TPC6105_06

TPC6105 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC6105 Notebook PC Applications Portable Equipment Applications • • • • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) High forward transfer admittance: |Yfs| = 4.7 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −20 V) Enhancement mode: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 µA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating −20 −20 ±8 −2.7 −10.8 2.2 0.7 1.2 −1.35 0.22 150 −55~150 Unit V V V A W W mJ A mJ °C °C Drain power dissipation Drain power dissipation JEDEC JEITA TOSHIBA ― ― 2-3T1A Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range Weight: 0.011 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 56.8 178.5 Unit °C/W °C/W Circuit Configuration 6 5 4 Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2 3 1 2006-11-17 TPC6105 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) Drain-source ON resistance RDS (ON) RDS (ON) Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain (“miller”) charge tf toff Qg Qgs Qgd |Yfs| Ciss Crss Coss tr VGS ton 0V −5 V 4.7 Ω ID = −1.4 A VOUT RL = 7.14 Ω VDS = −10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±8 V, VDS = 0 V VDS = −20 V, VGS = 0 V ID = −10 mA, VGS = 0 V ID = −10 mA, VGS = 8 V VDS = −10 V, ID = −200 µA VGS = −1.8 V, ID = −0.7 A VGS = −2.5 V, ID = −1.4 A VGS = −4.5 V, ID = −1.4 A VDS = −10 V, ID = −1.4 A Min ⎯ ⎯ −20 −12 −0.5 ⎯ ⎯ ⎯ 2.4 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ VDD ∼ −16 V, VGS = −5 V, − ID = −2.7 A ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 215 110 72 4.7 470 70 80 5 9 8 26 6 4 2 Max ±10 −10 ⎯ ⎯ −1.2 300 160 110 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ nC pF S mΩ Unit µA µA V V VDD ∼ −10 V − Duty < 1%, tw = 10 µs = Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Pulse (Note 1) Symbol IDRP VDSF Test Condition — IDR = −2.7 A, VGS = 0 V Min — — Typ. — — Max −10.8 1.2 Unit A V Forward voltage (diode) 2 2006-11-17 TPC6105 Marking (Note 5) Lot code (month) Lot No. Part No. (or abbreviation code) S3E Product-specific code Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish. Pin #1 Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s) (b) Device mounted on a glass-epoxy board (b) (t = 5 s) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = −16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = −1.35A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: • on the lower left of the marking indicates Pin 1. 3 2006-11-17 TPC6105 ID – VDS −5 −4 −4.5 −4 −2.5 −2.8 −2 −8 −10 −4.5 −5 −2.8 ID – VDS −2.5 −3 −3.5 −6 −4 Common source Ta = 25°C Pulse test −2 −1.8 (A) −3.5 −3 −1.8 ID Drain current −2 VGS = −1.5 V −1 Common source Ta = 25°C Pulse test −0.2 −0.4 −0.6 −0.8 −1.0 Drain current ID (A) −4 −2 −5 −3 VGS = −1.5 V 0 0 0 0 −1 −2 −3 −4 −5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS −5 Common source −1.0 VDS = −10 V Pulse test VDS – VGS Common source Ta = 25°C Pulse test −4 (V) VDS Ta = 25°C −0.8 ID (A) −3 −2 Drain-source voltage −0.6 Drain current −0.4 −1 Ta = −55°C Ta = 100°C −0.2 ID = −2.7 A −1.4 A 0 0 −0.5 −1.0 −1.5 −2.0 −2.5 0 0 −0.7 A −2 −4 −6 −8 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| – ID 100 Common source VDS = −10 V Pulse test 1000 Common source Ta = 25°C Pulse test RDS (ON) – ID |Yfs| (S) Drain-source on resistance RDS (ON) (mΩ) −1.8 V −2.5 V 100 VGS = −4.5 V Forward transfer admittance 10 Ta = 25°C Ta = −55°C Ta = 100°C 1 −0.1 −1 −10 10 −0.1 −1 −10 Drain current ID (A) Drain current ID (A) 4 2006-11-17 TPC6105 RDS (ON) – Ta 300 Common source Pulse test −100 ID = −1.4 A −0.7 A VGS = −1.8 V 200 ID = −1.4 A 150 ID = −2.7 A −0.7 A Common source Ta = 25°C Pulse test IDR – VDS Drain reverse current IDR (A) 250 Drain-source on resistance RDS (ON) (mΩ) −10 −2.5 −4.5 100 −2.5 V ID = −0.7, −1.4, −2.7 A −1.8 −1 VGS = 0 V 50 −4.5 V 0 −80 −40 0 40 80 120 160 −1 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature Ta (°C) Drain-source voltage VDS (V) Capacitance – VDS 10000 Common source −2.0 VGS = 0 V f = 1 MHz Ta = 25°C Common source VDS = −10 V ID = −200 µA Pulse test Vth – Ta Vth (V) Ciss −1.5 (pF) Gate threshold voltage 1000 C −1.0 Capacitance 100 Coss Crss −0.5 −0.0 −80 10 −0.1 −1 −10 −100 −40 0 40 80 120 160 Ambient temperature Ta (°C) Drain-source voltage VDS (V) PD – Ta 2.5 (1) t = 5 s (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (1) DC 1 (2) t = 5 s 0.5 (2) DC 0 0 −20 Dynamic input/output characteristics −10 (W) (V) 2 −16 −4 V VDS −12 VGS −8 Drain power dissipation Drain-source voltage −8 Common source ID = −2.7 A −4 Ta = 25°C Pulse test 0 0 −4 −2 40 80 120 160 −2 −4 −6 −8 0 −10 Ambient temperature Ta (°C) Total gate charge Qg (nC) 5 2006-11-17 Gate-source voltage 1.5 VDD = −16 V −6 VGS (V) −8 V PD VDS TPC6105 rth – tw 1000 (°C/W) 300 100 Transient thermal impedance rth Device mounted on a glassepoxy board (b) (Note 2b) 30 10 Device mounted on a glassepoxy board (a) (Note 2a) 3 1 0.3 Single pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe operating area −100 (A) ID max (pulsed)* −10 1 ms * 10 ms* Drain current ID −1 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated linearly with increase in temperature −0.1 −0.1 VDSS max −1 −10 −100 Drain-source voltage VDS (V) 6 2006-11-17 TPC6105 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 2006-11-17