TCR3UG12A,LF

TCR3UG series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR3UG series Ultra low quiescent current, Fast Load Transient 300 mA CMOS Low Dropout Regulator in ultra small package 1. Description The TCR3UG series are CMOS general-purpose single-output voltage regulators with an on/off control input, featuring ultra low quiescent bias current and low dropout voltage. These voltage regulators are available in fixed output voltages between 0.8 V and 5.0 V and capable of driving up to 300 mA. They feature Over-current protection, Thermal Shutdown function and Auto-discharge option. The TCR3UG series is offered in the ultra small plastic mold package WCSP4F (0.645 mm x 0.645 mm (typ.); t 0.33 mm (max)) and has a low dropout voltage of 155 mV (3.3 V output, IOUT = 300 mA). As small ceramic input and output capacitors 1 μF can be used with the TCR3UG series, these devices are ideal for portable applications that require high-density board assembly such as cellular phones, IoT equipment and wearable devices. WCSP4F Weight: 0.26 mg (typ.) 2. Applications Power IC developed for portable applications, IoT equipment and wearable devices 3. Features • Ultra small package WCSP4F (0.645 mm x 0.645 mm (typ.); t 0.33 mm (max)). • Low quiescent bias current (IB(ON) = 0.34 μA (typ.) at IOUT = 0 mA, output voltage up to 1.5 V) • High ripple rejection ratio 70 dB at 0.8 V-output • Fast load transient response ± 60 mV at 0.8 V-output, IOUT = 1 mA ⇔ 50 mA • Low dropout voltage • Wide range output voltage line up (VOUT = 0.8 to 5.0 V) • High VOUT accuracy ± 1.0 % • Auto-discharge (TCR3UGxxA series)/ Non-discharge (TCR3UGxxB series) line up • Overcurrent protection • Thermal shutdown function VDO =VIN-VOUT = 140 mV (typ.) at 3.3 V-output, IOUT = 300 mA (1.8 V ≤ VOUT) • Inrush current protection circuit • Pull down connection between CONTROL and GND • Ceramic capacitors can be used (CIN = 1 μF, COUT = 1 μF) Start of commercial production 2017-10 © 2018-2022 Toshiba Electronic Devices & Storage Corporation 1 2022-01-11 TCR3UG series 4. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN -0.3 to 6.0 V Control voltage VCT -0.3 to VIN + 0.3 ≤ 6.0 V Output voltage VOUT -0.3 to VIN + 0.3 ≤ 6.0 V Power dissipation PD 800 mW Junction temperature Tj 150 °C Tstg −55 to 150 °C Storage temperature range (Note1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Rating at mounting on a board Glass epoxy (FR4) board dimension: 40 mm x 40 mm (both sides of board), t = 1.6 mm Metal pattern ratio: a surface approximately 50 %, the reverse side approximately 50 % Through hole : diameter 0.5 mm x 24 5. Operating Ranges Characteristics Symbol Rating Unit Input voltage VIN 1.5 to 5.5 Control voltage VCT 0 to VIN V Output voltage VOUT 0.8 to 5.0 V Output current IOUT Operating Temperature Topr -40 to 85 °C COUT ≥ 1.0 μF ― Output Capacitance Input Capacitance DC (Note 2) 300 (Note 3) ≥ 1.0 μF CIN V mA ― Note 2: IOUT = 1 mA. Please refer to Dropout Voltage (Page 13) and use it within Absolute Maximum Ratings Junction temperature and Operating Temperature Ranges. Note 3: Do not operate at or near the maximum ratings of operating ranges for extended periods of time. Exposure to such conditions may adversely impact product reliability and results in failures not covered by warranty. 6. Pin Assignment (top view) 1 2 1 2 A VIN VOUT B CONTROL GND A B © 2018-2022 Toshiba Electronic Devices & Storage Corporation 2 2022-01-11 TCR3UG series 7. List of Products Number, Output voltage and Marking Product No. Output voltage(V) TCR3UG08A Auto discharge Auto discharge Marking Product No. Output voltage(V) 0.8 A TCR3UG08B 0.8 A TCR3UG085A 0.85 B TCR3UG085B 0.85 B TCR3UG09A 0.9 C TCR3UG09B 0.9 C TCR3UG095A 0.95 D TCR3UG095B 0.95 D TCR3UG10A 1.0 E TCR3UG10B 1.0 E TCR3UG105A 1.05 F TCR3UG105B 1.05 F TCR3UG11A 1.1 H TCR3UG11B 1.1 H TCR3UG115A 1.15 J TCR3UG115B 1.15 J TCR3UG12A 1.2 K TCR3UG12B 1.2 K TCR3UG13A 1.3 L TCR3UG13B 1.3 L TCR3UG135A 1.35 M TCR3UG135B 1.35 M TCR3UG15A 1.5 N TCR3UG15B 1.5 N TCR3UG175A 1.75 P TCR3UG175B 1.75 P TCR3UG18A 1.8 R TCR3UG18B 1.8 R TCR3UG1825A 1.825 G TCR3UG185B 1.85 S TCR3UG185A 1.85 S TCR3UG19B 1.9 Yes No Marking** T TCR3UG19A 1.9 T TCR3UG25B 2.5 U TCR3UG25A 2.5 U TCR3UG26B 2.6 V TCR3UG26A 2.6 V TCR3UG27B 2.7 W TCR3UG27A 2.7 W TCR3UG28B 2.8 X TCR3UG28A 2.8 X TCR3UG285B 2.85 Y TCR3UG285A 2.85 Y TCR3UG30B 3.0 0 TCR3UG30A 3.0 0 TCR3UG31B 3.1 1 TCR3UG31A 3.1 1 TCR3UG32B 3.2 2 TCR3UG32A 3.2 2 TCR3UG33B 3.3 3 TCR3UG33A 3.3 3 TCR3UG35B 3.5 4 TCR3UG35A 3.5 4 TCR3UG36B 3.6 5 TCR3UG36A 3.6 5 TCR3UG41B 4.1 9 TCR3UG41A 4.1 9 TCR3UG42B 4.2 6 TCR3UG42A 4.2 6 TCR3UG45B 4.5 7 TCR3UG45A 4.5 7 TCR3UG50B 5.0 8 TCR3UG50A 5.0 8 **Marking is rotated 90 degrees to the left. Top Marking (top view) Example: TCR3UG08A (0.8 V output) VOUT Example: TCR3UG08B (0.8 V output) GND VOUT CONTROL VIN VIN A A GND © 2018-2022 Toshiba Electronic Devices & Storage Corporation 3 CONTROL 2022-01-11 TCR3UG series 8. Block Diagram V OUT V IN Current Limit Thermal Shutdown + * CONTROL *Auto-discharge version (TCR3UGxxA series) only Control Logic Pull down GND © 2018-2022 Toshiba Electronic Devices & Storage Corporation 4 2022-01-11 TCR3UG series 9. Electrical Characteristics (Unless otherwise specified, VIN = VOUT+1 V (VOUT>1.5V), VIN=2.5V (VOUT≤1.5V), IOUT = 50 mA, CIN = COUT = 1 μF) Tj = -40 to 85°C (Note 9) Tj = 25°C Characteristics Symbol Test Condition Unit Min Typ. Max Min Max VOUT < 1.8 V -18 ― +18 ― ― mV 1.8 V ≤ VOUT -1.0 ― +1.0 ― ― % 1.5 ― 5.5 1.5 5.5 V VOUT IOUT = 50 mA (Note 4) VIN IOUT = 1 mA Line regulation Reg･line IOUT = 1 mA (Note 5) ― 1 15 ― ― mV Load regulation Reg･load 1 mA ≤ IOUT ≤ 300 mA (Note 6) ― 10 30 ― ― mV IB(ON1) IOUT = 0 mA, VOUT ≤ 1.5V (Note 7) ― 0.34 ― ― 0.58 μA IB(ON2) IOUT = 0 mA, 1.75 V ≤ VOUT ≤ 5 V ― 0.38 ― ― 0.68 μA Output voltage accuracy Input voltage Quiescent current Stand-by current (Note 7) IB (OFF1) VCT = 0 V, VIN = 2.5 V ― 0.03 ― ― 0.16 μA IB (OFF2) VCT = 0 V, VIN = 5.5 V ― 0.03 ― ― 0.20 μA ― 0.1 ― ― ― μA VOUT = 1.8 V ― 335 ― ― 457 mV VOUT = 3.3 V ― 140 ― ― 273 mV ― Control pull down current ICT Dropout voltage VDO IOUT = 300 mA Output noise voltage VNO IOUT = 10 mA, 10 Hz ≤ f ≤ 100 kHz, Ta = 25°C (Note 6) ― 50 ― ― ― μVrms Ripple rejection ratio R.R. IOUT = 10 mA, f = 1 kHz, VRipple = 200 mVp-p, Ta = 25°C (Note 6) ― 70 ― ― ― dB IOUT = 1 mA  50 mA (Note 8) ― -60 ― ― ― mV IOUT = 50 mA  1 mA (Note 8) ― +60 ― ― ― mV −40°C ≤ Topr ≤ 85°C ― 75 ― ― ― ppm/°C Load transient response ⊿VOUT Temperature coefficient TCVO Control voltage (ON) VCT (ON) ― 1.0 ― 5.5 1.0 5.5 V Control voltage (OFF) VCT (OFF) ― 0 ― 0.4 0 0.4 V RSD ― ― 10 ― ― ― Ω Discharge on resistance Note 4: stable state with fixed IOUT condition Note 5: VOUT ≤ 1.5 V, 2.5 V ≤ VIN ≤ 5.5 V 1.75 V ≤ VOUT ≤ 4.2 V, VOUT + 1 V ≤ VIN ≤ 5.5 V VOUT = 4.5 V, VOUT = 5.0 V, not applicable Note 6: VOUT = 0.8V Note 7: except Control pull down current (ICT) Note 8: VOUT = 0.8 V, VIN = 3.3 V Note 9: This parameter is warranted by design © 2018-2022 Toshiba Electronic Devices & Storage Corporation 5 2022-01-11 TCR3UG series 10. Dropout voltage (IOUT = 300 mA, CIN = COUT = 1 μF) Output voltages Symbol 0.8 V ≤ VOUT < 0.9 V 0.9 V ≤ VOUT < 1.0 V 1.0 V ≤ VOUT < 1.1 V 1.1 V ≤ VOUT < 1.2 V 1.2 V ≤ VOUT < 1.3 V 1.3 V ≤ VOUT < 1.5 V 1.5 V ≤ VOUT < 1.6 V 1.6 V ≤ VOUT < 1.8 V VDO 1.8 V ≤ VOUT < 2.0 V 2.0 V ≤ VOUT < 2.5 V 2.5 V ≤ VOUT < 3.0 V 3.0 V ≤ VOUT < 3.6 V 3.6 V ≤ VOUT < 4.5 V 4.5 V ≤ VOUT ≤ 5.0 V Note 10: Min Typ. Tj = 25°C Max (Note 10) 1025 1257 930 1157 835 1057 740 957 660 857 580 757 450 617 400 537 335 457 260 405 185 327 140 273 130 228 120 195 ― ― ― ― ― ― ― ― ― ― ― ― ― ― Unit mV Tj = -40 to 85 °C. This parameter is warranted by design © 2018-2022 Toshiba Electronic Devices & Storage Corporation 6 2022-01-11 TCR3UG series 11. Application Note 11.1. Example of Application Circuit CONTROL GND VOUT VIN 1 μF 1 μF CONTROL voltage VOUT voltage HIGH ON LOW OFF OPEN OFF The figure above shows the Example of configuration for using a Low-Dropout regulator. Insert a capacitor at VOUT and VIN pins for stable input/output operation. (Ceramic capacitors can be used). 11.2. Power Dissipation Board-mounted power dissipation ratings are available in the Absolute Maximum Ratings table. Power dissipation is measured on the board condition shown below. [The Board Condition] Board material: Glass epoxy (FR4) Board dimension: 40 mm x 40 mm (both sides of board), t = 1.6 mm Metal pattern ratio: a surface approximately 50 %, the reverse side approximately 50 % Through hole: diameter 0.5 mm x 24 Power dissipation PD (mW) 1000 800 600 400 200 0 −40 0 40 80 120 Ambient temperature Ta (°C) © 2018-2022 Toshiba Electronic Devices & Storage Corporation 7 2022-01-11 TCR3UG series 11.3. Attention in Use ● Output Capacitors Ceramic capacitors can be used for these devices. However, because of the type of the capacitors, there might be unexpected thermal features. Please consider application condition for selecting capacitors. And Toshiba recommends the ESR of ceramic capacitor is under 10 Ω. For stable operation, we recommend over 1 μF. ● Mounting The long distance between IC and input output capacitor might affect phase compensation by impedance in wire and inductor. For stable power supply, input output capacitor need to mount near IC as much as possible. Also VIN and GND pattern need to be large and make the wire impedance small as possible. ● Permissible Loss Please have enough design patterns for expected maximum permissible loss. And under consideration of ambient temperature, input voltage, output current etc., we recommend proper dissipation ratings for maximum permissible loss; in general maximum dissipation rating is 70 to 80 %. ● Over current Protection and Thermal shutdown function Over current protection and Thermal shutdown function are designed in these products, but these are not designed to constantly ensure the suppression of the device within operation limits. Depending on the condition during actual usage, it could affect the electrical characteristic specification and reliability. Also note that if output pins and GND pins are not completely shorted out, these products might break down. When using these products, please read through and understand the concept of dissipation for absolute maximum ratings from the above mention or our ‘Semiconductor Reliability Handbook’. Then use these products under absolute maximum ratings in any condition. Furthermore, Toshiba recommends inserting failsafe system into the design. © 2018-2022 Toshiba Electronic Devices & Storage Corporation 8 2022-01-11 TCR3UG series 12. Representative Typical Characteristics 12.1. Output Voltage vs. Input Voltage VOUT = 1.2 V VOUT = 0.8 V 1.6 CIN = 1μF, COUT = 1μF, Ta = 25℃ IOUT = 1 mA IOUT = 1 mA Output voltage VOUT (V) Output voltage VOUT (V) 1 0.8 0.6 IOUT = 300 mA 0.4 0.2 1.2 0.8 IOUT = 300 mA 0.4 0 0 0 1 2 3 4 Input voltage VIN (V) 0 5 1 VOUT = 1.8 V CIN = 1μF, COUT = 1μF, Ta = 25℃ IOUT = 1 mA 2 1.5 IOUT = 300 mA 1 2 3 4 Input voltage VIN (V) 5 VOUT = 2.8 V 3.5 Output voltage VOUT (V) Output voltage VOUT (V) 2.5 0.5 0 CIN = 1μF, COUT = 1μF, Ta = 25℃ 3 IOUT = 1 mA 2.5 2 IOUT = 300 mA 1.5 1 0.5 0 0 1 2 3 4 Input voltage VIN (V) 5 0 1 6 Output voltage VOUT (V) CIN = 1μF, COUT = 1μF, Ta = 25℃ IOUT = 1 mA 3 IOUT = 300 mA 2 2 3 4 Input voltage VIN (V) 5 VOUT = 5.0 V VOUT = 3.3 V 4 Output voltage VOUT (V) CIN = 1μF, COUT = 1μF, Ta = 25℃ 1 CIN = 1μF, COUT = 1μF, Ta = 25℃ 5 IOUT = 1 mA 4 3 IOUT = 300 mA 2 1 0 0 0 1 2 3 4 Input voltage VIN (V) © 2018-2022 Toshiba Electronic Devices & Storage Corporation 0 5 9 1 2 3 4 Input voltage VIN (V) 5 2022-01-11 TCR3UG series 12.2. Output Voltage vs. Output Current VOUT = 0.8 V 100 1000 CIN = 1μF, COUT = 1μF, Ta = 25℃ Quiescent current IBON (μA) Quiescent current IBON (μA) 1000 VOUT = 1.2 V IOUT falling 10 1 IOUT rising 0.1 0.0001 0.001 0.01 0.1 1 Output current IOUT (mA) 10 100 1 IOUT rising 0.1 0.0001 0.001 0.01 0.1 1 Output current IOUT (mA) CIN = 1μF, COUT = 1μF, Ta = 25℃ IOUT falling 10 1 IOUT rising 0.1 0.0001 0.001 0.01 0.1 1 Output current IOUT (mA) 10 100 1 IOUT rising 0.1 0.0001 0.001 0.01 0.1 1 Output current IOUT (mA) 1000 CIN = 1 μF, COUT = 1 μF, Ta = 25℃ IOUT falling 10 1 IOUT rising 0.1 0.0001 0.001 0.01 0.1 1 Output current IOUT (mA) © 2018-2022 Toshiba Electronic Devices & Storage Corporation IOUT falling 10 VOUT = 5.0 V Quiescent current IBON (μA) Quiescent current IBON (μA) 100 CIN = 1μF, COUT = 1μF, Ta = 25℃ 10 VOUT = 3.3 V 1000 10 VOUT = 2.8 V 1000 Quiescent current IBON (μA) Quiescent current IBON (μA) 100 IOUT falling 10 VOUT = 1.8 V 1000 CIN = 1μF, COUT = 1μF, Ta = 25℃ 10 10 100 CIN = 1μF, COUT = 1μF, Ta = 25℃ IOUT falling 10 1 IOUT rising 0.1 0.0001 0.001 0.01 0.1 1 Output current IOUT (mA) 10 2022-01-11 TCR3UG series 12.3. Quiescent Current vs. Input Voltage VOUT = 1.2 V VOUT = 0.8 V 1.0 CIN = 1μF, COUT = 1μF, Ta = 25℃ Quiescent current IBON (μA) Quiescent current IBON (μA) 1.0 0.8 0.6 0.4 0.2 0.0 CIN = 1μF, COUT = 1μF, Ta = 25℃ 0.8 0.6 0.4 0.2 0.0 1.5 2.5 3.5 4.5 Input voltage VIN (V) 5.5 1.5 2.5 3.5 4.5 Input voltage VIN (V) VOUT = 1.8 V VOUT = 2.8 V 1.0 CIN = 1μF, COUT = 1μF, Ta = 25℃ Quiescent current IBON (μA) Quiescent current IBON (μA) 1.0 0.8 0.6 0.4 0.2 0.0 1.5 2.5 3.5 4.5 Input voltage VIN (V) CIN = 1μF, COUT = 1μF, Ta = 25℃ 0.8 0.6 0.4 0.2 0.0 5.5 1.5 2.5 3.5 4.5 Input voltage VIN (V) 1.0 CIN = 1μF, COUT = 1μF, Ta = 25℃ Quiescent current IBON (μA) Quiescent current IBON (μA) 5.5 VOUT = 5.0 V VOUT = 3.3 V 1.0 5.5 0.8 0.6 0.4 0.2 0.0 CIN = 1μF, COUT = 1μF, Ta = 25℃ 0.8 0.6 0.4 0.2 0.0 1.5 2.5 3.5 4.5 Input voltage VIN (V) © 2018-2022 Toshiba Electronic Devices & Storage Corporation 5.5 1.5 2.5 3.5 4.5 5.5 Input voltage VIN (V) 11 2022-01-11 TCR3UG series 12.4. Dropout Voltage vs. Output current VOUT = 1.2 V VOUT = 0.8 V CIN = 1μF, COUT = 1μF, Ta = 25℃ Dropout voltage VDO (mV) Dropout voltage VDO (mV) 1200 800 1000 800 600 400 200 CIN = 1μF, COUT = 1μF, Ta = 25℃ 600 400 200 0 0 0 100 200 Output current IOUT (mA) 300 0 CIN = 1μF, COUT = 1μF, Ta = 25℃ 300 200 100 0 0 100 200 Output current IOUT (mA) CIN = 1μF, COUT = 1μF, Ta = 25℃ 200 150 100 50 0 300 0 150 CIN = 1μF, COUT = 1μF, Ta = 25℃ Dropout voltage VDO (mV) Dropout voltage VDO (mV) 100 200 Output current IOUT (mA) 300 VOUT = 5.0 V VOUT = 3.3 V 200 300 VOUT = 2.8 V 250 Dropout voltage VDO (mV) Dropout voltage VDO (mV) VOUT = 1.8 V 400 100 200 Output current IOUT (mA) 150 100 50 0 CIN = 1μF, COUT = 1μF, Ta = 25℃ 120 90 60 30 0 0 100 200 300 Output current IOUT (mA) © 2018-2022 Toshiba Electronic Devices & Storage Corporation 12 0 100 200 Output current IOUT (mA) 300 2022-01-11 TCR3UG series 12.5. Dropout Voltage vs. Temprature VOUT = 1.0 V CIN = 1 μF, COUT = 1 μF 900 800 IOUT = 300 mA 700 600 500 400 300 IOUT = 150 mA IOUT = 50 mA VOUT = 1.8 V 400 Dropout voltage VDO (mV) Dropout voltage VDO (mV) 1000 200 100 CIN = 1 μF, COU = 1 μF 350 300 IOUT = 300 mA 250 200 150 IOUT = 50 mA 100 IOUT = 150 mA 50 0 0 -50 0 Temprature Ta 50 (℃) -50 100 0 Temprature Ta 50 (℃) 100 VOUT = 2.8 V Dropout voltage VDO (mV) 400 CIN = 1 μF, COUT = 1 μF 350 300 IOUT = 300 mA 250 200 150 IOUT = 150 mA 100 IOUT = 50 mA 50 0 -50 0 Temprature 50 Ta 100 (℃) © 2018-2022 Toshiba Electronic Devices & Storage Corporation 13 2022-01-11 TCR3UG series 12.6. Ripple Rejection Ratio vs. Frequency VOUT = 0.8V 90 80 70 60 50 40 30 20 VIN = 2.5 V ,VIN ripple = 200 mVp−p CIN = none, COUT = 1 μF IOUT = 10 mA, Ta = 25°C 10 0 10 100 1000 90 80 70 60 50 40 30 20 10 0 10000 100000 VIN = 2.8 V ,VIN ripple = 200 mVp−p CIN = none, COUT = 1 μF IOUT = 10 mA, Ta = 25°C 10 Frequency f (Hz) 100 1000 10000 100000 Frequency f (Hz) VOUT = 2.8V 100 Ripple Rejection Ratio (dB) VOUT = 1.8V 100 Ripple Rejection Ratio (dB) Ripple Rejection Ratio (dB) 100 90 80 70 60 50 40 30 20 10 VIN = 3.8 V ,VIN ripple = 200 mVp−p CIN = none, COUT = 1 μF IOUT = 10 mA, Ta = 25°C 0 10 100 1000 10000 100000 Frequency f (Hz) © 2018-2022 Toshiba Electronic Devices & Storage Corporation 14 2022-01-11 TCR3UG series 12.7. Load Transient Response VOUT = 2.8V VOUT = 2.8V VOUT: 50 mV/div VOUT: 200 mV/div IOUT: 50 mA/div IOUT: 10 mA/div 50 μs/div VIN = 3.8 V ,VCT = 1 V, COUT = 1 μF 50 μs/div IOUT = 1 mA ⇔ 50 mA, Ta = 25°C VIN = 3.8 V ,VCT = 1 V, COUT = 1 μF IOUT = 0 mA ⇔ 10 mA, Ta = 25°C 12.8. tON Response VOUT = 2.8V VOUT = 2.8V VIN = 3.8 V , COUT = 1 μF VIN = 3.8 V , COUT = 1 μF IOUT = 300 mA, Ta = 25°C IOUT = 0 mA, Ta = 25°C VCT: 1V/div VCT: 1V/div VOUT: 2V/div VOUT: 2V/div IIN: 200mA/div IIN: 200mA/div 500 μs/div 500 μs/div 12.9. tOFF Response (Auto-discharge) VOUT = 2.8V VOUT = 2.8V VIN = 3.8 V , COUT = 1 μF VIN = 3.8 V , COUT = 1 μF IOUT = 0 mA, Ta = 25°C IOUT = 300 mA, Ta = 25°C VCT: 1V/div VCT: 1V/div VOUT: 2V/div VOUT: 2V/div IIN: 200mA/div IIN: 200mA/div 500 μs/div 500 μs/div Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2018-2022 Toshiba Electronic Devices & Storage Corporation 15 2022-01-11 TCR3UG series 13. Package Information WCSP4F Unit: mm Weight: 0.26 mg (typ.) © 2018-2022 Toshiba Electronic Devices & Storage Corporation 16 2022-01-11 TCR3UG series Land pattern dimensions for reference only Unit: mm 0.35 0.35 0.180 © 2018-2022 Toshiba Electronic Devices & Storage Corporation 17 2022-01-11 TCR3UG series RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”. • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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