TLP4176G(TP,F)

TLP4176G TOSHIBA Photocoupler Photorelay TLP4176G PBX Telecommunication Modem･FAX Cards, Modems In PC Measurement Instrumentation Unit: mm The TOSHIBA TLP4176GA consists of an infrared emitting diode optically coupled to a photo-MOSFET in a SOP, which is suitable for surface mount assembly. The TLP4176GA is suitable for the modem applications which require space savings. • 4 pin SOP (2.54SOP4): 2.1 mm high, 2.54 mm pitch • 1-form-B • Peak off-state voltage: 350 V (min) • Trigger LED current: 3 mA (max) • On-state current: 120 mA (max) • On-state resistance: 25 Ω (max) • Isolation voltage: 1500 Vrms (min) • UL-recognized: UL 1577, File No.E67349 Pin Configuration (top view) JEDEC ― JEITA ― TOSHIBA 11-5H1 Weight: 0.1 g (typ.) 1 4 2 3 1: ANODE 2: CATHODE 3: DRAIN 4: DRAIN Start of commercial production 2001-04 © 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-24 TLP4176G Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit IF 50 mA Forward current derating (Ta ≥ 25°C) ∆IF/°C −0.5 mA/°C Peak forward current (100 μs pulse, 100 pps) IFP 1 A Reverse voltage VR 5 V Diode power dissipation PD 50 mW △PD /°C -0.5 mW/°C Tj 125 °C VOFF 350 V ION 120 mA On-state current derating (Ta ≥ 25°C) ∆ION/°C −1.2 mA/°C Output power dissipation PO 324 mW Output power dissipation derating (Ta ≥ 25°C) ΔPO / °C −3.24 mW / °C Tj 125 °C Operating temperature range Topr −40 to 85 °C Storage temperature range Tstg −55 to 125 °C Lead soldering temperature (10 s) Tsol 260 °C Isolation voltage (AC, 60 s, R.H. ≤ 60 %) BVS 1500 Vrms LED Forward current Diode power dissipation derating (Ta ≥25°C) Junction temperature Off-state output terminal voltage Detector On-state current Junction temperature (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). Note 1: Device considered a two-terminal device: LED side pins shorted together, and DETECTOR side pins shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage VDD ― ― 280 V Forward current IF 5 ― 25 mA On-state current ION ― ― 120 mA Operating temperature Topr −20 ― 65 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. © 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-24 TLP4176G Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V   10 μA Capacitance CT VF = 0 V, f = 1 MHz  30  pF Off-state current IOFF VOFF = 350 V, IF = 5 mA   1 μA Capacitance COFF V = 0 V, f = 1 MHz, IF = 5 mA  65  pF © 2019 Toshiba Electronic Devices & Storage Corporation 3 2019-06-24 TLP4176G Coupled Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Trigger LED current IFC IOFF = 10 μA  1 3 mA Return LED current IFT ION = 120 mA 0.1   mA On-state resistance RON ION = 120 mA  15 25 Ω Min Typ. Max Unit  0.8  pF 1014  Ω 1500   Vrms Min Typ. Max Unit   1 ms   3 ms Isolation Characteristics (Ta = 25°C) Characteristics Symbol Capacitance input to output CS Test Condition VS = 0 V, f = 1 MHz Isolation resistance RS VS = 500 V, R.H. ≤ 60 % Isolation voltage BVS AC, 60 s 5× 1010 Switching Characteristics (Ta = 25°C) Characteristics Symbol Turn-on time tON Turn-off time tOFF Test Condition RL = 200 Ω VDD = 20 V, IF = 5 mA (Note 2) Note 2: Switching time test circuit IF 1 4 RL VDD IF VOUT 2 VOUT 3 10% tON © 2019 Toshiba Electronic Devices & Storage Corporation 4 90% tOFF 2019-06-24 TLP4176G IF – Ta ION – Ta 280 240 (mA) 80 ION 60 On-state current Allowable forward current IF (mA) 100 40 20 200 160 120 80 40 0 −20 0 20 40 60 80 100 0 −20 120 0 Ambient temperature Ta (°C) 20 50 Ta = 25°C (mA) 100 ION 5 On-state current (mA) Forward current IF 120 Ta = 25°C 10 3 1 0.5 0.1 0.6 0.8 1 1.2 Forward voltage 1.4 VF 1.6 0 −100 −200 −2 1.8 −1 (V) 0 1 On-state voltage VON RON – Ta 2 (V) IFC – Ta 20 5 ION = 120 mA ION = 120 mA (mA) t < 1s IFC 15 Trigger LED current (Ω) 100 ION – VON 0.3 On-state resistance RON 80 200 30 10 5 0 −20 60 Ambient temperature Ta (°C) I F – VF 100 40 0 20 40 60 Ambient temperature Ta (°C) 80 100 4 3 2 1 0 −40 −20 0 20 40 60 80 100 Ambient temperature Ta (°C) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 5 2019-06-24 Toshiba Electronic Devices & Storage Corporation TLP4176G tON, tOFF – IF tON, tOFF – Ta 1200 Ta = 25°C VDD = 20 V, RL = 200 Ω 1000 (μs) VDD = 20 V, RL = 200 Ω tOFF tON, tOFF 500 300 tON Switching time Switching time tON, tOFF (µs) 2000 100 50 30 1 3 5 Input current 10 30 IF 50 100 1000 IF = 5 mA 800 600 400 tON 200 0 −40 (mA) tOFF −20 0 20 40 60 80 100 Ambient temperature Ta (°C) IOFF – Ta 1000 VOFF = 350 V Off-state current IOFF (nA) IF = 5 mA 100 10 1 0 20 40 60 80 100 Ambient temperature Ta (°C) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. © 2019 Toshiba Electronic Devices & Storage Corporation 6 2019-06-24 TLP4176G RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”. 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