TQ5132

WIRELESS COMMUNICATIONS DIVISION TQ5132 Control 2 RFA Gain RF IN Select GND VDD Control 1 Mode Select/ LO Input Control 3 IFA Gain Select AMPS IF Out DATA SHEET LO IN GIC 3V Cellular Band CDMA/AMPS RFA/Mixer IC CDMA IF IF Out Out IF Out Features Small size: SOT23-8 Single 3V operation Product Description The TQ5132 is a 3V, RFA/Mixer IC designed specifically for Cellular band CDMA/AMPS applications. It’s RF performance meets the requirements of products designed to the IS-95 and AMPS standards. The TQ5132 is designed to be used with the TQ3131 or TQ3132 (CDMA/AMPS LNA) which provides a complete CDMA receiver for 800MHz dual-mode phones. The RFA/Mixer incorporates on-chip switches which determine CDMA, AMPS and bypass mode select. When used with the TQ3131 or TQ3132 (CDMA/AMPS LNA), four gain steps are available. The RF input port is internally matched to 50 Ω, greatly simplifying the design and keeping the number of external components to a minimum. The TQ5132 achieves good RF performance with low current consumption, supporting long standby times in portable applications. Coupled with the very small SOT23-8 package, the part is ideally suited for Cellular band mobile phones. Electrical Specifications1 Parameter Frequency Gain Noise Figure Input 3rd Order Intercept DC supply Current Min Typ 881 15.0 4.5 2.5 15.0 Max Units MHz dB dB dBm mA Low-current operation Gain Select Mode Select High IP3 performance Few external components Applications IS-95 CDMA Mobile Phones AMPS Mobile Phones Dual Mode CDMA Cellular application Note 1: Test Conditions: Vdd=2.8V, RF=881MHz, LO=966MHz, IF=85MHz, Ta=25C, CDMA High Gain state. For additional information and latest specifications, see our website: www.triquint.com 1 TQ5132 Data Sheet Electrical Characteristics Parameter RF Frequency IF Frequency Range CDMA Mode-High Gain Gain Noise Figure Input IP3 Supply Current (TA = 25°C) CDMA Mode-High Gain Low Linearity Gain Noise Figure Input IP3 Supply Current (TA = 25°C) CDMA Mode-Mid Gain Gain Noise Figure Input IP3 Supply Current (TA = 25°C) CDMA Mode-Low Gain Gain Noise Figure Input IP3 Supply Current (TA = 25°C) AMPS Mode Gain Noise Figure Input IP3 Supply Current (TA = 25°C) Supply Voltage Absolute Maximum Ratings Parameter DC Power Supply Power Dissipation Operating Temperature Storage Temperature Signal level on inputs/outputs Voltage to any non supply pin Value 5.0 500 -30 to 85 -60 to 150 +20 +0.3 Units V mW C C dBm V 2.8 -4.9 7.7 12.0 5.0 -1.0 9.0 10.3 3.15 12.6 7.7 dB dB dBm mA V 7.4 5.2 8.0 10.0 11.0 14.0 17.5 10.2 12.8 dB dB dBm mA 5.0 11.0 14.0 13.5 dB dB dBm mA 18.5 4.0 -0.3 18.0 dB dB dBm mA -2.2 12.6 16.0 4.5 2.5 18.0 21.0 18.2 7.2 dB dB dBm mA Conditions Cellular band High side LO Min. 869 85 Typ/Nom 881 Max. 894 130 Units MHz MHz Note 1: Test Conditions: Vdd=2.8 to 3.15V, RF=869-894MHz, LO=High side –6 to –2dBm, IF=85MHz, TA= -30 to 85° C, unless otherwise specified. 2 For additional information and latest specifications, see our website: www.triquint.com TQ5132 Data Sheet Typical Performance, Note: HG Mode=CDMA High Gain, LG Mode=CDMA Low Gain Test Conditions, unless otherwise specified: Vdd=2.8V, Ta=25C, RF=881MHz, LO=966MHz, LO input=-4dBm, IF=85MHz Gain vs. Frequency 18 16 14 Gain (dB) Gain vs. Temperature 18 16 14 Gain (dB) HG Mode LG Mode AMPS 12 10 8 6 4 869 875 882 Frequency (MHz) Input IP3 vs. Frequency 14 12 10 8 6 4 2 0 -2 869 875 882 888 Frequency (MHz) 894 HG Mode LG Mode AMPS 12 10 8 6 4 HG Mode LG Mode AMPS 888 894 -30 0 25 Temperature (Celsius) 55 85 Input IP3 vs. Temperature 14 12 10 Input IP3 (dBm) 8 6 4 2 0 -2 -4 -30 0 25 Temperature (Celsius) 55 85 HG Mode LG Mode AMPS Input IP3 (dBm) Noise Figure vs. Frequency 12 10 Noise Figure (dB) 8 6 4 2 0 869 875 882 Frequency (MHz) 888 894 HG Mode LG Mode AMPS Noise Figure vs. Temperature 12 10 Noise Figure (dB) 8 6 4 2 0 -30 0 25 Temperature (Celsius) HG Mode LG Mode AMPS 55 85 For additional information and latest specifications, see our website: www.triquint.com 3 TQ5132 Data Sheet Idd vs. Temperature 20 18 16 14 12 10 8 6 4 2 0 -30 0 25 Temperature (Celsius) 12 10 Noise Figure (dB) 8 6 4 2 0 55 85 -6 -4 LO Power (dBm) -2 HG Mode LG Mode AMPS Noise Figure vs. LO Power Idd (mA) HG Mode LG Mode AMPS Gain vs. LO Power 18 16 14 Gain (dB) 12 10 8 6 4 2 0 -6 -4 LO Power (dBm) -2 HG Mode LG Mode AMPS Gain vs. Vdd 18 15 Gain (dB) 12 9 6 3 2.8 3 Vdd (volts) 3.15 HG Mode LG Mode AMPS Input IP3 vs. LO Power 14 12 10 Input IP3 (dBm) 8 6 4 2 0 -2 -4 -6 -4 LO Power (dBm) -2 HG Mode LG Mode AMPS Input IP3 vs. Vdd 14 12 Input IP3 (dBm) 10 8 6 4 2 0 -2 2.8 3 Vdd (volts) 3.15 HG Mode LG Mode AMPS 4 For additional information and latest specifications, see our website: www.triquint.com TQ5132 Data Sheet Noise Figure vs. Vdd 12 10 Noise Figure (dB) 8 6 4 2 0 2.8 3 Vdd (volts) 3.15 HG Mode LG Mode AMPS Idd vs. Vdd 20 18 16 14 12 10 8 6 4 2 0 2.8 3 Vdd (volts) Idd (mA) HG Mode LG Mode AMPS 3.15 For additional information and latest specifications, see our website: www.triquint.com 5 TQ5132 Data Sheet Control 2 R1 L4 RF input C22 GND R2 GIC R3 CDMA IF Out C7 C4 IF Out L2 VDD C5 IF Out LO IN RF IN VDD VDD RF AMP Gain Select Control 1 Mixer Mode Select R4 C12 LO INPUT Control 3 IF AMP Gain Select C9 L3 VDD C8 AMP's IF Out C10 C6 Application/Test Circuit Bill of Material for TQ5132 RF AMP/Mixer Component Receiver IC Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Resistor Resistor Resistor Inductor Inductor Inductor Reference Designator U1 C4 C10 C5,C8 C6 C7 C9 C12 C22 R1, R4 R2 R3 L2 L3 L4 Part Number TQ5132 .022µF 18pF 1200pF 27pF 30pF 15pF 100pF 2.7pF 5.1K Ω 6.8 Ω 180Ω 180nH 270nH 18nH Value Size SOT23-8 0402 0402 0402 0402 0402 0402 0402 0402 0402 0402 0402 0805 0805 0402 Manufacturer TriQuint Semiconductor 6 For additional information and latest specifications, see our website: www.triquint.com TQ5132 Data Sheet TQ5132 Product Description The TQ5132 is a miniature low noise mixer (downconverter) in a small SOT-23-8 package (2.9X2.8X1.14 mm) with operation at 2.8v. The TQ5132 specs are designed to be compatible with IS98 Interim Standard for Dual-Mode CDMA cellular systems. The low noise mixer features an AMPS control pin for Gain, Intercept and Current (GIC pin) and it has excellent intermodulation characteristics with high intercept point in all modes. For optimum performance the TQ5132 RF frequency of operation should be from 869 to 894 MHz. The IF range is from 85 to 130 MHz and its injection mode for the local oscillator is high side. Operation The TQ5132 is a single-ended mixer with switching capabilities for the various signal levels found in CDMA applications. The TQ5132 combines a RF amplifier, a LO driver amplifier, and separate digitally controlled IF amplifiers for CDMA and AMPS outputs. TQ5132 RF / C2 0.5 TQ5132 1.0 2.0 A Input Impedance 0.76 @ -65.5 z = 0.44 - j 1.46 y = 0.19 + j 0.63 Freq=881MHz 0.5 1.0 2.0 A -0.5 -1.0 -2.0 Figure 2. TQ5132 RF Amplifier Input Impedance LO Buffer Amplifier The LO buffer amplifier is a grounded gate FET with a broadband match to 50Ω. It has on-chip DC block and on-chip LO tuning circuit to shape the frequency response and drive it to a level suitable for the gate of the mixer FET. Thus the optimum 1 2 3 4 8 7 6 5 Mx Vdd LO frequency range is fixed and centered around 990mhz. The LO is limited to high-side injection mode and it operates from 950MHz to 1030MHz. The input to the LO buffer is through pin 7 which also feeds the control line (C1) that selects the mixer mode of operation, either CDMA or AMPS. Due to this logic control, the only external component required at the LO port is a series capacitor to prevent DC from traveling to other parts of the system. The LO drive level of operation should be between 7 and 0 dBm. Best performance is obtained between –6 and – 2 dBm. LO/filter/Mixer interaction The physical position of the image reject filter is likely to have an effect on the performance of the mixer especially in the Low Gain mode where the RF amplifier is switched out. This is primarily due to self-mixing of the LO energy bouncing from the filter back into the mixer either out-of-phase or in-phase creating an offset in magnitude. To minimize this effect, TriQuint recommends placing the image-reject filter as close to the IC as possible. In TriQuint’s demo board its position is 42 mils from the pad of the matching inductor and 126 mils from the IC pad. This location for the image-reject filter works well. GND LO / C1 GIC IFA GS / C3 CDMA IF Output AMPS IF Output Figure 1. TQ5132 Block Diagram Circuit Description RF Amplifier The TQ5132 has an integrated pre-amplifier stage in a cascode configuration. The output is internally matched to 50 ohms at 881MHz. Pin 1 requires an external match that is set to deliver a 2:1 VSWR in both the low and high gain modes (i.e. RFA is on or off). Figure 2 shows an approximated impedance at pin 1 (RFA input) to implement any desired match. Remember to apply the LO signal when tuning the RF match. For additional information and latest specifications, see our website: www.triquint.com 7 TQ5132 Data Sheet CDMA IF Amplifier The CDMA IF amplifier is an open drain stage with a gain step to adjust the output power levels according to the system requirement. No quiescent current adjustments are possible in this mode since the self-bias circuit is on-chip. While the IF output can be tuned for frequencies as high as 500 MHz, the downconverter performance is limited by the internal tuned circuit of the LO buffer amplifier. The highest IF that can be used without significant deviation from typical performance is 130 MHz. This output is a high impedance open drain FET z = 5.47 – j 0.71 Ω (normalized). The match requires a RF choke to Vdd for proper biasing (see figure 3). Typical CDMA IF output impedance is shown in figure 4. The gain of the CDMA IF amplifier can be adjusted according to the degeneration resistor value R2 (see figure 5). TQ5132 1 2 3 CDMA IF Output C6=27pF AMPS IF Amplifier The source of the AMPS IF amplifier is connected directly to pin 3. This allows the system designer to adjust Gain, output Intercept and Current (GIC) by adding an external self-bias circuit at this pin (see figure 5). A large bypass capacitor value in the self-bias circuit minimizes the effects of low frequency components present at this pin. TriQuint recommends 0.022uF or greater. The AMPS IF amplifier gain is only mildly affected by the value of R2. TQ5132 1 2 R2 R3 C4 3 4 8 7 6 5 8 7 6 5 C4 = 0.022uF R2 = 6.8 Ω R3 = 180 Ω Note: These values were optimized for TriQuint's 5131 Demo board. The discrepancy between these values and those of the customer's application may differ due to board and component parasitics. 4 C7=30pF L2=180nH Vdd Note: These values were optimized for TriQuint's 5131 Demo board. The discrepancy between these values and those of the customer's application may differ due to board and component parasitics. Figure 5. TQ5132 AMPS GIC pin Once the operating point is chosen, the designer still has flexibility to adjust gain and intercept by varying the ratio of the DC bias resistors, R2/R3. Maximum gain is obtained when the total DC resistance (R2 + R3) at pin 3 is bypassed. The normalized impedance of the AMPS IF output is z = 15.4 – j TQ5132 Figure 3. TQ5132 CDMA IF Output Match (IF = 85MHz) 1.0 0.5 2.0 2.87 Ω. This particular measurement was taken on the 5132 demo board by lifting pin 5 of the PCB pad and soldering the center conductor of a semirigid probe next to it. The outer conductor was grounded close to the pin and its electrical length dialed as a port extension in order to move the calibration reference plane right at the tip of the probe. Keep in mind that the total DC bias resistance in the GIC pin must be selected before taking this measurement. When designing the PCB, it is recommended to place the self-bias circuit of the amplifier as close to the pin as possible to minimize possible loading effects that might cause oscillation. Similarly, the shunt capacitor C10 B CDIF output Impedance 0.70 @ -2.8 z = 5.47- j 0.71 y = 0.18 + j 0.02 Freq=85MHz 0.5 1.0 2.0 B -0.5 -1.0 -2.0 Figure 4. TQ5132 CDMA IF Output Impedance at Pin 4 8 For additional information and latest specifications, see our website: www.triquint.com TQ5132 Data Sheet of the IF match should be grounded close to the IC (see figure 6). After designing the IF match in simulation using the given Sparameters, some adjustment might be needed when implementing the match on the bench. At this point remember that the LO driver amplifier must be turned on since the IFA is directly coupled to the mixer FET. Figure 6 shows the circuit topology and component values designed for TriQuint's demo board. Figure 7 shows a typical AMPS IF output impedance. TQ5132 1 2 3 4 8 7 6 C9=15pF decoupling network has a PI configuration. On the main Vdd node, a large capacitor of 0.022 uF is used, followed by a 3.3 or 10 ohm resistor in series with the supply line. Last, a bypass capacitor that presents a low impedance to ground at the RF frequency is normally placed very close to the pin. However, in the TQ5132 this bypass capacitor on the IC node is on-chip and the external one near the IC is not needed. Board Layout Recommendations All ground pins should be kept close to the IC and have its own via to the ground plane to minimize inductance. Most PC boards for portable applications have thin dielectric layers and very narrow line width which increase the board parasitic capacitance and inductance. To minimize these effects when implementing a matching network, it is recommended to relieve the ground underneath pads carrying RF signals whenever possible. Control Line Description The control lines can be toggled between high and low levels using CMOS logic circuitry. Control line C1 is used to switch between CDMA and AMPS IF output. The other two control lines C2 and C3 set the various CDMA output levels required by the system. Table 1. Downconverter Control Lines C1, C2, C3 5 C10=18pF L3=270nH AMPS IF Output Vdd Note: These values were optimized for TriQuint's 5131 Demo board. The discrepancy between these values and those of the customer's application may differ due to board and component parasitics. Figure 6. TQ5132 AMPS IF Output Match (IF = 85 MHz) TQ5132 1.0 0.5 2.0 Receiver State AMPS Mode CDMA High Gain C1 0 1 1 1 1 C2 0 0 0 1 1 C3 1 0 1 0 1 C AMIF output Impedance 0.9 @ - 2.9 z = 15.4 - j 7.23 y = 0.05 + j 0.02 Freq=85MHz 0.5 1.0 2.0 C CDMA HG, low lin CDMA Mid Gain -0.5 -1.0 -2.0 CDMA Low Gain Figure 7. TQ5132 AMPS IF Output Impedance at Pin 5 Vdd Decoupling External spurious signals at high and low frequencies can appear on the Vdd lines. Proper decoupling of these lines is required to eliminate unwanted noise. The recommended C1 = Mixer Mode, C2 = RFA gain select and LNA gain select, C3 = IFA gain select and LNA mode select. For additional information and latest specifications, see our website: www.triquint.com 9 TQ5132 Data Sheet Receiver State RFA IFA AMPS Mode CDMA High Gain CDMA HG, low lin CDMA Mid Gain CDMA Low Gain HG, AMPS Idd HG, CDMA Idd HG, CDMA Idd Bypass Bypass HG, AMPS Output LG, CDMA Output HG, CDMA Output LG, CDMA Output HG, CDMA Output Table 2. Electrical States of RFA and IFA In the AMPS mode the TQ5132 switches the IF output to the AMPS pin and turns on the RF amplifier but at lower current than CDMA mode. Thus the system draws much less current in AMPS mode. In the High Gain modes, a cascode amplifier is switched in before the mixer. Control for this function is made via a DC signal on the RF input pin 1. The IF amplifier gain can be stepped as well via a control line at pin 6. The CDMA Mid Gain Mode provides an intermediate gain step. The mixer has the RF amplifier turned off and the IF stage at minimum gain. In the low gain modes, the RF amplifier is disabled and the input signal is routed directly to the mixer. 10 For additional information and latest specifications, see our website: www.triquint.com TQ5132 Data Sheet Package Pinout Control 2 RF IN VDD Control 1 GND LO IN Mode Select/ LO Input Control 3 GIC IFA Gain Select AMP's IF Out CDMA IF IF Out Out IF Out Pin Descriptions Pin Name RF IN GND GIC IF OUT IF OUT IFA Gain LO IN Vdd Pin # 1 2 3 4 5 6 7 8 Description and Usage RF Input, RF amplifier gain select, Logic Control 2 Ground, paddle Off chip tuning for gain/IP3/current CDMA IF Output AMPS IF Output IF amplifier gain select, Logic Control 3 LO Input, mode select (CDMA/AMPS), Logic Control 1 LNA Vdd, typical 2.8V For additional information and latest specifications, see our website: www.triquint.com 9 TQ5132 Data Sheet Package Type: SOT23-8 Plastic Package Note 1 PIN 1 FUSED LEAD b A c E E1 Note 2 DIE e DESIGNATION A A1 b c D e E E1 L Theta A1 L METRIC 1.20 +/-.25 mm .100 +/-.05 mm .365 mm TYP .127 mm TYP 2.90 +/-.10 mm .65 mm TYP 2.80 +/-.20 mm 1.60 +/-.10 mm .45 +/-.10 mm 1.5 +/-1.5 DEG θ ENGLISH 0.05 +/-.250 in .004 +/-.002 in .014 in .005 in .114 +/-.004 in .026 in .110 +/-.008 in .063 +/-.004 in .018 +/-.004 in 1.5 +/-1.5 DEG NOTE 3 3 3 3 1,3 3 3 2,3 3 DESCRIPTION OVERALL HEIGHT STANDOFF LEAD WIDTH LEAD THICKNESS PACKAGE LENGTH LEAD PITCH LEAD TIP SPAN PACKAGE WIDTH FOOT LENGTH FOOT ANGLE Notes 1. The package length dimension includes allowance for mold mismatch and flashing. 2. The package width dimension includes allowance for mold mismatch and flashing. 3. Primary dimensions are in metric millimeters. The English equivalents are calculated and subject to rounding error. Additional Information For latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: info_wireless@tqs.com Tel: (503) 615-9000 Fax: (503) 615-8900 For technical questions and additional information on specific applications: Email: info_wireless@tqs.com The information provided herein is believed to be reliable; TriQuint assumes no liability for inaccuracies or omissions. TriQuint assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. TriQuint does not authorize or warrant any TriQuint product for use in life-support devices and/or systems. Copyright © 2000 TriQuint Semiconductor, Inc. All rights reserved. Revision A, April, 2000 12 For additional information and latest specifications, see our website: www.triquint.com