TQM713024

TQM713024 Data Sheet 3V GaAs HBT CDMA / WCDMA Cellular Power Amplifier Module Functional Block Diagram Vcc1 Vcc2 Features • • • RF Out InGaP HBT Technology High Efficiency: 38% @ 28dBm Capable of running as 0-bit PA in low bias mode to 28dBm Supports new chipsets with Vref@2.6V Optimized for 50 ohm System Small 8-pin, 3x3mm module Excellent Rx band noise performance Lead-free 260°C RoHS Compliant Full ESD Protection RF In Input Match Output Match • Vmode 1s 1st Stage PA 2nd Stage GND • • • • • Vref 1 bit Bias Control GND Product Description The TQM713024 is a 3V, 2 stage GaAs HBT Power Amplifier Module designed for use in mobile phones. Its compact 3x3mm package makes it ideal for today’s extremely small data enabled phones. Its RF performance meets the requirements for IS-95/98/CDMA2000 & WCDMA Rel99 standards. The TQM713024 is designed on TriQuint’s advanced InGaP HBT GaAs technology offering state of the art reliability, temperature stability and ruggedness. Selectable bias mode and a shutdown mode with low leakage current, improve talk and standby time. The output match, realized within the module package, optimizes efficiency/linearity at maximum rated output power. The TQM713024 has robust performance into mismatch and excellent linearity margin under all operating conditions including the ability to operate in LP Mode all the way to full output power. Applications • • IS-95/CDMA2000 Single/Dual/Tri Mode CDMA/AMPS phones Package Style 1 8 7 6 5 Electrical Specifications Parameter Frequency CDMA mode maximum Pout1 CDMA ACPR1 (@ 885kHz Offset) CDMA ACPR2 (@ 1.98MHz Offset) PAE @ 28dBm ILK Rx Band Noise 34 Min 824 28 -50 -60 38 5 -137 -46 -56 Typ Max 849 Units MHz dBm dBc dBc % µA dBm/Hz Note 1: Test Conditions CDMA Mode: VCC1=3.4VDC, VCC2=3.4VDC, VREF =2.85VDC, Tc=25°C 2 3 4 8-Pin 3.0x3.0mm Plastic Module Package Top View (X-ray) For additional information and latest specifications, see our website: www.triquint.com Revision F, August 10, 2006 Data Sheet 1 TQM713024 Data Sheet 3V GaAs HBT CDMA / WCDMA Cellular Power Amplifier Module Electrical Specifications Absolute Maximum Ratings1 Parameter RF Input Power Supply Voltage Reference Voltage Vmode (1 bit Bias Control) Case Operating Temperature Storage Temperature Symbol PIN VCC VREF Vmode TCASE TSTORE Min. 0 0 0 -40 -55 Typ/Nom 0 for HPM 2 for LPM 3.4 2.85 25 25 Max. 10.0 5.0 3.5 3.5 +100 +150 Units dBm Volts Volts Volts °C °C Note 1: No damage assuming only one parameter is set at a time with all other parameters set at or below nominal value. Recommended Operating Conditions Parameter Supply Voltage Reference Voltage PA On PA Off Vmode (1 bit Bias Control) High Bias Mode Low Bias Mode Case Operating Temperature TCASE Vmode 0 2.5 -30 2.85 25 0.5 3.0 +85 °C Symbol VCC VREF 2.75 0 2.85 2.95 0.5 Volts Min. 3.2 Typ/Nom 3.4 Max. 4.2 Units Volts Volts Note 1: No damage assuming only one parameter is set at a time with all other parameters set at or below nominal value. Power Range Truth Table Parameter High Power Low Power Shut Down VRef 2.85 V 2.85 V 0V Vmode Low High Low Range 16 dBm - 28 dBm < 16 dBm - For additional information and latest specifications, see our website: www.triquint.com Revision F, August 10, 2006 Data Sheet 2 TQM713024 Data Sheet 3V GaAs HBT CDMA / WCDMA Cellular Power Amplifier Module CDMA (IS-98C) Electrical Characteristics1,3 Parameter RF Frequency Large Signal • • • • • • • • IREF ITOTAL Input VSWR PAE • • Harmonics • • 2fo 3fo 10:1 VSWR (all phases) no oscillations. All harmonic spurious 10:1 VSWR, 10dBm Pin all phases Pout ≤ +28dBm -50 -65 -40 -40 -65 No degradation in performance and no permanent damage to device dBc dBc Pout = 28dBm Pout = 16dBm Pout=+28dBm, IS-95 Standard Vcc=3.4V; Vref=2.85V; Temp=25oC 34 7 38 9 -137 -134 dBm/Hz % Gain4 Vcc=3.4V; Vref =2.85V; -300C