TLP293-4(LA,E

TLP293-4 TOSHIBA PHOTOCOUPLER IRED & PHOTO-TRANSISTOR TLP293-4 Programmable Controllers Switching Power Supplies Simplex/Multiplex Data Transmissions Unit: mm TLP293-4 consists of phototransistors optically coupled to infrared emitting diodes. TLP293-4 photocoupler is housed in the very small and thin SO16 package. Since the TLP293-4 is guaranteed wide operating temperature range (Ta=55 to 125 ˚C), and high isolation voltage (3750 Vrms), it is suitable for highdensity surface mount applications such as programmable controllers.  Collector-Emitter Voltage : 80 V (min)  Current Transfer Ratio  Isolation Voltage  Operation temperature range: -55 to 125 ˚C  Safety standards : 50% (min) GB rank: 100% (min) TOSHIBA 11-11F1 Weight: 0.19 g (typ.) : 3750 Vrms (min) UL-recognized: UL 1577, File No.E67349 cUL-recognized: CSA Component Acceptance Service No.5A Pin Configuration File No.E67349 CQC- approved : GB4943.1, GB8898 Thailand Factory TLP293-4 仅适用干海拔 2000 m 以下地区安全使用 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 VDE-approved : EN 60747-5-5, EN 62368-1 (Note1) Note : When a VDE approved type is needed, please designate the Option (V4). Construction Mechanical Rating Creepage Distance Clearance Internal isolation thickness 5.0 mm (min) 5.0 mm (min) 0.4 mm (min) 1,3,5,7 : Anode 2,4,6,8 : Cathode 9,11,13,15 : Emitter 10,12,14,16 : Collector Start of commercial production © 2019 Toshiba Electronic Devices & Storage Corporation 1 2014-04 2019-05-20 TLP293-4 Current Transfer Ratio (Unless otherwise specified, Ta=25°C) Rank (Note 1) Current Transfer Ratio (%) Test condition Blank Marking of Classification IC / IF Min Max 50 600 Blank 100 600 GB 50 600 LA 100 600 LB IF = 5 mA, VCE = 5 V GB LA (Note2) IF = 0.5 mA, VCE = 5 V LGB (Note2) Note1: Specify both the part number and a rank in this format when ordering. Example: rank GB: TLP293-4(GB,E For safety standard certification, however, specify the part number alone. TLP293−4 (GB,E: TLP293-4 Note2: The LA and LGB rank are made CTR rank of the low input current condition. © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-05-20 TLP293-4 Absolute Maximum Ratings (Note)(Unless otherwise specified, Ta = 25°C) Characteristics Input forward current LED Input forward current derating (Ta≥50°C) DETECTOR Rating Unit IF 50 mA ∆IF /∆Ta −0.59 mA /°C 1 A Input forward current(Pulsed) IFP Power dissipation PD 70 mW ∆PD /∆Ta -0.82 mW /°C Input reverse voltage VR 5 V Junction temperature Tj 125 °C Collector-emitter voltage VCEO 80 V Emitter-collector voltage VECO 7 V Collector current IC 50 mA Collector power dissipation (1 Circuit) PC 100 mW ∆PC /∆Ta −0.91 mW /°C Tj 125 °C Operating temperature range Topr −55 to 125 °C Storage temperature range Tstg −55 to 125 °C Lead soldering temperature Tsol 260 (10 s) °C Total power dissipation (1 Circuit) PT 170 mW ∆PT /∆Ta −1.55 mW /°C 3750 Vrms Power dissipation derating(Ta≥50°C) Collector power dissipation derating(Ta≥25°C) (1 Circuit) Junction temperature COMMON Note Symbol Input power dissipation derating(Ta≥25°C) (1 Circuit) Isolation Voltage AC, 60 s, R.H.≤60 % BVS (Note 1) (Note 2) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: Pulse width ≤ 100 μs, frequency 100 Hz Note2: This device is considered as a two-terminal device: All pins on the LED side are shorted together, and all pin on the photodetector side are shorted together. Electrical Characteristics (Unless otherwise specified, Ta = 25°C) LED Characteristics Symbol Min Typ. Max Unit Input forward voltage VF IF = 10 mA 1.1 1.25 1.4 V Input reverse current IR VR = 5 V — — 10 μA Input capacitance DETECTOR Test Condition V = 0 V, f = 1 MHz — 30 — pF Collector-emitter breakdown voltage V(BR) CEO CT IC = 0.5 mA 80 — — V Emitter-collector breakdown voltage V(BR) ECO IE = 0.1 mA 7 — — V VCE = 48 V, — 0.01 0.08 μA VCE = 48 V, Ta = 85 °C — 2 50 μA V = 0 V, f = 1 MHz — 10 — pF Dark current Collector-emitter capacitance © 2019 Toshiba Electronic Devices & Storage Corporation IDARK CCE 3 2019-05-20 TLP293-4 Coupled Electrical Characteristics (Unless otherwise specified, Ta = 25°C) Characteristics Symbol Min Typ. Max 50 — 600 100 — 600 — 60 — 30 — — IC = 2.4 mA, IF = 8 mA — — 0.3 VCE (sat) IC = 0.2 mA, IF = 1 mA — 0.2 — — — 0.3 IC (off) VF = 0.7 V, VCE = 48 V — — 10 μA Min Typ. Max Unit — 0.8 — pF — Ω Current transfer ratio Saturated current transfer ratio Collector-emitter saturation voltage IC / IF IC / IF (sat) Test Condition IF = 5 mA, VCE = 5 V Rank GB IF = 1 mA, VCE = 0.4 V Rank GB Rank GB Off-state collector current Unit % % V Isolation Characteristics (Unless otherwise specified, Ta = 25°C) Characteristics Symbol Total capacitance (input to output) CS Isolation resistance RS Isolation voltage BVS Test Condition VS = 0 V, f = 1 MHz 12 VS = 500 V, R.H.≤60 % 1×10 AC , 60 s 14 10 3750 — — Vrms Min Typ. Max Unit — 2 — — 3 — — 3 — — 3 — — 1.5 — — 20 — — 35 — Switching Characteristics (Unless otherwise specified, Ta = 25°C) Characteristics Symbol Rise time tr Fall time tf Turn-on time ton Turn-off time toff Turn-on time ton Storage time ts Turn-off time toff Test Condition VCC = 10 V, IC = 2 mA RL = 100 Ω RL = 1.9 kΩ (Figure 1) VCC = 5 V, IF = 16 mA μs μs Figure 1: Switching Time Test Circuit IF RL VCC IF VCE VCE ton © 2019 Toshiba Electronic Devices & Storage Corporation 4 tS VCC 4.5 V 0.5 V toff 2019-05-20 TLP293-4 Characteristics Curves (Note) P C - Ta Input forward current I F (mA) Collector power dissipation PC (mW) I F - Ta This curve shows the maximum limit to the input forward current. Ambient temperature Ta (˚C) Ta (˚C) Ambient temperature This curve shows the maximum limit to the collector power dissipation. IFP-DR IF-VF Pules width ≤100 μs (mA) Input forward current IF Input forward current (pulsed) IFP (mA) Ta=25˚C This curve shows the maximum limit to the input forward current (pulsed). 10-3 100 10-1 10-2 Duty cycle ratio DR Input forward voltage ∆ V F / ∆ Ta - I F Input forward current (pulsed) IFP (mA) IF VF (V) IFP – VFP Input forward current temperature coefficient ΔVF /ΔTa (mV/°C) Input forward current 125˚C 110˚C 85˚C 50˚C 25˚C 0˚C -25˚C -55˚C (mA) Pulse width ≤10 μs Repetitive frequency=100 Hz Ta=25°C Input forward voltage (pulsed) VFP (V) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 5 2019-05-20 Toshiba Electronic Devices & Storage Corporation TLP293-4 IC-VCE IC-VCE Ta=25˚C Ta=25˚C PC(max) Collector current IC (mA) Collector current IC (mA) 50 mA 30 mA 20 mA 10 mA 5 mA 50 mA 30 mA 20 mA 10 mA 5 mA IF = 2 mA IF = 2 mA Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) IC-IF IC/IF -IF Ta=25˚C Collector current IC (mA) Current transfer ratio IC / IF (%) Ta=25˚C VCE=10 V VCE=5 V VCE=0.4 V Input forward voltage IF (mA) Input forward current VCE=5 V Ambient temperature Ta (°C) (mA) VCE(sat) (V) VCE=10 V Collector-emitter saturation voltage Dark current IDARK (μA) VCE=24 V IF V C E ( s a t ) - Ta I D A R K - Ta VCE=48 V VCE=10 V VCE=5 V VCE=0.4 V IF=8 mA, IC=2.4 mA IF=1 mA, IC=0.2 mA Ambient temperature Ta (°C) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 6 2019-05-20 Toshiba Electronic Devices & Storage Corporation TLP293-4 I C - Ta S wi t c h i n g t i m e - R L Ta=25˚C IF=1.6 mA Collector current IC (mA) 25 mA VCC=5 V 10 mA 1 mA IF=0.5 mA Switching time (μs) 5 mA 3mA toff ts ton VCE=5 V Ambient temperature Ta (°C) Load resistance RL (kΩ) S wi t c h i n g t i m e - R L S wi t c h i n g t i m e - Ta Ta=25˚C IF=16 mA IF=16 mA VCC=5 V VCC=5 V RL=1.9 kΩ ts toff Switching time (μs) Switching time (μs) toff ts ton ton Load resistance RL (kΩ) Ambient temperature Ta (°C) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 7 2019-05-20 Toshiba Electronic Devices & Storage Corporation TLP293-4 Soldering and Storage 1. Precautions for Soldering The soldering temperature should be controlled as closely as possible to the conditions shown below, irrespectiveof whether a soldering iron or a reflow soldering method is used. 1) When Using Soldering Reflow An example of a temperature profile when lead(Pb)-free solder is used  The soldering temperature profile is based on the package surface temperature (See the figure shown below, which is based on the package surface temperature.)  Reflow soldering must be performed once or twice.  The mounting should be completed with the interval from the first to the last mountings being 2 weeks. 2) When using soldering Flow  Preheat the device at a temperature of 150 °C (package surface temperature) for 60 to 120 seconds.  Mounting condition of 260 °C within 10 seconds is recommended  Flow soldering must be performed once. 3) When using soldering Iron  Complete soldering within 10 seconds for lead temperature not exceeding 260 °C or within 3 seconds not exceeding 350 °C  Heating by soldering iron must be done only once per lead. 2. Precautions for General Storage 1) Avoid storage locations where devices may be exposed to moisture or direct sunlight. 2) Follow the precautions printed on the packing label of the device for transportation and storage. 3) Keep the storage location temperature and humidity within a range of 5°C to 35°C and 45% to 75%, respectively. 4) Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty conditions. 5) Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the solderability of the leads. 6) When restoring devices after removal from their packing, use anti-static containers. 7) Do not allow loads to be applied directly to devices while they are in storage. 8) If devices have been stored for more than two years under normal storage conditions, it is recommended that you check the leads for ease of soldering prior to use. © 2019 Toshiba Electronic Devices & Storage Corporation 8 2019-05-20 TLP293-4 Option:Specification for Embossed-Tape Packing (TP) for Mini-Flat Coupler 1. Applicable Package Package Name Product Type SO16 Mini-Flat Coupler 2. Product Naming System Type of package used for shipment is denoted by a symbol suffix after a product number. The method of classification is as below. Example) TLP293-4(GB-TP,E Part number: TLP293-4 CTR rank: GB Tape type: TP [[G]]/RoHS COMPATIBLE: E (Note) Note : Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 Jun 2011 on the restriction of the use of certain hazardous substances in electrical and electronics equipment. 3. Tape Dimensions Specification 3.1 Orientation of Device in Relation to Direction of Tape Movement Device orientation in the recesses is as shown in Figure 3.1.1. Direction of Tape feed TLP293-4 Figure3.1.1 Device Orientation 3.2 Packing Quantity 2000 pcs per reel 3.3 Empty Device Recesses are as Shown in Table 1. Table 3.3.1 Occurrences of 2 or more successive empty device recesses Single empty device recesses Empty Device Recesses Standard Remarks 0 device Within any given 40-mm section of tape, not including leader and trailer 6 devices (max) per reel Not including leader and trailer 3.4 Tape Leader and Trailer The start end of the tape has 50 or more empty cavities. The hub end of the tape has 50 or more empty cavities and two empty turns only for a cover tape. © 2019 Toshiba Electronic Devices & Storage Corporation 9 2019-05-20 TLP293-4 3.5 Tape Dimensions Tape material: Synthetic Resin (protection against electrostatics) Unit: mm 2.0 ± 0.1 +0.1 φ1.5 −0 F G K0 16.0 ± 0.3 B D E 0.3 ± 0.05 A φ1.5 ± 0.1 2.6 ± 0.2 Figure3.5.1 Tape Form Table 3.5.1 Tape Dimensions Unit: mm Unless otherwise specified: ±0.1 Symbol Dimension Remark A 7.5 ― B 10.5 ― D 7.5 Center line of indented square hole and sprocket hole E 1.75 Distance between tape edge and hole center F 12.0 Cumulative error +0.1/-0.3(max) per 10 feed holes G 4.0 Cumulative error +0.1/-0.3(max) per 10 feed holes K0 2.2 Internal space © 2019 Toshiba Electronic Devices & Storage Corporation 10 2019-05-20 TLP293-4 3.6 Reel specification Material: Synthetic Resin Table 3.6.1 Reel Dimensions A C U B Unit: mm Symbol Dimension A φ330 ± 2 B φ80 ± 1 C φ13 ± 0.5 E 2.0 ± 0.5 U 4.0 ± 0.5 W1 17.5 ± 0.5 W2 21.5 ± 1.0 E W1 W2 Figure 3.6.1 Reel Dimensions 4. Packing Packed in a shipping carton. 5. Label Format The label on each carton and reel provides the part number, quantity, lot number, the Toshiba logo, CTR rank, etc. 6. Ordering Information When placing an order, please specify the part number, CTR rank, tape type and quantity (must be a multiple of 2000) as shown in the following example. Example) TLP293-4(GB-TP,E 2000 Pcs Part number: TLP293-4 CTR rank (GB Tape type: TP [[G]]/RoHS COMPATIBLE (Note) Quantity (must be a multiple of 2000) Note : Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 Jun 2011 on the restriction of the use of certain hazardous substances in electrical and electronics equipment. © 2019 Toshiba Electronic Devices & Storage Corporation 11 2019-05-20 TLP293-4 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. Hardware, software and systems described in this document are collectively referred to as “Product”. • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. • PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). 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Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product. • Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. • Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. https://toshiba.semicon-storage.com/ © 2019 Toshiba Electronic Devices & Storage Corporation 12 2019-05-20