XPN3R804NC,L1XHQ

XPN3R804NC MOSFETs Silicon N-channel MOS (U-MOS) XPN3R804NC 1. Applications • Automotive • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 3.0 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (5) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance(WF) Start of commercial production ©2018-2020 Toshiba Electronic Devices & Storage Corporation 1 2018-09 2020-06-24 Rev.4.0 XPN3R804NC 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit V Drain-source voltage VDSS 40 Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 40 Drain current (pulsed) (Note 1) IDP 80 Power dissipation (Tc = 25 ) Power dissipation (t = 10 s) (Note 2) PD Power dissipation (t = 10 s) (Note 3) Single-pulse avalanche energy A 100 W 2.27 0.84 (Note 4) EAS IAS 40 A Channel temperature (Note 5) Tch 175  Storage temperature (Note 5) Tstg -55 to 175 Single-pulse avalanche current Note: 177 mJ Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Channel-to-case thermal impedance (Tc = 25 ) Symbol Max Unit zth(ch-c) 1.5 /W Channel-to-ambient thermal impedance (t = 10 s) (Note 2) zth(ch-a) 66 Channel-to-ambient thermal impedance (t = 10 s) (Note 3) zth(ch-a) 178 Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 4: VDD = 32 V, Tch = 25  (initial), L = 85 µH, RG = 1Ω, IAS = 40 A Note 5: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101. Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a) Note: Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b) This transistor is sensitive to electrostatic discharge and should be handled with care. ©2018-2020 Toshiba Electronic Devices & Storage Corporation 2 2020-06-24 Rev.4.0 XPN3R804NC 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25  unless otherwise specified) Characteristics Symbol Gate leakage current IGSS VGS = ±16 V, VDS = 0 V Drain cut-off current Drain-source breakdown voltage Min Typ. Max Unit   ±10 µA IDSS VDS = 40 V, VGS = 0 V   10 V(BR)DSS ID = 10 mA, VGS = 0 V 40   V(BR)DSX ID = 10 mA, VGS = -20 V 20   Vth VDS = 10 V, ID = 0.3 mA 1.5  2.5 VGS = 4.5 V, ID = 20 A  4.8 7.8 VGS = 10 V, ID = 20 A  3.0 3.8 Min Typ. Max Unit  2230  pF Gate threshold voltage Drain-source on-resistance Test Condition RDS(ON) V mΩ 6.2. Dynamic Characteristics (Ta = 25  unless otherwise specified) Characteristics Symbol Input capacitance Ciss Test Condition VDS = 10 V, VGS = 0 V, f = 1 MHz Reverse transfer capacitance Crss  110  Output capacitance Coss  1250   2.4  Ω  17  ns Gate resistance rg Switching time (rise time) tr Switching time (turn-on time) ton  38  tf  17  toff  66  ns Switching time (fall time) Switching time (turn-off time) See Fig. 6.2.1 VDD ≈ 20 V VGS = 0 V/ 10 V ID = 20 A RL = 1.0 Ω RGG = 4.7 Ω RGS = 4.7 Ω Duty ≤ 1 %, tw = 10 µs Fig. 6.2.1 Switching Time Test Circuit 6.3. Gate Charge Characteristics (Ta = 25  unless otherwise specified) Characteristics Symbol Total gate charge (gate-source plus gate-drain) Test Condition VDD ≈ 32 V, VGS = 10 V, ID = 40 A Qg Min Typ. Max Unit  35  nC Gate-source charge 1 Qgs1  8  Gate-drain charge Qgd  7.2  6.4. Source-Drain Characteristics (Ta = 25  unless otherwise specified) Characteristics Reverse drain current (pulsed) (Note 6) Diode forward voltage Symbol Test Condition Min Typ. Max Unit IDRP    80 A   -1.2 V VDSF IDR = 40 A, VGS = 0 V Note 6: Ensure that the channel temperature does not exceed 175 . ©2018-2020 Toshiba Electronic Devices & Storage Corporation 3 2020-06-24 Rev.4.0 XPN3R804NC 7. Marking Fig. 7.1 Marking ©2018-2020 Toshiba Electronic Devices & Storage Corporation 4 2020-06-24 Rev.4.0 XPN3R804NC 8. Characteristics Curves (Note) Fig. 8.1 ID - VDS Fig. 8.2 ID - VDS Fig. 8.3 VDS - VGS Fig. 8.4 VDS - VGS Fig. 8.5 VDS - VGS Fig. 8.6 VDS - VGS ©2018-2020 Toshiba Electronic Devices & Storage Corporation 5 2020-06-24 Rev.4.0 XPN3R804NC Fig. 8.7 ID - VGS Fig. 8.8 RDS(ON) - ID Fig. 8.9 RDS(ON) - Ta Fig. 8.10 IDR - VDS Fig. 8.11 V(BR)DSS - Ta Fig. 8.12 Vth - Ta ©2018-2020 Toshiba Electronic Devices & Storage Corporation 6 2020-06-24 Rev.4.0 XPN3R804NC Fig. 8.13 Capacitance - VDS Fig. 8.14 Dynamic Input/Output Characteristics Fig. 8.15 EAS - Tch Fig. 8.16 Test Circuit/Waveform ©2018-2020 Toshiba Electronic Devices & Storage Corporation 7 2020-06-24 Rev.4.0 XPN3R804NC Fig. 8.17 zth(ch-c) - tw (Guaranteed Maximum) Fig. 8.18 PD - Tc (Guaranteed Maximum) Note: Fig. 8.19 Safe Operating Area (Guaranteed Maximum) The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. ©2018-2020 Toshiba Electronic Devices & Storage Corporation 8 2020-06-24 Rev.4.0 XPN3R804NC Package Dimensions Unit: mm Weight: 0.029 g (typ.) Package Name(s) TOSHIBA: 2-3X2A Nickname: TSON Advance(WF) ©2018-2020 Toshiba Electronic Devices & Storage Corporation 9 2020-06-24 Rev.4.0 XPN3R804NC RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". Hardware, software and systems described in this document are collectively referred to as "Product". • TOSHIBA reserves the right to make changes to the information in this document and related Product without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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