TPCP8507

TPCP8507 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8507 High-Speed Switching Applications DC/DC Converters • • • Unit: mm 0.33±0.05 0.05 M A 8 5 2.4±0.1 0.475 1 4 Low collector-emitter saturation voltage: VCE(sat) = 0.14 V (max) High-speed switching: tf = 0.2 μs (typ.) B Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Collector-emitter voltage Collector-emitter voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range t = 10 s DC DC (Note 1) Symbol VCBO VCEX VCEO VEBO IC ICP IB PC (Note 2) Tj Tstg Rating 180 150 120 7 1.0 2.0 0.1 3.00 1.25 150 −55~150 Unit V V V V A A A W W °C °C S 0.65 2.9±0.1 0.05 M B A 0.8±0.05 0.025 S 0.17±0.02 0.28 +0.1 -0.11 +0.13 1.12 -0.12 1.12 +0.13 -0.12 0.28 +0.1 -0.11 Pulsed (Note 1) 2. Collector Collector 3. Collector 4. Base 1. Emitter Collector 7. Collector 8. Collector 5. 6. JEDEC JEITA TOSHIBA ⎯ ⎯ 2-3V1A Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device. Note 2: Mounted on an FR4 board (glass epoxy; 1.6 mm thick; Cu area, 645 mm2) Weight: 0.017 g (typ.) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-13 2.8±0.1 High DC current gain: hFE = 120~300 (IC = 0.1 A) TPCP8507 Figure 1. Circuit configuration (top view) 8　 7 　6 　 5 Figure 2. 8 7 6 Marking (Note 4) 5 8507 * Type Lot No. 1 　 2　 3　 4 Note 4: on lower left of the marking indicates Pin 1. * Weekly code: (Three digits) Week of manufacture 1 2 3 4 (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) Electrical Characteristics (Ta = 25°C) Characteristic Collector cutoff current Emitter cutoff current Collector-emitter breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Storage time Switching time Storage time Fall time Symbol ICBO IEBO V (BR) CBO V (BR) CEO hFE(1) hFE(2) VCE (sat) VBE (sat) tr tstg tf Test Condition VCB = 180 V, IE = 0 VEB = 7 V, IC = 0 IC = 1 mA, IB = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 0.1A VCE = 2 V, IC = 0.3A IC = 0.3 A, IB = 0.01A IC = 0.3 A, IB = 0.01A See Figure 3 circuit diagram. VCC ≅ 72 V, RL = 240 Ω IB1 = −IB2 = 10mA Min ⎯ ⎯ 180 120 120 60 ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.1 1.5 0.2 Max 100 100 ⎯ ⎯ 300 ⎯ 0.14 1.1 ⎯ ⎯ ⎯ μs V V Unit nA nA V V Figure 3. Switching Time Test Circuit & Timing Chart VCC RL 20 μ s IN IB1 IB2 IB2 IB1 OUT Duty cycle < 1 % 2 2006-11-13 TPCP8507 IC – VCE 1.0 −10 −8 1000 −6 hFE – IC 100 IC (A) 0.8 −5 hFE −4 0.6 −3 0.4 IB = −1 mA 0.2 Common emitter Ta = 25°C Single nonrepetitive pulse 0 2 4 6 8 10 12 −2 25 100 Ta = −55°C Collector current DC current gain 10 Common emitter VCE = 2 V Single nonrepetitive pulse 1 0.001 0.01 0. 1 1 10 0 Collector-emitter voltage VCE (V) Collector current IC (A) VCE (sat) – IC 1 10 VBE (sat) – IC Common emitter β = 30 Single nonrepetitive pulse Collector-emitter saturation voltage β = 30 Single nonrepetitive pulse Base-emitter saturation voltage Common emitter VCE (sat) (V) VBE (sat) (V) 0.1 Ta = −55°C 1 100 25 Ta = −55°C 25 100 0.01 0.001 0.01 0.1 1 0.1 0.001 0.01 0.1 1 Collector current IC (A) Collector current IC (A) IC– VBE 1.0 Common emitter 0.8 VCE = 2 V Single nonrepetitive pulse 0.6 100 0.4 Collector current IC (A) 0.2 25 Ta = −55°C 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-emitter voltage VBE (V) 3 2006-11-13 TPCP8507 rth – tw 1000 Curves apply only to limited areas of thermal resistance. Single nonrepetitive pulse Ta = 25°C Transient thermal resistance rth (°C/W) Mounted on an FR4 board (glass epoxy; 1.6 mm thick; Cu area, 645 mm2) 100 10 1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (S) Safe Operating Area 10 IC max (pulsed)* 10ms* 1ms* 100μs* 10μs* IC (A) 1 IC max (continuous) Collector current DC operation Ta = 25°C 0.1 *:Single nonrepetitive pulse Ta = 25°C Note that the curves for 100ms*,10s* and DC operation will be different 1 0 s* 100 ms* VCEO max 10 100 1000 0.01 when the devices aren’t mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2).These characteristic curves must be derated linearly with increase in temperature. 0.001 0.1 1 Collector-emitter voltage VCE (V) 4 2006-11-13 TPCP8507 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-13