TLP209D(F)

TLP209D TOSHIBA PHOTOCOUPLER PHOTO RELAY TLP209D MEASUREMENT INSTRUMENTS LOGIC IC TESTERS / MEMORY TESTERS BOARD TESTERS / SCANNERS Unit: mm The TOSHIBA TLP209D consists of an infrared emitting diode optically coupled to a photo-MOSFET in a plastic SOP package. Its characteristics include low OFF-state current and low output pin capacitance, enabling it to be used in high-frequency measurement instruments. Features • 8 pin SOP (2.54SOP8) • 2-Form-A • Peak Off-State Voltage : 2.1 mm high, 2.54 mm pitch : 200 V (min) • Trigger LED Current : 3 mA (max) • On-State Current : 50 mA (max) • On-State Resistance : 50 Ω (max) • Output Capacitance : 20 pF (max) • Isolation Voltage : 1500 Vrms (min) • UL-recognized : UL 1577, File No.E67349 JEDEC JEITA TOSHIBA 11-10H1 Weight: 0.2 g (typ.) Pin Configuration (top view) 1 8 2 7 3 6 4 5 1, 3 2, 4 5 6 7 8 Schematic : ANODE : CATHODE : DRAIN D1 : DRAIN D2 : DRAIN D3 : DRAIN D4 1 8 2 7 3 6 4 5 Start of commercial production © 2019 Toshiba Electronic Devices & Storage Corporation 1 2008-10 2019-06-17 TLP209D Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit IF 50 mA ΔIF/°C -0.5 mA/°C Reverse Voltage VR 5 V Diode Power Dissipation PD 50 mW ΔPD /°C -0.5 mW/°C Tj 125 °C VOFF 200 V ION 50 mA ΔION/°C -0.5 mA/°C PO 125 mW ΔPO / °C -1.25 mW / °C Tj 125 °C Storage Temperature Range Tstg -55 to 125 °C Operating Temperature Range Topr -40 to 85 °C Lead Soldering Temperature (10 s) Tsol 260 °C BVS 1500 Vrms Forward Current LED Forward Current Derating (Ta ≥ 25°C) Diode Power Dissipation Derating (Ta >25°C) Junction Temperature DETECTOR Off-State Output Terminal Voltage On-State Current On-State Current Derating (Ta ≥ 25°C) Output Power Dissipation Output Power Dissipation Derating (Ta ≥ 25°C) Junction Temperature Isolation Voltage (AC, 60 s, R.H. ≤ 60 %) (NOTE1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1 : Device considered a two-terminal device : LED side pins shorted together, and DETECTOR side pins shorted together. Recommended Operating Conditions Symbol Min Typ. Max Unit Supply Voltage Characteristics VDD ― ― 160 V Forward Current IF 5 7.5 15 mA On-State Current ION ― ― 50 mA Operating Temperature Topr -20 ― 60 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Individual Electrical Characteristics (Ta = 25°C) LED Characteristics DETECTOR Min Typ. Max Unit Forward Voltage Symbol VF IF = 10 mA Test Condition 1.0 1.15 1.3 V Reverse Current IR VR = 5 V ― ― 10 μA Capacitance CT V = 0 V, f = 1 MHz ― 30 ― pF Off-State Current IOFF VOFF = 160 V ― ― 1 nA Capacitance COFF V = 0 V, f = 1 MHz ― 15 20 pF © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-17 TLP209D Coupled Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Trigger LED Current IFT ION = 50 mA ― 1 3 mA Return LED Current IFC IOFF = 100 μA 0.1 ― ― mA On-State Resistance RON ION = 50 mA, IF = 5 mA ― 40 50 Ω Min Typ. Max Unit ― 0.8 ― pF 1014 ― Ω 1500 ― ― Vrms Min Typ. Max Unit ― 0.03 0.5 ― 0.07 0.2 Isolation Characteristics (Ta = 25°C) Characteristics Symbol Capacitance Input to Output CS Test Condition VS = 0 V, f = 1 MHz Isolation Resistance RS VS = 500 V, R.H.