FDP3682

Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on T K2150 STEREO 200W (6 Ω ) CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSING T M T ECHNOLOGY Technical Information - Preliminary Revision 1.0 – December 2002 GENERAL DESCRIPTION The TK2150 (TC2001/TP2150 chipset) is a two-channel, 200W (6Ω) per channel Amplifier Driver that uses Tripath’s proprietary Digital Power Processing (DPPTM) technology. Class-T amplifiers offer both the audio fidelity of Class-AB and the power efficiency of Class-D amplifiers. A pplications Powered DVD Players Audio/Video Amplifiers & Receivers Automobile Power Amplifiers Subwoofer Amplifiers Pro-audio Amplifiers F eatures Class-T architecture Pin compatible with Tripath TK2350 Chipset Proprietary Digital Power Processing technology “Audiophile” Sound Quality 0.012% THD+N @ 60W, 8Ω 0.02% IHF-IM @ 30W, 8Ω High Efficiency 93% @ 120W @ 8Ω 91% @ 150W @ 6Ω Supports wide range of output power levels Up to 200W/channel (6Ω), single-ended outputs, @+/- 45V Up to 400W (8Ω), bridged outputs, @+/- 30V Output over-current protection Over- and under-voltage protection Over-temperature protection B enefits Reduced system cost with smaller/less expensive power supply and heat sink Signal fidelity equal to high quality Class-AB amplifiers High dynamic range compatible with digital media such as CD and DVD Typical Performance for TK2150 10 T HD+N versus Output Power versus Supply Voltage 5 R L = 6Ω Vs = +35V, +40V, +45V 2 f = 1kHz BBM = 40nS 1 BW = 22hZ - 20kHz(AES17) 0.5 NOTE: +45V test uses R F BC=11k Ω (see Application/ Test Circuit) 0.2 % 0.1 0.05 0.02 0.01 0.005 0.002 0.001 1 2 5 10 W 20 50 100 200 1 TK2150 – Rev. 1.0/12.02 Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on Absolute Maximum Ratings TC2001 (Note 1) SYMBOL V5 Vlogic TA TSTORE TJMAX ESDHB 5V Power Supply Input Logic Level Operating Free-air Temperature Range Storage Temperature Range Maximum Junction Temperature ESD Susceptibility – Human Body Model (Note 2) All pins PARAMETER Value 6 V5+0.3V -40° to +85° -55° to 150° 150° 2000 UNITS V V °C °C °C V Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. See the table below for Operating Conditions. Note 2: Human body model, 100pF discharged through a 1.5KΩ resistor. Absolute Maximum Ratings TP2150 (Note 3) SYMBOL VPP, VNN VN10 TSTORE TA TJ ESDHB ESDMM Supply Voltage Voltage for FET drive Storage Temperature Range Operating Free-air Temperature Range (Note 4) Junction Temperature ESD Susceptibility – Human Body Model (Note 5) All pins ESD Susceptibility – Machine Model (Note 6) All pins PARAMETER Value +/- 65 VNN+13 -55º to 150º -40º to 85º 150º 2000 TBD UNITS V V °C °C °C V V Note 3: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. See the table below for Operating Conditions. Note 4: This is a target specification. Characterization is still needed to validate this temperature range. Note 5: Human body model, 100pF discharged through a 1.5KΩ resistor. Note 6: Machine model, 220pF – 240pF discharged through all pins. Operating Conditions TC2001 SYMBOL V5 VHI VLO TA Supply Voltage Logic Input High Logic Input Low Operating Temperature Range (Note 7) PARAMETER MIN. 4.5 V5-1.0 TYP. 5 MAX. 5.5 1 UNITS V V V °C -40° 25° 85° Note 7: Recommended Operating Conditions indicate conditions for which the device is functional. See Electrical Characteristics for guaranteed specific performance limits. Operating Conditions TP2150 (Note 8) SYMBOL VPP, VNN VN10 Supply Voltage Voltage for FET drive (Volts above VNN) PARAMETER MIN. +/- 15 9 TYP. +/-30 10 MAX. +/- 60 12 UNITS V V Note 8: Recommended Operating Conditions indicate conditions for which the device is functional. See Electrical Characteristics for guaranteed specific performance limits. 2 TK2150 – Rev. 1.0/12.02 Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on Operating Characteristics TC2001 SYMBOL I5 VIN VOUTHI VOUTLO Supply Current Input Sensitivity High Output Voltage Low Output Voltage Input DC Bias (Note 9) PARAMETER MIN. 0 V5-0.5 TYP. 50 MAX. 1.5 100 UNITS mA V V mV V 2.4 Note 9: Recommended Operating Conditions indicate conditions for which the device is functional. See Electrical Characteristics for guaranteed specific performance limits. Thermal Characteristics TC2001 SYMBOL θJA PARAMETER Junction-to-ambient Thermal Resistance (still air) Value 80° UNITS C/W Thermal Characteristics TP2150 SYMBOL θJC PARAMETER Junction-to-case Thermal Resistance Value TBD° UNITS C/W Electrical Characteristics TC2001 (Note 10) TA = 25 °C. See Application/Test Circuit on page 7. Unless otherwise noted, the supply voltage is VPP=|VNN|=45V. SYMBOL Iq IMUTE VIH VIL VOH VOL VTOC IVPPSENSE PARAMETER Quiescent Current (Mute = 0V) Mute Supply Current (Mute = 5V) High-level input voltage (MUTE) Low-level input voltage (MUTE) High-level output voltage (HMUTE) IOH = 3mA Low-level output voltage (HMUTE) Over Current Sense Voltage Threshold VPPSENSE Threshold Currents IOL = 3mA TBD Over-voltage turn on (muted) Over-voltage turn off (mute off) Under-voltage turn off (mute off) Under-voltage turn on (muted) Over-voltage turn on (muted) Over-voltage turn off (mute off) Under-voltage turn off (mute off) Under-voltage turn on (muted) Over-voltage turn on (muted) Over-voltage turn off (mute off) Under-voltage turn off (mute off) Under-voltage turn on (muted) Over-voltage turn on (muted) Over-voltage turn off (mute off) Under-voltage turn off (mute off) Under-voltage turn on (muted) TBD 138 62 49.3 22.1 152 65 -49.2 -21.1 1.0 162 154 79 72 57.8 55.0 28.2 25.7 174 169 86 77 -56.4 -54.8 -27.9 -24.9 4.0 0.5 TBD 178 87 63.5 31.1 191 95 -61.9 -30.8 V5 = 5V V5 = 5V 3.5 1.0 CONDITIONS MIN. TYP. 45 20 MAX. 60 25 UNITS mA mA V V V V V µA µA µA µA V V V V µA µA µA µA V V V V VVPPSENSE Threshold Voltages with RVPP1 = RVPP1 = 357KΩ (Note 11, Note 12) IVNNSENSE VNNSENSE Threshold Currents VVNNSENSE Threshold Voltages with RVNN1 = 324KΩ RVNN2 = 976KΩ (Note 11, Note 12) Note 10: Minimum and maximum limits are guaranteed but may not be 100% tested. 3 TK2150 – Rev. 1.0/12.02 Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on Note 11: These supply voltages are calculated using the IVPPSENSE and IVNNSENSE values shown in the Electrical Characteristics table. The typical voltage values shown are calculated using a RVPP and RVNN values without any tolerance variation. The minimum and maximum voltage limits shown include either a +1% or –1% (+1% for Over-voltage turn on and Under-voltage turn off, -1% for Over-voltage turn off and Under-voltage turn on) variation of RVPP or RVNN off the nominal 357kohm, 324kohm, and 976kohm values. These voltage specifications are examples to show both typical and worst case voltage ranges for the given RVPP and RVNN resistor values. Please refer to the Application Information section for a more detailed description of how to calculate the over and under voltage trip voltages for a given resistor value. Note 12: The fact that the over-voltage turn on specifications exceed the absolute maximum of +/-60V for the TK2150 does not imply that the part will work at these elevated supply voltages. It also does not imply that the TK2150 is tested or guaranteed at these supply voltages. The supply voltages are simply a calculation based on the process spread of the IVPPSENSE and IVNNSENSE currents (see note 7). The supply voltage must be maintained below the absolute maximum of +/-60V or permanent damage to the TK2150 may occur. Electrical Characteristics TP2150 (Note 13) TA = 25 °C. See Application/Test Circuit on page 7. Unless otherwise noted, the supply voltage is VPP=|VNN|=45V. SYMBOL Iq IMUTE PARAMETER Quiescent Current (No load, BBM0=1,BBM1=0, Mute = 0V) Mute Supply Current (No load, Mute = 5V) CONDITIONS VPP = +45V VNN = -45V (Note 14) VPP = +45V VNN = -45V MIN. TYP. 25 45 1 1 MAX. UNITS mA mA mA mA Note 13: Minimum and maximum limits are guaranteed but may not be 100% tested. Note 14: The difference in the VPP and VNN current draw is due to the VN10 regulator sourcing current to the VNN supply. Performance Characteristics TK2150 – Single Ended TA = 25 °C. Unless otherwise noted, the supply voltage is VPP=|VNN|=45V, the input frequency is 1kHz and the measurement bandwidth is 20kHz. See Application/Test Circuit. SYMBOL POUT PARAMETER Output Power (continuous RMS/Channel) CONDITIONS THD+N = 0.1%, RL = 8Ω RL = 6Ω THD+N = 1%, RL = 8Ω RL = 6Ω POUT = 70W/Channel, RL = 8Ω 19kHz, 20kHz, 1:1 (IHF), RL = 8Ω POUT = 30W/Channel A Weighted, RL = 6Ω, POUT = 155W/Channel 0dBr = 30W, RL = 8Ω, f = 1kHz POUT = 150W/Channel, RL = 8Ω POUT = 10W/Channel, RL = 6Ω See Application / Test Circuit POUT = 10W/Channel, RL = 6Ω See Application / Test Circuit A Weighted, no signal, input shorted, DC offset nulled to zero, RFBC = 11kΩ No Load, Mute = Logic Low 0.1% RFBA, RFBB, RFBC resistors MIN. TYP. 100 135 120 155 0.012 0.02 104.5 92 93 13.3 0.5 180 -1.0 1.0 MAX. UNITS W W W W % % dB dB % V/V dB µV THD + N IHF-IM SNR CS η Total Harmonic Distortion Plus Noise IHF Intermodulation Distortion Signal-to-Noise Ratio Channel Separation Power Efficiency Amplifier Gain Channel to Channel Gain Error Output Noise Voltage Output Offset Voltage AV AVERROR eNOUT VOFFSET V 4 TK2150 – Rev. 1.0/12.02 Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on TK2150 Block Diagram Input Left Input Right T C2001 Audio Signal Processor TP2150 MOSFET Driver LC Filter Output MOSFETs LC Filter Output Left Output Right 5 TK2150 – Rev. 1.0/12.02 Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on TC2001 Pinout 28-pin SOIC (Top View) BIASCAP FBKGND2 DCMP FBKOUT2 VPWR FBKGND1 FBKOUT1 HM UTE Y1 Y1B Y2B Y2 NC OCD2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 INV2 OAOUT2 BBM0 BBM1 M UTE INV1 OAOUT1 V5 AGND VPPSENSE OVRLDB VNNSENSE OCD1 R EF TP2150 Pinout 64-pin LQFP (Top View) HO1COM HO2COM LO1COM OCS2HN OCS1HP OCS1HN VN10 VN10 OCS2HP 32 31 30 29 28 27 26 25 24 23 22 21 20 1 2 3 4 5 6 78 9 10 11 12 13 14 15 16 17 18 19 VNN HO1 LO1 LO2 HO2 NC NC LO2COM 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 NC OCS2LN OCS2LP NC NC VBOOT2 NC NC NC NC NC NC NC NC OCS1LN OCS1LP NC NC VBOOT1 NC SW -FB SMPSO NC SLEEP NC NC 52 53 54 55 56 57 58 59 60 61 62 63 64 NC NC Y1 Y1B NC OCD1 OCD2 CSS A GND AGND 6 Y2B NC NC NC NC NC NC NC NC V5 Y2 TK2150 – Rev. 1.0/12.02 Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on TC2001 Audio Signal Processor Pin Descriptions Pin 1 2, 6 3 4, 7 5 8 9, 12 10, 11 13 14 15 16 17 18 19 20 21 22, 27 23, 28 24 25, 26 Function BIASCAP FBKGND2, FBKGND1 DCMP FBKOUT2, FBKOUT1 VPWR HMUTE Y1, Y2 Y1B, Y2B NC OCD2 REF OCD1 VNNSENSE OVRLDB VPPSENSE AGND V5 OAOUT1, OAOUT2 IN1, IN2 MUTE BBM1, BBM0 Description Bandgap reference times two (typically 2.5VDC). Used to set the common mode voltage for the input op amps. This pin is not capable of driving external circuitry. Ground Kelvin feedback (Channels 1 & 2) Internal mode selection. This pin must be grounded for proper device operation. Switching feedback (Channels 1 & 2) Test pin. Must be left floating. Logic output. A logic high indicates both amplifiers are muted, due to the mute pin state, or a “fault”. Non-inverted switching modulator outputs. Inverted switching modulator outputs. No connect Over Current Detect input. Internal bandgap reference voltage; approximately 1.2 VDC. Over Current Detect input. Negative supply voltage sense input. This pin is used for both over and under voltage sensing for the VNN supply. A logic low output indicates the input signal has overloaded the amplifier. Positive supply voltage sense input. This pin is used for both over and under voltage sensing for the VPP supply. Ground. 5 Volt power supply input. Input stage output pins. Single-ended inputs. Inputs are a “virtual” ground of an inverting opamp with approximately 2.4VDC bias. When set to logic high, both amplifiers are muted and in idle mode. When low (grounded), both amplifiers are fully operational. If left floating, the device stays in the mute mode. Ground if not used. Break-before-make timing control to prevent shoot-through in the output MOSFETs. 7 TK2150 – Rev. 1.0/12.02 Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on TP2150 Pin Description Pin 2,5 6 7 9 10 13,17 14,16 27,57 30,31 33,34 36,48 37,47 39,45 40,44 41,43 42 50,51 53,54 59 60 62 1,3,4,8, 11,12,15, 18,19,20, 21,22,23, 24,25,26, 28,31,32, 35,38,46, 49,52,53, 56,58,61, 63,64 Function AGND V5 OCD1 CSS OCD2 Y2, Y1 Y2B, Y1B VBOOT2, VBOOT1 OCS2LP, OCS2LN OCS2HP, OCS2HN HO2, HO1 HO2COM, HO1COM LO2COM, LO1COM LO2, LO1 VN10 VNN OCS1HN, OCS1HP OCS1LN , OCS1LP SW-FB SMPSO SLEEP NC Description Analog ground. 5V power supply input. Over-current threshold output (Channel 1) Soft startup for VN10 controller, this pin should be tied to V5 Over-current threshold output (Channel 2) Non-inverted switching modulator inputs Inverted switching modulator inputs Bootstrapped voltage to supply drive to gate of high-side FET (Channel 2 & 1) Over Current Sense inputs, Channel 2 low-side Over Current Sense inputs, Channel 2 high-side High side gate drive output (Channel 2 & 1) Kelvin connection to source of high-side transistor (Channel 2 & 1) Kelvin connection to source of low-side transistor (Channel 2 & 1) Low side gate drive output (Channel 2 & 1) “Floating” supply input for the FET drive circuitry. This voltage must be stable and referenced to VNN. Negative supply voltage. Over Current Sense inputs, Channel 1 high-side Over Current Sense inputs, Channel 1 low-side Feedback for regulating switching power supply output for VN10 Switching power supply output for VN10 This pin is active high. Tie this pin to GND for normal operation. Tie this pin to +5V to place the part in sleep mode. Not connected (bonded) internally. Please refer to the Application/Test circuit for details on the how to connect these pins. 8 TK2150 – Rev. 1.0/12.02 Application/Test Circuit 2.5V 7 FBKOUT1 FBKGND1 C FB 150pF *R FBB 1.10K Ω *R FBB 1.10K Ω *R FBC 10.0K Ω *R FBC 10.0K Ω 53 OCS1LN R SW FB 1 k Ω CS 0.1uF CA 0.1uF 200K Ω BIASCAP 6 59 SW -FB 9 CSS C SW FB 0.1uF 1 V5 VN10 Switchm ode Power Supply Controller 60 SMPSO R PG 1 0 Ω VN10 QP FQB17P10TM VNN L SW 100uH, 1A VN10 + 5V MUTE 24 5V 6 V5 CS 0.1uF 8 5 AGND HMUTE 41, 43 VN10 C SW 0.1uF,35V VNN D SW MUR120 C SW 0.1uF C SW 100uF VNN R REF 8.25K Ω , 1 % REF 15 VNN 62 SLEEP 42 VNN VP2 27 V5 33 OCS2HP + CI 2.2uF + IN2 RF 20K Ω 28 + 12 Y2 Y2 13 34 OCS2HN 27 VBOOT2 RS 0.01 Ω , 1 W CS D M UR120 0.1uF B VN10 R B 2 40 Ω DS MUR120 RI 30.1K Ω R OFB 1M Ω AGND 11 Y2B OCD2 C OCR 220pF AGND (Pin 28) R OCR V5 (Pin 21) 30.1K Ω R R FBA FBA 1K Ω 1K Ω *R FBC 10.0K Ω OCD2 10 Y2B 14 36 HO2 R G 2 2, 0.5W QO C HBR C HBR D D M UR120 0.1uF 33uF CB 0.1uF D G S S14* + + V5 (Pin 27) Processing & M odulation 14 37 HO2COM VN10 C OF 0.1uF R OFA 10K Ω Offset Trim Circuit BBM0 Level Shift & FET controller 40 LO2 DS MUR120 R G 2 2, 0.5W QO D S M UR120 LO 18uH 5V 26 2 FBKGND2 C FB 270pF *R FBB 1.10K Ω *R FBB 1.10K Ω *R FBC 10.0K Ω 4 FBKOUT2 BBM1 DCOMP 25 3 39 LO2COM 30 OCS2LP 31 OCS2LN D G S S14* RS 0.01 Ω , 1 W *R VNN1 324K Ω , 1 % VNN VNNSENSE 17 CS 0.1uF *R VPP1 357K Ω , 1 % VPP 19 VPPSENSE 13 NC NC Pins for the TP2150 Pins 1, 3, 4, 8, 11,12, 15, 18, 19, 20, 21, 22, 23, 24, 25, 61, 62, 63, 64 should be tied to analog ground. Pins 26, 28, 29, 32, 35, 38, 46, 49, 52, 55, 56, 58 should be left floating. *R VNN2 976K Ω , 1 % V5 F. BEAD Power Ground Analog Ground *R VPP1 357K Ω , 1 % V5 Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on TK2150 – Rev. 1.0/12.02 * The values of these com ponents m ust be adjusted based on supply voltage range. See Application Inform ation. * Diode DG m ay not be required depending on type of output MOSFET + + 9 TP2150 TC 2001 51 OCS1HP + 5V 21 V5 CS 0.1uF 20 AGND 50 OCS1HN 57 VBOOT1 48 HO1 DS MUR120 RS 0.01 Ω , 1 W CS D M UR120 0.1uF B VN10 R B 2 40 Ω CB 0.1uF + VPP CS 220uF R G 2 2, 0.5W C HBR C HBR D D M UR120 0.1uF 33uF + QO C BAUX 47uF VP1 D G S S14* 22 V5 CI 2.2uF + INV1 23 RF 20K Ω 9 Y1 Y1 VN10 Y1B Y1B 17 16 DS MUR120 47 HO1COM 44 LO1 D G S S14* RS 0.01 Ω , 1 W R G 2 2, 0.5W QO D S M UR120 + Level Shift & FET controller RZ 20 Ω , 2 W CZ 0.15uF RL 6Ω or 8Ω RI 30.1K Ω R OFB 1M Ω AGND 10 Processing & M odulation 16 OCD1 C OCR 220pF AGND (Pin 28) R OCR V5 (Pin 21) 30.1K Ω R R FBA FBA 1K Ω 1K Ω OCD1 LO 18uH CO 0.15uF V5 (Pin 27) 7 45 LO1COM 54 OCS1LP R OFA 10K Ω C OF 0.1uF Offset Trim Circuit AGND VNN CS 220uF VPP CS 220uF C BAUX 47uF CO 0.15uF RZ 20 Ω , 2 W CZ 0.15uF RL 6Ω or 8Ω VNN CS 220uF Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on External Components Description (Refer to the Application/Test Circuit) Components RI RF CI RFBA RFBB Description Inverting input resistance to provide AC gain in conjunction with RF. This input is biased at the BIASCAP voltage (approximately 2.5VDC). Feedback resistor to set AC gain in conjunction with RI. Please refer to the Amplifier Gain paragraph, in the Application Information section. AC input coupling capacitor which, in conjunction with RI, forms a highpass filter at fC = 1 (2πRICI ) . Feedback divider resistor connected to V5. This resistor is normally set at 1kΩ. Feedback divider resistor connected to AGND. This value of this resistor depends on the supply voltage setting and helps set the TK2150 gain in conjunction with RI, RF, RFBA, and RFBC. Please see the Modulator Feedback Design paragraphs in the Application Information Section. Feedback resistor connected from either the OUT1(OUT2) to FBKOUT1(FBKOUT2) or speaker ground to FBKGND1(FBKGND2). The value of this resistor depends on the supply voltage setting and helps set the TK2150 gain in conjunction with RI, RF, RFBA,, and RFBB. It should be noted that the resistor from OUT1(OUT2) to FBKOUT1(FBKOUT2) must have a power rating of greater than PDISS = VPP2 (2RFBC) . Please see the Modulator Feedback Design paragraphs in the Application Information Section. Feedback delay capacitor that both lowers the idle switching frequency and filters very high frequency noise from the feedback signal, which improves amplifier performance. The value of CFB should be offset between channel 1 and channel 2 so that the idle switching difference is greater than 40kHz. Please refer to the Application / Test Circuit. Potentiometer used to manually trim the DC offset on the output of the TK2350. Resistor that limits the manual DC offset trim range and allows for more precise adjustment. Bias resistor. Locate close to pin 15 of the TC2001 and ground at pin 20 of the TC2001. BIASCAP decoupling capacitor. Should be located close to pin 1 of the TC2001 and grounded at pin 20 of the TC2001. Bootstrap diode. This diode charges up the bootstrap capacitors when the output is low (at VNN) to drive the high side gate circuitry. A fast or ultra fast recovery diode is recommended for the bootstrap circuitry. In addition, the bootstrap diode must be able to sustain the entire VPP-VNN voltage. Thus, for most applications, a 150V (or greater) diode should be used. High frequency bootstrap capacitor, which filters the high side gate drive supply. This capacitor must be located as close to VBOOT1 (pin 57 of the TP2150) or VBOOT2 (pin 27 of the TP2150) for reliable operation. The “negative” side of CB should be connected directly to the HO1COM (pin 47 of the TP2150) or HO2COM (pin 37 of the TP2150). Please refer to the Application / Test Circuit. Bulk bootstrap capacitor that supplements CB during “clipping” events, which result in a reduction in the average switching frequency. Bootstrap resistor that limits CBAUX charging current during TK2150 power up (bootstrap supply charging). Supply decoupling for the power supply pins. For optimum performance, these components should be located close to the TC2001 and TP2150 and returned to their respective ground as shown in the Application/Test Circuit. Main overvoltage and undervoltage sense resistor for the negative supply (VNN). Please refer to the Electrical Characteristics Section for the trip points as well as the hysteresis band. Also, please refer to the Over / Under-voltage Protection section in the Application Information for a detailed discussion of the internal circuit operation and external component selection. Secondary overvoltage and undervoltage sense resistor for the negative supply (VNN). This resistor accounts for the internal VNNSENSE bias of 1.25V. Nominal TK2150 – Rev. 1.0/12.02 RFBC CFB ROFA ROFB RREF CA DB CB CBAUX RB CS RVNN1 RVNN2 10 Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on RVPP1 RVPP2 RS ROCR COCR CHBR RG DG CZ RZ LO resistor value should be three times that of RVNN1. Please refer to the Over / Undervoltage Protection section in the Application Information for a detailed discussion of the internal circuit operation and external component selection. Main overvoltage and undervoltage sense resistor for the positive supply (VPP). Please refer to the Electrical Characteristics Section for the trip points as well as the hysteresis band. Also, please refer to the Over / Under-voltage Protection section in the Application Information for a detailed discussion of the internal circuit operation and external component selection. Secondary overvoltage and undervoltage sense resistor for the positive supply (VPP). This resistor accounts for the internal VPPSENSE bias of 2.5V. Nominal resistor value should be equal to that of RVPP1. Please refer to the Over / Undervoltage Protection section in the Application Information for a detailed discussion of the internal circuit operation and external component selection. Over-current sense resistor. Please refer to the section, Setting the Over-current Threshold, in the Application Information for a discussion of how to choose the value of RS to obtain a specific current limit trip point. Over-current “trim” resistor, which, in conjunction with RS, sets the current trip point. Please refer to the section, Setting the Over-current Threshold, in the Application Information for a discussion of how to calculate the value of ROCR. Over-current filter capacitor, which filters the overcurrent signal at the OCR pins to account for the half-wave rectified current sense circuit internal to the TC2001. A typical value for this component is 220pF. In addition, this component should be located near pin 14 or pin 16 of the TC2001 as possible. Supply decoupling for the high current Half-bridge supply pins. These components must be located as close to the output MOSFETs as possible to minimize output ringing which causes power supply overshoot. By reducing overshoot, these capacitors maximize both the TP2150 and output MOSFET reliability. These capacitors should have good high frequency performance including low ESR and low ESL. In addition, the capacitor rating must be twice the maximum VPP voltage. Panasonic EB capacitors are ideal for the bulk storage (nominally 33uF) due to their high ripple current and high frequency design. Gate resistor, which is used to control the MOSFET rise/ fall times. This resistor serves to dampen the parasitics at the MOSFET gates, which, in turn, minimizes ringing and output overshoots. The typical power rating is 1/2 watt. Gate diode, placed in parallel to the gate resistor. This diode will help discharge the parasitic capacitance at the MOSFET gates, thus increasing the MOSFET fall time. This help reduce shoot through current between the top side and bottom side output MOSFETs. This should be a schottky or ultrafast rectifier. This part may not be needed depending on the type of output MOSFET used. Zobel capacitor, which in conjunction with RZ, terminates the output filter at high frequencies. Use a high quality film capacitor capable of sustaining the ripple current caused by the switching outputs. Zobel resistor, which in conjunction with CZ, terminates the output filter at high frequencies. The combination of RZ and CZ minimizes peaking of the output filter under both no load conditions or with real world loads, including loudspeakers which usually exhibit a rising impedance with increasing frequency. Depending on the program material, the power rating of RZ may need to be adjusted. The typical power rating is 2 watts. Output inductor, which in conjunction with CO, demodulates (filters) the switching waveform into an audio signal. Forms a second order filter with a cutoff frequency of f C = 1 ( 2 π L O C O ) and a quality factor of Q = R L C O L O C O . Output capacitor, which, in conjunction with LO, demodulates (filters) the switching waveform into an audio signal. Forms a second order low-pass filter with a cutoff frequency of f C = 1 ( 2 π L O C O ) and a quality factor of Q = R L C O L O C O . Use a high quality film capacitor capable of sustaining the ripple current caused by the switching outputs. CO 11 TK2150 – Rev. 1.0/12.02 Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on DD DS RPG QB DSW LSW CSW RSWFB CSWFB Drain diode. This diode must be connected from the drain of the high side output MOSFET to the drain of the low side output MOSFET. This diode absorbs any high frequency overshoots caused by the output inductor LO during high output current conditions. In order for this diode to be effective it must be connected directly to the drains of both the top and bottom side output MOSFET. A fast or ultra fast recovery diode that can sustain the entire VPP-VNN voltage should be used here. In most applications a 150V or greater diode must be used. Source diode. This diode must be connected from the source of the high side output MOSFET to the source of the low side output MOSFET. This diode absorbs any high frequency undershoots caused by the output inductor LO during high output current conditions. In order for this diode to be effective it must be connected directly to the sources of both the top and bottom sides output MOSFETs. A fast or ultra fast recovery diode that can sustain the entire VPP-VNN voltage should be used here. In most applications a 150V or greater diode must be used. Gate resistor for the output MOSFET for the switchmode power supply. Controls the rise time, fall time, and reduces ringing for the gate of the output MOSFET for the switchmode power supply. Output MOSFET for the switchmode power supply to generate the VN10. This output MOSFET must be a P channel device. Flywheel diode for the internal VN10 buck converter. This diode also prevents VN10SW from going more than one diode drop negative with respect to VNN. This diode should be a Shottky or ultrafast rectifier. VN10 generator filter inductor. This inductor should be sized appropriately so that LSW does not saturate, and VN10 does not overshoot with respect to VNN during TK2150 turn on. VN10 generator filter capacitors. The high frequency capacitor (0.1uF) must be located close to the VN10 pins (pin 41 and 43 of the TP2150) to maximize device performance. The bulk capacitor (100uF) should be sized appropriately such that the VN10 voltage does not overshoot with respect to VNN during TK2150 turn on. VN10 generator feedback resistor. This resistor sets the nominal VN10 voltage. With RSWFB equal to 1kΩ, the VN10 voltage generated will typically be 10V above VNN. VN10 generator feedback capacitor. This capacitor, in conjunction with RSWFB, filters the VN10 feedback signal such that the loop is unconditionally stable. 12 TK2150 – Rev. 1.0/12.02 Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on Typical Performance Characteristics 10 T H D + N ve rs us O utp ut P o w e r 100 90 80 70 E ff ic ie n c y v e r s u s O u tp u t P o w e r f = 1k Hz 5 B B M = 40nS V s = + 40V 2 B W = 2 2 H z - 2 0 k H z (A E S 1 7 ) 1 RL = 8Ω RL = 6Ω 0 .5 Efficiency (%) 0 .2 % 0 .1 0 .0 5 0 .0 2 0 .0 1 0.005 0.002 0.001 1 2 5 10 W 20 50 100 200 60 50 40 30 RL = 8Ω RL = 6Ω 20 10 0 0 20 40 60 80 Vs = + 40V BBM = 40nS B W = 22 H z -2 0kH z (AE S 1 7) TH D +N < 10% 100 120 140 160 W d B r A RL = 6Ω 1 9kHz , 20kHz, 1:1 -20 0dB r = 12V rm s 32k FFT -40 F S = 9 6kHz V S = + 40V -60 B W = 22Hz - 80kHz -80 -100 -120 -140 20 +0 I nterm odulation Perform ance d B r A RL = 8 Ω 1 9kHz, 20k Hz , 1:1 -20 0dB r = 12V rm s 32k FFT -40 F S = 9 6kHz V S = + 40V -60 B W = 22Hz - 80k Hz -80 -100 -120 -140 20 +0 I nterm odulation Perform ance 50 100 200 500 Hz 1k 2k 5k 10k 30k 50 100 200 500 Hz 1k 2k 5k 10k 30k P out = 24W @ 6 Ω -1 0 P o u t = 1 8 W @ 8 Ω 0 d B r = 1 2 V rm s V s = +40 V -2 0 B W = 2 2 H z - 2 0 k H z (A E S 1 7 ) -3 0 d B r A -4 0 -5 0 -6 0 -7 0 -8 0 -9 0 -1 0 0 d B V +0 C h a n n e l S e p a ra tio n v e rs u s F re q u e n c y -7 0 N o is e F lo o r V s = +40V B B M = 40nS -7 5 32k FFT Fs = 48k Hz -8 0 B W = 2 2 H z -2 0 k H z (A E S 1 7 ) -8 5 -9 0 -9 5 -1 0 0 -1 0 5 -1 1 0 R L = 6Ω R L = 8Ω 30 50 100 200 500 Hz 1k 2k 5k 10k 20k -1 1 5 -1 2 0 20 50 100 200 500 Hz 1k 2k 5k 10k 20k 13 TK2150 – Rev. 1.0/12.02 Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on Typical performance Characteristics T HD +N versus Frequency versus Break Before Make 10 R L = 6Ω 5 P out = 25W / Channel 2 Vs = +40V B W = 22Hz-20kHz (A ES 17) 1 T HD+N versus Frequency versus Break Before Make 10 RL = 8Ω 5 P out = 20W/ Channel 2 Vs = +40V 1 BW = 22Hz-20kHz(AES17) 0.5 0.2 % 0.1 0.05 0.02 0.01 0.5 0.2 % 0.1 0.05 0.02 0.01 0.005 0.002 0.001 20 50 100 200 500 Hz 1k 2k 5k 10k 20k B BM = 80nS BBM = 80nS BB M = 40nS 0.005 0.002 0.001 20 50 100 200 500 Hz 1k BBM = 40nS 2k 5k 10k 20k 10 T HD+N versus Frequency versus Bandwidth RL = 6 Ω 5 P out = 25W / Channel 2 Vs = +40V BBM = 40nS 1 10 THD+N versus Frequency versus Bandwidth RL = 8Ω 5 P out = 20W / Channel Vs = + 40V 2 B BM = 40nS 1 0.5 0.2 % 0.1 0.05 0.02 0.01 0.005 0.002 0.001 20 50 100 200 500 Hz 1k 2k 5k 10k 20k 0.5 0.2 % 0.1 0.05 BW = 30kHz BW = 20kHz(AES17) 0.02 0.01 0.005 0.002 0.001 20 50 100 200 BW = 30kHz BW = 20kHz(AES17) 500 Hz 1k 2k 5k 10k 20k 10 T HD+N versus Output Power versus Supply Voltage 5 2 1 R L = 6Ω V s = +35V , +40V, +45V f = 1kHz BBM = 40nS BW = 22hZ - 20kHz(A ES17) NOTE : +45V test uses R F BC=11k Ω (see Application/ Test Circuit) % 0.5 0.2 % 0.1 0.05 0.02 0.01 0.005 0.002 0.001 R L = 8Ω V s = +35V, +40V, +45V f = 1kHz 2 B BM = 40nS 1 B W = 22Hz - 20kHz(A ES17) 0.5 NOTE: +45V test uses R =11k Ω F BC (see Application/ Test Circuit) 0.2 5 0.1 0.05 0.02 0.01 0.005 0.002 10 T HD+N versus Output Power Versus Supply Voltage 1 2 5 10 W 20 50 100 200 0.001 1 2 5 10 W 20 50 100 200 14 TK2150 – Rev. 1.0/12.02 Tr i path Technol ogy, I nc. - Techni cal Information Application Information Figure 1 is a simplified diagram of one channel (Channel 1) of a TK2150 amplifier to assist in understanding its operation. TC2001 BB M 0 TP2150 51 OCS1HP RS CS DB VN10 RB CB 0.1uF + 26 OVER CURRENT DETECTION V5 BBM 1 25 OAOUT1 22 VPP CI + RI RF 50 OCS1HN 57 VBOOT1 48 HO1 47 HO1COM RG INV1 23 + 9 Y1 17 QO C H BR C BAUX R OFB V5 R OFA Offset Trim Circuit AGND C OF CA 2.5V Processing & Modulation VN10 10 Y1B 16 OVER CURRENT DETECTION 44 LO1 45 LO1COM 54 OCS1LP 53 OCS1LN 41,43 C SW RG QO OUTPUT FILTER RL RS VNN VN10 CS B IAS CAP 1 V5 5V M UTE 24 VN10 OCR1 7 VNN 42 V5 VNN VNN 5V 6 5 CS REF 15 R R EF R VNN 1 V NN V NNSENSE 17 AGND R VPP1 VP P VPP SENSE 19 OVER/ UNDER VOLTAGE DETECTION 16 OCR1 OVER CURRENT DETECTION C OCR R OCR V5 R VNN 2 V5 R FBA R FBA R FBC 6 7 5V V5 21 FBKOUT1 FBKGND1 C FB R VPP1 V5 R FBC R FBB R FBB CS AGND 20 F. BEAD 8 H M UTE Analog Ground Power Ground Figure 1: Simplified TK2150 Amplifier TK2150 Basic Amplifier Operation The audio input signal is fed to the processor internal to the TC2001, where a switching pattern is generated. The average idle (no input) switching frequency is approximately 700kHz. With an input signal, the pattern is spread spectrum and varies between approximately 200kHz and 1.5MHz depending on input signal level and frequency. Complementary copies of the switching pattern is output through the Y1 and Y1B pins on the TC2001. These switching patterns are input to the TP2150 where they are level-shifted by the MOSFET drivers and then output to the gates (HO1 and LO1) of external power MOSFETs that are connected as a half bridge. The output of the half bridge is a power-amplified version of the switching pattern that switches between VPP and VNN. This signal is then low-pass filtered to obtain an amplified reproduction of the audio input signal. The TC2001 processor is operated from a 5-volt supply. In the generation of the switching patterns for the output MOSFETs, the processor inserts a “break-before-make” dead time between the turn-off of one transistor and the turn-on of the other in order to minimize shootthrough currents in the external MOSFETs. The dead time can be programmed by setting the break-before-make control bits, BBM1 and BBM0. Feedback information from the output of the half-bridge is supplied to the processor via FBKOUT1. Additional feedback information to account for ground bounce is supplied via FBKGND1. 15 TK2150 – Rev. 1.0/12.02 Tr i path Technol ogy, I nc. - Techni cal Information The MOSFET drivers in the TP2150 are operated from voltages obtained from VN10 and LO1COM for the low-side driver, and VBOOT1 and HO1COM for the high-side driver. VN10 must be a regulated 10V above VNN. N-Channel MOSFETs are used for both the top and bottom of the half bridge. The gate resistors, RG, are used to control MOSFET slew rate and thereby minimize voltage overshoots. Circuit Board Layout The TK2150 is a power (high current) amplifier that operates at relatively high switching frequencies. The output of the amplifier switches between VPP and VNN at high speeds while driving large currents. This high-frequency digital signal is passed through an LC low-pass filter to recover the amplified audio signal. Since the amplifier must drive the inductive LC output filter and speaker loads, the amplifier outputs can be pulled above the supply voltage and below ground by the energy in the output inductance. To avoid subjecting the TK2150 to potentially damaging voltage stress, it is critical to have a good printed circuit board layout. It is recommended that Tripath’s layout and application circuit be used for all applications and only be deviated from after careful analysis of the effects of any changes. Please refer to the TK2150 evaluation board document, RB-TK2150, available on the Tripath website, at www.tripath.com. The trace that connects the source of the top side output MOSFET to the drain of the bottom side output MOSFET is very important. This connection should be as wide as possible and as short as possible. Also a jumper wire of 16 gauge or more can by used in parallel with the trace to reduce any trace resistance or inductance. Any resistance or inductance on this trace can cause the switching output to over/undershoot potentially causing damage to both the TP2150 and the output MOSFETs. The following components are important to place near either their associated TK2150 or output MOSFET pins. The recommendations are ranked in order of layout importance, either for proper device operation or performance considerations. - The capacitors, CHBR, provide high frequency bypassing of the amplifier power supplies and will serve to reduce spikes across the supply rails. Please note that both mosfet half-bridges must be decoupled separately. In addition, the voltage rating for CHBR should be at least 150V as this capacitor is exposed to the full supply range, VPP-VNN. CFB removes very high frequency components from the amplifier feedback signals and lowers the output switching frequency by delaying the feedback signals. In addition, the value of CFB is different for channel 1 and channel 2 to keep the average switching frequency difference greater than 40kHz. This minimizes in-band audio noise. Locate these capacitors as close to their respective TC2001 pin as possible. DD and DS should be placed as close to the drain and source of the output MOSFETs as possible. DD should be connected directly from the drain of the top side MOSFET to the drain of the bottom side MOSFET. DS should be connected directly from the source of the top side MOSFET to the source of the bottom side MOSFET. DD protects the bottom side output MOSFET from output over/undershoots. DS protects the top side output MOSFET from output over/undershoots. The over/undershoots are very high speed transients, if DD and DS are placed too far away from the MOSFETs they will be ineffective. To minimize noise pickup and minimize THD+N, RFBC should be located as close to the TC2001 as possible. Make sure that the routing of the high voltage feedback lines is kept far away from the input op amps or significant noise coupling may occur. It is best to shield the high voltage feedback lines by using a ground plane around these traces as well as the input section. The feedback and feedback ground traces should be routed together in parallel. CB, CSW provides high frequency bypassing for the VN10 and bootstrap supplies. Very high currents are present on these supplies. - - - - 16 TK2150 – Rev. 1.0/12.02 Tr i path Technol ogy, I nc. - Techni cal Information In general, to enable placement as close to the TK2150, and minimize PCB parasitics, the capacitors CFB, CB and CSW should be surface mount types, located on the “solder” side of the board. Some components are not sensitive to location but are very sensitive to layout and trace routing. - To maximize the damping factor and reduce distortion and noise, the modulator feedback connections should be routed directly to the pins of the output inductors. LO. The output filter capacitor, CO, and zobel capacitor, CZ, should be star connected with the load return. The output ground feedback signal should be taken from this star point. The modulator feedback resistors, RFBA and RFBB, should all be grounded and attached to 5V together. These connections will serve to minimize common mode noise via the differential feedback. The feedback signals that come directly from the output inductors are high voltage and high frequency in nature. If they are routed close to the input nodes, IN1 and IN2, the high impedance inverting opamp pins will pick up noise. This coupling will result in significant background noise, especially when the input is AC coupled to ground, or an external source such as a CD player or signal generator is connected. Thus, care should be taken such that the feedback lines are not routed near any of the input section. To minimize the possibility of any noise pickup, the trace lengths of IN1 and IN2 should be kept as short as possible. This is most easily accomplished by locating the input resistors, RI and the input stage feedback resistors, RF as close to the TC2001 as possible. In addition, the offset trim resistor, ROFB, which connects to either IN1, or IN2, should be located close to the TC2001 input section. - - TK2150 Grounding Proper grounding techniques are required to maximize TK2150 functionality and performance. Parametric parameters such as THD+N, Noise Floor and Crosstalk can be adversely affected if proper grounding techniques are not implemented on the PCB layout. The following discussion highlights some recommendations about grounding both with respect to the TK2150 as well as general “audio system” design rules. The TK2150 is divided into three sections: the input section, which is the TC2001, the MOSFET driver section, which is the TP2150, and the output (high voltage) section, which is the output MOSFETs. On the TK2150 evaluation board, the ground is also divided into distinct sections, Analog Ground (AGND) and Power Ground (PGND). To minimize ground loops and keep the audio noise floor as low as possible, the two grounds must be only connected at a single point. Depending on the system design, the single point connection may be in the form of a ferrite bead or a PCB trace. The analog ground, must be connected to pin 20 on the TC2001 and pins 2 and 5 on the TP2150. The ground for the V5 power supply should connect directly to pin 20 of the TC2001. Additionally, any external input circuitry such as preamps, or active filters, should be referenced to pin 20 on the TC2001. Special care must be used when connecting the NC pins of the TP2150 in order to achieve the best noise performance. Pins 1, 3, 4, 8, 11, 12, 18, 19, 20, 22, 23, 24, 25, 61, 62, 63, 64 should be tied to Analog Ground. All of the other NC pins of the TP2150 should be left floating. For the power section, Tripath has traditionally used a “star” grounding scheme. Thus, the load ground returns and the power supply decoupling traces are routed separately back to the power supply. In addition, any type of shield or chassis connection would be connected directly to the ground star located at the power supply. These precautions will both minimize audible noise and enhance the crosstalk performance of the TK2150. 17 TK2150 – Rev. 1.0/12.02 Tr i path Technol ogy, I nc. - Techni cal Information The TC2001 incorporates a differential feedback system to minimize the effects of ground bounce and cancel out common mode ground noise. As such, the feedback from the output ground for each channel needs to be properly sensed. This can be accomplished by connecting the output ground “sensing” trace directly to the star formed by the output ground return, output capacitor, CO, and the zobel capacitor, CZ. Refer to the Application / Test Circuit for a schematic description. TK2150 Amplifier Gain The gain of the TK2150 is the product of the input stage gain and the modulator gain for the TC2001. Please refer to the sections, Input Stage Design, and Modulator Feedback Design, for a complete explanation of how to determine the external component values. A VTK2150 = A VINPUTSTAG E * A V MODULATOR A VTK2150 ≈ − R F  R FBC * (R FBA + R FBB )  + 1  RI  R FBA * R FBB  For example, using a TC2001 with the following external components, RI = 20kΩ RF = 30.1kΩ RFBA = 1kΩ RFBB = 1.1kΩ RFBC = 10.0kΩ A VTK2150 ≈ − 20k Ω  10.0k Ω * (1.0k Ω + 1.1k Ω ) V  + 1 = - 13.35  30.1k Ω  1.0k Ω * 1.1k Ω V  Input Stage Design The TC2001 input stage is configured as an inverting amplifier, allowing the system designer flexibility in setting the input stage gain and frequency response. Figure 2 shows a typical application where the input stage is a constant gain inverting amplifier. The input stage gain should be set so that the maximum input signal level will drive the input stage output to 4Vpp. The gain of the input stage, above the low frequency high pass filter point, is that of a simple inverting amplifier: A VINPUTSTAG E =− RF RI 18 TK2150 – Rev. 1.0/12.02 Tr i path Technol ogy, I nc. - Techni cal Information TC2001 O AOUT1 22 CI + RI RF INV1 23 V5 INPUT1 + AGND BIASCAP V5 CI + RI INV2 28 + AGND INPUT2 RF O AOUT2 27 Figure 2: TC2001 Input Stage Input Capacitor Selection CIN can be calculated once a value for RIN has been determined. CIN and RIN determine the input low-frequency pole. Typically this pole is set at 10Hz. CIN is calculated according to: CIN = 1 / (2π x FP x RIN) where: RIN = Input resistor value in ohms FP = Input low frequency pole (typically 10Hz) Modulator Feedback Design The modulator converts the signal from the input stage to the high-voltage output signal. The optimum gain of the modulator is determined from the maximum allowable feedback level for the modulator and maximum supply voltages for the power stage. Depending on the maximum supply voltage, the feedback ratio will need to be adjusted to maximize performance. The values of RFBA, RFBB and RFBC (see explanation below) define the gain of the modulator. Once these values are chosen, based on the maximum supply voltage, the gain of the modulator will be fixed even with as the supply voltage fluctuates due to current draw. For the best signal-to-noise ratio and lowest distortion, the maximum modulator feedback voltage should be approximately 4Vpp. The modulator feedback resistor RFBC should be adjusted so that the modulator feedback voltage is approximately 4Vpp. This will keep the gain of the modulator as low as possible and still allow headroom so that the feedback signal does not clip the modulator feedback stage. Increasing the value of RFBC will increase the modulator gain. Sometimes increasing the value of RFBC may be necessary to achieve full power for the amplifier since the input stage for the TC2001 will clip at approximately 4Vpp. This will ensure that the input stage doesn’t clip before the output stage. Figure 3 shows how the feedback from the output of the amplifier is returned to the input of the modulator. The input to the modulator (FBKOUT1/FBKGND1 for channel 1) can be viewed as inputs to an inverting differential amplifier. RFBA and RFBB bias the feedback signal to approximately 2.5V and RFBC scales the large OUT1/OUT2 signal to down to 4Vpp. 19 TK2150 – Rev. 1.0/12.02 Tr i path Technol ogy, I nc. - Techni cal Information 1/2 TC2001 V5 R FBA R FBA R FBC OUT1 OUT1 GROUND R FBC Processing & Modulation FBKOUT1 28 F BKGND1 27 R FBB R FBB AGND Figure 3: Modulator Feedback The modulator feedback resistors are: R FBA = User specified, typically 1K Ω R FBA * VPP R FBB = (VPP - 4) R FBA * VPP R FBC = 4 R FBC * (R FBA + R FBB ) A V - MODULATOR ≈ +1 R FBA * R FBB The above equations assume that VPP=|VNN|. For example, in a system with VPPMAX=40V and VNNMAX=-40V, RFBA = 1kΩ, 1% RFBB = 1.097kΩ, use 1.1kΩ, 1% RFBC = 10.0kΩ, use 10.0kΩ, 1% The resultant modulator gain is: AV - MODULATOR ≈ 10.0k Ω * (1.0k Ω + 1.1k Ω ) + 1 = 20.09V/V 1.0k Ω * 1.1k Ω Mute When a logic high signal is supplied to MUTE, both amplifier channels are muted (both high- and low-side transistors are turned off). When a logic level low is supplied to MUTE, both amplifiers 20 TK2150 – Rev. 1.0/12.02 Tr i path Technol ogy, I nc. - Techni cal Information are fully operational. There is a delay of approximately 200 milliseconds between the deassertion of MUTE and the un-muting of the TK2150. Sleep When a logic high signal is supplied to SLEEP, the two channels on the TP2150 will be shutdown and the outputs will be muted. When a logic level low is supplied to SLEEP, both channels are fully operational. Turn-on & Turn-off Noise If turn-on or turn-off noise is present in a TK2150 amplifier, the cause is frequently due to other circuitry external to the TK2150. While the TK2150 has circuitry to suppress turn-on and turn-off transients, the combination of the power supply and other audio circuitry with the TK2150 in a particular application may exhibit audible transients. One solution that will completely eliminate turn-on and turn-off pops and clicks is to use a relay to connect/disconnect the amplifier from the speakers with the appropriate timing at power on/off. The relay can also be used to protect the speakers from a component failure (e.g. shorted output MOSFET), which is a protection mechanism that some amplifiers have. Circuitry external to the TK2150 would need to be implemented to detect these failures. DC Offset While the DC offset voltages that appear at the speaker terminals of a TK2150 amplifier are typically small, Tripath recommends that any offsets during operation be nulled out of the amplifier with a circuit like the one shown connected to IN1 and IN2 in the Test/Application Circuit. It should be noted that the DC voltage on the output of a TK2150 amplifier with no load in mute will not be zero. This offset does not need to be nulled. The output impedance of the amplifier in mute mode is approximately 10KΩ. This means that the DC voltage drops to essentially zero when a typical load is connected. HMUTE The HMUTE pin on the TC2001 is a 5V logic output that indicates various fault conditions within the device. These conditions include: over-current, overvoltage and undervoltage. The HMUTE output is capable of directly driving an LED through a series 2kΩ resistor. Over-current Protection The TK2150 has over-current protection circuitry to protect itself and the output transistors from short-circuit conditions. The TK2150 uses the voltage across a resistor RS (measured via OCS1HP, OCS1HN, OCS1LP and OCS1LN of the TP2150) that is in series with each output MOSFET to detect an over-current condition. RS and ROCR are used to set the over-current threshold. The OCS pins must be Kelvin connected for proper operation. See “Circuit Board Layout” in Application Information for details. When the voltage across ROCR becomes greater than VTOC (approximately 1.0V) the TC2001 will shut off the output stages of its amplifiers. The occurrence of an over-current condition is latched in the TK2150 and can be cleared by toggling the MUTE input or cycling power. Setting Over-current Threshold RS and ROCR determine the value of the over-current threshold, ISC: ISC = 3580 x (VTOC – IBIAS * ROCR)/(R OCR * RS) ROCR = (3580 x VTOC)/(ISC * RS+3580 * IBIAS) where: 21 TK2150 – Rev. 1.0/12.02 Tr i path Technol ogy, I nc. - Techni cal Information RS and ROCR are in Ω VTOC = Over-current sense threshold voltage (See Electrical Characteristics Table) = 1.0V typically IBIAS = 20uA For example, to set an ISC of 7A, ROCR = 30.1kΩ and RS will be 10mΩ. As high-wattage resistors are usually only available in a few low-resistance values (10mΩ, 25mΩ and 50mΩ), ROCR can be used to adjust for a particular over-current threshold using one of these values for RS. It should be noted that the addition of the bulk CHBR capacitor shown in the Application / Test Diagram will increase the ISC level. Thus, it will be larger than the theoretical value shown above. Once the designer has settled on a layout and specific CHBR value, the system ISC trip point can be adjusted by increasing the ROCR value. The ROCR should be increased to a level that allows expected range of loads to be driven well into clipping without current limiting while still protecting the output MOSFETs in case of a short circuit condition. Auto Recovery Circuit for Overcurrent Fault Condition If an overcurrent fault condition occurs the HMUTE pin (pin 8 of the TC2001) will be latched high and the amplifier will be muted. The amplifier will remain muted until the MUTE pin (pin 24 of the TC2001) is toggled high and then low or the power supplies are turned off and then on again. The circuit shown below in Figure 4 is a circuit that will detect if HMUTE is high and then toggle the mute pin high and then low, thus resetting the amplifier. The LED, D1 will turn on when HMUTE is high. The reset time has been set for approximately 2.5 seconds. The duration of the reset time is controlled by the RC time constant set by R306 and C311. To increase the reset, time increase the value of C311. To reduce the reset time, reduce the value of C311. Please note that this circuit is optional and is not included on the RB-TK2150 evaluation boards. V5 D1 R 311 LED 1k Ω , 5% R311 1k Ω , 5% R306 510k Ω , 5% R307 10k Ω , 5% R308 10k Ω , 5% R309 1k Ω , 5% Q305 2N3906 MUTE Pin 24 HMUTE Pin 8 R311 1k Ω , 5% C311 10uF, NP Q302 2N3904 Q303 2N7002 Q304 2N3904 R310 1k Ω , 5% Jumper remove jumper to enable mute AGND Figure 4: Overcurrent Autorecovery Circuit Over- and Under-Voltage Protection The TC2001 senses the power rails through external resistor networks connected to VNNSENSE and VPPSENSE. The over- and under-voltage limits are determined by the values of the resistors in the networks, as described in the table “Test/Application Circuit Component Values”. If the supply voltage falls outside the upper and lower limits determined by the resistor networks, the TC2001 shuts off the output stages of the amplifiers. The removal of the over-voltage or undervoltage condition returns the TK2150 to normal operation. Please note that trip points specified in the Electrical Characteristics table are at 25°C and may change over temperature. The TC2001 has built-in over and under voltage protection for both the VPP and VNN supply rails. The nominal operating voltage will typically be chosen as the supply “center point.” This allows the supply voltage to fluctuate, both above and below, the nominal supply voltage. 22 TK2150 – Rev. 1.0/12.02 Tr i path Technol ogy, I nc. - Techni cal Information VPPSENSE (pin 19) performs the over and undervoltage sensing for the positive supply, VPP. VNNSENSE (pin 17) performs the same function for the negative rail, VNN. When the current through RVPPSENSE (or RVNNSENSE) goes below or above the values shown in the Electrical Characteristics section (caused by changing the power supply voltage), the TK2150 will be muted. VPPSENSE is internally biased at 2.5V and VNNSENSE is biased at 1.25V. Once the supply comes back into the supply voltage operating range (as defined by the supply sense resistors), the TK2150 will automatically be unmuted and will begin to amplify. There is a hysteresis range on both the VPPSENSE and VNNSENSE pins. If the amplifier is powered up in the hysteresis band the TK2150 will be muted. Thus, the usable supply range is the difference between the over-voltage turn-off and under-voltage turn-off for both the VPP and VNN supplies. It should be noted that there is a timer of approximately 200mS with respect to the over and under voltage sensing circuit. Thus, the supply voltage must be outside of the user defined supply range for greater than 200mS for the TK2150 to be muted. Figure 5 shows the proper connection for the Over / Under voltage sense circuit for both the VPPSENSE and VNNSENSE pins. V5 VNN TC2001 R VNN2 R VNN1 17 VNNSENSE V5 VPP R VPP1 R VPP1 19 VPPSENSE Figure 5: Over / Under voltage sense circuit The equation for calculating RVPP1 is as follows: R VPP1 = VPP I VPPSENSE Set R VPP2 = R VPP1 . The equation for calculating RVNNSENSE is as follows: R VNN1 = VNN I VNNSENSE Set R VNN2 = 3 × R VNN1 . IVPPSENSE or IVNNSENSE can be any of the currents shown in the Electrical Characteristics table for VPPSENSE and VNNSENSE, respectively. The two resistors, RVPP2 and RVNN2 compensate for the internal bias points. Thus, RVPP1 and RVNN1 can be used for the direct calculation of the actual VPP and VNN trip voltages without considering the effect of RVPP2 and RVNN2. 23 TK2150 – Rev. 1.0/12.02 Tr i path Technol ogy, I nc. - Techni cal Information Using the resistor values from above, the actual minimum over voltage turn off points will be: VPP MIN_OV_TUR VNN MIN_OV_TUR N_OFF = R VPP1 × I VPPSENSE (MIN_OV_TU RN_OFF) N_OFF = − ( R VNN1 × I VNNSENSE (MIN_OV_TU RN_OFF) ) The other three trip points can be calculated using the same formula but inserting the appropriate IVPPSENSE (or IVNNSENSE) current value. As stated earlier, the usable supply range is the difference between the minimum overvoltage turn off and maximum under voltage turn-off for both the VPP and VNN supplies. VPP RANGE = VPP MIN_OV_TUR N_OFF - VPP MAX_UV_TUR N_OFF VNN RANGE = VNN MIN_OV_TUR N_OFF - VNN MAX_UV_TUR N_OFF VN10 Supply and Switch Mode Power Supply Controller VN10 is an additional supply voltage required by the TP2150. VN10 must be 10 volts more positive than the nominal VNN. VN10 must track VNN. Generating the VN10 supply requires some care. The proper way to generate the voltage for VN10 is to use a 10V-postive supply voltage referenced to the VNN supply. The TP2150 has an internal switch mode power supply controller which generates the necessary floating power supply for the MOSFET driver stage in the TP2150 (nominally 10V with the external components shown in Application / Test Circuit). The SMPSO pin (pin 60) provides a switching output waveform to drive the gate of a P channel MOSFET. The source of the P channel MOSFET should be tied to power ground and the drain of the MOSFET should be tied to the VN10 through a 100uH inductor. The performance curves shown in this datasheet as well as the efficiency measurements were done using the internal VN10 generator. Tripath recommends using the internal VN10 generator to power the TP2150. Figure 6 shows how the VN10 generator should be connected. TP2150 59 SW -FB VN10 Switchmode Power Supply C SW FB 0.1uF R SW FB 1 k Ω 60 SM PSO VNN R PG 1 0 Ω QP L SW 100uH VN10 D SW B1100DICT C SW 0.1uF + C SW 100uF VNN Figure 6: VN10 Generator In some cases, though, a designer may wish to use an external VN10 generator. The specification for VN10 quiescent current (200mA typical, 250mA maximum) in the Electrical Characteristics section states the amount of current needed when an external floating supply is used. If the internal VN10 generator is not used, Tripath recommends shorting SMPSO(pin 60) to VNN(pin 42) and SW-FB(pin 59) to VNN(pin 42). One apparent method to generate the VN10 supply voltage is to use a negative IC regulator to drop PGND down to 10V (relative to VNN). This method will not work since negative regulators 24 TK2150 – Rev. 1.0/12.02 Tr i path Technol ogy, I nc. - Techni cal Information only sink current into the regulator output and will not be capable of sourcing the current required by VN10. Furthermore, problems can arise since VN10 will not track movements in VNN. The external VN10 supply must be able to source a maximum of 250mA into the VN10 pin. Thus, a positive supply must be used and must be referenced to the VNN rail. If the external VN10 supply does not track fluctuations in the VNN supply or is not able to source current into the VN10 pin, the TP2150 will not work and can also become permanently damaged. Figure 7 shows the correct way to power the TP2150: VPP V5 5V PGND VNN 10V VNN F. BEAD AGND VN10 VPP Figure 7: Proper Power Supply Connection Output Transistor Selection The key parameters to consider when selecting what MOSFET to use with the TK2150 are drainsource breakdown voltage (BVdss), gate charge (Qg), and on-resistance (RDS(ON)). The BVdss rating of the MOSFET needs to be selected to accommodate the voltage swing between VSPOS and VSNEG as well as any voltage peaks caused by voltage ringing due to switching transients. With a ‘good’ circuit board layout, a BVdss that is 50% higher than the VPP and VNN voltage swing is a reasonable starting point. The BVdss rating should be verified by measuring the actual voltages experienced by the MOSFET in the final circuit. Ideally a low Qg (total gate charge) and low RDS(ON) are desired for the best amplifier performance. Unfortunately, these are conflicting requirements since RDS(ON) is inversely proportional to Qg for a typical MOSFET. The design trade-off is one of cost versus performance. A lower RDS(ON) means lower I2RDS(ON) losses but the associated higher Qg translates into higher switching losses (losses = Qg x 10 x 1.2MHz). A lower RDS(ON) also means a larger silicon die and higher cost. A higher RDS(ON) means lower cost and lower switching losses but higher I2RDSON losses. Gate Resistor Selection The gate resistors, RG, are used to control MOSFET switching rise/fall times and thereby minimize voltage overshoots. They also dissipate a portion of the power resulting from moving the gate charge each time the MOSFET is switched. If RG is too small, excessive heat can be generated in the driver. Large gate resistors lead to slower MOSFET switching, which requires a larger break-before-make (BBM) delay. Break-Before-Make (BBM) Timing Control 25 TK2150 – Rev. 1.0/12.02 Tr i path Technol ogy, I nc. - Techni cal Information The half-bridge power MOSFETs require a deadtime between when one transistor is turned off and the other is turned on (break-before-make) in order to minimize shoot through currents. The TC2001 has BBM0 and BBM1 that are logic inputs (connected to logic high or pulled down to logic low) that control the break-before-make timing of the output transistors according to the following table. BBM1 0 0 1 1 BBM0 0 1 0 1 Delay 120 ns 80 ns 40 ns 0 ns Table 1: BBM Delay The tradeoff involved in making this setting is that as the delay is reduced, distortion levels improve but shoot-through and power dissipation increase. All typical curves and performance information were done with using the 40ns BBM setting. The actual amount of BBM required is dependent upon other component values and circuit board layout, the value selected should be verified in the actual application circuit/board. It should also be verified under maximum temperature and power conditions since shoot-through in the output MOSFETs can increase under these conditions, possibly requiring a higher BBM setting than at room temperature. Recommended MOSFETs The following devices are capable of achieving full performance, both in terms of distortion and efficiency, for the specified load impedance and voltage range. Device Information – Recommended MOSFETs Part Number IRF520N FQP13N10 STP14NF10 IRF530N BUK7575-100A STP24NF10 Manufacturer International Rectifier Fairchild Semiconductor ST Microelectronics International Rectifier Philips Semiconductor ST Microelectronics BVDSS (V) 100 100 100 100 100 100 ID (A) 9.7 12.8 14 17 23 26 Qg (nC) 25(max.) 12 15.5 37(max.) 25 30 RDS(on) (Ω) 0.20 (max.) 0.142 0.16 0.09 (max.) 0.064 0.055 PD (W) 48 65 60 70 99 85 Package TO220 TO220 TO220 TO220 TO220 TO220 Note: The devices are listed in ascending current capability not in order of recommendation. The following information represents qualitative data from system development using the TK2150 and the associated MOSFETs. Recommendations such as maximum supply voltages and gate resistor values are dependent on the PCB layout and component location. The gate resistor values were chosen to achieve about 18-80mA of idle current from the VPP supply. This value of supply current is a good compromise between low power efficiency and high frequency THD+N performance. As shown in Table 2 below, increasing the gate resistor value will improve high frequency THD+N performance at the expense of idle current draw. The BBM setting was 40nS in all cases. It should be understood that different MOSFETs will have different characteristics and will require some adjustment to the gate resistor to achieve the same idle current. 26 TK2150 – Rev. 1.0/12.02 Tr i path Technol ogy, I nc. - Techni cal Information 10 5 2 1 0.5 0.2 % 0.1 0.05 0.02 0.01 0.005 0.002 T HD+N versus Frequency versus G ate Resistance R L = 6Ω P out = 25W /Channel FE T's = FQP13N10 f = 1k Hz BB M = 40nS V S = + 40V BW = 22Hz - 22k Hz R G = 22 Ω RG = 3 3 Ω R G = 4 6.4 Ω % R L = 8Ω P out = 20W /Channel 2 FE T's = FQP 13N10 f = 1kHz 1 B B M = 40nS 0.5 V S = + 40V B W = 22Hz - 22kHz 0.2 5 0.1 0.05 0.02 0.01 0.005 0.002 10 THD+N versus Frequency versus Gate R esistance RG = 2 2 Ω RG = 3 3 Ω R G = 4 6.4 Ω 0.001 20 50 100 200 500 Hz 1k 2k 5k 10k 20k 0.001 20 50 100 200 500 Hz 1k 2k 5k 10k 20k 6 ohm and 8 ohm plots of THD+N versus Frequency for various gate resistor values 6 ohms 18mA 20mA 80mA 8 ohms 18mA 20mA 80mA 22 ohms 33 ohms 46.4 ohms Table 2: Idle current draw for VPP with various gate resistor values Application Information – Recommended MOSFETs Part Number IRF520N FQP13N10 STP14NF10 IRF530N BUK7575-100A STP24NF10 Recommended Max Supply Voltage +/-45V +/-45V +/-45V +/-45V +/-45V +/-45V Typical Load at Maximum Supply 8 ohm SE 6 ohm SE 6 ohm SE 4 ohm SE / 8 ohm BR 4 ohm SE / 6 ohm BR 4 ohm SE / 6 ohm BR Recommended Gate Resistor 22 ohms 33 ohms 33 ohms 15 ohms 15 ohms 10 ohms Other applications Only for 8 ohm SE Loads 6 ohm BR at +/25V 8 ohm BR at +/-33V 6 ohm BR at +/-25V 8 ohm BR at +/-33V 6 ohm BR at +/-33V 4 ohm BR at +/-33V 4 ohm BR at +/-35V SE stands for Single Ended Outputs and BR stands for Bridged Output MOSFETs Under Evaluation The following MOSFETs appear to be suitable for use with the TK2150, and we are waiting for samples to evaluate. Most of these devices come from the same “family” or generation, as other recommended MOSFETs. However, experience tells us that we cannot recommend any devices until we have received samples and fully tested them. Device Information – MOSFETs Under Evaluation Part Number FQP14N15 FQP16N15 FDP2572 FDP3682 Manufacturer Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor BVDSS (V) 150 150 150 100 ID (A) 14.4 16.4 29 32 Qg (nC) 18 23 27 18.5 RDS(on) (Ω) .164 0.123 0.045 0.032 PD (W) 104 108 135 95 Package T0220 TO220 TO247 TO220 Note: The devices are listed in ascending current capability not in order of recommendation. Output Filter Design One advantage of Tripath amplifiers over PWM solutions is the ability to use higher-cutofffrequency filters. This means load-dependent peaking/droop in the 20kHz audio band potentially caused by the filter can be made negligible. This is especially important for applications where the user may select a 6-Ohm or 8-Ohm speaker. Furthermore, speakers are not purely resistive 27 TK2150 – Rev. 1.0/12.02 Tr i path Technol ogy, I nc. - Techni cal Information loads and the impedance they present changes over frequency and from speaker model to speaker model. Tripath recommends designing the filter as a 2nd order, 100kHz LC filter. Tripath has obtained good results with LF = 18uH and CF = 0.15uF. The core material of the output filter inductor has an effect on the distortion levels produced by a TK2150 amplifier. Tripath recommends low-mu type-2 iron powder cores because of their low loss and high linearity (available from Micrometals, www.micrometals.com). The specific core used on the EB-TK2150 was a T106-2 wound with 44 turns of 22AWG wire. Tripath also recommends that an RC damper be used after the LC low-pass filter. No-load operation of a TK2150 amplifier can create significant peaking in the LC filter, which produces strong resonant currents that can overheat the output MOSFETs and/or other components. The RC dampens the peaking and prevents problems. Tripath has obtained good results with RZ = 20Ω and CZ = 0.15uF. Bridging the TK2150 The TK2150 can be bridged by returning the signal from VP1 to the input resistor at INV2. OUT1 will then be a gained version of VP1, and OUT2 will be a gained and inverted version of OAOUT1 (see Figure 8). When the two amplifier outputs are bridged, the apparent load impedance seen by each output is halved, so the current capability of the output MOSFETs, as well their power dissipation capability, must be accounted for in the design. In addition, the higher peak currents caused by driving lower impedance loads will cause additional ringing on the outputs. Thus, the layout and supply decoupling for low impedance (below 8 ohms) bridged applications must be extremely good to minimize output ringing and to ensure proper amplifier performance. TC2001 O AO UT1 22 V5 CI + RI RF INV1 23 INPUT1 + AGND BIASCAP V5 20k INV2 28 + AGND 20k O AOUT2 27 Figure 8: Input Stage Setup for Bridging 28 TK2150 – Rev. 1.0/12.02 Tr i path Technol ogy, I nc. - Techni cal Information The switching outputs, OUT1 and OUT2, are not synchronized, so a common inductor may not be used with a bridged TK2150. For this same reason, individual zobel networks must be applied to each output to load each output and lower the Q of each common mode differential LC filter. Low-frequency Power Supply Pumping A potentially troublesome phenomenon in single-ended switching amplifiers is power supply pumping. This phenomenon is caused by current from the output filter inductor flowing into the power supply output filter capacitors in the opposite direction as a DC load would drain current from them. Under certain conditions (usually low-frequency input signals), this current can cause the supply voltage to “pump” (increase in magnitude) and eventually cause over-voltage/undervoltage shut down. Moreover, since over/under-voltage are not “latched” shutdowns, the effect would be an amplifier that oscillates between on and off states. If a DC offset on the order of 0.3V is allowed to develop on the output of the amplifier (see “DC Offset Adjust”), the supplies can be boosted to the point where the amplifier’s over-voltage protection triggers. One solution to the pumping issue it to use large power supply capacitors to absorb the pumped supply current without significant voltage boost. The low-frequency pole used at the input to the amplifier determines the value of the capacitor required. This works for AC signals only. A no-cost solution to the pumping problem uses the fact that music has low frequency information that is correlated in both channels (it is in phase). This information can be used to eliminate boost by putting the two channels of a TK2150 amplifier out of phase with each other. This works because each channel is pumping out of phase with the other, and the net effect is a cancellation of pumping currents in the power supply. The phase of the audio signals needs to be corrected by connecting one of the speakers in the opposite polarity as the other channel. Theoretical Efficiency Of A TK2150 Amplifier The efficiency, η, of an amplifier is: η = POUT/PIN The power dissipation of a TK2150 amplifier is primarily determined by the on resistance, RON, of the output transistors used, and the switching losses of these transistors, PSW. For a TK2150 amplifier, PIN (per channel) is approximated by: PIN = PDRIVER + PSW + POUT ((RS + RON + RCOIL + RL)/RL)2 where: PDRIVER = Power dissipated in the TP2150 = 1.0W/channel PSW = 2 x (0.01) x Qg (Qg is the gate charge of MOSFET, in nano-coulombs) RCOIL = Resistance of the output filter inductor (typically around 50mΩ) For a 125W RMS per channel, 8Ω load amplifier using FQP13N10 MOSFETs, and an RS of 50mΩ, PIN = PDRIVER + PSW + POUT ((RS + RON + RCOIL + RL)/RL)2 = .8 + 2 x (0.01) x (12) + 125 x ((0.05 + 0.2414 + 0.05 + 8)/8)2 = 0.8 + 0.24 + 135.9 = 136.94W In the above calculation the RDS (ON) of 0.065Ω was multiplied by a factor of 1.7 to obtain RON in order to account for some temperature rise of the MOSFETs. (RDS (ON) typically increases by a factor of 1.7 for a typical MOSFET as temperature increases from 25ºC to 170ºC.) So, η = POUT/PIN = 125/136.94 = 91% Performance Measurements of a TK2150 Amplifier Tripath amplifiers operate by modulating the input signal with a high-frequency switching pattern. This signal is sent through a low-pass filter (external to the TK2150) that demodulates it to recover an amplified version of the audio input. The frequency of the switching pattern is spread 29 TK2150 – Rev. 1.0/12.02 Tr i path Technol ogy, I nc. - Techni cal Information spectrum and typically varies between 200kHz and 1.5MHz, which is well above the 20Hz – 22kHz audio band. The pattern itself does not alter or distort the audio input signal but it does introduce some inaudible noise components. The measurements of certain performance parameters, particularly those that have anything to do with noise, like THD+N, are significantly affected by the design of the low-pass filter used on the output of the TK2150 and also the bandwidth setting of the measurement instrument used. Unless the filter has a very sharp roll-off just past the audio band or the bandwidth of the measurement instrument ends there, some of the inaudible noise components introduced by the Tripath amplifier switching pattern will get integrated into the measurement, degrading it. Tripath amplifiers do not require large multi-pole filters to achieve excellent performance in listening tests, usually a more critical factor than performance measurements. Though using a multi-pole filter may remove high-frequency noise and improve THD+N type measurements (when they are made with wide-bandwidth measuring equipment), these same filters can increase distortion due to inductor non-linearity. Multi-pole filters require relatively large inductors, and inductor non-linearity increases with inductor value. 30 TK2150 – Rev. 1.0/12.02 Tr i path Technol ogy, I nc. - Techni cal Information TC2001 Package Information 28-pin SOIC 31 TK2150 – Rev. 1.0/12.02 Tr i path Technol ogy, I nc. - Techni cal Information TP2150 Package Information 64-pin LQFP 32 TK2150 – Rev. 1.0/12.02 Tr i path Technol ogy, I nc. - Techni cal Information TP2150 Package Information 64-pin LQFP 33 TK2150 – Rev. 1.0/12.02 Tr i path Technol ogy, I nc. - Techni cal Information PRELIMINARY – This product is still in development. Tripath Technology Inc. reserves the right to make any changes without further notice to improve reliability, function or design. This data sheet contains the design specifications for a product in development. Specifications may change in any manner without notice. Tripath and Digital Power Processing are trademarks of Tripath Technology Inc. Other trademarks referenced in this document are owned by their respective companies. Tripath Technology Inc. reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Tripath does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. TRIPATH’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN CONSENT OF THE PRESIDENT OF TRIPATH TECHNOLOGY INC. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in this labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Contact Information TRIPATH TECHNOLOGY, INC 2560 Orchard Parkway, San Jose, CA 95131 408.750.3000 - P 408.750.3001 - F For more Sales Information, please visit us @ www.tripath.com/cont_s.htm For more Technical Information, please visit us @ www.tripath.com/data.htm 34 TK2150 – Rev. 1.0/12.02