TC75S58F

TC75S58F/FU/FE TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TC75S58F,TC75S58FU,TC75S58FE Single Comparator The TC75S58F/TC75S58FU/TC75S58FE is a CMOS generalpurpose single comparator. The device can operate off a single power supply and draws a lower supply current than a conventional bipolar general-purpose comparator. This device’s open-drain output stage can be wire-ORed with those of other open-drain output circuits. TC75S58F Features • • • • • • Low-current power supply Single power supply operation Wide common mode input voltage range : VSS~VDD − 0.9 V Open drain output circuit Low input bias current Small package TC75S58FU : IDD = 10 μA (typ.) TC75S58FE Weight SSOP5-P-0.95 : 0.014 g (typ.) SSOP5-P-0.65A : 0.006 g (typ.) SON5-P-0.50 : 0.003 g (typ.) Marking (top view) 5 4 Pin Connection (top view) VDD 5 OUT 4 TE 1 2 3 1 IN (−) 2 VSS 3 IN (+) 1 2007-11-01 TC75S58F/FU/FE Absolute Maximum Ratings (Ta = 25°C) Characteristics Supply voltage Differential input voltage Input voltage Output current Power dissipation TC75S58F/FU TC75S58FE Symbol VDD, VSS DVIN VIN IO PD Topr Tstg Rating ±3.5 or 7 ±7 VSS~VDD ±35 200 100 −40~85 −55~125 Unit V V V mA mW °C °C Operating temperature Storage temperature Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: This device’s CMOS structure makes it prone to latch-up. To prevent latch-up, please take the following precautions: • • Ensure that no I/O pin’s voltage level ever exceeds VDD or drops below VSS. In addition, check the power-on timing. Do not subject the device to excessive noise. 2 2007-11-01 TC75S58F/FU/FE Electrical Characteristics (VDD = 5 V, VSS = GND, Ta = 25°C) Characteristics Input offset voltage Input offset current Input bias current Common mode input voltage Supply current Voltage gain Sink current Output leak current Output voltage Operating supply voltage Propagation delay time (turn on) Symbol VIO IIO II CMVIN IDD (Note) GV Isink ILEAK VOL VDD tPLH (1) tPLH (2) tPHL (1) tPHL (2) tTLH tTHL Test Circuit ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ VOL = 0.5 V VO = 5 V Isink = 5.0 mA ⎯ Over drive = 100 mV TTL step input Over drive = 100 mV TTL step input Over drive = 100 mV Over drive = 100 mV Test Condition ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Min ⎯ ⎯ ⎯ 0 ⎯ ⎯ 13 ⎯ ⎯ 1.8 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ±1 1 1 ⎯ 11 94 25 5 0.1 ⎯ 800 620 230 350 190 6 Max ±7 ⎯ ⎯ 4.1 22 ⎯ ⎯ ⎯ 0.3 7.0 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Unit mV pA pA V μA dB mA nA V V ns Propagation delay time (turn off) ⎯ ⎯ ⎯ ns Response time ns Electrical Characteristics (VDD = 3 V, VSS = GND, Ta = 25°C) Characteristics Input offset voltage Input offset current Input bias current Common mode input voltage Supply current Sink current Output leak current Output voltage Propagation delay time (turn on) Propagation delay time (turn off) Response time Symbol VIO IIO II CMVIN IDD (Note) Isink ILEAK VOL tPLH tPHL tTLH tTHL Test Circuit ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ VOL = 0.5 V VO = 3 V Isink = 5.0 mA Over drive = 100 mV Over drive = 100 mV Over drive = 100 mV Over drive = 100 mV Test Condition ⎯ ⎯ ⎯ ⎯ ⎯ Min ⎯ ⎯ ⎯ 0 ⎯ 6 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ±1 1 1 ⎯ 10 18 5 0.15 590 230 170 5 Max ±7 ⎯ ⎯ 2.1 20 ⎯ ⎯ 0.35 ⎯ ⎯ ⎯ ⎯ Unit mV pA pA V μA mA nA V ns ns ns ⎯ ⎯ Note: This device’s current consumption increases as its operating frequency increases. Note that the power dissipation should not exceed the allowable power dissipation. 3 2007-11-01 TC75S58F/FU/FE IDD – f 1000 VDD = 3 V VSS = GND (μA) Ta = 25°C 100 Supply current IDD 10 1 0.001 0.01 0.1 1 10 100 1000 Frequency f (kHz) IDD – f 1000 VDD = 5 V VSS = GND (μA) Ta = 25°C 100 Supply current IDD 10 1 0.001 0.01 0.1 1 10 100 1000 Frequency f (kHz) 4 2007-11-01 TC75S58F/FU/FE VOL – Isink 3.0 VDD = 3 V 2.5 VSS = GND 5.0 4.5 4.0 VDD = 5 V VSS = GND Ta = 25°C VOL – Isink (V) (V) Output voltage VOL 15 20 25 30 35 40 Ta = 25°C 2.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 Output voltage VOL 1.5 1.0 0.5 0.0 0 5 10 0.0 0 5 10 15 20 25 30 35 40 Sink current Isink (mA) Sink current Isink (mA) PD – Ta 300 This data was obtained from an unmounted standalone IC. If the IC is mounted on a PCB, its power dissipation will be greater. Note that, depending on the PCB’s thermal characteristics, the curves may differ substantially from those shown. (mW) Power dissipation PD 200 100 0 −40 0 40 80 120 Ambient temperature Ta (°C) 5 2007-11-01 TC75S58F/FU/FE Package Dimensions Weight: 0.014 g (typ.) 6 2007-11-01 TC75S58F/FU/FE Package Dimensions Weight: 0.006 g (typ.) 7 2007-11-01 TC75S58F/FU/FE Package Dimensions Weight: 0.003 g (typ.) 8 2007-11-01 TC75S58F/FU/FE RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN GENERAL • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 9 2007-11-01