T1P2701012-SP

T1P2701012-SP 10 W, 12V, 500 MHz—3GHz, PowerbandTM pHEMT RF Power Transistor Introduction The T1P2701012-SP is a POWERBANDTM discrete pHEMT, depletion mode, RF Power transistor designed to operate from 500MHz to 3GHz in wide-band circuits. The device has an instantaneous band-width P1dB output power of 10watts across the entire band when operated in the TriQuint wide-band test fixture. The T1P2701012-SP can also be used in narrow band applications and is rated at 15Watts P1dB at 3GHz. Figure 1. Available Packages Table 1. Maximum Ratings Sym V+ Vl+ PD TCH Parameter Positive Supply Voltage Negative Supply Voltage Range Positive Supply Current Power Dissipation Operating Channel Temperature Value 12.5 V –5V to 0V 5.6A 70 mA See note 3 150 C o Notes 2/ 2/ 2/ 3/ 4/ | lG | Gate Supply Current 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ For a median life time of 1E+6 hrs, Power dissipation is limited to: PD(max) = (150 °C – TBASE °C) / 8.3 (°C/W) 4/ Junction operating temperature will directly affect the device median time to failure(TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. Table 2. Thermal Information Parameter Test Conditions TCH (°C) 145 θJC (°C/W) 8.3 TM (HRS) 1.6E+6 θJC Thermal Resis- Vd = 10 V tance (channel to Idq = 900 mA backside of carrier) Pdiss = 9 W Features — Exceptional Instantaneous band-width performance from 500MHz – 3GHz — Increased efficiency results in significant advantages — Smaller and lighter systems — Reduced system component costs — Reduced energy consumption — Typical Performance ratings — Wide-Band 500MHz-3GHz (as tested in TriQuint Wideband Fixture) — 10dB gain — 50% Efficiency — 10Watt P1dB — Narrow Band up to 3GHz — 12dB gain — 60% efficiency — 15Watt P1dB Preliminary Data Sheet Subject to Change www.triquint.com/powerband T1P2701012-SP 10 W, 12V, 500 MHz—3GHz, PowerbandTM pHEMT RF Power Transistor Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TA = 25 °C. Table 3. dc Characteristics Parameter Saturated Drain Current Transconductance Pinch-off Voltage Breakdown Voltage Gate-Source Breakdown Voltage Gate-Drain Table 4. RF Characteristics Parameter Gain @ P1dB, 500MHz-3GHz (VDS = 12 V, POUT = 10 W, IDD = 200 mA) P1dB, 500MHz-3GHz (VDS = 12 V, POUT = 10 W, IDD = 200 mA) Power Added Efficiency, 500MHz-3GHz (VDS = 12 V, POUT = 10 W, IDD = 200 mA) Gain (VDS = 12 V, POUT = 15 W, IDQ = 200 mA) Output Power (VDS = 12 V, 1 dB compression, IDQ = 200 mA) Drain Efficiency (VDS = 12 V, POUT = P1dB, IDQ = 200 mA) Ruggedness (VDS = 12 V, POUT = 15 W, IDQ = 200 mA, f = 500 MHz, VSWR = 3:1, all angles) Symbol G P1dB — Min — — — Typ 10 10 45 Max — — — Unit dB W % Functional Tests, Instantaneous Band-Width (Tested in TriQuint’s Wide-Band Test Fixture) Symbol Idss Gm VP VBGS VBGD Min — — -1.35 -30 -30 Typ 3000 4000 -1 — — Max — — -0.65 -8 -15 Unit mA mS V V V Functional Tests, Narrow Band RF Performance (1GHz) G P1dB — — — — — 17 15 59 — — — dB W % No degradation in output power. Preliminary Data Sheet Subject to Change www.triquint.com/powerband T1P2701012-SP 10 W, 12V, 500 MHz—3GHz, PowerbandTM pHEMT RF Power Transistor Typical Instantaneous Wideband Peformance Data, 500MHz-2.7GHz (tested in TriQuint Wideband Fixture) Preliminary Data Sheet Subject to Change www.triquint.com/powerband T1P2701012-SP 10 W, 12V, 500 MHz—3GHz, PowerbandTM pHEMT RF Power Transistor Package Dimensions Note: All dimensions in inches. Scale 8:1 .320 .090 .087 .350 45° X .085 .063 .006 2 .351 .090 4 .040 1 .360 Preliminary Data Sheet Subject to Change www.triquint.com/powerband