TPH2R306NH,L1Q

TPH2R306NH MOSFETs Silicon N-channel MOS (U-MOS-H) TPH2R306NH 1. Applications • DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 26 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP Advance(N) The package can be selected according to your preference. For details, please contact your TOSHIBA sales representative. Start of commercial production ©2019 Toshiba Electronic Devices & Storage Corporation 1 2012-11 2019-10-24 Rev.3.0 TPH2R306NH  unless otherwise specified) 4. Absolute Maximum Ratings (Note) (Ta = 25 25 Characteristics Symbol Rating Unit V Drain-source voltage VDSS 60 Gate-source voltage VGSS ±20 Drain current (DC) (Silicon limit) (Note 1), (Note 2) ID 130 Drain current (DC) (Tc = 25) (Note 1) ID 60 (t = 1 ms) (Note 1) IDP 200 PD 78 W Drain current (pulsed) A Power dissipation (Tc = 25) Power dissipation (t = 10 s) (Note 3) PD 2.8 W Power dissipation (t = 10 s) (Note 4) PD 1.6 W (Note 5) EAS 453 mJ IAR 60 A  Single-pulse avalanche energy Avalanche current Channel temperature Tch 150 Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance (Tc = 25) Symbol Max Unit Rth(ch-c) 1.60 /W Channel-to-ambient thermal resistance (t = 10 s) (Note 3) Rth(ch-a) 44.6 /W Channel-to-ambient thermal resistance (t = 10 s) (Note 4) Rth(ch-a) 78.1 /W Note 1: Ensure that the channel temperature does not exceed 150. Note 2: Limited by silicon chip capability. Package limit is 60 A. Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 5: VDD = 48 V, Tch = 25 (initial), L = 0.097 mH, IAR = 60 A Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a) Note: Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b) This transistor is sensitive to electrostatic discharge and should be handled with care. ©2019 Toshiba Electronic Devices & Storage Corporation 2 2019-10-24 Rev.3.0 TPH2R306NH 6. Electrical Characteristics  unless otherwise specified) 6.1. Static Characteristics (Ta = 25 25 Characteristics Symbol Gate leakage current Drain cut-off current Drain-source breakdown voltage IGSS VGS = ±20 V, VDS = 0 V Min Typ. Max Unit   ±0.1 µA IDSS VDS = 60 V, VGS = 0 V   10 V(BR)DSS ID = 10 mA, VGS = 0 V 60   V(BR)DSX ID = 10 mA, VGS = -20 V 45   Vth VDS = 10 V, ID = 1.0 mA 2.0  4.0 VGS = 6.5 V, ID = 15 A  2.6 4.7 VGS = 10 V, ID = 30 A  1.9 2.3 Min Typ. Max Unit  4700 6100 pF Gate threshold voltage Drain-source on-resistance Test Condition RDS(ON) V mΩ  unless otherwise specified) 6.2. Dynamic Characteristics (Ta = 25 25 Characteristics Symbol Input capacitance Ciss Test Condition VDS = 30 V, VGS = 0 V, f = 1 MHz Reverse transfer capacitance Crss  55 100 Output capacitance Coss  1500  Gate resistance rg   1.0 1.5 Ω Switching time (rise time) tr See Figure 6.2.1.  9.9  ns Switching time (turn-on time) ton  29  tf  16  toff  50  Min Typ. Max Unit  72  nC Switching time (fall time) Switching time (turn-off time) Fig. 6.2.1 Switching Time Test Circuit  unless otherwise specified) 25 6.3. Gate Charge Characteristics (Ta = 25 Characteristics Symbol Total gate charge (gate-source plus gate-drain) Test Condition VDD ≈ 30 V, VGS = 10 V, ID = 60 A Qg Gate-source charge 1 Qgs1  25  Gate-drain charge Qgd  17  Gate switch charge QSW  26  Min Typ. Max Unit  unless otherwise specified) 6.4. Source-Drain Characteristics (Ta = 25 25 Characteristics Reverse drain current (pulsed) Symbol (Note 6) Diode forward voltage Test Condition IDRP    200 A VDSF IDR = 60 A, VGS = 0 V   -1.2 V Note 6: Ensure that the channel temperature does not exceed 150. ©2019 Toshiba Electronic Devices & Storage Corporation 3 2019-10-24 Rev.3.0 TPH2R306NH 7. Marking Fig. 7.1 Marking ©2019 Toshiba Electronic Devices & Storage Corporation 4 2019-10-24 Rev.3.0 TPH2R306NH 8. Characteristics Curves (Note) Fig. 8.1 ID - VDS Fig. 8.2 ID - VDS Fig. 8.3 ID - VGS Fig. 8.4 VDS - VGS Fig. 8.5 RDS(ON) - ID Fig. 8.6 RDS(ON) - Ta ©2019 Toshiba Electronic Devices & Storage Corporation 5 2019-10-24 Rev.3.0 TPH2R306NH Fig. 8.7 IDR - VDS Fig. 8.8 Capacitance - VDS Fig. 8.9 Vth - Ta Fig. 8.10 Dynamic Input/Output Characteristics Fig. 8.11 PD - Ta (Guaranteed Maximum) Fig. 8.12 PD - Tc (Guaranteed Maximum) ©2019 Toshiba Electronic Devices & Storage Corporation 6 2019-10-24 Rev.3.0 TPH2R306NH Fig. 8.13 rth - tw (Guaranteed Maximum) Fig. 8.14 Safe Operating Area (Guaranteed Maximum) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. ©2019 Toshiba Electronic Devices & Storage Corporation 7 2019-10-24 Rev.3.0 TPH2R306NH Package Dimensions Unit: mm The package can be selected according to your preference. For details, please contact your TOSHIBA sales representative. Weight: 0.087 g (typ.) Package Name(s) TOSHIBA: 2-5Q1S Nickname: SOP Advance ©2019 Toshiba Electronic Devices & Storage Corporation 8 2019-10-24 Rev.3.0 TPH2R306NH Package Dimensions Unit: mm The package can be selected according to your preference. For details, please contact your TOSHIBA sales representative. Weight: 0.111 g (typ.) Package Name(s) TOSHIBA: 2-5W1A Nickname: SOP Advance(N) ©2019 Toshiba Electronic Devices & Storage Corporation 9 2019-10-24 Rev.3.0 TPH2R306NH RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". Hardware, software and systems described in this document are collectively referred to as "Product". • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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