TC74HCT245AF

TC74HCT245AP/AF TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HCT245AP,TC74HCT245AF Octal Bus Transceiver (3-state) The TC74HCT245A is high speed CMOS OCTAL BUS TRANSCEIVER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. Its inputs are compatible with TTL, NMOS, and CMOS output voltage levels. It is intended for two-way asynchronous communication between data busses. The direction of data transmission is determined by the level of the DIR input. The enable input ( G ) can be used to disable the device so that the busses are effectively isolated. All inputs are equipped with protection circuits against static discharge or transient excess voltage. TC74HCT245AP TC74HCT245AF Features (Note 1) (Note 2) • • • • • • • • High speed: tpd = 10 ns (typ.) at VCC = 5 V Low power dissipation: ICC = 4 μA (max) at Ta = 25°C Compatible with TTL outputs: VIL = 0.8 V (max) VIH = 2.0 V (min) Wide interfacing ability: LSTTL, NMOS, CMOS Output drive capability: 15 LSTTL loads Symmetrical output impedance: |IOH| = IOL = 6 mA (min) Balanced propagation delays: tpLH ∼ tpHL − Pin and function compatible with 74LS245 Note 1: Do not apply a signal to any bus terminal when it is the output mode. Damage may result. Note 2: All floating (high impedance) bus terminals must have their input levels fixed by means of pull up or down resistors. Weight DIP20-P-300-2.54A SOP20-P-300-1.27A : 1.30 g (typ.) : 0.22 g (typ.) Pin Assignment 1 2007-10-01 TC74HCT245AP/AF IEC Logic Symbol Truth Table Inputs Function G L L H DIR L H X A Bus Output Input Z B Bus Input Output Output A=B B=A Z X: “H” or “L” Z: High impedance Absolute Maximum Ratings (Note 1) Characteristics Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature Symbol VCC VIN VOUT IIK IOK IOUT ICC PD Tstg Rating −0.5 to 7 −0.5 to VCC + 0.5 −0.5 to VCC + 0.5 ±20 ±20 ±35 ±75 Unit V V V mA mA mA mA mW °C 500 (DIP) (Note 2)/180 (SOP) −65 to 150 Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C shall be applied until 300 mW. 2 2007-10-01 TC74HCT245AP/AF Operating Ranges (Note) Characteristics Supply voltage Input voltage Output voltage Operating temperature Input rise and fall time Symbol VCC VIN VOUT Topr tr, tf Rating 4.5 to 5.5 0 to VCC 0 to VCC −40 to 85 Unit V V V °C ns 0 to 500 Note: The operating ranges are required to ensure the normal operation of the device. Unused inputs and bus inputs must be tied to either VCC or GND. Please connect both bus inputs and the bus outputs with VCC or GND when the I/O of the bus terminal changes by the function. In this case, please note that the output is not short-circuited. Electrical Characteristics DC Characteristics Characteristics High-level input voltage Low-level input voltage High-level output voltage Low-level output voltage 3-state output off-state current Input leakage current Quiescent supply current Symbol Test Condition ⎯ ⎯ Ta = 25°C VCC (V) 4.5 to 5.5 4.5 to 5.5 4.5 4.5 4.5 4.5 5.5 5.5 5.5 5.5 Min 2.0 ⎯ Ta = −40 to 85°C Max ⎯ Typ. ⎯ ⎯ Min 2.0 ⎯ Max ⎯ Unit VIH VIL VOH VIN = VIH or VIL VIN = VIH or VIL V V V V 0.8 ⎯ ⎯ 0.8 ⎯ ⎯ IOH = −20 μA IOH = −6 mA IOL = 20 μA IOL = 6 mA 4.4 4.18 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 4.5 4.31 0.0 0.17 ⎯ ⎯ ⎯ ⎯ 4.4 4.13 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ VOL 0.1 0.26 ±0.5 ±0.1 0.1 0.33 ±5.0 ±1.0 IOZ IIN ICC IC VIN = VIH or VIL VOUT = VCC or GND VIN = VCC or GND VIN = VCC or GND Per input: VIN = 0.5 V or 2.4 V Other input: VCC or GND μA μA μA 4.0 2.0 40.0 2.9 mA 3 2007-10-01 TC74HCT245AP/AF AC Characteristics (input: tr = tf = 6 ns) Characteristics Symbol tTLH tTHL tpLH tpHL Test Condition CL (pF) VCC (V) ⎯ Ta = 25°C Min ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Ta = −40 to 85°C Max 12 11 22 20 30 27 30 27 38 34 30 27 10 ⎯ ⎯ Typ. 7 6 13 11 18 16 19 16 24 22 17 16 5 13 41 Min ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Max 15 14 28 25 38 34 38 34 48 43 38 34 10 ⎯ ⎯ Unit Output transition time 50 4.5 5.5 4.5 5.5 4.5 5.5 4.5 5.5 4.5 5.5 4.5 5.5 ns 50 ⎯ Propagation delay time ns 150 3-state output enable time tpZL tpZH 50 RL = 1 kΩ 150 ns 3-state output disable time Input capacitance Output capacitance Power dissipation capacitance tpLZ tpHZ CIN CI/O CPD (Note) RL = 1 kΩ DIR, G An, Bn ⎯ 50 ns pF pF pF ⎯ Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD･VCC･fIN + ICC/8 (per bit) 4 2007-10-01 TC74HCT245AP/AF Package Dimensions Weight: 1.30 g (typ.) 5 2007-10-01 TC74HCT245AP/AF Package Dimensions Weight: 0.22 g (typ.) 6 2007-10-01 TC74HCT245AP/AF RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2007-10-01