TP2150B

Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on T P2150B D UAL HIGH SIDE AND LOW SIDE MOSFET DRIVER Technical Information Revision 1.7 – June 2004 G ENERAL DESCRIPTION The TP2150B is a high speed, dual high side and low side MOSFET driver. The TP2150B level shifts CMOS or TTL input levels to gate signals for driving high voltage and high current MOSFETs in a dual half bridge or single full bridge configuration. The built in bootstrap circuitry allows for the high side to drive an N-channel power MOSFET. A pplications Switch mode audio power amplifier Switch mode power supply MOSFET driver F eatures Pin Compatible with Tripath TP2350B Supports wide range of power supplies Built in switching regulator driver to power the gate drive circuitry (VN10) Over-current protection Over-temperature protection B enefits Reduced system cost with smaller/less expensive power supply and heat sink Signal fidelity equal to high quality Class-AB amplifiers when paired with Tripath TC2001 Floating reference high side driver allows for N channel output power MOSFETs on the high side. 1 TP2150B - MC/ 1.7/06.04 Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on B LOCK DIAGRAM V5 VN10 Under Voltage V5 YX YXB AG ND Level Shift Down YX HO X F AULT THERMAL SHUTDOW N VBOO TX AGND CSS Level Shift Up VNN HO XCOM VN10 SMPSO -10V SW -FB +10V LOXCO M VNN OCSXHP High Side Overcurrent Sense V5 IH + IL IH YXB LOX 3.6K Ω O CSXHN O CDX Σ AGND AG ND Low Side Overcurrent Sense IL 3.6K Ω O CSXLP OCSXLN 2 TP2150B - MC/ 1.7/06.04 Tr i path Technol ogy, I nc. - Techni cal Information Absolute Maximum Ratings TP2150B (Note 3) SYMBOL VPP, VNN VN10 V5 TSTORE TA TJ ESDHB ESDMM VLOGIC VOCSH VOCSL VBOOT Supply Voltage Voltage for FET drive 5V power supply Storage Temperature Range Operating Free-air Temperature Range (Note 4) Junction Temperature ESD Susceptibility – Human Body Model (Note 5) All pins ESD Susceptibility – Machine Model (Note 6) All pins Voltage input on logic pins (pins 9,13,14,16,17) Voltage input on MOSFET high side overcurrent detect pins (pins 33,34,50,51) Voltage input on MOSFET low side overcurrent detect pins (pins 30,31,53,54) Voltage input on VBOOT1 and VBOOT2 pins (pins 27,57) PARAMETER Value +/- 65 VNN+13 6 -55º to 150º -40º to 85º 150º 2000 200 -0.3 to (V5+0.3) VPP VNN VPP+12 UNITS V V V C C C V V V V V V Note 3: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. See the table below for Operating Conditions. Note 4: This is a target specification. Characterization is still needed to validate this temperature range. Note 5: Human body model, 100pF discharged through a 1.5KΩ resistor. Note 6: Machine model, 220pF – 240pF discharged through all pins. Thermal Characteristics TP2150B SYMBOL θJA PARAMETER Junction-to-air Thermal Resistance Value 35° UNITS C/W 3 TP2150B - MC/ 1.7/06.04 Tr i path Technol ogy, I nc. - Techni cal Information Electrical Characteristics TP2150B (Note 7) TA = 25 °C. Unless otherwise noted, the supply voltage is VPP=|VNN|=45V. SYMBOL Iq PARAMETER Quiescent Current (No load, BBM0=1,BBM1=0, Mute = 0V) CONDITIONS VPP = +45V VNN = -45V (using external VN10) VNN = -45V (using SMPSO pin to drive IRFL9110 for generating VN10) VN10 = 10V V5 = 5V V5-1 1 50 53 2 200 35 VIN = 0.5V between OCSXXX pins (i.e. pins 51 and 50, pins 53 and 54, pins 33 and 34, pins 30 and 31) VIN = 0V between OCSXXX pins (i.e. pins 51 and 50, pins 53 and 54, pins 33 and 34, pins 30 and 31) 1.2 10 1.5 20 500 MIN. TYP. 30 30 65 100 10.5 MAX. 55 45 75 110 15 UNITS mA mA mA mA mA V V nA Ω Ω mA nC V uA VIH VIL IIN RDS RDS IPK QG VOUT IBIASOCD Logic High Input Voltage Logic Low Input Voltage Input Current for logic inputs MOSFET On Resistance (high IOUT = 50mA VN10=10V side) MOSFET On Resistance (low side) IIN = 50mA VN10=10V Peak Output Current Gate Charge Drive Capability Output Voltage for OCD pins Note 7: Minimum and maximum limits are guaranteed but may not be 100% tested. Operating Conditions TP2150B (Note 8) SYMBOL VPP, VNN VN10 V5 TR TF TD1 TD2 TR TF TD1 TD2 Supply Voltage Voltage for FET drive (Volts above VNN) 5V power supply Rise Time (Low Side Driver with no load) Fall Time (Low Side Driver with no load) Rise Time Delay (Low Side Driver with no load) Fall Time Delay (Low Side Driver with no load) Rise Time (High Side Driver with no load) Fall Time (High Side Driver with no load) Rise Time Delay (High Side Driver with no load) Fall Time Delay (High Side Driver with no load) PARAMETER MIN. +/- 15 9 4.5 TYP. +/-45 10 5 8 35 190 135 2 30 160 140 MAX. +/- 65 12 5.5 UNITS V V V nS nS nS nS nS nS nS nS Note 8: Recommended Operating Conditions indicate conditions for which the device is functional. See Electrical Characteristics for guaranteed specific performance limits. 4 TP2150B - MC/ 1.7/06.04 Tr i path Technol ogy, I nc. - Techni cal Information Timing Diagram for Low Side Driver 5V 4.0V INPUT (Y1B, Y2B) 0V 2.5V T D1 VNN+10V VNN+9.6V TR T D2 TF OUTPUT (LO1, LO2) VNN+2.8V VNN Timing Diagram for High Side Driver 5V 4.0V INPUT (Y1, Y2) 0V 2.5V T D1 HOCOM+10V HOCOM+9.6V TR T D2 TF OUTPUT (HO1, HO2) HOCOM+2.8V HOCOM 5 TP2150B - MC/ 1.7/06.04 Tr i path Technol ogy, I nc. - Techni cal Information TP2150B Pinout OCS1HP OCS1HN NC HO1 HO1COM NC LO1COM LO1 VN10 VNN VN10 LO2 LO2COM NC 52 53 54 55 56 57 58 59 60 61 62 63 64 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 HO2COM HO2 NC OCS2HN OCS2HP 32 31 30 29 28 27 26 25 24 23 22 21 20 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 NC OCS1LN OCS1LP NC NC VBOOT1 NC SW-FB SMPSO NC NC NC NC NC OCS2LN OCS2LP NC NC VBOOT2 NC NC NC NC NC NC NC 6 NC NC NC NC AGND V5 OCD1 NC CSS OCD2 NC NC Y2 Y2B 64-pin LQFP (Top View) NC Y1B Y1 NC NC TP2150B - MC/ 1.7/06.04 Tr i path Technol ogy, I nc. - Techni cal Information TP2150B Pin Description Pin 5 6 7 9 10 13,17 14,16 27,57 30,31 33,34 36,48 37,47 39,45 40,44 41,43 42 50,51 53,54 59 60 1,2,3,4,8, 11,12,15, 18,19,20, 21,22,23, 24,25,26, 28,29,32, 35,38,46, 49,52,55, 56,58,61, 62,63,64 Function AGND V5 OCD1 CSS OCD2 Y2,Y1 Y2B,Y1B VBOOT2, VBOOT1 OCS2LP, OCS2LN OCS2HP, OCS2HN HO2,HO1 HO2COM, HO1COM LO2COM, LO1COM LO2,LO1 VN10 VNN OCS1HN, OCS1HP OCS1LN, OCS1LP SW-FB SMPSO NC Type Ground Power Output Input (L) Output Input (L) Input (L) Input Input Input Output Output Output Output Power Power Input Input Input Output NC Description Analog ground. 5V power supply input. Over-current threshold adjustment (Channel 1) Soft start control for VN10 regulator. Should be tied to +5V to enable VN10 generator Over-current threshold adjustment (Channel 2) Non-inverted switching modulator inputs Inverted switching modulator inputs Bootstrapped voltage to supply drive to gate of high-side FET (Channel 2 & 1) Over Current Sense inputs, Channel 2 low-side Over Current Sense inputs, Channel 2 high-side High side gate drive output (Channel 2 & 1) Kelvin connection to source of high-side transistor (Channel 2 & 1) Kelvin connection to source of low-side transistor (Channel 2 & 1) Low side gate drive output (Channel 2 & 1) “Floating” supply input for the FET drive circuitry. This voltage must be stable and referenced to VNN. Negative supply voltage. Over Current Sense inputs, Channel 1 high-side Over Current Sense inputs, Channel 1 low-side Feedback for regulating switching power supply output for VN10 Switching power supply output for VN10 Not connected (bonded) internally. 7 TP2150B - MC/ 1.7/06.04 Tr i path Technol ogy, I nc. - Techni cal Information TP2150B Typical Application Circuit TP2150B 51 OCS1HP 50 OCS1HN 57 VBOOT1 48 HO1 RS 0.01Ω, 1W QO CHBR CHBR DD MUR120 0.1uF 33uF + CS 0.1uF DB MUR120 VN10 RB 250Ω CB 0.1uF + + VPP CS 330uF DSB MUR120 RG 33, 0.5W CBAUX 47uF Y1 17 Y1B 16 OCD1 Level Shift & FET controller 47 HO1COM VN10 44 LO1 DSB MUR120 RS 2.2, 0.5W* Q RG 33, 0.5W O DS MUR120 RB 16Ω, 1W ∗ RS 0.01Ω, 1W CB 220pF* LO 18uH CO 0.15uF RZ 20Ω, 2W CZ 0.15uF RL 6Ω or 8Ω 7 45 LO1COM 54 OCS1LP 53 OCS1LN 59 SW-FB VN10 Switchmode Power Supply CSWFB 0.1uF RSWFB 1kΩ QP IRFL9110 RS 2.2, 0.5W* 60 SMPSO 41, 43 VNN LSW 100uH VN10 CSW 0.1uF + 5V 6 CS 0.1uF V5 AGND RPG 10Ω VN10 VN10 CSW 0.1uF,35V VNN VNN 5 DSW B1100DICT CSW 100uF VNN VNN 42 33 OCS2HP Y2 13 Y2B 14 OCD2 10 34 OCS2HN 27 VBOOT2 36 HO2 RS 0.01Ω, 1W QO CS 0.1uF DB MUR120 VN10 RB 250Ω CB 0.1uF + DSB MUR120 RG 33, 0.5W CHBR CHBR DD MUR120 0.1uF 33uF + Level Shift & FET controller 37 HO2COM VN10 40 LO2 DSB MUR120 RS 2.2, 0.5W* Q RG 33, 0.5W O DS MUR120 RSN 16Ω, 1W ∗ RS 0.01Ω, 1W CSN 220pF* LO 18uH 39 LO2COM 30 OCS2LP 31 OCS2LN RS 2.2, 0.5W* *RS, RB,CB are optional and only recommended for high power 4Ω applications. If RS is not used then it should be 0Ω. NC PINS All of the NC (no connect) pins for the TP2150B can be tied to ground or left floating. 8 TP2150B - MC/ 1.7/06.04 + CS 0.1uF + + CS 0.1uF VNN CS 330uF VPP CS 330uF CBAUX 47uF CO 0.15uF RZ 20Ω, 2W CZ 0.15uF RL 6Ω or 8Ω VNN CS 330uF Tr i path Technol ogy, I nc. - Techni cal Information External Components Description (Refer to the Application/Test Circuit) Components DB Description Bootstrap diode. This diode charges up the bootstrap capacitors when the output is low (at VNN) to drive the high side gate circuitry. A fast or ultra fast recovery diode is recommended for the bootstrap circuitry. In addition, the bootstrap diode must be able to sustain the entire VPP-VNN voltage. Thus, for most applications, a 150V (or greater) diode should be used. High frequency bootstrap capacitor, which filters the high side gate drive supply. This capacitor must be located as close to VBOOT1 (pin 57 of the TP2150B) or VBOOT2 (pin 27 of the TP2150B) for reliable operation. The “negative” side of CB should be connected directly to the HO1COM (pin 47 of the TP2150B) or HO2COM (pin 37 of the TP2150B). Please refer to the Application / Test Circuit. Bulk bootstrap capacitor that supplements CB during “clipping” events, which result in a reduction in the average switching frequency. Bootstrap resistor that limits CBAUX charging current during TP2150B power up (bootstrap supply charging). Supply decoupling for the power supply pins. For optimum performance, these components should be located close to the TP2150B and returned to ground. Over-current sense resistor. Please refer to the section, Setting the Over-current Threshold, in the Application Information for a discussion of how to choose the value of RS to obtain a specific current limit trip point. Supply decoupling for the high current Half-bridge supply pins. These components must be located as close to the output MOSFETs as possible to minimize output ringing which causes power supply overshoot. By reducing overshoot, these capacitors maximize both the TP2150B and output MOSFET reliability. These capacitors should have good high frequency performance including low ESR and low ESL. In addition, the capacitor rating must be twice the maximum VPP voltage. Panasonic EB capacitors are ideal for the bulk storage (nominally 33uF) due to their high ripple current and high frequency design. Gate resistor, which is used to control the MOSFET rise/ fall times. This resistor serves to dampen the parasitics at the MOSFET gates, which, in turn, minimizes ringing and output overshoots. The typical power rating is 1/2 watt. Zobel capacitor, which in conjunction with RZ, terminates the output filter at high frequencies. Use a high quality film capacitor capable of sustaining the ripple current caused by the switching outputs. Zobel resistor, which in conjunction with CZ, terminates the output filter at high frequencies. The combination of RZ and CZ minimizes peaking of the output filter under both no load conditions or with real world loads, including loudspeakers which usually exhibit a rising impedance with increasing frequency. Depending on the program material, the power rating of RZ may need to be adjusted. The typical power rating is 2 watts. Output inductor, which in conjunction with CO, demodulates (filters) the switching waveform into an audio signal. Forms a second order filter with a cutoff frequency of f C = 1 ( 2 π L O C O ) and a quality factor of Q = R L C O L O C O . Output capacitor, which, in conjunction with LO, demodulates (filters) the switching waveform into an audio signal. Forms a second order low-pass filter with a cutoff frequency of f C = 1 ( 2 π L O C O ) and a quality factor of Q = R L C O L O C O . Use a high quality film capacitor capable of sustaining the ripple current caused by the switching outputs. CB CBAUX RB CS RS CHBR RG CZ RZ LO CO 9 TP2150B - MC/ 1.7/06.04 Tr i path Technol ogy, I nc. - Techni cal Information DD DS RPG QB DSW LSW CSW RSWFB CSWFB DSB CSN Drain diode. This diode must be connected from the drain of the high side output MOSFET to the drain of the low side output MOSFET. This diode absorbs any high frequency overshoots caused by the output inductor LO during high output current conditions. In order for this diode to be effective it must be connected directly to the drains of both the top and bottom side output MOSFET. A fast or ultra fast recovery diode that can sustain the entire VPP-VNN voltage should be used here. In most applications a 150V or greater diode must be used. Source diode. This diode must be connected from the source of the high side output MOSFET to the source of the low side output MOSFET. This diode absorbs any high frequency undershoots caused by the output inductor LO during high output current conditions. In order for this diode to be effective it must be connected directly to the sources of both the top and bottom sides output MOSFETs. A fast or ultra fast recovery diode that can sustain the entire VPP-VNN voltage should be used here. In most applications a 150V or greater diode must be used. Gate resistor for the output MOSFET for the switchmode power supply. Controls the rise time, fall time, and reduces ringing for the gate of the output MOSFET for the switchmode power supply. Output MOSFET for the switchmode power supply to generate the VN10. This output MOSFET must be a P channel device. Flywheel diode for the internal VN10 buck converter. This diode also prevents VN10SW from going more than one diode drop negative with respect to VNN. This diode should be a Shottky or ultrafast rectifier. VN10 generator filter inductor. This inductor should be sized appropriately so that LSW does not saturate, and VN10 does not overshoot with respect to VNN during TP2150B turn on. VN10 generator filter capacitors. The high frequency capacitor (0.1uF) must be located close to the VN10 pins (pin 41 and 43 of the TP2150B) to maximize device performance. The bulk capacitor (100uF) should be sized appropriately such that the VN10 voltage does not overshoot with respect to VNN during TP2150B turn on. VN10 generator feedback resistor. This resistor sets the nominal VN10 voltage. With RSWFB equal to 1kΩ, the VN10 voltage generated will typically be 10V above VNN. VN10 generator feedback capacitor. This capacitor, in conjunction with RSWFB, filters the VN10 feedback signal such that the loop is unconditionally stable. HOCOM diode. These diodes must be connected from the HOCOM pin (pin 37 or pin 47 of the TP2150B) to the OCSHN pins (pin 34 or pin 50 of the TP2150B) and the OCSLP pins (pin 30 or 54 of the TP2150B). This diode absorbs any high frequency undershoots caused by the output inductor LO during high output current conditions and protects the TP2150B during these conditions. In order for this diode to be effective it must be connected directly to the HOCOM, OCSHN, and OCSLP pins of the TP2150B. A fast or ultra fast recovery diode that can sustain the entire VPP-VNN voltage should be used here. In most applications a 150V or greater diode must be used. High frequency snubber capacitor works as a low pass filter in conjunction with RSN to remove high frequency ringing components due to over/undershoot on the output switching waveform. High frequency snubber resistor works as a low pass filter in conjunction with CSN to remove high frequency ringing components due to over/undershoot on the output switching waveform. RSN 10 TP2150B - MC/ 1.7/06.04 Tr i path Technol ogy, I nc. - Techni cal Information Application Information Overcurrent Protection The TP2150B has over-current protection circuitry to protect itself and the output MOSFETs from short-circuit conditions. The TP2150B uses the voltage across a resistor RS (measured via OCS1HP, OCS1HN, OCS1LP and OCS1LN for channel 1 of the TP2150B) that is in series with each output MOSFET to detect an over-current condition. RS and ROCR are used to set the overcurrent threshold. The OCS pins must be Kelvin connected for proper operation. The TP2150B has overcurrent sense pins for both the high side output MOSFETs and the low side output MOSFETs. The OCSXHP and OCSXHN pins (pins 33 and 34, pins 50 and 51) sense the amount of current flowing out of the high side MOSFET. The OCSXLP and OCSXLN pins (pins 30 and 31, pins 53 and 54) sense the amount of current flowing into the low side MOSFET. These pins sense the voltage across a low resistance value resistor (RS) and this voltage is gained up and reflected at OCD1 (pin7) for channel 1. The OCD pins can be used to trigger an overcurrent condition at the output MOSFETs and then turn off the processor. Setting Over-current Threshold RS and ROCR determine the value of the over-current threshold, ISC: ISC = 3580 x (VTOC – IBIAS * ROCR)/(R OCR * RS) ROCR = (3580 x VTOC)/(ISC * RS+3580 * IBIAS) where: RS and ROCR are in Ω VTOC = Over-current sense threshold voltage for the processor = 1.0V (typically for the Tripath TC2000 and TC2001) IBIAS = 20uA For example, to set an ISC of 4.73A, ROCR = 30.1kΩ and RS will be 10mΩ. As high-wattage resistors are usually only available in a few low-resistance values (10mΩ, 25mΩ and 50mΩ), ROCR can be used to adjust for a particular over-current threshold using one of these values for RS. It should be noted that the addition of the bulk CHBR capacitor shown in the Application / Test Diagram will increase the ISC level. Thus, it will be larger than the theoretical value shown above. With CHBR as shown in the typical application circuit, and with ROCR = 30.1kΩ and RS 10mΩ, the typical current trip point is 7A. Once the designer has settled on a layout and specific CHBR value, the system ISC trip point can be adjusted by increasing the ROCR value. The ROCR should be increased to a level that allows expected range of loads to be driven well into clipping without current limiting while still protecting the output MOSFETs in case of a short circuit condition. VN10 Supply and Switch Mode Power Supply Controller VN10 is an additional supply voltage required by the TP2150B. VN10 must be 10 volts more positive than the nominal VNN. VN10 must track VNN. Generating the VN10 supply requires some care. The proper way to generate the voltage for VN10 is to use a 10V-postive supply voltage referenced to the VNN supply. The TP2150B has an internal switch mode power supply controller which generates the necessary floating power supply for the MOSFET driver stage in the TP2150B (nominally 10V with the external components shown in Application / Test Circuit). The SMPSO pin (pin 60) provides a switching output waveform to drive the gate of a P channel MOSFET. The source of the P channel MOSFET should be tied to power ground and the drain of the MOSFET should be tied to the VN10 through a 100uH inductor. Tripath recommends using 11 TP2150B - MC/ 1.7/06.04 Tr i path Technol ogy, I nc. - Techni cal Information the internal VN10 generator to power the TP2150B. Figure 6 shows how the VN10 generator should be connected. TP2150B 59 SW -FB VN10 Switchm ode Power Supply C SW FB 0.1uF R SW FB 1 k Ω 60 SM PSO VNN R PG 1 0 Ω QP L SW 100uH VN10 D SW B1100DICT C SW 0.1uF + C SW 100uF VNN Figure 6: VN10 Generator In some cases, though, a designer may wish to use an external VN10 generator. The specification for VN10 quiescent current (100mA typical) in the Electrical Characteristics section states the amount of current needed when an external floating supply is used. If the internal VN10 generator is not used then short the CSS pin to (pin 9) disable this feature. One apparent method to generate the VN10 supply voltage is to use a negative IC regulator to drop PGND down to 10V (relative to VNN). This method will not work since negative regulators only sink current into the regulator output and will not be capable of sourcing the current required by VN10. Furthermore, problems can arise since VN10 will not track movements in VNN. The external VN10 supply must be able to source a minimum of 200mA into the VN10 pin. Thus, a positive supply must be used and must be referenced to the VNN rail. If the external VN10 supply does not track fluctuations in the VNN supply or is not able to source current into the VN10 pin, the TP2150B will not work and can also become permanently damaged. Figure 7 shows the correct way to power the TP2150B: VPP V5 5V PGND VNN 10V VNN F. BEAD AGND VN10 VPP Figure 7: Proper Power Supply Connection 12 TP2150B - MC/ 1.7/06.04 Tr i path Technol ogy, I nc. - Techni cal Information Output Transistor Selection The key parameters to consider when selecting what MOSFET to use with the TP2150B are drainsource breakdown voltage (BVdss), gate charge (Qg), and on-resistance (RDS(ON)). The BVdss rating of the MOSFET needs to be selected to accommodate the voltage swing between VSPOS and VSNEG as well as any voltage peaks caused by voltage ringing due to switching transients. With a ‘good’ circuit board layout, a BVdss that is 50% higher than the VPP and VNN voltage swing is a reasonable starting point. The BVdss rating should be verified by measuring the actual voltages experienced by the MOSFET in the final circuit. Ideally a low Qg (total gate charge) and low RDS(ON) are desired for the best amplifier performance. Unfortunately, these are conflicting requirements since RDS(ON) is inversely proportional to Qg for a typical MOSFET. The design trade-off is one of cost versus performance. A lower RDS(ON) means lower I2RDS(ON) losses but the associated higher Qg translates into higher switching losses (losses = Qg x 10 x 1.2MHz). A lower RDS(ON) also means a larger silicon die and higher cost. A higher RDS(ON) means lower cost and lower switching losses but higher I2RDSON losses. Gate Resistor Selection The gate resistors, RG, are used to control MOSFET switching rise/fall times and thereby minimize voltage overshoots. They also dissipate a portion of the power resulting from moving the gate charge each time the MOSFET is switched. If RG is too small, excessive heat can be generated in the driver. Large gate resistors lead to slower MOSFET switching, which can lead to higher idle current. Recommended MOSFETs The following devices are capable of achieving full performance, both in terms of distortion and efficiency, for the specified load impedance and voltage range. Device Information – Recommended MOSFETs Part Number IRF520N FQP13N10 STP14NF10 IRF530N BUK7575-100A STP24NF10 FQP16N15 FQP19N10 FDP2572 Manufacturer International Rectifier Fairchild Semiconductor ST Microelectronics International Rectifier Philips Semiconductor ST Microelectronics Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor BVDSS (V) 100 100 100 100 100 100 150 100 150 ID (A) 9.7 12.8 14 17 23 26 16.4 19 29 Qg (nC) 25(max.) 12 15.5 37(max.) 25 30 23 19 27 RDS(on) (Ω) 0.20 (max.) 0.142 0.16 0.09 (max.) 0.064 0.055 0.123 0.1 0.045 PD (W) 48 65 60 70 99 85 108 75 135 Package TO220 TO220 TO220 TO220 TO220 TO220 TO220 TO220 TO220 Note: The devices are listed in ascending current capability not in order of recommendation. The following information represents qualitative data from system development using the TP2150B along with the Tripath TC2001 processor and the associated MOSFETs. Recommendations such as maximum supply voltages and gate resistor values are dependent on the PCB layout and component location. The gate resistor values were chosen to achieve about 18-80mA of idle current from the VPP supply. This value of supply current is a good compromise between low power efficiency and high frequency THD+N performance. As shown in Table 2 below, increasing the gate resistor value will improve high frequency THD+N performance at the expense of idle current draw. The BBM setting was 40nS in all cases. It should be understood that different MOSFETs will have different characteristics and will require some adjustment to the gate resistor to achieve the same idle current. 13 TP2150B - MC/ 1.7/06.04 Tr i path Technol ogy, I nc. - Techni cal Information 10 5 2 1 0.5 0.2 % 0.1 0.05 0.02 0.01 0.005 0.002 T HD+N versus Frequency versus G ate Resistance R L = 6Ω P out = 25W /Channel FE T's = FQP13N10 f = 1k Hz BB M = 40nS V S = + 40V BW = 22Hz - 22k Hz R G = 22 Ω RG = 3 3 Ω R G = 4 6.4 Ω % R L = 8Ω P out = 20W /Channel FE T's = FQP 13N10 f = 1kHz 1 B B M = 40nS 0.5 V S = + 40V B W = 22Hz - 22kHz 0.2 5 2 0.1 0.05 0.02 0.01 0.005 0.002 10 THD+N versus Frequency versus Gate R esistance RG = 2 2 Ω RG = 3 3 Ω R G = 4 6.4 Ω 0.001 20 50 100 200 500 Hz 1k 2k 5k 10k 20k 0.001 20 50 100 200 500 Hz 1k 2k 5k 10k 20k 6 ohm and 8 ohm plots of THD+N versus Frequency for various gate resistor values 6 ohms 18mA 20mA 80mA 8 ohms 18mA 20mA 80mA 22 ohms 33 ohms 46.4 ohms Table 2: Idle current draw for VPP with various gate resistor values Application Information – Recommended MOSFETs Part Number IRF520N FQP13N10 STP14NF10 IRF530N BUK7575-100A STP24NF10 FQP16N15 FQP19N10 FDP2572 Recommended Max Supply Voltage +/-45V +/-45V +/-45V +/-45V +/-45V +/-45V +/-60V +/-45V +/-60V Typical Load at Maximum Supply 8 ohm SE 6 ohm SE 6 ohm SE 4 ohm SE / 8 ohm BR 4 ohm SE / 6 ohm BR 4 ohm SE / 6 ohm BR 6 ohm SE / 8 ohm BR 6 ohm SE 4 ohm SE / 6 ohm BR Recommended Gate Resistor 22 ohms 33 ohms 33 ohms 15 ohms 15 ohms 10 ohms 15 ohms 33 ohms 15 ohms Other applications Only for 8 ohm SE Loads 6 ohm BR at +/25V 8 ohm BR at +/-33V 6 ohm BR at +/-25V 8 ohm BR at +/-33V 6 ohm BR at +/-33V 4 ohm BR at +/-33V 4 ohm BR at +/-35V 6 ohm BR at +/-45V 6 ohm BR at +/-25V 8 ohm BR at +/-33V 4 ohm BR at +/-45V SE stands for Single Ended Outputs and BR stands for Bridged Output MOSFETs Under Evaluation The following MOSFETs appear to be suitable for use with the TP2150B, and we are waiting for samples to evaluate. Most of these devices come from the same “family” or generation, as other recommended MOSFETs. However, experience tells us that we cannot recommend any devices until we have received samples and fully tested them. Device Information – MOSFETs Under Evaluation Part Number FQP14N15 FDP3682 Manufacturer Fairchild Semiconductor Fairchild Semiconductor BVDSS (V) 150 100 ID (A) 14.4 32 Qg (nC) 18 18.5 RDS(on) (Ω) .164 0.032 PD (W) 104 95 Package T0220 TO220 Note: The devices are listed in ascending current capability not in order of recommendation. 14 TP2150B - MC/ 1.7/06.04 Tr i path Technol ogy, I nc. - Techni cal Information Output Filter Design One advantage of Tripath amplifiers over PWM solutions is the ability to use higher-cutofffrequency filters. This means load-dependent peaking/droop in the 20kHz audio band potentially caused by the filter can be made negligible. This is especially important for applications where the user may select a 6-Ohm or 8-Ohm speaker. Furthermore, speakers are not purely resistive loads and the impedance they present changes over frequency and from speaker model to speaker model. Tripath recommends designing the filter as a 2nd order, 100kHz LC filter. Tripath has obtained good results with LF = 11uH and CF = 0.15uF for 6Ω and 8Ω loads and LF = 18uH and CF = 0.22uF for 4Ω loads. The core material of the output filter inductor has an effect on the distortion levels produced by a TP2150B amplifier. Tripath recommends low-mu type-2 iron powder cores because of their low loss and high linearity (available from Micrometals, www.micrometals.com). Tripath also recommends that an RC damper be used after the LC low-pass filter. No-load operation of a TP2150B amplifier can create significant peaking in the LC filter, which produces strong resonant currents that can overheat the output MOSFETs and/or other components. The RC dampens the peaking and prevents problems. Tripath has obtained good results with RZ = 20Ω and CZ = 0.15uF for 6Ω and 8Ω loads and RZ = 15Ω and CZ = 0.22uF for 4Ω loads. 15 TP2150B - MC/ 1.7/06.04 Tr i path Technol ogy, I nc. - Techni cal Information TP2150B Package Information 64-pin LQFP 16 TP2150B - MC/ 1.7/06.04 Tr i path Technol ogy, I nc. - Techni cal Information TP2150B Package Information 64-pin LQFP 17 TP2150B - MC/ 1.7/06.04 Tr i path Technol ogy, I nc. - Techni cal Information PRELIMINARY – This product is still in development. Tripath Technology Inc. reserves the right to make any changes without further notice to improve reliability, function or design. This data sheet contains the design specifications for a product in development. Specifications may change in any manner without notice. Tripath and Digital Power Processing are trademarks of Tripath Technology Inc. Other trademarks referenced in this document are owned by their respective companies. Tripath Technology Inc. reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Tripath does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. TRIPATH’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN CONSENT OF THE PRESIDENT OF TRIPATH TECHNOLOGY INC. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform, when properly used in accordance with instructions for use provided in this labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Contact Information TRIPATH TECHNOLOGY, INC 2560 Orchard Parkway, San Jose, CA 95131 408.750.3000 - P 408.750.3001 - F For more Sales Information, please visit us @ www.tripath.com/cont_s.htm For more Technical Information, please visit us @ www.tripath.com/data.htm 18 TP2150B - MC/ 1.7/06.04