TPC8012-H(TE12L,Q)

TPC8012-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) TPC8012-H Switching Regulator Applications DC／DC Converter Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 0.28 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.35 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 200 V) • Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 200 V Drain-gate voltage (RGS = 20 kΩ) VDGR 200 V Gate-source voltage VGSS ±30 V Drain current DC (Note 1) ID 1.8 Pulse (Note 1) IDP 7.2 PD 1.9 Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) A W PD 1.0 W EAS 2.05 mJ IAR 1.8 A EAR 0.19 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.085 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Note: For Notes 1 to 4, refer to the next page. This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-01-17 TPC8012-H Thermal Characteristics Characteristic Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-a) 65.8 °C/W Rth (ch-a) 125 °C/W Marking (Note 5) TPC8012 H Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: The channel temperature should not exceed 150°C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 50 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = 1.8 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: • on the lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture (01 for first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) 2 2006-01-17 TPC8012-H Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cutoff current IDSS VDS = 200 V, VGS = 0 V ⎯ ⎯ 100 μA ID = 10 mA, VGS = 0 V 200 ⎯ ⎯ V Drain-source breakdown voltage V (BR) DSS Vth VDS = 10 V, ID = 1 mA 3.0 ⎯ 5.0 V Drain-source ON-resistance RDS (ON) VGS = 10 V, ID = 0.9 A ⎯ 0.28 0.40 Ω Forward transfer admittance |Yfs| VDS = 10 V, ID = 0.9 A 0.65 1.35 ⎯ S Input capacitance Ciss ⎯ 440 ⎯ Reverse transfer capacitance Crss ⎯ 80 ⎯ Output capacitance Coss ⎯ 260 ⎯ ⎯ 23 ⎯ ⎯ 28 ⎯ Gate threshold voltage tr Turn-on time ton 50 Ω Switching time Fall time tf Turn-off time toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge 1 Qgs Gate-drain (“Miller”) charge Qgd ID = 0.9 A VOUT VGS 10 V 0V RL = 111 Ω Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz pF ns ⎯ 22 ⎯ ⎯ 73 ⎯ ⎯ 11 ⎯ ⎯ 6 ⎯ ⎯ 5 ⎯ Test Condition Min Typ. Max ⎯ ⎯ ⎯ 7.2 A ⎯ ⎯ −1.5 V VDD ∼ − 100 V < Duty = 1%, tw = 10 μs VDD ∼ − 160 V, VGS = 10 V, ID = 1.8 A nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristic Drain reverse current Forward voltage (diode) Pulse Symbol (Note 1) IDRP VDSF IDR = 1.8 A, VGS = 0 V 3 Unit 2006-01-17 TPC8012-H ID – VDS ID – VDS 5 8 Common source Ta = 25°C Pulse test 7.6 4 15 7.0 ID 7.3 2 6.6 1 6 3 8 7.6 Common source Ta = 25°C Pulse test 7.3 10 (A) 10 Drain current Drain current ID (A) 15 5 4 7 3 6.6 2 6 1 VGS = 5 V 0 0 1 2 3 Drain-source voltage 4 VDS 0 5 0 (V) 4 8 Drain-source voltage ID – VGS 6 (V) Drain-source voltage 3 Ta = −55°C 2 100 1 25 0 2 6 4 Gate-source voltage (V) Common source Ta = 25°C Pulse test 0.8 8 VGS 0.6 ID = 1.8 A 0.4 0.9 0.2 0 10 0.45 0 (V) 3 6 1 Drain-source ON-resistance RDS (ON) (Ω) Common source VDS = 10 V Pulse test 10 25 Ta = −55°C 100 1 0.1 0.1 1 Drain current 12 VGS 15 (V) RDS (ON) – ID |Yfs| (S) 100 9 Gate-source voltage |Yfs| – ID Forward transfer admittance VDS VDS (A) Drain current ID 4 0 20 16 VDS – VGS 1.0 Common source VDS = 10 V Pulse test 5 12 ID VGS = 10 V 0.1 0.01 0.1 10 (A) Common source Ta = 25°C Pulse test 1 Drain current 4 10 ID (A) 2006-01-17 TPC8012-H RDS (ON) – Ta IDR – VDS 1 10 Common source Ta = 25°C Pulse test (A) Pulse test 0.6 ID = 2.8A,5.5A,11A 0.4 VGS = 10 V 0.2 0 −80 −40 0 40 Ambient temperature 120 Ta 1 VGS = 0 V 0.1 160 −0.2 0 −0.4 −0.6 −0.8 Drain-source voltage −1.2 −1.0 VDS (V) 80 120 Vth – Ta Vth (V) Gate threshold voltage 1000 Ciss Coss 100 Crss Common source Ta = 25°C f = 1 MHz VGS = 0 V 4.0 3.0 2.0 Common source 1.0 VDS = 10 V ID = 1 mA Pulse test 0 −80 10 VDS 200 (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s Drain-source voltage 1.2 (2) 0.8 0.4 0 0 40 80 Ambient temperature (°C) 120 Ta 160 Common source ID = 1.8 A Ta = 25°C Pulse test VDS VDD = 40 V 120 160 V 80 8 40 4 4 8 Total gate charge (°C) 5 16 12 80 V 0 0 160 20 VGS (W) (1) Ta 160 Dynamic input/output characteristics (1) Device mounted on a glass-epoxy board (a) (Note 2a) 1.6 40 (V) PD – Ta 2.0 0 (V) Drain-source voltage −40 Ambient temperature 100 12 Qg 16 Gate-source voltage 1 (V) Capacitance 3 5.0 10 0.1 PD 4.5 (°C) C (pF) 80 10 1 Capacitance – VDS 10000 Drain power dissipation Drain reverse current IDR 0.8 VDS Drain-source ON-resistance RDS (ON) (Ω) Common source 0 20 (nC) 2006-01-17 TPC8012-H rth− tw 1000 Transient thermal impedance rth (°C/W) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (2) 100 (1) 10 1 Single - pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe operating area 10 Drain current ID (A) ID MAX (Pulse) * t =1 ms * 10 ms * 1 0.1 0.01 0.1 VDSS MAX * Single-pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 1 10 Drain-source voltage 100 VDS 1000 (V) 6 2006-01-17 TPC8012-H RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 2006-01-17