TQP777002

TQP777002 Data Sheet 2.4GHz ISM Band InGaP HBT Matched Power Amplifier Functional Block Diagram Vc1 16 N/C 1 Bias controller N/C 15 Vc2 14 Vc3 13 12 N/C Features • • 11 RF Out High Linearity, 2.4 GHz ISM Band PA for 802.11b/g WLAN Systems Integrated Output Power Detector Leadless 3.0 x 3.0 mm SMT Pb-Free Package Temperature Compensated Bias Network with Bias Shutdown Mode EVM < 3.0% @ +18.5 dBm Linear Output Power 802.11g modulation +22 dBm Linear Output Power 802.11b modulation Integrated input and output match Integrated bias chokes Single 3.3V supply RF In 2 • • • • • • • N/C 3 10 N/C Vref 4 5 N/C 6 N/C 7 N/C 8 Vdet_out 9 N/C Product Description The TQP777002 is a high performance, high linearity, medium-power amplifier designed for 802.11b/g WLAN and other applications in the 2.4GHz ISM band. The device exhibits industry-leading power added efficiency under 802.11b and 802.11g modulated signals. The RF input match and output matches are integrated on chip as are the second and third stage bias chokes. The power amplifier is manufactured using TriQuint’s InGaP HBT process and is packaged in an industry standard 3mm x 3mm VQFN-16 Pb-Free package. Electrical Specifications Parameter Frequency Range Power Gain Error Vector Magnitude (Pout = +18.5dBm, 54Mbps OFDM Signal) Linear Output Power (guaranteed ACP under 802.11b modulation) 802.11b ACP; +22.0 dBm Output; 1st Side Lobe, 11 Mbps 802.11b ACP; +22.0 dBm Output; 2nd Side Lobe, 11Mbps Test Conditions: Ta=25°C; Vc1=Vc2=Vc3=3.3V Vref=2.90V Min 2400 28.5 typ 30.0