TPC8112_06

TPC8112 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) TPC8112 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 5.0mΩ (typ.) High forward transfer admittance: |Yfs| = 31 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating −30 −30 ±20 −13 −52 1.9 1.0 219 −13 0.19 150 −55 to 150 Unit V V V A W JEDEC JEITA TOSHIBA ― ― 2-6J1B Weight: 0.080 g (typ.) Pulse (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range Circuit Configuration W mJ A mJ °C °C 1 2 3 4 8 7 6 5 Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-15 TPC8112 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (Note 2a) (t = 10 s) Thermal resistance, channel to ambient (Note 2b) (t = 10 s) Symbol Rth (ch-a) Rth (ch-a) Max 65.8 125 Unit °C/W °C/W Marking (Note 5) TPC8112 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = −24 V, Tch = 25°C (initial), L = 1.0 mH, RG = 25 Ω, IAR = −13 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: • on lower left of the marking indicates Pin 1. ※ Weekly code: (Three digits) Week of manufacture (01 for the first week of a year: sequential number up to 52 or 53) Year of manufacture (The last digit of a calendar year) 2 2006-11-15 TPC8112 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (“miller”) charge tf toff Qg Qgs1 Qgd Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton 0V VGS −10 V ID = −6.5 A VOUT VDS = −10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = −30 V, VGS = 0 V ID = −10 mA, VGS = 0 V ID = −10 mA, VGS = 20 V VDS = −10 V, ID = −1 mA VGS = −4 V, ID = −6.5 A VGS = −10 V, ID = −6.5 A VDS = −10 V, ID = −6.5 A Min Typ. Max Unit ⎯ ⎯ −30 −15 −0.8 ⎯ ⎯ 15.5 ⎯ ⎯ ⎯ ⎯ ⎯ 9.0 5.0 31 5880 1000 1050 11 22 110 395 130 10 30 ±10 −10 ⎯ ⎯ −2.0 14 6.0 µA µA V V mΩ S ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ VDD ∼ −24 V, VGS = 10 V, − ID = −13 A pF RL = 3.2 Ω 4.7 Ω ns ⎯ ⎯ ⎯ ⎯ ⎯ nC VDD ∼ −15 V − Duty < 1%, tw = 10 µs = ⎯ ⎯ Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Pulse (Note 1) Symbol IDRP VDSF Test Condition Min Typ. Max Unit A V ⎯ IDR = −13 A, VGS = 0 V ⎯ ⎯ ⎯ ⎯ −52 1.2 Forward voltage (diode) 3 2006-11-15 TPC8112 ID – VDS −20 −10 −8 −6 −4 −50 −2.8 −2.6 −3 −40 Common source Ta = 25°C Pulse test −4 −3 −2.8 −10 −8 −6 ID – VDS Common source Ta = 25°C Pulse test −16 (A) (A) −2.4 −2.6 −30 −12 ID Drain current Drain current ID −8 −2.2 −20 −2.4 −4 VGS = −2 V −2.2 −10 VGS = −2 V 0 0 −0.2 −0.4 −0.6 −0.8 −1.0 0 0 −1 −2 −3 −4 −5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS −50 Common source VDS = −10 V Pulse test −0.5 VDS – VGS Common source Ta = 25°C Pulse test −40 (V) VDS Drain-source voltage −0.4 ID (A) −30 −0.3 Drain current −20 −0.2 −10 25 100 Ta = −55°C −2 −3 −4 −5 −0.1 −3 −6.5 ID = −13 A 0 0 −1 0 0 −4 −8 −12 −16 −20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| – ID (S) 100 25 30 Ta = −55°C 100 10 100 RDS (ON) – ID Forward transfer admittance ⎪ Yfs⎪ Drain-source ON resistance RDS (ON) (mΩ) 10 VGS = −4 V −10 3 1 1 Common source VDS = −10 V Pulse test −0.3 −1 −3 −10 −30 −100 0.3 −0.1 0.1 −0.1 Common source Ta = 25°C Pulse test −1 −10 −100 Drain current ID (A) Drain current ID (A) 4 2006-11-15 TPC8112 RDS (ON) – Ta 30 Common source Pulse test −100 −10 −5 IDR – VDS Drain reverse current IDR (A) Drain-source ON resistance RDS (ON) (mΩ) −3 −10 20 ID = −13 A, −6.5 A, −3 A 10 VGS = −4 V ID = −13 A, −6.5 A, −3 A −10 V 0 −80 −40 0 40 80 120 160 −1 −1 VGS = 0 V −0.1 0 Common source Ta = 25°C Pulse test 0.2 0.4 0.6 0.8 1.0 1.2 Ambient temperature Ta (°C) Drain-source voltage VDS (V) Capacitance – VDS 10000 Ciss 3000 −2.0 Vth – Ta Common source VDS = −10 V −1.6 ID = −1 mA Pulse test C Gate threshold voltage −100 1000 Coss Crss Vth (V) (pF) −1.2 Capacitance 300 Common source 100 VGS = 0 V f = 1 MHz Ta = 25°C 30 −0.1 −0.3 −1 −3 −10 −30 −0.8 −0.4 Drain-source voltage VDS (V) 0 −80 −40 0 40 80 120 160 Ambient temperature Ta (°C) PD – Ta 2.0 (1) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) Dynamic input/output characteristics −30 Common source VDD = −24 V VDS −20 ID = −13 A Ta = 25°C Pulse test −20 −30 (W) (V) 1.6 Drain power dissipation Drain-source voltage (2) 0.8 −12 −10 −6 VGS −6 VDD = −24 V −12 −10 0.4 0 0 40 80 120 160 200 0 0 40 80 120 160 0 200 Ambient temperature Ta (°C) Total gate charge Qg (nC) 5 2006-11-15 Gate-source voltage 1.2 t = 10 s VGS (V) PD VDS TPC8112 rth − tw 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) Device mounted on a glass-epoxy board (b) (Note 2b) Normalized transient thermal impedance rth (°C/W) (2) (2) 100 t = 10 s (1) 10 1 Single pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (S) Safe operating area −100 ID max (pulse) * 1 ms* Drain current ID (A) −10 10 ms * −1 −0.1 −0.01 −0.01 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. −0.1 −1 VDSS max −10 −100 Drain-source voltage VDS (V) 6 2006-11-15 TPC8112 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 2006-11-15