7 I8 VCC GND O8 O7 O6 O5 O4 O3 O2 O1 Input pin Input pin Input pin Input pin Input pin Input pin Input pin Input pin Power supply pin GND pin Output pin Output pin Output pin Output pin Output pin Output pin Output pin Output pin Equivalent circuit (each driver) VCC Clamp INPUT OUTPUT Clamp Clamp diode Equivalent circuit may be simplified for explanatory purpose. 2 2016-05-11 TBD62783APG/FG/FNG/FWG Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Power supply voltage Output current (for each channel) Input voltage Clamp diode reverse voltage Clamp diode forward current PG (Note1) FG (Note2) Power dissipation FNG (Note3) FWG (Note4) Operating temperature Storage temperature VCC −0.5 to 50 V IOUT −500 mA VIN VR IF −0.5 to 30 50 500 1.47 0.96 0.96 1.31 −40 to 85 −55 to 150 V V mA PD Topr Tstg W °C °C Note1: Device alone. When Ta exceeds 25°C, it is necessary to do the derating with 11.8 mW/°C. Note2: Device alone. When Ta exceeds 25°C, it is necessary to do the derating with 7.7 mW/°C. Note3: On PCB (Size: 50 mm × 50 mm × 1.6 mm, Cu area: 40%, single-side glass epoxy). When Ta exceeds 25°C, it is necessary to do the derating with 7.7 mW/°C. Note4: On PCB (Size: 75 mm × 114 mm × 1.6 mm, Cu area: 20%, single-side glass epoxy). When Ta exceeds 25°C, it is necessary to do the derating with 10.48 mW/°C. 3 2016-05-11 TBD62783APG/FG/FNG/FWG Operating Ranges (Ta = −40 to 85°C) Characteristics Symbol Condition Min Typ. Max Unit Power supply voltage VCC IOUT = -100 mA 1 circuits ON, Ta = 25°C Duty = 10% tpw = 25 ms 8 circuits ON Ta = 85°C Duty = 50% Tj = 120°C 2.0 0 0 ― ― ― 50 -400 -390 V 0 ― -170 1 circuits ON, Ta = 25°C Duty = 10% tpw = 25 ms 8 circuits ON Ta = 85°C Duty = 50% Tj = 120°C 0 0 ― ― -400 -320 0 ― -140 FNG (Note2) 1 circuits ON, Ta = 25°C Duty = 10% tpw = 25 ms 8 circuits ON Ta = 85°C Duty = 50% Tj = 120°C 0 0 ― ― -400 -320 0 ― -140 FWG (Note3) 1 circuits ON, Ta = 25°C tpw = 25 ms Duty = 10% 8 circuits ON Ta = 85°C Duty = 50% Tj = 120°C 0 0 ― ― -400 -370 0 ― -160 PG (Note1) Output current (for each channel) FG (Note1) IOUT mA Input voltage (Output on) VIN (ON) IOUT = -100 mA or upper, VDS = 2.0 V 2.0 ― 25 V Input voltage (Output off) Clamp diode forward current VIN (OFF) IOUT = -100 μA or less, VDS = 2.0 V 0 ― 0.6 V IF ― ― ― 400 mA Note1: Device alone. Note2: On PCB (Size: 50 mm × 50 mm × 1.6 mm, Cu area: 40%, single-side glass epoxy). Note3: On PCB (Size: 75 mm × 114 mm × 1.6 mm, Cu area: 20%, single-side glass epoxy). 4 2016-05-11 TBD62783APG/FG/FNG/FWG Electrical Characteristics (Ta = 25°C unless otherwise noted) Characteristics Symbol Test Circuit Output leakage current Ileak 1 Output voltage (Output ON-resistance) VDS (RON) 2 Condition Min Typ. Max Unit VCC = 50 V, VIN = 0 V Ta = 85°C ― ― 1.0 μA IOUT = -350 mA VIN = 5.0 V, VCC = 5.0 V ― 0.56 (1.6) 1.14 (3.25) IOUT = -200 mA VIN = 5.0 V, VCC = 5.0 V ― 0.32 (1.6) 0.65 (3.25) IOUT = -100 mA VIN = 5.0 V, VCC = 5.0 V ― 0.16 (1.6) 0.325 (3.25) V (Ω) IIN (ON) 3 VIN = 2.0 V ― ― 0.1 mA Input current (Output off) IIN (OFF) 4 VIN = 0 V, Ta = 85°C ― ― 1.0 μA Input voltage (Output on) VIN (ON) 5 IOUT = -100 mA or upper VDS = 2.0 V ― ― 2.0 V ICC 3 VIN = 2.0 V, VCC = 50 V Output open ― ― 1.5 mA IR 6 VR = 50 V, Ta = 85°C ― ― 1.0 μA VF 7 IF = 350 mA ― ― 2.0 V ― 0.4 ― 8 VCC = 50 V RL = 125 Ω CL = 15 pF ― 2.0 ― Input current (Output on) Supply current (for each channel) Clamp diode reverse current Clamp diode forward voltage Turn−on delay tON Turn−off delay tOFF 5 μs 2016-05-11 TBD62783APG/FG/FNG/FWG Test circuit 1. Ileak 2. VDS (RON) VCC VCC VCC VDS OUTPUT INPUT OUTPUT INPUT Ileak VCC IOUT VIN GND GND RON = VDS / IOUT 3. IIN (ON), ICC 4. IIN (OFF) ICC VCC VCC VCC OUTPUT INPUT IIN(ON) VIN OUTPUT INPUT IIN(OFF) VIN GND GND 5. VIN (ON) 6. IR VCC VDS VCC VCC VCC OUTPUT INPUT OUTPUT INPUT IR IOUT VIN GND GND 7. VF VCC VR VCC OUTPUT INPUT IF GND VF Test circuit may be simplified for explanatory purpose. 6 2016-05-11 TBD62783APG/FG/FNG/FWG 8. tON, tOFF Input VCC Pulse generator Output RL (注(Note1) 1) CL (Note2) (注 2) VIH Input 50% 50% tON Output 0 50 μs tOFF 50% VOH 50% VOL Note 1: Pulse width 50 μs, Duty cycle 10% Output impedance 50 Ω, tr ≤ 5 ns, tf ≤ 10 ns, VIH = 5.0 V Note 2: CL includes the probe and the test board capacitance. Test circuit and timing chart may be simplified for explanatory purpose. Precautions for Using This IC does not include built-in protection circuits for excess current or overvoltage. Therefore, if the short−circuit between adjacent pins or between outputs, the short-to-power or ground fault has occurred, the current or voltage beyond the absolute maximum rating is impressed, and IC destroys. When designing, please consider enough in power supply line, output line and GND line. In addition, so as not to continue to flow a current that exceeds the absolute maximum rating of the IC, please insert the appropriate fuse in the power supply line. 7 2016-05-11 TBD62783APG/FG/FNG/FWG Package Dimensions P-DIP18-300-2.54-001 Unit: mm Weight: 1.3 g (Typ.) SOP18-P-375-1.27 Unit: mm Weight: 0.41 g (Typ.) 8 2016-05-11 TBD62783APG/FG/FNG/FWG Package Dimensions SSOP18-P-225-0.65 Unit: mm Weight: 0.09 g (Typ.) P-SOP18-0812-1.27-001 Unit: mm Weight: 0.48 g (Typ.) 9 2016-05-11 TBD62783APG/FG/FNG/FWG Notes on Contents 1. Pin connection Pin connection may be simplified for explanatory purpose. 2. Equivalent Circuits Equivalent circuit may be simplified for explanatory purpose. 3. Timing chart Timing charts may be simplified for explanatory purposes. 4. Test circuit Test circuit may be simplified for explanatory purpose. IC Usage Considerations Notes on handling of ICs (1) The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a moment. Do not exceed any of these ratings.Exceeding the rating(s) may cause device breakdown, damage or deterioration, and may result in injury by explosion or combustion. (2) Do not insert devices in the wrong orientation or incorrectly.Make sure that the positive and negative terminals of power supplies are connected properly.Otherwise, the current or power consumption may exceed the absolute maximum rating, and exceeding the rating(s) may cause device breakdown, damage or deterioration, and may result in injury by explosion or combustion.In addition, do not use any device inserted in the wrong orientation or incorrectly to which current is applied even just once. (3) Use an appropriate power supply fuse to ensure that a large current does not continuously flow in the case of overcurrent and/or IC failure. The IC will fully break down when used under conditions that exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal pulse noise occurs from the wiring or load, causing a large current to continuously flow and the breakdown can lead to smoke or ignition. To minimize the effects of the flow of a large current in the case of breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuit location, are required. (4) If your design includes an inductive load such as a motor coil, incorporate a protection circuit into the design to prevent device malfunction or breakdown caused by the current resulting from the inrush current at power ON or the negative current resulting from the back electromotive force at power OFF. IC breakdown may cause injury, smoke or ignition.Use a stable power supply with ICs with built-in protection functions. If the power supply is unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause injury, smoke or ignition. (5) Carefully select external components (such as inputs and negative feedback capacitors) and load components (such as speakers), for example, power amp and regulator.If there is a large amount of leakage current such as from input or negative feedback condenser, the IC output DC voltage will increase. If this output voltage is connected to a speaker with low input withstand voltage, overcurrent or IC failure may cause smoke or ignition. (The overcurrent may cause smoke or ignition from the IC itself.) In particular, please pay attention when using a Bridge Tied Load (BTL) connection-type IC that inputs output DC voltage to a speaker directly. Points to remember on handling of ICs Heat Radiation Design When using an IC with large current flow such as power amp, regulator or driver, design the device so that heat is appropriately radiated, in order not to exceed the specified junction temperature (TJ) at any time or under any condition. These ICs generate heat even during normal use. An inadequate IC heat radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown. In addition, when designing the device, take into consideration the effect of IC heat radiation with peripheral components. Back-EMF When a motor rotates in the reverse direction,stops or slows abruptly, current flows back to the motor’s power supply owing to the effect of back-EMF. If the current sink capability of the power supply is small, the device’s motor power supply and output pins might be exposed to conditions beyond the absolute maximum ratings. To avoid this problem, take the effect of back-EMF into consideration in system design. 10 2016-05-11 TBD62783APG/FG/FNG/FWG RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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