PD25025F

PD25025F 25 W, 2.3GHz - 2.5GHz , N-Channel E-Mode, Lateral MOSFET Introduction The PD25025F is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for 2.3GHz - 2.5GHz Class AB wireless base station amplifier applications. This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance, reliability, and thermal resistance. Packaged in an industry-standard CuW package capable of deliver ing a minimum output power of 25 W, it is ideally suited for today's RF power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: Sym R JC Value 2.1 Unit °C/W Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Drain Current—Continuous Derate Above 25 ° C: Operating Junction Temperature Storage Temperature Range Sym Value VDSS 65 VGS –0.5, +15 ID 4.25 120.7 — TJ 0.69 200 Unit Vdc Vdc Adc W W/°C °C Total Dissipation at TC = 25 °C: PD TSTG –65, +150 °C PD25025F (flanged) Figure 1. Available Packages Features * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. • Application Specific Performance, 2.5 GHz Typical 2-Tone Performance Average Load Power – 12.5 W ηD – 30% Power Gain – 12.5 dB IMD3: -30dBc @ -100kHz/ +100KHz Table 3. ESD Rating* HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 • • Typical CW Performance Average Load Power – 25 W ηD – 40% Power Gain – 12.0 dB * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Devices Agere employs a human-body model (HBM), a machine model (MM), and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and JESD22-C101A (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. PD25025F 25 W, 2.3GHz - 2.5GHz , N-Channel E-Mode, Lateral MOSFET Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TC = 30 °C. Table 4. dc Characteristics Parameter 100 Drain-source Breakdown Voltage (VGS = 0, ID = 150 uA) Off Characteristics Symbol V(BR)DSS IGSS IDSS Gm Min 65 — — 1 — — Typ — Max — 1.0 0.1 100 1.0 — Unit Vdc Zero Gate Voltage Drain Leakage Current (VDS = 28 V, VGS = 0 V) Forward Transconductance (VDS = 10 V, ID = 2.0 A) Gate Threshold Voltage (VDS = 10 V, ID = 1 mA ) Drain-source On-voltage (VGS = 10 V, ID = 1.0 A) Gate-source Leakage Current (VGS =15V, VDS = 0 V) — On Characteristics — 3 mAdc S µAdc Gate Quiescent Voltage (VDS = 28 V, IDQ = 330 mA) Table 5. RF Characteristics Rating Input capacitance * (including matching capacitor) (VDS=28V, VGS=0V, f = 1MHz) Output capacitance * (including matching capacitor) (VDS= 28V, VGS=0V, f = 1MHz) Feedback capacitance * (VDS=28V, VGS=0V, f = 1MHz) * Part is internally matched on input and output. Symbol CISS COSS CRSS VGS(TH) VDS(ON) VGS(Q) 2.7 0.3 3.5 3.7 — 4.5 — Vdc Vdc Vdc Min - Typ 74 352 1.6 Max - Unit pF pF pF RF and Functional Tests Rating (InBroadband Fixture, Tc=25° C unless otherwise specified) CW Low Power Gain, Pout=8W VDD=28V, IDQ=330mA, f=2300MHz and 2500MHz CW Power Gain, Pout = 25 W VDD=28V, IDQ=330mA, f=2300MHz and 2500MHz CW Drain Efficiency, Pout = 25 W, VDD=28V, IDQ=330mA, f=2300MHz and 2500MHz Two-Tone Common-Source Amplifier Power Gain VDD=28V, IDQ=330mA, Pout = 25 W PEP f1 =2500 MHz and f2=2500.1 MHz Two-Tone Intermodulation Distortion VDD=28V, IDQ=330mA, Pout = 25 W PEP f1 =2500 MHz and f2=2500.1 MHz Two-Tone Drain Efficiency VDD=28V, IDQ=330mA, Pout = 25 W PEP f1 =2500 MHz and f2=2500.1 MHz Input Return Loss VDD =28V, Pout = 25 W PEP, IDQ=330mA f1 =2300 MHz and 2500 MHz, Tone Spacing = 100kHz Load Mismatch Tolerance VDS=28V, IDQ= 330 mA, Pout=25W, f=2500 MHz Symbol GL GP ηD GTT IMD ηD2Τ IRL VSWR Min 12.5 12 35 12.5 26 10:1 Typ 40 -30 30 - Max 28 -9 - Unit dB dB % dB dBc % dB Ψ PD25025F N-Channel E-Mode, Lateral MOSFET Package Dimensions All dimensions are in inches. Tolerances are ±0.005 in. unless specified. 1 PEAK DEVICES PD25025F XXXX 3 1 3 2 2 PINS: 1. DRAIN 2. GATE 3. SOURCE XXXX - 4 Digit Trace Code