TPC8A01

TPC8A01 Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ) Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－MOSⅢ) TPC8A01 DC-DC CONVERTER Notebook PC Portable Machines and Tools • • • • • • • • Includes Schottky Barrier Diode Type. (Q2) Low Forward Voltage: VDSF=0.6V(Max.) Small footprint due to small and thin package. High Speed Switching.(Q1) Small Gate Charge.(Q1): Qg＝17nC(Typ.) Low drain-source ON resistance(Q2) RDS (ON) = 13 mΩ (typ.) High forward transfer admittance(Q2): |Yfs| = 11 S (typ.) Low leakage current. (Q1): IDSS = 10 µA(Max.) (VDS = 30 V) (Q2): IDSS = 100 µA(Max.) (VDS = 30 V) Enhancement-mode : (Q1) Vth = 1.1~2.3 V (VDS = 10 V, ID = 1 mA) : (Q2) Vth = 1.1~2.3 V (VDS = 10 V, ID = 1 mA) 1 SOURCE 4 GATE 5, 6DRAIN/CATHOUDE 7, 8 DRAIN 2 GATE Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD(1) PD(2) PD(1) PD(2) EAS IAR EAR Tch Tstg Rating Q1 30 30 ±20 6 24 1.5 1.1 W 0.75 0.45 46.8 (Note 4a) 6 0.11 150 −55~150 93.9 (Note 4b) 8.5 mJ A mJ °C °C Q2 30 30 ±20 8.5 34 Unit V V V A 3 SURCE/ANODE JEDEC JEITA TOSHIBA ― ― 2-6J1E Weight: 0.080 g (typ.) Drain power Single-device operation dissipation (Note 3a) (t = 10s) Single-device value at (Note 2a) dual operation (Note 3b) Drain power Single-device operation (Note 3a) dissipation (t = 10s) Single-device value at (Note 2b) dual operation (Note 3b) Single pulse avalanche energy Avalanche current Repetitive avalanche energy Single-device value at operation (Note 2a, 3b, 5) Channel temperature Storage temperature range Circuit Configuration 8 7 6 5 1 Q1 2 3 Q2 4 (Includes Schottky Barrier Diode) Note: (Note 1), (Note 2ab), (Note 3ab), (Note 4), (Note 5) Please see next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic sensitive device. Please handle with caution. Schottky barrier diodes are having large-reverse-current-leakage characteristic compare to the other rectifier products. This current leakage and not proper operating temprature or voltage may cause thermalrun. Please take forward and reverse loss into consideration when you design. 1 2006-11-16 TPC8A01 Thermal Characteristics Characteristics Single-device operation (Note 3a) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 83.3 Unit Thermal resistance, channel to ambient (t = 10s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation (Note 2a) 114 °C/W 167 Thermal resistance, channel to ambient (t = 10s) (Note 2b) Single-device value at dual operation (Note 2b) 278 Marking TPC8A01 ※ Type Lot No. Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: a) Device mounted on a glass-epoxy board (a) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.). b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.). Note 4: a) VDD = 24 V, Tch = 25°C (Initial), L = 1.0 mH, RG = 25 Ω , IAR = 6.0 A b) VDD = 24 V, Tch = 25°C (Initial), L = 1.0 mH, RG = 25 Ω , IAR = 8.5 A Note 5: Repetitive rating; pulse width limited by max channel temperature. Note 6: • on lower left of the marking indicates Pin 1. ※ Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) 2 2006-11-16 TPC8A01 Q1 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time tf toff Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VGS 10 V 0V ID = 3.0 A VOUT VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = −20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 3.0 A VGS = 10 V, ID = 3.0 A VDS =10 V, ID = 3.0 A Min Typ. Max Unit ⎯ ⎯ 30 15 1.1 ⎯ ⎯ ⎯ ⎯ ⎯ 23 18 9 940 130 390 17 25 4 21 17 10 1.9 4.1 6 ±10 −10 ⎯ ⎯ 2.3 30 25 µA µA V V mΩ S ⎯ ⎯ 4.5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ VDD ∼ 24 V, VGS = 10 V,ID = 6.0 A − pF 4.7 Ω RL = 5.0 Ω ns VDD ∼ 15 V − Duty < 1%, tw = 10 µs = VDD ∼ 24 V, VGS = 10 V,ID = 6.0 A − ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ nC Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (“miller”) charge Qg VDD ∼ 24 V, VGS = 5 V,ID = 6.0 A − Qgs1 Qgd ⎯ ⎯ Gateswitch charge Qsw Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition Min Typ. Max 24 Unit A V ⎯ IDR = 6.0 A, VGS = 0 V ⎯ ⎯ ⎯ ⎯ −1.2 3 2006-11-16 TPC8A01 Q2 (Includes Schottky Barrier Diode) Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (“miller”) charge tf toff Qg Qgs1 Qgd VDD ∼ 24 V, VGS = 10 V,ID = 8.5 A − Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton VGS 10 V 0V ID = 4.3 A VOUT VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = −20 V VDS = 10 V, ID = 1 mA VGS = 4.5 V, ID = 4.3 A VGS = 10 V, ID = 4.3 A VDS = 10 V, ID = 4.3 A Min Typ. Max Unit ⎯ ⎯ 30 15 1.1 ⎯ ⎯ ⎯ ⎯ ⎯ 16 13 11 2295 360 510 8 17 15 52 49 27 3.7 10.8 14.5 ±10 10 µA µA V V mΩ S ⎯ ⎯ 2.3 21 18 ⎯ ⎯ 5.5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF 4.7 Ω RL = 3.5 Ω ns VDD ∼ 15 V − Duty < 1%, tw = 10 µs = VDD ∼ 24 V, VGS = 10 V,ID = 8.5 A − VDD ∼ 24 V, VGS = 5 V,ID = 8.5 A − ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ nC Gateswitch charge Qsw Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition Min Typ. Max 34 Unit A V ⎯ IDR = 1.0 A, VGS = 0 V IDR = 8.5 A, VGS = 0 V ⎯ ⎯ ⎯ ⎯ −0.5 ⎯ −0.6 −1.2 4 2006-11-16 TPC8A01 Q1 ID – VDS 10 10 6 4 3.5 3.2 3.1 ID – VDS Common source Ta = 25°C Pulse test 20 10 8 6 4 3.5 3.3 Common source Ta = 25°C Pulse test 8 8 16 3.0 (A) (A) 3.2 ID ID Drain current 2.9 6 12 3.1 Drain current 4 2.8 8 3.0 29 2.7 2 2.6 4 2.8 0 0 0.2 0.4 0.6 0.8 VGS=2.5V VGS=2.6V 0 0 1 2 3 4 5 1 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS 12 VDS – VGS 0.6 Common source VDS = 10 V Pulse test Common source Ta = 25°C Pulse test (A) VDS Drain-source voltage Tａ=-55℃ (V) 0.5 8 25 0.4 Drain current ID 100 4 0.3 0.2 ID=6A 0.1 3 1.5 0 0 1 2 3 4 5 6 0 0 2 4 6 8 10 12 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| – ID 100 (S) Common source VDS = 10 V Pulse test RDS (ON) – ID 1000 Common source Ta = 25°C Pulse test Tａ=-55℃ Forward transfer admittance ⎪ Yfs⎪ 10 Drain-source ON resistance RDS (ON) (mΩ) 25 100 100 VGS=4.5V 1 10 10 0.1 0.1 1 Drain current 1 10 ID (A) 100 0.1 1 10 100 Drain current ID (A) 5 2006-11-16 TPC8A01 Q1 RDS (ON) – Ta 50 100 IDR – VDS Drain reverse current IDR (A) Drain-source ON resistance RDS (ON) (mΩ) 40 10 5 3 30 VGS=4.5V 20 ID=6A 3 1.5 10 1 0 ID=1.5,3,6A 10V 10 VGS=-1V 1 Common source Pulse test 0 -80 -40 0 40 80 120 160 0.1 0 - 0.2 - 0.4 - 0.6 - 0.8 Common source Ta = 25°C Pulse test -1 -1.2 Ambient temperature Ta (°C) Drain-source voltage VDS (V) Capacitance – VDS Vth – Ta 3 Common source VDS = 10 V ID = 1 mA Pulse test 10000 Ciss (pF) 1000 Vth (V) Gate threshold voltage Coss 100 2 Capacitance C Crss 10 Common source Ta = 25°C f = 1MHz VGS = 0 V 1 0 -80 -40 0 40 80 120 160 1 0.1 1 Drain-source voltage 10 VDS (V) 100 Ambient temperature Ta (°C) PD – Ta 2 Device mounted on a glass-epoxy board (a) Dynamic input/output characteristics 40 Common source ID = 6 A Ta = 25°C Pulse test 40 1.6 (1) Drain power dissipation Drain-source voltage 20 12 6 10 VDD=24V VGS 0 20 0.8 (3) (4) 0.4 10 0 0 0 0 5 10 15 20 25 30 40 80 120 160 200 Ambient temperature Ta (°C) Total gate charge Qg (nC) 6 2006-11-16 Gate-source voltage 1.2 (2) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s (W) (V) PD VDS 30 VDS 30 VGS (V) TPC8A01 Q1 rth − tw 1000 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) 300 Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) 500 (4) (3) (2) (1) Normalized transient thermal impedance rth (°C/W) 100 50 30 10 5 3 1 0.5 0.3 Single pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (S) Safe operating area ID max (pulse) * Single-device value at dual operation (Note 3b) 1 ms * ID (A) Drain current 10 ms * * Single pulse Ta = 25°C VDSS max Curves must be derated linearly with increase in temperature. Drain-source voltage VDS (V) 7 2006-11-16 TPC8A01 Q2(Includes Schottky Barrier Diode) ID – VDS 10 10 8 6 4 3.5 3 2.5 ID – VDS 20 10 8 6 4 3 2.8 2.6 Common source Ta = 25°C Pulse test 2.7 8 16 (A) ID ID (A) 12 6 2.4 2.6 Drain current Drain current 2.5 4 2.3 2.2 8 2.4 2 4 2.3 2.2 0 0 0.2 Common source Ta = 25°C Pulse test 2.1 VGS=2.0V VGS=2.1V 0 0.4 0.6 0.8 1 0 1 2 3 4 5 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS 20 VDS – VGS 0.6 Common source Ta = 25°C Pulse test 16 (A) VDS Drain-source voltage 25 Tａ=-55℃ (V) 100 0.5 0.4 ID Drain current 12 0.3 8 0.2 ID=8.5A 4 Common source VDS = 10 V Pulse test 0.1 4.3 2.1 0 0 1 2 3 0 5 6 4 0 2 4 6 8 10 12 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| – ID 100 (S) 1000 RDS (ON) – ID Common source Ta = 25°C Pulse test Tａ=-55℃ 25 100 Forward transfer admittance ⎪ Yfs⎪ Drain-source ON resistance RDS (ON) (mΩ) 10 100 VGS=4.5V 1 10 VGS=10V 0.1 0.1 Common source VDS = 10 V Pulse test 1 1 10 Drain current ID (A) 100 0.1 1 10 100 Drain current ID (A) 8 2006-11-16 TPC8A01 Q2(Includes Schottky Barrier Diode) RDS (ON) – Ta 50 IDR – VDS Common source Pulse test 100 Drain reverse current IDR (A) Drain-source ON resistance RDS (ON) (mΩ) 40 5 10 3 10 30 ID=8.5A 20 4.3 1 2.1 VGS=4.5V ID=2.1/4.3/8.5A VGS=0V 1 10 VGS=10V 0 -80 -40 0 40 80 120 160 Common source Ta = 25°C Pulse test 0.1 0 - 0.2 - 0.4 - 0.6 - 0.8 -1 - 1.2 Ambient temperature Ta (°C) Drain-source voltage VDS (V) Capacitance – VDS Vth – Ta 3 Common source VDS = 10 V ID = 1 mA Pulse test 10000 Ciss (pF) Vth Coss 1000 Crss (V) Gate threshold voltage 2 1 0 -80 Capacitance C 100 10 1 0.1 1 Drain-source voltage Common source Ta = 25°C f = 1MHz VGS = 0 V 10 VDS (V) 100 -40 0 40 80 120 160 Ambient temperature Ta (°C) PD – Ta 2 Device mounted on a glass-epoxy board (a) Dynamic input/output characteristics 40 Common source ID = 8.5 A Ta = 25°C Pulse test 40 1.6 (1) Drain power dissipation Drain-source voltage 20 12 6 10 VGS VDD=24V 20 0.8 (3) (4) 0.4 10 0 0 40 80 120 160 200 0 0 10 20 30 40 50 60 70 80 90 0 100 Ambient temperature Ta (°C) Total gate charge Qg (nC) 9 2006-11-16 Gate-source voltage 1.2 (2) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s (W) (V) PD VDS 30 VDS 30 VGS (V) TPC8A01 Q2(Includes Schottky Barrier Diode) rth − tw 1000 Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) 300 Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) Normalized transient thermal impedance rth (°C/W) 500 (4) (3) (2) (1) 100 50 30 10 5 3 1 0.5 0.3 Single pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (S) Safe operating area 100 ID max (pulse) * Single-device value at dual operation (Note 3b) 1 ms * (A) 10 Drain current ID 10 ms * 1 * Single pulse Ta = 25°C VDSS max 1 10 100 Curves must be derated linearly with increase in temperature. 0.1 0.01 0.1 Drain-source voltage VDS (V) 10 2006-11-16 TPC8A01 Q2 (VGS=0V) IDR – VDSF IDSS – Tch 100000 Pulse test (typ.) 10 IDR (A) (μA) 1 Drain reverse current Drain cut-OFF current 75℃ 25℃ 0.1 IDSS Tch=125℃ 10000 20 1000 VDS = 30 V 10 100 5 Pulse test 0 .01 0 0.2 0.4 0.6 VDS (V) 10 0.8 1 0 20 40 60 80 100 120 140 160 Drain-source voltage Channel temperature Tch (°C) Tch – VDS 160 Pulse test 140 (℃) Tch Channel temperature 120 100 80 60 40 20 0 0 10 20 30 40 Drain-source voltage VDS (V) 11 2006-11-16 TPC8A01 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 12 2006-11-16