TPCA8025(TE12L,Q,M

TPCA8025 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TPCA8025 Lithium-Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm 1.27 0.4 ± 0.1 High forward transfer admittance: |Yfs| = 80S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) 0.95 ± 0.05 Absolute Maximum Ratings (Ta = 25°C) Rating Unit Drain-source voltage VDSS 30 V Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V Gate-source voltage VGSS ±20 V (Note 1) ID 40 Pulsed (Note 1) IDP 120 PD 45 W PD 2.8 W PD 1.6 W EAS 208 mJ IAR 40 A EAR 4.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C DC Drain current Drain power dissipation (Tc = 25℃) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc = 25℃) (Note 4) 0.05 S S Symbol 0.595 5.0 ± 0.2 4 1 0.6 ± 0.1 Characteristics 4 1 4.25 ± 0.2 8 5 A 1,2,3: SORCE 5,6,7,8: DRAIN 4: GATE JEDEC ⎯ JEITA ⎯ TOSHIBA A 0.166 ± 0.05 Low drain-source ON-resistance: RDS (ON) = 2.7 mΩ (typ.) • 1.1 ± 0.2 • 0.15 ± 0.05 3.5 ± 0.2 Small footprint due to a small and thin package 0.8 ± 0.1 • 0.05 M A 5 5.0 ± 0.2 6.0 ± 0.3 8 2-5Q1A Weight: 0.069 g (typ.) Circuit Configuration 8 7 6 5 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in 4 1 2 3 temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. 1 2008-06-27 TPCA8025 Thermal Characteristics Characteristics Thermal resistance, channel to case (Tc = 25℃) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Max Unit Rth (ch-c) 2.78 °C/W Rth (ch-a) 44.6 °C/W Rth (ch-a) 78.1 °C/W Marking (Note 5) TPCA 8025 Part number ∗ Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) (a) Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.1mH, RG = 25 Ω, IAR = 40 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: ∗Weekly code: (Three digits) Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the year) 2 2008-06-27 TPCA8025 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA Drain cut-OFF current IDSS VDS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯ V (BR) DSX ID = 10 mA, VGS = −20 V 10 ⎯ ⎯ VDS = 10 V, ID = 1 mA 1.3 ⎯ 2.5 VGS = 4.5 V, ID = 20 A ⎯ 4.2 6 VGS = 10 V, ID = 20 A ⎯ 2.7 3.5 VDS = 10 V, ID = 20 A 40 80 ⎯ ⎯ 2200 ⎯ ⎯ 430 ⎯ ⎯ 690 ⎯ ⎯ 12 ⎯ ⎯ 22 ⎯ Drain-source breakdown voltage Gate threshold voltage Vth Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss tr Turn-ON time ton 4.7 Ω Switching time Fall time tf Turn-OFF time Total gate charge (gate-source plus gate-drain) toff ID = 20 A VOUT VGS 10 V 0V RL = 0.75 Ω Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz VDD ≈ 15 V Duty ≤ 1%, tw = 10 μs Qg Gate-source charge 1 Qgs1 Gate-drain (“miller”) charge Qgd VDD ≈ 24 V, VGS = 10 V, ID = 40 A V V mΩ S pF ns ⎯ 23 ⎯ ⎯ 74 ⎯ ⎯ 49 ⎯ ⎯ 8.5 ⎯ ⎯ 16 ⎯ nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol Test Condition Min Typ. Max Unit IDRP ⎯ ⎯ ⎯ 120 A ⎯ ⎯ −1.2 V VDSF IDR = 40 A, VGS = 0 V 3 2008-06-27 TPCA8025 ID – VDS 50 4.5 4 10 ID – VDS 100 3.8 3.6 10 4.5 8 3.5 30 ID 6 3.4 Drain current Drain current ID (A) 5 (A) 40 Common source Ta = 25°C Pulse test 20 3.2 10 VGS = 3 V 0 0 0.2 0.4 0.6 0.8 Drain−source voltage VDS 80 4 6 3.8 5 Common source Ta = 25°C Pulse test 8 3.6 60 3.5 3.4 40 3.2 20 VGS = 3 V 0 0 1 (V) 1 2 Drain-source voltage ID – VGS Common source VDS = 10 V Pulse test 60 Drain−source voltage ID Drain current VDS 40 Ta = −55°C 20 5 (V) VDS – VGS (A) 80 4 0.4 VDS (V) 100 3 100 Common source Ta = 25°C Pulse test 0.32 0.24 0.16 ID = 40 A 0.08 20 10 25 0 0 1 2 3 4 Gate−source voltage 5 VGS 0 0 6 2 4 Gate−source voltage (V) |Yfs| – ID 100 Ta = −55°C 25 1 Common source VDS = 10 V Pulse test 0.1 0.1 1 Drain current 10 Drain−source ON-resistance RDS (ON) (mΩ) Forward transfer admittance |Yfs| (S) 100 100 8 VGS 10 (V) RDS (ON) – ID 1000 10 6 10 4.5 VGS = 10 V 1 0.1 100 ID (A) Common source Ta = 25°C Pulse test 1 Drain current 4 10 100 ID (A) 2008-06-27 TPCA8025 RDS (ON) – Ta IDR – VDS 10 1000 (A) IDR 8 ID = 10, 20, 40 A Drain reverse current Drain-source ON-resistance RDS (ON) (mΩ) Common source Pulse test 6 4 VGS = 4.5 V ID = 10, 20, 40 A 2 VGS = 10 V 0 −80 −40 0 40 80 Ambient temperature 120 VGS = 0 V 1 Common source Ta = 25°C Pulse test −0.2 −0.4 −0.6 Drain−source voltage −0.8 VDS (V) 80 120 −1 Vth – Ta Capacitance – VDS Vth (V) 3 Ciss Gate threshold voltage 1000 C (pF) 3 10 Ta (°C) 10000 Capacitance 4 1 0.1 0 160 10 100 Coss Crss 100 10 0.1 Common source VGS = 0 V f = 1 MHz Ta = 25°C 1 10 Drain−source voltage 100 VDS (V) 2.5 2 1.5 1 Common source 0.5 V DS = 10 V ID = 1mA Pulse test 0 −80 −40 0 40 Ambient temperature 160 Ta (°C) Dynamic input/output characteristics 16 VGS 40 (V) 20 Common source ID = 40 A Ta = 25°C Pulse test VDS 30 12 VDD = 6V 12 24 20 8 VGS 10 0 4 0 10 20 30 40 Total gate charge 50 Qg 60 70 Gate−source voltage Drain−source voltage VDS (V) 50 0 (nC) 5 2008-06-27 TPCA8025 rth − tw Transient thermal impedance rth (°C/W) 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Tc = 25℃ (2) 100 (1) 10 (3) 1 Single pulse 0.1 0.001 0.01 0.1 1 Pulse width 10 100 tw (s) PD – Ta (W) 40 PD (1) 2.5 2 Drain power dissipation Drain power dissipation PD – Tc 50 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s PD (W) 3 (2) 1.5 1 0.5 0 0 40 80 120 Ambient temperature 1000 30 20 10 0 0 160 Ta (°C) 40 80 Case temperature 120 Tc 160 (°C) Safe operating area 1000 (A) 100 ID max (Pulse) * 1 ms * ID max (continuous) Drain current ID t = 10 ms * DC operation Tc = 25 °C 10 1 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.1 0.1 1 Drain−source voltage VDSS max 10 VDS 100 (V) 6 2008-06-27 TPCA8025 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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