TC74VHC32FT

TC74VHC32F/FT/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHC32F,TC74VHC32FT,TC74VHC32FK Quad 2-Input OR Gate TC74VHC32F The TC74VHC32 is an advanced high speed CMOS 2-INPUT OR GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 4 stages including buffer output, which provide high noise immunity and stable output. An input protection circuit ensures that 0 to 5.5 V can be applied to the input pins without regard to the supply voltage. This device can be used to interface 5 V to 3 V systems and two supply systems such as battery back up. This circuit prevents device destruction due to mismatched supply and input voltages. TC74VHC32FT Features • • • • • • • • High speed: tpd = 3.8 ns (typ.) at VCC = 5 V Low power dissipation: ICC = 2 μA (max) at Ta = 25°C High noise immunity: VNIH = VNIL = 28% VCC (min) Power down protection is provided on all inputs. Balanced propagation delays: tpLH ∼ tpHL − Wide operating voltage range: VCC (opr) = 2 V to 5.5 V Low noise: VOLP = 0.8 V (max) Pin and function compatible with 74ALS32 TC74VHC32FK Weight SOP14-P-300-1.27A TSSOP14-P-0044-0.65A VSSOP14-P-0030-0.50 : 0.18 g (typ.) : 0.06 g (typ.) : 0.02 g (typ.) 1 2012-02-29 TC74VHC32F/FT/FK Pin Assignment IEC Logic Symbol 1A 1B 2A 2B 3A 3B 4A 4B (1) (2) (4) (5) (9) (10) (12) (13) >1 1A 1B 1Y 2A 2B 2Y GND 1 2 3 4 5 6 7 (top view) 14 13 12 11 10 9 8 VCC 4B 4A 4Y 3B 3A 3Y (3) (6) (8) (11) 1Y 2Y 3Y 4Y Truth Table A H L H L B H H L L Y H H H L Absolute Maximum Ratings (Note) Characteristics Supply voltage range DC input voltage DC output voltage Input diode current Output diode current DC output current DC VCC/ground current Power dissipation Storage temperature Symbol VCC VIN VOUT IIK IOK IOUT ICC PD Tstg Rating −0.5 to 7.0 −0.5 to 7.0 −0.5 to VCC + 0.5 −20 ±20 ±25 ±50 180 −65 to 150 Unit V V V mA mA mA mA mW °C Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2 2012-02-29 TC74VHC32F/FT/FK Operating Ranges (Note) Characteristics Supply voltage Input voltage Output voltage Operating temperature Input rise and fall time Symbol VCC VIN VOUT Topr dt/dv Rating 2.0 to 5.5 0 to 5.5 0 to VCC −40 to 85 0 to 100 (VCC = 3.3 ± 0.3 V) 0 to 20 (VCC = 5 ± 0.5 V) Unit V V V °C ns/V Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. Electrical Characteristics DC Characteristics Test Condition Characteristics Symbol VCC (V) 2.0 High-level input voltage VIH ― 3.0 to 5.5 2.0 Low-level input voltage VIL ― 3.0 to 5.5 2.0 High-level output voltage VIN = VIH or VIL IOH = −50 μA 3.0 4.5 IOH = −4 mA IOH = −8 mA 3.0 4.5 2.0 IOL = 50 μA Low-level output voltage VOL VIN = VIL IOL = 4 mA IOL = 8 mA Input leakage current Quiescent supply current IIN ICC VIN = 5.5 V or GND VIN = VCC or GND 3.0 4.5 3.0 4.5 0 to 5.5 5.5 ― ― 1.9 2.9 4.4 2.58 3.94 ― ― ― ― ― ― ― ― ― 2.0 3.0 4.5 ― ― 0.0 0.0 0.0 ― ― ― ― Min 1.50 VCC × 0.7 Ta = 25°C Typ. ― ― Max ― ― Ta = −40 to 85°C Min 1.50 VCC × 0.7 Max ― ― Unit V 0.50 VCC × 0.3 ― ― ― ― ― 0.1 0.1 0.1 0.36 0.36 ±0.1 2.0 ― ― 1.9 2.9 4.4 2.48 3.80 ― ― ― ― ― ― ― 0.50 VCC × 0.3 ― ― ― ― ― 0.1 0.1 0.1 0.44 0.44 ±1.0 20.0 μA μA V V V VOH 3 2012-02-29 TC74VHC32F/FT/FK AC Characteristics (input: tr = tf = 3 ns) Characteristics Symbol Test Condition VCC (V) 3.3 ± 0.3 ― 5.0 ± 0.5 ― (Note) CL (pF) 15 50 15 50 Min ― ― ― ― ― ― Ta = 25°C Typ. 5.5 8.0 3.8 5.3 4 14 Max 7.9 11.4 5.5 7.5 10 ― Ta = −40 to 85°C Min 1.0 1.0 1.0 1.0 ― ― Max 9.5 13.0 6.5 8.5 10 ― pF pF ns Unit Propagation delay time tpLH tpHL Input capacitance Power dissipation capacitance CIN CPD Note: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC (opr) = CPD·VCC·fIN + ICC/4 (per gate) Noise Characteristics (input: tr = tf = 3 ns) Characteristics Quiet output maximum dynamic VOL Quiet output minimum dynamic VOL Minimum high level dynamic input voltage Maximum low level dynamic input voltage Symbol VOLP VOLV VIHD VILD CL = 50 pF CL = 50 pF CL = 50 pF CL = 50 pF Test Condition VCC (V) 5.0 5.0 5.0 5.0 Ta = 25°C Typ. 0.3 −0.3 ― ― Limit 0.8 −0.8 3.5 1.5 Unit V V V V Input Equivalent Circuit INPUT 4 2012-02-29 TC74VHC32F/FT/FK Package Dimensions Weight: 0.18 g (typ.) 5 2012-02-29 TC74VHC32F/FT/FK Package Dimensions Weight: 0.06 g (typ.) 6 2012-02-29 TC74VHC32F/FT/FK Package Dimensions Weight: 0.02 g (typ.) 7 2012-02-29 TC74VHC32F/FT/FK RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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