TC3977
PRE2_20050418
Preliminary
3 W Packaged Single-Bias PHEMT GaAs Power FETs
FEATURES
• 3W Typical Output Power • 12dB Typical Linear Power Gain at 2.45GHz • High Linearity: IP3 = 45 dBm Typical • High Power Added Efficiency: Nominal PAE of 35% • Breakdown Voltage: BVDGO ≥ 18V • Wg = 7.5 mm • 100 % DC Tested
PHOTO ENLARGEMENT
• Suitable for High Reliability Application
DESCRIPTION
The TC3977 is a single-bias Cu-based ceramic packaged device with TC1706N PHEMT GaAs FETs, which is designed to provide the single power supply. The Cu-based ceramic package provides excellent thermal conductivity for the GaAs FET. The device is suitable for oscillator and power amplifiers in a wide range of commercial application. All devices are 100% DC tested to assure consistent quality.
ELECTRICAL SPECIFICATIONS (@ 2.45 GHz)
Symbol P1dB GL IP3 PAE IDS BVDGO Rth Linear Power Gain VDS = 10 V Intercept Point of the 3 -order Intermodulation VDS = 10 V, *PSCL = 24 dBm Power Added Efficiency at 1dB Compression Power Drain-Source Current at VDS = 10 V Drain-Gate Breakdown Voltage at IDGO = 3.75mA Thermal Resistance 18
rd
CONDITIONS Output Power at 1dB Gain Compression Point VDS = 10 V
MIN
TYP
MAX
UNIT
34.5
35.5 12 45 35 900 22 5.3
dBm dB dBm % mA Volts °C/W
Note: *PSCL: Output Power of Single Carrier Level.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P1/1
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