HFET2MI

0.5-µm HFET 2MI Process Data Sheet 4.6 µm PLATING CAP TOP PLATE 2000 Å NITRIDE 0.75 µm FIRST METAL TaN RESISTOR GATE ACTIVE REGION OHMIC METAL (EXCEPT VIA) SEMI-INSULATING GaAs SUBSTRATE Features • • • • • • • • • • • • 0.5-µm amplifier transistors 0.5-µm switch transistors 0.5-µm diodes Device passivation High-Q passives MIM capacitors TaN resistors GaAs resistors 2 metal layers Air bridges Substrate vias Operation up to Vd = 10 V Up to 20 GHz Communications Space Military Power amplifiers Driver amplifiers AGC amplifiers Limiting amplifiers Transimpedance amplifiers Differential amplifiers VIA UNDER CAP 0.5-µm 2MI Process Cross Section Applications • • • • • • • • • • General Description The 0.5-µm Heterostructure FET (HFET) process is a depletion-mode 2MI (2-metal-interconnect) process for applications through 20 GHz. The HFET I-V characteristics provide for high power, high linearity, extraordinary transconductance uniformity and high breakdown voltages. Passives include 2 thick-metal interconnect layers, precision TaN resistors, GaAs resistors, MIM capacitors and throughsubstrate vias. The capacitor-over-via process aides in size compaction and offers excellent grounds at higher frequencies. 500 West Renner Road Richardson, Texas 75080 Semiconductors for Communications, Space and Military www.TriQuint.com Specifications are subject to change. Page 1 of 6; 1/30/06 Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com 0.5-µm HFET 2MI Process Data Sheet 0.5-µm HFET Process Details Element FETs Idss Gm Vbd Vp MIM capacitors Capacitors over vias TaN resistors GaAs resistors Vias Substrate thickness sheet resistance sheet resistance density Parameter Typical Value 225 165 -22 -1.85 300 yes 50 110 yes 100 µm Ω/sq Ω/sq Units mA/mm mS/mm V V pF/mm2 FET Models Available (Noise) Gate Pitch (µm) 25 40 26 26 38 38 Gate Fingers 12 4 10 FET Sizes (µm) 1200 300 600 500 West Renner Road Richardson, Texas 75080 Semiconductors for Communications, Space and Military www.TriQuint.com Specifications are subject to change. Page 2 of 6; 1/30/06 Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com 0.5-µm HFET 2MI Process Data Sheet 0.5-µm HFET 2MI DC Characteristics 500 West Renner Road Richardson, Texas 75080 Semiconductors for Communications, Space and Military www.TriQuint.com Specifications are subject to change. Page 3 of 6; 1/30/06 Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com 0.5-µm HFET 2MI Process Data Sheet 0.5-µm HFET 2MI Maximum Available Gain/Stable Gain (MAG/MSG) 10 x 60 µm FET @ 8 Volts, 75 mA/mm Application Examples Ultra-Linear Power Amplifier TGA2801D-SG: This amplifier provides a flat gain along with ultra-low distortion. It also provides a high output power with a low DC power consumption. This amplifier is ideally suited for use in CATV distribution systems or other applications requiring high output powers and extremely low distortion. 500 West Renner Road Richardson, Texas 75080 Semiconductors for Communications, Space and Military www.TriQuint.com Specifications are subject to change. Page 4 of 6; 1/30/06 Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com 0.5-µm HFET 2MI Process Data Sheet 0.5-µm HFET 2MI Power Tuned Load 600 µm FET @ 8 Volts, 45 mA, 10 GHz 30 25 20 15 10 5 0 5 10 Pin (dBm) 0.5-µm HFET 2MI Efficiency Tuned Load 600 µm FET @ 8 Volts, 45 mA, 10 GHz 60 50 40 30 20 10 0 15 20 P o u t (d B m ) 30 25 P o u t (d B m ) 20 15 10 5 0 5 10 Pin (dBm) Semiconductors for Communications, Space and Military www.TriQuint.com Specifications are subject to change. Page 5 of 6; 1/30/06 60 50 P A E (% ) 40 30 20 10 0 15 20 500 West Renner Road Richardson, Texas 75080 Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com P A E (% ) 0.5-µm HFET 2MI Process Data Sheet Prototyping and Development • Prototype Wafer Option (PWO) • Customer-specific masks • Customer schedule • 2 wafers delivered • Backside vias included • PCM (process control monitor) qualified wafers Process Status 0.5-µm Heterostructure FET (HFET) is fully released and qualified Contact TriQuint or visit http://www.triquint.com/company/quality/ for more information on quality and reliability. • Applications Services Design Tools • • • • • • • • Device libraries of circuit elements: • FETs • Thin-film and implanted resistors • Capacitors • Inductors Agilent ADS design kit MASC Library AWR Microwave Office library • • Tiling of GDSII stream files including PCM (process control monitor) Design rule checking Layout versus schematic checking Engineering: • On-wafer DC test • On-wafer RF test • Thermal analysis • Yield enhancement Part qualification Failure analysis Training • GaAs design classes: • Half-day introduction upon request • 3 day technical training upon request at the TriQuint Texas facility Manufacturing Services • • • • • • • Mask making Wafer thinning Wafer dicing Substrate vias DC die-sort testing RF on-wafer testing Final visual testing 500 West Renner Road Richardson, Texas 75080 Semiconductors for Communications, Space and Military www.TriQuint.com Specifications are subject to change. Page 6 of 6; 1/30/06 Phone: 972-994-8200 Foundry: 972-994-4545 Email: info@triquint.com