TPCA8103_06

TPCA8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCA8103 0.5±0.1 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications 6.0±0.3 Unit: mm 1.27 8 0.4±0.1 5 0.05 M A • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 3.1 mΩ (typ.) High forward transfer admittance: |Yfs| =45S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) 5.0±0.2 0.15±0.05 1 0.95±0.05 4 0.595 A 5.0±0.2 S 1 4 0.6±0.1 4.25±0.2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR (Tc=25°C) (Note 4) Channel temperature Storage temperature range EAR Tch Tstg Rating −30 −30 ±20 − 40 −120 45 2.8 Unit V V V A W W 8 1,2,3：SOURCE 4：GATE 5,6,7,8：DRAIN 5 0.8±0.1 JEDEC JEITA TOSHIBA ― ― 2-5Q1A Pulsed (Note 1) (Tc=25°C) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Weight: 0.076 g (typ.) Drain power dissipation Drain power dissipation Circuit Configuration 8 7 6 5 Drain power dissipation 1.6 W Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy 208 − 40 4.5 150 −55 to 150 mJ A mJ 1 2 3 4 °C °C Note: For (Note 1), (Note 2), (Note 3), (Note 4), please refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic sensitive device. Please handle with caution. 1 2006-11-16 3.5±0.2 1.1±0.2 0.05 S 0.166±0.05 TPCA8103 Thermal Characteristics Characteristics Thermal resistance, channel to case (Tc=25°C) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-c) Max 2.78 Unit °C/W Rth (ch-a) 44.6 °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 78.1 °C/W Marking (Note 5) TPCA 8103 ※ Type Lot No. Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (a) (b) Note 3: VDD = 24 V， Tch = 25°C (initial)， L = 100µH， RG = 25 Ω， IAR = − 40 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: ○ on lower left of the marking indicates Pin 1. ※ Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) 2 2006-11-16 TPCA8103 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time tf toff Qg Qgs1 Qgd Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton 0V VGS −10 V 4.7 Ω ID = −20A VOUT RL = 0.8 Ω VDS = −10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = −30 V, VGS = 0 V ID = −10 mA, VGS = 0 V ID = −10 mA, VGS = 20 V VDS = −10 V, ID = − 1 mA VGS = −4 V, ID = −20 A VGS = −10 V, ID = −20 A VDS = −10 V, ID = −20 A Min ⎯ ⎯ −30 −13 −0.8 ⎯ ⎯ 22.5 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ VDD ∼ −24 V, VGS = −10 V, − ID = −40 A ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ 5.2 3.1 45 7880 1340 1450 15 13 251 Max ±10 −10 ⎯ ⎯ −2.0 6.8 4.2 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ns ⎯ ⎯ ⎯ ⎯ ⎯ nC pF Unit µA µA V V mΩ S Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (“miller”) charge VDD ∼ −15 V − < 1%, tw = 10 µs Duty = 596 184 12 58 Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition ⎯ IDR = −40 A, VGS = 0 V Min ⎯ ⎯ Typ. ⎯ ⎯ Max −120 1.2 Unit A V 3 2006-11-16 TPCA8103 ID – VDS −50 −4 −100 −3 −2.8 −10 −6 −30 −2.6 −8 −80 Common source Ta = 25°C Pulse test −2.4 −20 −2.2 −10 VGS = −2 V 0 0 −1 −2 −3 −4 −5 0 0 −0.2 −8 −10 ID – VDS Common source Ta = 25°C Pulse test −4 −3.2 −3.1 −3.0 −40 −2.8 −20 −40 −6 (A) ID ID Drain current (A) −60 Drain current −2.6 VGS = −2.4 V −0.4 −0.6 −0.8 −1.0 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS −100 Common source VDS = −10 V Pulse test Ta = −55°C −60 25 100 −0.5 VDS – VGS Common source Ta = 25°C Pulse test −80 (V) VDS Drain-source voltage −0.4 ID (A) −0.3 Drain current −40 −0.2 −10 −0.1 −20 ID = −40 A −20 0 0 −2 −4 −6 −8 −10 0 0 −4 −8 −12 −16 −20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| – ID (S) 100 100 RDS (ON) – ID Forward transfer admittance ⎪ Yfs⎪ 100 10 25 Drain-source ON resistance RDS (ON) (mΩ) Ta = −55°C 10 VGS = −4 V −10 1 1 0.1 −0.1 Common source VDS = −10 V Pulse test −1 −10 −100 0.1 −0.1 Common source Ta = 25°C Pulse test −1 −10 −100 Drain current ID (A) Drain current ID (A) 4 2006-11-16 TPCA8103 RDS (ON) – Ta 20 Common source Pulse test −1000 IDR – VDS Drain reverse current IDR (A) Drain-source ON resistance RDS (ON) (mΩ) 15 −100 −10 −5 −3 10 ID = −40 A, −20 A, −10 A −10 −1 VGS = 0 V 5 VGS = −4 V ID = −40 A, −20 A, −10 A 0 40 80 120 160 −1 Common source Ta = 25°C Pulse test −0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 −10 V 0 −80 −40 Ambient temperature Ta (°C) Drain-source voltage VDS (V) Capacitance – VDS 100000 −2.0 Vth – Ta Common source VDS = −10 V −1.6 ID = −1 mA Pulse test 10000 Ciss C Gate threshold voltage −100 Vth (V) (pF) −1.2 Capacitance Coss 1000 Common source VGS = 0 V f = 1 MHz Ta = 25°C 100 −0.1 −1 −10 Crss −0.8 −0.4 Drain-source voltage VDS (V) 0 −80 −40 0 40 80 120 160 Ambient temperature Ta (°C) Dynamic input/output characteristics −30 Common source VDD = −24 V VDS −20 ID = −13 A Ta = 25°C Pulse test −20 −30 (V) Drain-source voltage −12 −10 −6 −6 −12 −10 VDD = −24 V VGS 0 0 40 80 120 160 200 0 240 Total gate charge Qg (nC) Gate-source voltage VGS (V) VDS 5 2006-11-16 TPCA8103 rth – tw TRANSIENT THERMAL IMPEDANCE rth (℃/W) 1000 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) 100 (Note 2b) (3) Tc=25℃ (1) (2) 10 (3) 1 SINGLE PULSE 0.1 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH tw (s) PD – Ta 3 (1) (1)Device mounted on a glass-epoxy board(a) (Note 2a) (2)Device mounted on a glass-epoxy board(b) ｔ＝ 10s (Note 2b) PD – Tc 50 2.5 DRAIN POWER DISSIPATION PD (W) DRAIN POWER DISSIPATION PD (W) 40 2 (2) 1.5 30 20 1 0.5 10 0 0 40 80 120 160 0 0 40 80 120 160 AMBIENT TEMPERATURE Ta (°C) CASE TEMPERATURE Tc (°C) SAFE OPERATING AREA 1000 DRAIN CURRENT ID (A) ID max (PULSED) * 100 t=1ms t=10ms 10 ID max (CONTINUOUS) * DC ※ SINGLE NONREPETITIVE PULSE 1 CURVES LINEARLY Tc=25℃ MUST WITH BE DERATED IN INCREASE TEMPERATURE. 0.1 0.1 VDSS max 1 10 100 DRAIN-SOURCE VOLTAGE VDS (V) 6 2006-11-16 TPCA8103 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 2006-11-16