TC3879

TC3879 PRE1_20070518 Preliminary 7 W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES ! 7W Typical Output Power ! 10.5dB Typical Linear Power Gain at 2.45 GHz ! High Linearity: IP3 = 48.5 dBm Typical ! High Power Added Efficiency: Nominal PAE of 35% ! Breakdown Voltage: BVDGO ≥ 18V ! 100 % DC Tested ! Suitable for High Reliability Application PHOTO ENLARGEMENT DESCRIPTION The TC3879 is a self-bias flange ceramic packaged device with PHEMT GaAs FETs, which is designed to provide the single power supply. The flange ceramic package provides excellent thermal conductivity for the GaAs FET. The device is suitable for oscillators and power amplifiers in a wide range of commercial application. All devices are 100% DC tested to assure consistent quality. ELECTRICAL SPECIFICATIONS (@ 2.45 GHz) Symbol P1dB GL IP3 PAE IDS BVDGO Rth Linear Power Gain VDS = 10 V Intercept Point of the 3 -order Intermodulation VDS = 10 V, *PSCL = 27 dBm Power Added Efficiency at 1dB Compression Power Drain-Source Current at VDS = 10 V Drain-Gate Breakdown Voltage at IDGO = 7.5mA Thermal Resistance 18 rd CONDITIONS Output Power at 1dB Gain Compression Point VDS = 10 V MIN TYP 38.5 10.5 48.5 35 1750 22 1.8 MAX UNIT dBm dB dBm % mA Volts °C/W Note: *PSCL: Output Power of Single Carrier Level. TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P1/2 TC3879 PRE1_20070518 FLANGE PACKAGE OUTLINE (Unit: mm) Gate Source Source Drain TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P2/2